专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5476799A Process for preparing semiconductor device using a tunnel oxidized layer 失效
标题翻译：使用隧道氧化层制备半导体器件的方法
公开(公告)号：US5476799A
公开(公告)日：1995-12-19
申请号：US67788
申请日：1993-05-27
申请人： Masaru Sakamoto , Masakazu Morishita , Shigeru Nishimura
发明人： Masaru Sakamoto , Masakazu Morishita , Shigeru Nishimura
IPC分类号： H01L21/20 , H01L21/225 , H01L21/285 , H01L21/3215 , H01L21/22
CPC分类号： H01L21/32155 , H01L21/2022 , H01L21/2257 , H01L21/28525 , Y10S148/123 , Y10S438/923
摘要： A process for preparing a semiconductor device forms an insulating thin film capable of tunnelling phenomenon of carriers on a semiconductor substrate and forms a polycrystalline semiconductor layer on the thin film. An impurity is injected to the surface of the polycrystalline semiconductor layer, the diffusion coefficient to the thin film being smaller than that to the polycrystalline semiconductor layer. The process effects a first heat treatment at a temperature of 800.degree. C. or less to diffuse the impurity injected into the polycrystalline semiconductor layer in the polycrystalline semiconductor layer, thereby forming a uniform or substantially uniform impurity containing region at least at the thin film side of the polycrystalline semiconductor layer, and, effects a second heat treatment the temperature of which is 950.degree. C. or less and higher than the temperature of the first heat treatment to diffuse the impurity present in the polycrystalline semiconductor layer into the semiconductor substrate through the thin film, thereby forming a diffused layer.
摘要翻译：制备半导体器件的方法形成能够在半导体衬底上具有载流子隧道现象的绝缘薄膜，并在薄膜上形成多晶半导体层。向多晶半导体层的表面注入杂质，对薄膜的扩散系数小于多晶半导体层的扩散系数。该处理在800℃以下的温度下进行第一次热处理，以使在多晶半导体层中注入多晶半导体层的杂质扩散，至少在薄膜侧形成均匀或基本上均匀的含杂质区域的多晶半导体层，并且进行第二热处理，其温度为950℃以下且高于第一热处理的温度，以将存在于多晶半导体层中的杂质扩散到半导体衬底中，通过薄膜，从而形成扩散层。

2. 发明授权

US5739590A Semiconductor device having improved surface evenness 失效
标题翻译：具有改善的表面均匀性的半导体器件
公开(公告)号：US5739590A
公开(公告)日：1998-04-14
申请号：US457149
申请日：1995-06-01
申请人： Masaru Sakamoto , Masakazu Morishita , Shigeru Nishimura
发明人： Masaru Sakamoto , Masakazu Morishita , Shigeru Nishimura
IPC分类号： H01L21/20 , H01L21/225 , H01L21/285 , H01L21/3215 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/32155 , H01L21/2022 , H01L21/2257 , H01L21/28525 , Y10S148/123 , Y10S438/923
摘要： A semiconductor device is constructed to have an insulating layer containing an impurity provided upon a semiconductor substrate. This insulating layer contains a plurality of windows of different sizes. A first layer is provided in the windows. This first layer does not extend over a periphery of the windows to the surface of the insulating layer. Further, this semiconductor device is constructed such that the surface of the insulating layer and the first layer opposite the semiconductor substrate are flat. In addition, the semiconductor substrate in contact with the first layer also contains the impurity. The semiconductor device, having less surface unevenness that a conventional device, provides both improved and greater stability of device properties.
摘要翻译：半导体器件被构造成具有包含设置在半导体衬底上的杂质的绝缘层。该绝缘层包含多个不同尺寸的窗口。在窗口中提供第一层。该第一层不延伸到窗户的周边至绝缘层的表面。此外，该半导体器件被构造成使得绝缘层的表面和与半导体衬底相对的第一层的表面是平坦的。此外，与第一层接触的半导体衬底还含有杂质。具有较少表面不均匀性的半导体器件，传统器件提供了改进的和更高的器件性能的稳定性。

3. 发明授权

US5597741A Process for forming a recrystallized layer and diffusing impurities 失效
标题翻译：形成再结晶层并扩散杂质的方法
公开(公告)号：US5597741A
公开(公告)日：1997-01-28
申请号：US390548
申请日：1995-02-17
申请人： Masaru Sakamoto , Masakazu Morishita , Shigeru Nishimura
发明人： Masaru Sakamoto , Masakazu Morishita , Shigeru Nishimura
IPC分类号： H01L21/20 , H01L21/225 , H01L21/285 , H01L21/3215 , H01L21/266
CPC分类号： H01L21/32155 , H01L21/2022 , H01L21/2257 , H01L21/28525 , Y10S148/123 , Y10S438/923
摘要： A process for preparing a semiconductor device, in which a polycrystalline silicon film is formed on a monocrystalline semiconductor substrate and arsenic or phosphorus is injected as an impurity into the polycrystalline silicon film by an ion-injection method to make the polycrystalline silicon film an amorphous layer. The amorphous layer is heat-treated at a temperature of 600.degree. C. to 650.degree. C. to recrystallize the amorphous layer, thus forming a recrystallized layer having a grain size greater than that of the polycrystalline silicon film by solid phase growth. The recrystallized layer is heat-treated at a temperature of 800.degree. C. to 900.degree. C. to diffuse the impurity into the monocrystalline semiconductor substrate.
摘要翻译：一种制备半导体器件的方法，其中在单晶半导体衬底上形成多晶硅膜，并且通过离子注入法将砷或磷作为杂质注入多晶硅膜中，以使多晶硅膜成为非晶层。在600〜650℃的温度下对非晶层进行热处理，使非晶质层重结晶，通过固相生长形成晶粒尺寸大于多晶硅膜的再结晶层。在800〜900℃的温度下对再结晶层进行热处理，将杂质扩散到单晶半导体衬底中。

4. 发明授权

US5242858A Process for preparing semiconductor device by use of a flattening agent and diffusion 失效
标题翻译：通过使用平坦化剂和扩散制备半导体器件的方法
公开(公告)号：US5242858A
公开(公告)日：1993-09-07
申请号：US755452
申请日：1991-09-05
申请人： Masaru Sakamoto , Masakazu Morishita , Shigeru Nishimura
发明人： Masaru Sakamoto , Masakazu Morishita , Shigeru Nishimura
IPC分类号： H01L21/20 , H01L21/225 , H01L21/285 , H01L21/3215
CPC分类号： H01L21/32155 , H01L21/2022 , H01L21/2257 , H01L21/28525 , Y10S148/123 , Y10S438/923
摘要： A process for preparing a semiconductor device comprises exposing at least a part of the main surface of a semiconductor substrate, forming a layer comprising the same main component as the above substrate, forming a flattening agent layer on the surface of said layer, removing the above layer and the flattening agent layer at the same time and injecting an impurity after said removing step.
摘要翻译：一种制备半导体器件的方法，包括使半导体衬底的主表面的至少一部分暴露，形成与上述衬底相同的主要成分的层，在所述层的表面上形成平坦化剂层，除去上述层和平坦化剂层，并在所述除去步骤之后注入杂质。

5. 发明授权

US08488037B2 Photoelectric conversion apparatus and photoelectric conversion system having the apparatus 有权
标题翻译：具有该装置的光电转换装置和光电转换系统
公开(公告)号：US08488037B2
公开(公告)日：2013-07-16
申请号：US13452755
申请日：2012-04-20
申请人： Tadao Endo , Noriyuki Kaifu , Toshiaki Sato , Masakazu Morishita
发明人： Tadao Endo , Noriyuki Kaifu , Toshiaki Sato , Masakazu Morishita
IPC分类号： H04N3/14
CPC分类号： H04N5/363 , H01L27/14609 , H04N5/32 , H04N5/335 , H04N5/365 , H04N5/3742 , H04N5/378
摘要： In order to provide a photoelectric conversion apparatus, which is an apparatus excellent in reading speed, high S/N, high tone level, and low cost, the photoelectric conversion apparatus has a photoelectric conversion circuit section comprising a plurality of photoelectric conversion elements, switching elements, matrix signal wires, and gate drive wires arranged on a same substrate in order to output parallel signals, a driving circuit section for applying a driving signal to the gate drive wire, and a reading circuit section for converting the parallel signals transferred through the matrix signal wires to serial signals to output them, wherein the reading circuit section comprises at least one analog operational amplifier connected with each of the matrix signal wires, transfer switches for transferring output signals from the respective matrix signal wires, output through each amplifier, reading capacitors, and reading switches for successively reading the signals out of the reading capacitors in the form of serial signals.
摘要翻译：为了提供一种光电转换装置，其是读取速度高，S / N高，色调级高，成本低的装置，具有包含多个光电转换元件的光电转换电路部，切换为了输出并行信号而配置在同一基板上的元件，矩阵信号线和栅极驱动线，用于向栅极驱动线施加驱动信号的驱动电路部，以及用于将通过矩阵信号线连接到串行信号以输出它们，其中读取电路部分包括与每个矩阵信号线连接的至少一个模拟运算放大器，用于传送来自各个矩阵信号线的输出信号的转换开关，通过每个放大器输出的读数电容器和读取开关，用于连续读取readi中的信号串联信号形式的电容器。

6. 发明授权

US07724295B2 Photoelectric converter and radiation reader 有权
标题翻译：光电转换器和辐射读取器
公开(公告)号：US07724295B2
公开(公告)日：2010-05-25
申请号：US11064974
申请日：2005-02-25
申请人： Isao Kobayashi , Masakazu Morishita
发明人： Isao Kobayashi , Masakazu Morishita
IPC分类号： H04N5/217
CPC分类号： H01L27/14663 , G01T1/247 , H01L27/14609 , H01L27/14659 , H01L27/14676 , H01L27/14692 , H04N5/2173 , H04N5/32 , H04N5/3575 , H04N5/363 , H04N5/365 , H04N5/378
摘要： A radiation reader including a conversion device, and a method of driving the radiation reader. The conversion device includes (a) a pixel including a conversion device for converting an incident radiation into an electric charge, and (b) a reading circuit including at least one field effect transistor for reading the electric charge from the pixel in an amplifying manner as a signal containing a noise. The reading circuit includes first storage means for storing the signal containing the noise, second storage means for storing the noise, and processing means for deriving an output signal not containing the noise based on a first output from the first storage means and a second output from the second storage means.
摘要翻译：一种包括转换装置的辐射读取器以及驱动辐射读取器的方法。转换装置包括（a）包括用于将入射辐射转换为电荷的转换装置的像素，以及（b）包括至少一个场效应晶体管的读取电路，用于以放大方式从像素读出电荷，包含噪声的信号。读取电路包括用于存储包含噪声的信号的第一存储装置，用于存储噪声的第二存储装置，以及用于基于来自第一存储装置的第一输出而导出不包含噪声的输出信号的处理装置，第二存储装置。

7. 发明申请

US20100111250A1 MAMMOGRAPHY APPARATUS 有权
标题翻译：摄影装置
公开(公告)号：US20100111250A1
公开(公告)日：2010-05-06
申请号：US12576368
申请日：2009-10-09
申请人： Osamu Tsujii , Masakazu Morishita , Masahiko Okunuki , Satoshi Shimizu
发明人： Osamu Tsujii , Masakazu Morishita , Masahiko Okunuki , Satoshi Shimizu
IPC分类号： A61B6/04
CPC分类号： A61B5/0035 , A61B5/0075 , A61B5/0091 , A61B5/4312 , A61B5/708 , A61B6/0414 , A61B6/4035 , A61B6/4233 , A61B6/4291 , A61B6/4417 , A61B6/463 , A61B6/502 , A61B6/5247 , A61B6/542 , A61B2562/17
摘要： A mammography apparatus includes a detector that detects X-rays transmitted through a breast, and an optically transparent or semitransparent pressing panel for pressing the breast. The apparatus further includes a near infrared ray source that provided between the X-ray source and the pressing panel and arranged in a two-dimensional shape in alignment with the pressing panel, and that is movable between a first position in close contact with the pressing panel and a second position outside an X-ray image capture region. Near infrared image capture is carried out using the near infrared ray source by causing the near infrared ray source to be in the first position, and the near infrared ray source is caused to retract to the second position when carrying out X-ray image capture using the X-ray source.
摘要翻译：乳房摄影装置包括检测透过乳房的X射线检测器和用于按压乳房的光学透明或半透明按压面板。该装置还包括近红外线源，其设置在X射线源和按压面板之间，并且与按压面板对准地配置成二维形状，并且能够在与按压面紧密接触的第一位置之间移动面板和X射线图像捕获区域外的第二位置。通过使近红外线源处于第一位置，使用近红外线源进行近红外图像捕捉，并且在进行X射线图像捕获时使近红外线源退回至第二位置 X射线源。

8. 发明申请

US20090230443A1 RADIATION IMAGING APPARATUS AND RADIATION IMAGING SYSTEM 失效
标题翻译：辐射成像装置和辐射成像系统
公开(公告)号：US20090230443A1
公开(公告)日：2009-09-17
申请号：US12299046
申请日：2008-01-15
申请人： Chiori Mochizuki , Minoru Watanabe , Takamasa Ishii , Masakazu Morishita
发明人： Chiori Mochizuki , Minoru Watanabe , Takamasa Ishii , Masakazu Morishita
IPC分类号： H01L31/112
CPC分类号： G01T1/241 , H01L27/14632 , H01L27/14658 , H01L27/14659 , H01L27/14663
摘要： A radiation imaging apparatus comprises a pixel region, on an insulating substrate 100, including a plurality of pixels arranged in a matrix, each pixel having a conversion element 101 that converts radiation into electric charges and a switching element 102 connected to the conversion element 101. The conversion element 101 has an upper electrode layer 119, a lower electrode layer 115, a semiconductor layer 117 arranged between the upper electrode layer 119 and the lower electrode layer 115. The upper electrode layer 119 or the lower electrode layer 115 has an opening 200 at least within a region where the semiconductor layer 117 is arranged.
摘要翻译：辐射成像装置包括在绝缘基板100上的像素区域，该像素区域包括排列成矩阵的多个像素，每个像素具有将辐射转换成电荷的转换元件101和连接到转换元件101的开关元件102。转换元件101具有上电极层119，下电极层115，布置在上电极层119和下电极层115之间的半导体层117.上电极层119或下电极层115具有开口200 至少在布置有半导体层117的区域内。

9. 发明申请

US20090230311A1 IMAGE PICKUP APPARATUS AND RADIATIOIN IMAGE PICKUP APPARATUS 有权
标题翻译：图像拾取装置和放大图像拾取装置
公开(公告)号：US20090230311A1
公开(公告)日：2009-09-17
申请号：US12474404
申请日：2009-05-29
申请人： Chiori Mochizuki , Masakazu Morishita , Keiichi Nomura , Minoru Watanabe , Takamasa Ishii
发明人： Chiori Mochizuki , Masakazu Morishita , Keiichi Nomura , Minoru Watanabe , Takamasa Ishii
IPC分类号： G01T1/24 , H01L27/00
CPC分类号： H01L27/14609 , H01L27/14636 , H01L27/14676
摘要： To improve a sensor resetting method and thereby implement a high rate at which a moving image is read, the invention provides an image pickup apparatus and a radiation image pickup apparatus including: a plurality of pixels arranged on a substrate in row and column directions, each pixel having a conversion element and a transfer switching element; a drive wiring connected to a plurality of the transfer switching elements in the row direction; and a conversion element wiring connected to a plurality of the conversion elements in the row direction, wherein a reset switching element is disposed between the conversion element wiring and a reset wiring for supplying a reset voltage for resetting the conversion element, and a bias switching element is disposed between the conversion element wiring and a bias wiring for supplying a bias voltage for operating the conversion element.
摘要翻译：为了改善传感器复位方法，从而实现读取运动图像的高速率，本发明提供一种图像拾取装置和放射线图像拾取装置，包括：沿行和列方向排列在基板上的多个像素，每个像素，具有转换元件和转印开关元件; 在行方向上与多个所述转印开关元件连接的驱动配线; 以及在行方向上连接到多个转换元件的转换元件布线，其中复位开关元件设置在转换元件布线和用于提供用于复位转换元件的复位电压的复位布线之间，偏置开关元件设置在转换元件布线和用于提供用于操作转换元件的偏置电压的偏置布线之间。

10. 发明授权

US07557355B2 Image pickup apparatus and radiation image pickup apparatus 失效
标题翻译：图像拾取装置和放射线图像拾取装置
公开(公告)号：US07557355B2
公开(公告)日：2009-07-07
申请号：US11229630
申请日：2005-09-20
申请人： Chiori Mochizuki , Masakazu Morishita , Keiichi Nomura , Minoru Watanabe , Takamasa Ishii
发明人： Chiori Mochizuki , Masakazu Morishita , Keiichi Nomura , Minoru Watanabe , Takamasa Ishii
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14636 , H01L27/14676
摘要： To improve a sensor resetting method and thereby implement a high rate at which a moving image is read, the invention provides an image pickup apparatus and a radiation image pickup apparatus including: a plurality of pixels arranged on a substrate in row and column directions, each pixel having a conversion element and a transfer switching element; a drive wiring connected to a plurality of the transfer switching elements in the row direction; and a conversion element wiring connected to a plurality of the conversion elements in the row direction, wherein a reset switching element is disposed between the conversion element wiring and a reset wiring for supplying a reset voltage for resetting the conversion element, and a bias switching element is disposed between the conversion element wiring and a bias wiring for supplying a bias voltage for operating the conversion element.
摘要翻译：为了改善传感器复位方法，从而实现读取运动图像的高速率，本发明提供一种图像拾取装置和放射线图像拾取装置，包括：沿行和列方向排列在基板上的多个像素，每个像素，具有转换元件和转印开关元件; 在行方向上与多个所述转印开关元件连接的驱动配线; 以及在行方向上连接到多个转换元件的转换元件布线，其中复位开关元件设置在转换元件布线和用于提供用于复位转换元件的复位电压的复位布线之间，偏置开关元件设置在转换元件布线和用于提供用于操作转换元件的偏置电压的偏置布线之间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式