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1. 发明授权

US4841328A Electrostatic recording apparatus 失效
标题翻译：静电记录装置
公开(公告)号：US4841328A
公开(公告)日：1989-06-20
申请号：US893099
申请日：1986-08-04
申请人： Masaru Takeuchi , Takeo Fukatsu , Shoichi Nakano , Yukinori Kuwano , Koji Minami , Masayuki Iwamoto
发明人： Masaru Takeuchi , Takeo Fukatsu , Shoichi Nakano , Yukinori Kuwano , Koji Minami , Masayuki Iwamoto
IPC分类号： G03G5/082 , G03G13/04 , G03G21/08
CPC分类号： G03G5/08221 , G03G13/04 , G03G21/08
摘要： An electrostatic recording apparatus comprises a photosensitive drum. The photosensitive drum comprises a bulk layer of amorphous silicon formed on a support, and in the bulk layer, a first layer region is formed at the support side and a second layer region is formed at the surface side. The first layer region is formed in a manner of comprising hydrogen of 0.01-40 atomic %, oxygen of 0.1-40 atomic % and boron of 5.times.10.sup.-6 -1.0 atomic %. On the other hand, oxygen and boron are not doped virtually in the second layer region and generation of carrier traps is suppressed in this non-doped second layer region. Furthermore, the peak wavelengths of the lights irradiated onto the photosensitive drum from both a light source for exposure and light source for discharge are set shorter than 650 nm, and preferably shorter than 600 nm. Light of short wavelengths shorter than 650 nm is almost absorbed in the second layer region, and generation of carriers in the first layer region is small, and thereby capture of carriers in traps is suppressed.
摘要翻译：静电记录装置包括感光鼓。感光鼓包括在支撑体上形成的非晶硅本体层，并且在本体层中，在支撑侧形成第一层区域，在表面侧形成第二层区域。第一层区域以包含0.01-40原子％的氢，0.1-40原子％的氧和5×10-6-1.0原子％的硼的方式形成。另一方面，实际上在第二层区域中氧和硼不被掺杂，并且在该非掺杂的第二层区域中抑制了载流子阱的产生。此外，从曝光用光源和放电用光源照射到感光鼓上的光的峰值波长设定为短于650nm，优选短于600nm。短于650nm的短波长的光在第二层区域中几乎被吸收，并且第一层区域中的载流子的生成小，从而抑制陷阱中的载流子的捕获。

2. 发明授权

US4670367A Electrophotographic photosensitive member and method for making such a member 失效
标题翻译：电子照相感光构件及其制造方法
公开(公告)号：US4670367A
公开(公告)日：1987-06-02
申请号：US820985
申请日：1986-01-21
申请人： Koji Minami , Kazuyuki Goto , Hisao Haku , Takeo Fukatsu , Michitoshi Ohnishi , Yukinori Kuwano
发明人： Koji Minami , Kazuyuki Goto , Hisao Haku , Takeo Fukatsu , Michitoshi Ohnishi , Yukinori Kuwano
IPC分类号： G03G5/08 , G03G5/04 , G03G5/082
CPC分类号： G03G5/0825
摘要： An electrophotographic photosensitive member has a conductive substrate, a first layer structure with a single layer made mainly of amorphous silicon formed on the substrate, and a second layer structure including multiple layers also mainly made of amorphous silicon layered in succession on the first layer structure. The plurality of second layers includes at least two high resistance layers having a relatively high resistance value and at least one low resistance layer having a relatively low resistance value compared to the high resistance value. The layers of the second layer structure are layered alternately on the first layer structure so that the first and last layers in the second layer structure are high resistance layers.
摘要翻译：电子照相感光构件具有导电性基板，在基板上形成有主要由非晶硅构成的单层的第一层结构，以及主要由第一层结构上依次层叠的非晶硅构成的多层的第二层结构。多个第二层包括与高电阻值相比具有相对较高电阻值的至少两个高电阻层和具有相对较低电阻值的至少一个低电阻层。第二层结构的层交替层叠在第一层结构上，使得第二层结构中的第一层和最后层是高电阻层。

3. 发明授权

US4568622A Electrophotographic photosensitive member and method for making such a member containing amorphous silicon 失效
标题翻译：电子照相感光构件和制造这种含有非晶硅的构件的方法
公开(公告)号：US4568622A
公开(公告)日：1986-02-04
申请号：US621087
申请日：1984-06-15
申请人： Koji Minami , Kazuyuki Goto , Hisao Haku , Takeo Fukatsu , Michitoshi Ohnishi , Yukinori Kuwano
发明人： Koji Minami , Kazuyuki Goto , Hisao Haku , Takeo Fukatsu , Michitoshi Ohnishi , Yukinori Kuwano
IPC分类号： G03G5/08 , G03G5/04 , G03G5/082
CPC分类号： G03G5/0825
摘要： An electrophotographic photosensitive member has a conductive substrate, a first layer structure with a single layer made mainly of amorphous silicon formed on the substrate, and a second layer structure including multiple layers also mainly made of amorphous silicon layered in succession on the first layer structure. The plurality of second layers includes at least two high resistance layers having a relatively high resistance value and at least one low resistance layer having a relatively low resistance value compared to the high resistance value. The layers of the second layer structure are layered alternately on the first layer structure so that the first and last layers in the second layer structure are high resistance layers.
摘要翻译：电子照相感光构件具有导电性基板，在基板上形成有主要由非晶硅构成的单层的第一层结构，以及主要由第一层结构上依次层叠的非晶硅构成的多层的第二层结构。多个第二层包括与高电阻值相比具有相对较高电阻值的至少两个高电阻层和具有相对较低电阻值的至少一个低电阻层。第二层结构的层交替层叠在第一层结构上，使得第二层结构中的第一层和最后层是高电阻层。

4. 发明授权

US5258207A Amorphous silicon film, its production and photo semiconductor device utilizing such a film 失效
标题翻译：非晶硅膜，其生产和利用这种膜的光电半导体器件
公开(公告)号：US5258207A
公开(公告)日：1993-11-02
申请号：US917315
申请日：1992-07-23
申请人： Masayuki Iwamoto , Koji Minami , Toshihiko Yamaoki
发明人： Masayuki Iwamoto , Koji Minami , Toshihiko Yamaoki
IPC分类号： H01L21/205 , H01L31/0376 , H01L31/062 , H01L31/075 , H01L31/20 , B05D3/06
CPC分类号： H01L31/202 , H01L21/02422 , H01L21/02425 , H01L21/02447 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02592 , H01L21/0262 , H01L31/03762 , H01L31/062 , H01L31/075 , Y02E10/548 , Y02P70/521
摘要： An amorphous silicon film contains not less than 30 at. % hydrogen and includes silicon atoms joined with one hydrogen atom and silicon atoms joined with two hydrogen atoms, the ratio of the silicon atoms joined with two hydrogen atoms to the silicon atoms joined with one hydrogen atom being not more than 0.4. This amorphous silicon films is produced by performing plasma-assisted chemical vapor deposition at a substrate temperature of not more than 100.degree. C., while supplying hydrogen and silane in the predetermined ratio, the ratio of the flow of hydrogen to that of silane being not less than 1.
摘要翻译：非晶硅膜含有不小于30英寸％的氢，并且包括与一个氢原子连接的硅原子和与两个氢原子连接的硅原子，与两个氢原子连接的硅原子与与一个氢原子连接的硅原子的比例不大于0.4。该非晶硅膜通过在不超过100℃的衬底温度下进行等离子体辅助化学气相沉积而制备，同时以预定比例供应氢和硅烷，氢的流量与硅烷的流量之比不是小于1。

5. 发明授权

US5152833A Amorphous silicon film, its production and photo semiconductor device utilizing such a film 失效
标题翻译：非晶硅薄膜，其制造和使用这种薄膜的图像半导体器件
公开(公告)号：US5152833A
公开(公告)日：1992-10-06
申请号：US574019
申请日：1990-08-29
申请人： Masayuki Iwamoto , Koji Minami , Toshihiko Yamaoki
发明人： Masayuki Iwamoto , Koji Minami , Toshihiko Yamaoki
IPC分类号： H01L21/205 , H01L31/0376 , H01L31/062 , H01L31/075 , H01L31/20
CPC分类号： H01L31/0747 , H01L21/02422 , H01L21/02425 , H01L21/02447 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L31/03762 , H01L31/062 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： An amorphous silicon film contains not less than 30 at. % hydrogen and includes silicon atoms joined with one hydrogen atom and silicon atoms joined with two hydrogen atoms, the ratio of the silicon atoms joined with two hydrogen atoms to the silicon atoms joined with one hydrogen atom being not more than 0.4. This amorphous silicon films is produced by performing plasma-assisted chemical vapor deposition at a substrate temperature of not more than 100.degree. C., while supplying hydrogen and silane in the predetermined ratio, the ratio of the flow of hydrogen to that of silane being not less than 1.
摘要翻译：非晶硅膜含有不小于30英寸％的氢，并且包括与一个氢原子连接的硅原子和与两个氢原子连接的硅原子，与两个氢原子连接的硅原子与与一个氢原子连接的硅原子的比例不大于0.4。该非晶硅膜通过在不超过100℃的衬底温度下进行等离子体辅助化学气相沉积而制备，同时以预定比例供应氢和硅烷，氢的流量与硅烷的流量之比不是小于1。

6. 发明授权

US5093703A Thin film transistor with 10-15% hydrogen content 失效
标题翻译：薄膜晶体管含氢量为10-15％
公开(公告)号：US5093703A
公开(公告)日：1992-03-03
申请号：US328825
申请日：1989-03-27
申请人： Koji Minami , Kaneo Watanabe , Masayuki Iwamoto
发明人： Koji Minami , Kaneo Watanabe , Masayuki Iwamoto
IPC分类号： H01L21/205 , H01L21/263 , H01L21/336 , H01L29/78 , H01L29/786
CPC分类号： H01L29/66757 , H01L21/02422 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L29/78666
摘要： A thin film transistor includes a glass substrate on a surface of which a hydrogenated amorphous silicon (a-Si:H) film is formed. On the a-Si:H film, a source electrode and a drain electrode are respectively formed with a suitable interval between them. A gate electrode is formed positioned between the source electrode and the drain electrode. Insulation film is interposed between the gate electrode and the a-Si:H film. In a direct photo-CVD method using a low pressure mercury lamp, bandtail characteristics energy of the a-Si:H film is made less than 40 meV by controlling a decomposition region of a reaction gas, that is, the distance between the glass substrate and a gas supply port, whereby a thin film transistor having a good response is obtainable.
摘要翻译：薄膜晶体管包括在其表面上形成氢化非晶硅（a-Si：H）膜的玻璃基板。在a-Si：H膜上，源电极和漏电极分别以它们之间的适当间隔形成。形成位于源电极和漏电极之间的栅电极。绝缘膜介于栅电极和a-Si：H膜之间。在使用低压汞灯的直接光CVD法中，通过控制反应气体的分解区域，即玻璃基板之间的距离，使a-Si：H膜的带尾特性能量小于40meV 和气体供给口，由此可以获得具有良好响应的薄膜晶体管。

7. 发明授权

US4799968A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US4799968A
公开(公告)日：1989-01-24
申请号：US99347
申请日：1987-09-21
申请人： Kaneo Watanabe , Masayuki Iwamoto , Koji Minami
发明人： Kaneo Watanabe , Masayuki Iwamoto , Koji Minami
IPC分类号： H01L21/205 , H01L31/0376 , H01L31/075 , H01L31/20 , H01L31/06
CPC分类号： H01L31/03767 , H01L21/02422 , H01L21/02447 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device comprises a semiconductor layer of hydrogenated amorphous silicon for photoelectric conversion, in which the proportion of silicon atoms bonded to two hydrogen atoms to all the silicon atoms is not more than 1%.
摘要翻译：光电器件包括用于光电转换的氢化非晶硅半导体层，其中与两个氢原子键合到所有硅原子上的硅原子的比例不大于1％。

8. 发明授权

US5278015A Amorphous silicon film, its production and photo semiconductor device utilizing such a film 失效
标题翻译：非晶硅膜，其生产和利用这种膜的光电半导体器件
公开(公告)号：US5278015A
公开(公告)日：1994-01-11
申请号：US917317
申请日：1992-07-23
申请人： Masayuki Iwamoto , Koji Minami , Toshihiko Yamaoki
发明人： Masayuki Iwamoto , Koji Minami , Toshihiko Yamaoki
IPC分类号： H01L21/205 , H01L31/0376 , H01L31/04 , H01L31/062 , H01L31/075 , H01L31/20 , H01L45/00 , B05D5/12
CPC分类号： H01L21/02422 , H01L21/02425 , H01L21/02447 , H01L21/0245 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L31/03762 , H01L31/062 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： An amorphous silicon film contains not less than 30 at. % hydrogen and includes silicon atoms joined with one hydrogen atom and silicon atoms joined with two hydrogen atoms, the ratio of the silicon atoms joined with two hydrogen atoms to the silicon atoms joined with one hydrogen atom being not more than 0.4. This amorphous silicon films is produced by performing plasma-assisted chemical vapor deposition at a substrate temperature of not more than 100.degree. C., while supplying hydrogen and silane in the predetermined ratio, the ratio of the flow of hydrogen to that of silane being not less than 1.
摘要翻译：非晶硅膜含有不小于30英寸％的氢，并且包括与一个氢原子连接的硅原子和与两个氢原子连接的硅原子，与两个氢原子连接的硅原子与与一个氢原子连接的硅原子的比例不大于0.4。该非晶硅膜通过在不超过100摄氏度的衬底温度下进行等离子体辅助化学气相沉积而制备，同时以预定比例供应氢气和硅烷，氢气与硅烷的流量之比不是小于1。

9. 发明授权

US5085711A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US5085711A
公开(公告)日：1992-02-04
申请号：US480453
申请日：1990-02-15
申请人： Masayuki Iwamoto , Koji Minami , Kaneo Watanabe
发明人： Masayuki Iwamoto , Koji Minami , Kaneo Watanabe
IPC分类号： H01L31/0224 , H01L31/0368 , H01L31/075 , H01L31/20
CPC分类号： H01L31/204 , H01L31/022466 , H01L31/03687 , H01L31/075 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device capable of obtaining a high open circuit voltage, in which crystallization of a semiconductor is accelerated from the first stage of formation thereof such that a thin layer of the semiconductor is crystallized, by doping an electrode disposed between the semiconductor and a substrate with an element which reacts with an element in the semiconductor to accelerate crystallization of the semiconductor or by disposing a film made from a compound doped with said element between the semiconductor and the substrate.
摘要翻译：一种能够获得高开路电压的光电器件，其中半导体的结晶从其形成的第一阶段被加速，使得半导体的薄层结晶，通过将设置在半导体和衬底之间的电极掺杂，与半导体中的元素反应以加速半导体的结晶或通过在半导体和衬底之间设置由掺杂有所述元素的化合物制成的膜的元件。

10. 发明授权

US4922218A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US4922218A
公开(公告)日：1990-05-01
申请号：US241004
申请日：1988-09-02
申请人： Kaneo Watanabe , Masayuki Iwamoto , Koji Minami
发明人： Kaneo Watanabe , Masayuki Iwamoto , Koji Minami
IPC分类号： H01L31/04 , H01L31/0236 , H01L31/052 , H01L31/075 , H01L31/20
CPC分类号： H01L31/202 , H01L31/0236 , H01L31/056 , H01L31/075 , H01L31/204 , Y02E10/52 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device comprises a photoactive layer for generating carriers when light is applied thereto, and a window layer containing at least silicon and hydrogen and provided on the light incidence side of the photoactive layer. Hydrogen concentration in the window layer is higher in the layer's light incidence side than in the side facing the photoactive layer. Thus, the light incidence side of the window layer has a rough surface.
摘要翻译：光电器件包括用于在施加光时产生载流子的光敏层，以及至少含有硅和氢的窗口层，并且设置在光敏层的光入射侧。窗层中的氢浓度在层的光入射侧高于在面向光敏层的一侧。因此，窗口层的光入射侧具有粗糙的表面。

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