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1. 发明授权

US07601468B2 Process for manufacturing half-tone phase shifting mask blanks 有权
标题翻译：制造半色调相移掩模毛坯的工艺
公开(公告)号：US07601468B2
公开(公告)日：2009-10-13
申请号：US11585180
申请日：2006-10-24
申请人： Masaru Mitsui , Toshiyuki Suzuki , Shigenori Ishihara
发明人： Masaru Mitsui , Toshiyuki Suzuki , Shigenori Ishihara
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , C23C14/0641 , G03F1/68
摘要： For efficiently manufacturing half-tone phase shifting mask blanks having uniform product qualities, which enables the prevention of optical property variations when the blanks are mass-produced, there is provided a process for manufacturing half-tone phase shifting mask blanks each having a phase shifting film containing at least one half-tone film on a transparent substrate, comprising the step of providing a target containing a metal and silicon, and carrying out reactive sputtering in an atmosphere containing a reactive gas, to form said half-tone film on said transparent substrate, wherein the formation of the half-tone film by said reactive sputtering is carried out using, as said target, a target having a metal/silicon compositional ratio selected so as to give a predetermined optical property of the half-tone film, at a reactive gas flow rate selected from a region where a discharge characteristic is stabilized against a change in the flow rate of the reactive gas.
摘要翻译：为了有效地制造具有均匀产品质量的半色调相移掩模坯料，这使得能够防止坯料质量产生时的光学特性变化，提供了一种制造半色调相移掩模坯料的方法，每个具有相移在透明基板上含有至少一个半色调膜的薄膜，包括提供含有金属和硅的靶并在含有反应性气体的气氛中进行反应性溅射的步骤，以在所述透明基底上形成所述半色调膜基板，其中通过所述反应性溅射形成半色调膜是使用所选择的目标来选择具有选择的金属/硅组分比以便得到半色调膜的预定光学性质的靶，在反应气体流量选自放电特性相对于反应气体的流量变化而稳定的区域。

2. 发明授权

US07141339B2 Process for manufacturing half-tone phase shifting mask blanks 有权
公开(公告)号：US07141339B2
公开(公告)日：2006-11-28
申请号：US10689527
申请日：2003-10-21
申请人： Masaru Mitsui , Toshiyuki Suzuki , Shigenori Ishihara
发明人： Masaru Mitsui , Toshiyuki Suzuki , Shigenori Ishihara
IPC分类号： G03F1/00 , C23C14/00
CPC分类号： G03F1/32 , C23C14/0641 , G03F1/68
摘要： For efficiently manufacturing half-tone phase shifting mask blanks having uniform product qualities, which enables the prevention of optical property variations when the blanks are mass-produced, there is provided a process for manufacturing half-tone phase shifting mask blanks each having a phase shifting film containing at least one half-tone film on a transparent substrate, comprising the step of providing a target containing a metal and silicon, and carrying out reactive sputtering in an atmosphere containing a reactive gas, to form said half-tone film on said transparent substrate, wherein the formation of the half-tone film by said reactive sputtering is carried out using, as said target, a target having a metal/silicon compositional ratio selected so as to give a predetermined optical property of the half-tone film, at a reactive gas flow rate selected from a region where a discharge characteristic is stabilized against a change in the flow rate of the reactive gas.

3. 发明授权

US07026077B2 Photomask blank manufacturing method 有权
公开(公告)号：US07026077B2
公开(公告)日：2006-04-11
申请号：US10420005
申请日：2003-04-22
申请人： Masaru Mitsui , Toshiyuki Suzuki , Shigenori Ishihara
发明人： Masaru Mitsui , Toshiyuki Suzuki , Shigenori Ishihara
IPC分类号： G03F1/00
CPC分类号： C23C14/5806 , C23C14/185 , C23C14/541 , G03F1/32 , G03F1/68
摘要： A method of manufacturing a photomask blank having at least a film for forming a mask pattern on a transparent substrate comprises the steps of causing a sputtering atmosphere to contain at least a helium gas to form a film for forming the mask pattern by sputtering, and heating the transparent substrate during or after the film forming step.

4. 发明申请

US20070037073A1 Process for manufacturing half-tone phase shifting mask blanks 有权
标题翻译：制造半色调相移掩模毛坯的工艺
公开(公告)号：US20070037073A1
公开(公告)日：2007-02-15
申请号：US11585180
申请日：2006-10-24
申请人： Masaru Mitsui , Toshiyuki Suzuki , Shigenori Ishihara
发明人： Masaru Mitsui , Toshiyuki Suzuki , Shigenori Ishihara
IPC分类号： G21G4/00 , C23C14/32 , C23C14/00 , G03F1/00
CPC分类号： G03F1/32 , C23C14/0641 , G03F1/68
摘要： For efficiently manufacturing half-tone phase shifting mask blanks having uniform product qualities, which enables the prevention of optical property variations when the blanks are mass-produced, there is provided a process for manufacturing half-tone phase shifting mask blanks each having a phase shifting film containing at least one half-tone film on a transparent substrate, comprising the step of providing a target containing a metal and silicon, and carrying out reactive sputtering in an atmosphere containing a reactive gas, to form said half-tone film on said transparent substrate, wherein the formation of the half-tone film by said reactive sputtering is carried out using, as said target, a target having a metal/silicon compositional ratio selected so as to give a predetermined optical property of the half-tone film, at a reactive gas flow rate selected from a region where a discharge characteristic is stabilized against a change in the flow rate of the reactive gas.
摘要翻译：为了有效地制造具有均匀产品质量的半色调相移掩模坯料，这使得能够防止坯料质量产生时的光学特性变化，提供了一种制造半色调相移掩模坯料的方法，每个具有相移在透明基板上含有至少一个半色调膜的薄膜，包括提供含有金属和硅的靶并在含有反应性气体的气氛中进行反应性溅射的步骤，以在所述透明基底上形成所述半色调膜基板，其中通过所述反应性溅射形成半色调膜是使用所选择的目标来选择具有选择的金属/硅组分比以便得到半色调膜的预定光学性质的靶，在反应气体流量选自放电特性对反应气体的流量变化稳定的区域。

5. 发明授权

US07833387B2 Mask blank manufacturing method and sputtering target for manufacturing the same 有权
标题翻译：掩模坯制造方法及其制造用溅射靶
公开(公告)号：US07833387B2
公开(公告)日：2010-11-16
申请号：US11029652
申请日：2005-01-06
申请人： Masaru Mitsui , Toshiyuki Suzuki
发明人： Masaru Mitsui , Toshiyuki Suzuki
IPC分类号： C23C14/35
CPC分类号： C23C14/3407 , C23C14/0641 , C23C14/225 , G03F1/32 , G03F1/68
摘要： A sputtering target for manufacturing a mask blank having a backing plate 5 where a portion for bonding a target member 4 is protruded like the convex with respect to a base portion 5′, and the target member 4 being formed to have a larger surface area than the area of the bonding portion of the backing plate 5 with extending from the bonding portion over a whole periphery with a bonding agent 30 interposed in-between, and further a metal 40 is deposited to a concave portion formed by a combination of the two structures in such a manner that the elution of the bonding agent 30 can be sealed.
摘要翻译：用于制造具有背板5的掩模坯料的溅射靶，其中用于接合目标构件4的部分相对于基部5'突出为凸起，并且目标构件4形成为具有比背衬板5的接合部分的区域从接合部分在整个周边上以介于其间的粘合剂30延伸，并且另外的金属40沉积到由两个结构的组合形成的凹部以这样的方式可以密封粘合剂30的洗脱。

6. 发明申请

US20050170263A1 Mask blank manufacturing method and sputtering target for manufacturing the same 有权
标题翻译：掩模坯制造方法及其制造用溅射靶
公开(公告)号：US20050170263A1
公开(公告)日：2005-08-04
申请号：US11029652
申请日：2005-01-06
申请人： Masaru Mitsui , Toshiyuki Suzuki
发明人： Masaru Mitsui , Toshiyuki Suzuki
IPC分类号： B32B9/00 , B32B17/06 , C23C14/00 , C23C14/06 , C23C14/22 , C23C14/32 , C23C14/34 , G03F1/50 , G03F1/68 , G03F9/00 , H01L21/027
CPC分类号： C23C14/3407 , C23C14/0641 , C23C14/225 , G03F1/32 , G03F1/68
摘要： A sputtering target for manufacturing a mask blank having a backing plate 5 where a portion for bonding a target member 4 is protruded like the convex with respect to a base portion 5′, and the target member 4 being formed to have a larger surface area than the area of the bonding portion of the backing plate 5 with extending from the bonding portion over a whole periphery with a bonding agent 30 interposed in-between, and further a metal 40 is deposited to a concave portion formed by a combination of the two structures in such a manner that the elution of the bonding agent 30 can be sealed.
摘要翻译：用于制造具有背板5的掩模坯料的溅射靶，其中用于接合目标构件4的部分相对于基部5'突出为凸起，并且目标构件4形成为具有比背衬板5的接合部分的区域从接合部分在整个周边上以介于其间的粘合剂30延伸，并且另外的金属40沉积到由两个结构的组合形成的凹部以这样的方式可以密封粘合剂30的洗脱。

7. 发明授权

US07862960B2 Manufacturing method of transparent substrate for mask blanks, manufacturing method of mask blanks, manufacturing method of exposure masks, manufacturing method of semiconductor devices, manufacturing method of liquid crystal display devices, and defect correction method of exposure masks 有权
公开(公告)号：US07862960B2
公开(公告)日：2011-01-04
申请号：US11630131
申请日：2005-06-22
申请人： Masaru Tanabe , Masaru Mitsui
发明人： Masaru Tanabe , Masaru Mitsui
IPC分类号： G03F1/00
CPC分类号： G03F1/72 , G03F1/60
摘要： There are provided a manufacturing method of a transparent substrate for a mask blank, a mask blank, or an exposure mask adapted to prevent occurrence of a transfer pattern defect or a mask pattern defect, by correcting a recessed defect existing on the surface of the transparent substrate, and a defect correction method of an exposure mask.With respect to an exposure mask having a transparent substrate 1 formed thereon with a mask pattern 2 which becomes a transfer pattern, correction is performed by removing, by the use of a needle-shaped member 4, a peripheral portion of a recessed defect 3 formed on a surface 1a of the substrate, where the mask pattern 2 is not formed, so as to induce a reduction in transmission light quantity which causes a transfer pattern defect, thereby reducing a level difference between the surface of the substrate and the depth of the recessed defect. This correction of the recessed defect is carried out at the stage before forming a mask pattern forming thin film on the transparent substrate. A mask blank and an exposure mask are manufactured by the use of the transparent substrate applied with the correction of the recessed defect.

8. 外观设计

USD537048S1 Photomask blank 失效
标题翻译：光掩模空白
公开(公告)号：USD537048S1
公开(公告)日：2007-02-20
申请号：US29213840
申请日：2004-09-23
申请人： Masaru Mitsui
设计人： Masaru Mitsui

9. 发明授权

US06242138B1 Phase shift mask and phase shift mask blank 有权
标题翻译：相移掩模和相移掩模空白
公开(公告)号：US06242138B1
公开(公告)日：2001-06-05
申请号：US09634480
申请日：2000-08-08
申请人： Masaru Mitsui , Kimihiro Okada , Hideki Suda
发明人： Masaru Mitsui , Kimihiro Okada , Hideki Suda
IPC分类号： G03F900
CPC分类号： G03F1/32
摘要： A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.
摘要翻译：半色调型相移掩模以及用于掩模的相移掩模坯料由基本上由氮，金属和硅制成的薄膜光半透明部分形成。每个元素的含量和比例在薄膜中被规定在一定范围内以改善诸如耐酸性，光电阻，电导率，折射率（膜厚），透光率，蚀刻选择性等的膜特性。的光半透明部分。相移掩模以高精度满足光学特性（即透光率和相移量），并且减少薄膜中的缺陷。

10. 发明授权

US07635950B2 Short-arc type high pressure discharge lamp having gaps formed among electrode axes, metal foils and a glass material surface 有权
标题翻译：在电极轴，金属箔和玻璃材料表面之间形成间隙的短弧型高压放电灯
公开(公告)号：US07635950B2
公开(公告)日：2009-12-22
申请号：US11391175
申请日：2006-03-29
申请人： Kiyotaka Tanba , Takayuki Kagami , Masaru Mitsui , Nobuo Kanai , Yasuhito Sakai
发明人： Kiyotaka Tanba , Takayuki Kagami , Masaru Mitsui , Nobuo Kanai , Yasuhito Sakai
IPC分类号： H01J17/04 , H01J17/26
CPC分类号： H01J9/326 , H01J61/34 , H01J61/368 , H01J61/86
摘要： A short-arc type high pressure discharge lamp in which durability is improved and a lamp apparatus including the same is provided.Glass material portions 52A into which glass material enters respectively are provided on both sides of an electrode axis 5402 between the outer circumferential surface 5406 thereof and a curved portion 58 of a sealed metal foil 56, and a gap S3 being continuous with a sealed space 60 remains among the glass material portion 52A, the outer circumferential portion 5406 of the electrode axis 5402, and the curved portion 58. An angle formed by a surface 52-1 of the glass material portion 52A facing the gap S3 and the curved portion 58 is an obtuse angle φ. In other words, an angle formed by the surface 52-1 of the glass material portion 52A facing the gap S3 and a surface 5602 of the curved portion 58 of the sealed metal foil 56 is the obtuse angle φ.
摘要翻译：一种其中耐久性提高的短弧型高压放电灯和包括该短弧型高压放电灯的灯装置。玻璃材料分别在其外周面5406和密封金属箔56的弯曲部分58之间的电极轴线5402的两侧设置玻璃材料部分52A，间隙S3与密封空间60连续保留在玻璃材料部分52A，电极轴线5402的外周部分5406和弯曲部分58.由玻璃材料部分52A的面向间隙S3的表面52-1和弯曲部分58形成的角度是钝角phi 换句话说，由玻璃材料部分52A的面向间隙S3的表面52-1和密封金属箔56的弯曲部分58的表面5602形成的角度是钝角phi。

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