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1. 发明授权

US08440373B2 Mask blank substrate, mask blank, photomask, and methods of manufacturing the same 有权
标题翻译：掩模空白基板，掩模板，光掩模及其制造方法
公开(公告)号：US08440373B2
公开(公告)日：2013-05-14
申请号：US13241691
申请日：2011-09-23
申请人： Masaru Tanabe
发明人： Masaru Tanabe
IPC分类号： G03F1/22
CPC分类号： G03F1/60 , Y10T428/24802
摘要： A mask blank substrate for a photomask is chucked on a mask stage of an exposure apparatus. A main surface, on the side where a thin film for a transfer pattern is to be formed, of the mask blank substrate has a flatness of 0.3 μm or less in a 142 mm square area including its central portion and has a convex shape being relatively high at its central portion and relatively low at its peripheral portion. The difference upon fitting, to the main surface of the mask blank substrate, a virtual reference main surface, having a spherical shape in a 132 mm square area, of a virtual reference substrate is 40 nm or less.
摘要翻译：用于光掩模的掩模空白基板被夹在曝光装置的掩模台上。在掩模坯料基板的形成有转印图案的薄膜的一侧的主表面在包括其中心部分的142mm正方形区域中的平坦度为0.3μm或更小，并且具有相对的凸形状在其中心部分高，在其周边部分相对较低。对于虚拟参考基板，在掩模坯料基板的主表面上具有132mm正方形面积的球形的虚拟参考主表面的差异为40nm以下。

2. 发明授权

US08318388B2 Mask blank providing system, mask blank providing method, mask blank transparent substrate manufacturing method, mask blank manufacturing method, and mask manufacturing method 有权
标题翻译：掩模空白提供系统，掩模坯提供方法，掩模空白透明基板制造方法，掩模板制造方法和掩模制造方法
公开(公告)号：US08318388B2
公开(公告)日：2012-11-27
申请号：US13174397
申请日：2011-06-30
申请人： Osamu Suzuki , Hiroyuki Akagawa , Masaru Tanabe , Atsushi Kawaguchi , Naozumi Ishibashi
发明人： Osamu Suzuki , Hiroyuki Akagawa , Masaru Tanabe , Atsushi Kawaguchi , Naozumi Ishibashi
IPC分类号： G03F1/00
CPC分类号： G03F1/60 , G03F1/50 , Y10T428/31616
摘要： A mask blank manufacturing department manufactures a mask blank by forming a thin film to be a mask pattern on a mask blank transparent substrate. When providing the mask blank to a mask manufacturing department, the mask blank manufacturing department provides optical characteristic information (transmittance variation) of the mask blank transparent substrate and optical characteristic information (transmittance variation and/or phase difference variation) of the mask blank to the mask manufacturing department. The optical characteristic information of the mask blank transparent substrate is provided to the mask blank manufacturing department from a materials processing department that manufactures mask blank transparent substrates.
摘要翻译：掩模制造部门通过在掩模板透明基板上形成作为掩模图案的薄膜来制造掩模坯料。当掩模制造部门提供掩模坯料时，掩模制造部门提供掩模毛坯透明基板的光学特性信息（透射率变化）和掩模毛坯的光学特性信息（透射率变化和/或相位差变化）面具制造部门。掩模坯料透明基板的光学特性信息由制造掩模板透明基板的材料加工部门提供给掩模坯料制造部。

3. 发明授权

US08318387B2 Mask blank substrate set and mask blank set 有权
标题翻译：面罩空白衬底套和面罩空白套
公开(公告)号：US08318387B2
公开(公告)日：2012-11-27
申请号：US13167433
申请日：2011-06-23
申请人： Masaru Tanabe
发明人： Masaru Tanabe
IPC分类号： G03F1/20 , G03C5/00
CPC分类号： G03F1/60 , G03F1/00
摘要： A substrate set is a mask blank substrate set including a plurality of substrates each for use in a mask blank for producing a photomask to be chucked on a mask stage of an exposure apparatus. In each of the substrates in the mask blank substrate set, a main surface, on the side where a thin film for forming a transfer pattern is to be formed, has a convex shape being relatively high at its center and relatively low at its peripheral portion. In each substrate, the flatness in a 142 mm square area, including a central portion, of the main surface is 0.3 μm or less and the difference upon fitting to a reference main surface of a reference substrate is 40 nm or less.
摘要翻译：衬底组是掩模空白衬底组，其包括多个衬底，每个衬底用于掩模坯料中，用于制造要夹持在曝光设备的掩模台上的光掩模。在掩模基板组中的每个基板中，要形成转印图案的薄膜侧的主表面的凸形形状在其中心处相对较高，在其周边部分相对较低。在每个基板中，主表面的142mm正方形区域（包括中心部分）的平坦度为0.3μm以下，与基准基板的基准主面嵌合的差为40nm以下。

4. 发明申请

US20120208112A1 METHODS OF MANUFACTURING A MASK BLANK SUBSTRATE, A MASK BLANK, A PHOTOMASK, AND A SEMICONDUCTOR DEVICE 有权
标题翻译：制造掩模基板，掩模板，光电二极管和半导体器件的方法
公开(公告)号：US20120208112A1
公开(公告)日：2012-08-16
申请号：US13399286
申请日：2012-02-17
申请人： Masaru TANABE
发明人： Masaru TANABE
IPC分类号： G03F7/20 , G03F1/68 , G03F1/50 , G06F17/50
CPC分类号： G03F1/82 , G03F1/60
摘要： A before-chucking main surface shape is measured in an actual measurement region of a main surface of a substrate which has been precision-polished. Based on that shape and a shape of a mask stage (1), a simulated after-chucking main surface shape of the substrate, when a photomask (2) manufactured from the substrate is set in an exposure apparatus, is obtained. A selection is made of the substrate in which the after-chucking main surface shape has a flatness of a first threshold value or less in a virtual calculation region thereof. A calculation is performed and a selection is made of the substrate in which an after-correction main surface shape has a flatness of a second threshold value or less in the correction region.
摘要翻译：在精密抛光的基板的主表面的实际测量区域中测量前夹紧主表面形状。基于掩模台（1）的形状和形状，获得了当从基板制造的光掩模（2）被设置在曝光装置中时，基板的模拟的后夹紧主表面形状。在其虚拟计算区域中，对其中后夹具主表面形状具有第一阈值或更小的平坦度的基板进行选择。进行计算，并且在校正区域中对其中校正后主表面形状具有第二阈值或更小的平坦度的衬底进行选择。

5. 发明申请

US20110262846A1 METHODS OF MANUFACTURING A MASK BLANK SUBSTRATE, A MASK BLANK, A PHOTOMASK, AND A SEMICONDUCTOR DEVICE 有权
标题翻译：制造掩模基板，掩模板，光电二极管和半导体器件的方法
公开(公告)号：US20110262846A1
公开(公告)日：2011-10-27
申请号：US13122872
申请日：2010-03-17
申请人： Masaru Tanabe
发明人： Masaru Tanabe
IPC分类号： G03F7/20 , G06F17/50 , G03F1/00
CPC分类号： G03F1/82 , G03F1/60
摘要： A before-chucking main surface shape is measured in an actual measurement region of a main surface of a substrate which has been precision-polished and, based on the before-chucking main surface shape of the substrate and a shape of a mask stage (1), an after-chucking main surface shape of the substrate when a photomask (2) manufactured from the substrate is set in an exposure apparatus is obtained through simulation. A selection is made of the substrate in which the after-chucking main surface shape has a flatness of a first threshold value or less in a virtual calculation region thereof. For the selected substrate, a calculation is made of a first approximate curve approximate to a cross-sectional shape along a first direction in a correction region of the after-chucking main surface shape. Correction is performed by calculating an approximate curved surface from the first approximate curve and subtracting the approximate curved surface from the after-chucking main surface shape to calculate an after-correction main surface shape. A selection is made of the substrate in which the after-correction main surface shape has a flatness of a second threshold value or less in the correction region.
摘要翻译：在已经精密抛光的基板的主表面的实际测量区域中测量前夹紧主表面形状，并且基于基板的先前夹紧主表面形状和掩模台（1）的形状），通过模拟获得当从基板制造的光掩模（2）设置在曝光装置中时基板的后夹紧主表面形状。在其虚拟计算区域中，对其中后夹具主表面形状具有第一阈值或更小的平坦度的基板进行选择。对于所选择的基板，在后夹紧主表面形状的校正区域中计算接近于沿着第一方向的横截面形状的第一近似曲线。通过从第一近似曲线计算近似曲面并从后夹紧主表面形状减去近似曲面来计算校正后主表面形状来进行校正。对校正后的主表面形状的校正区域的平坦度为第二阈值以下的基板进行选择。

6. 发明申请

US20110097652A1 TRANSPARENT ARTICLE 有权
标题翻译：透明文章
公开(公告)号：US20110097652A1
公开(公告)日：2011-04-28
申请号：US12974400
申请日：2010-12-21
申请人： Masaru TANABE
发明人： Masaru TANABE
IPC分类号： G03F1/00
CPC分类号： G01N21/958 , G03F1/84
摘要： An inspection method of transparent articles wherein presence or absence of optical inhomogeneities within the transparent articles can be accurately inspected is provided.In an inspection method of transparent articles used in photolithography, for inspecting whether or not there are in homogeneities within transparent articles (4) formed of transparent material wherein optical properties regionally or locally change with regard to exposure light (specifically, interior defects 16), inspection light having a wavelength of 200 nm or shorter is introduced to the transparent article, and light (15) having a longer wavelength than the inspection light which is regionally or locally emitted is sensed on the optical path over which the inspection light is propagated within the transparent article, thereby detecting presence or absence of optical inhomogeneities within the transparent article.
摘要翻译：提供透明制品的检查方法，其中透明制品内的光学不均匀性的存在或不存在可以被精确地检查。在用于光刻的透明制品的检查方法中，为了检查由曝光光（特别是内部缺陷16）区域地或局部地改变光学特性的透明材料形成的透明制品（4）内是否均匀，将具有200nm或更短波长的检查光引入到透明物品中，并且在区域或局部发射的检查光的波长较长的光（15）在检测光在其内传播的光路上被感测透明制品，从而检测透明制品内存在或不存在光学不均匀性。

7. 发明授权

US07901840B2 Mask blank transparent substrate manufacturing method, mask blank manufacturing method, and exposure mask manufacturing method 有权
公开(公告)号：US07901840B2
公开(公告)日：2011-03-08
申请号：US11362353
申请日：2006-02-27
申请人： Masaru Tanabe
发明人： Masaru Tanabe
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F7/705 , G03F1/32 , G03F1/60 , G03F7/70783
摘要： A method includes a preparation step of preparing a transparent substrate having a precision-polished main surface, a surface shape information obtaining step of obtaining, as surface shape information, height information at a plurality of measurement points on the main surface of the transparent substrate that contacts a mask stage of an exposure apparatus, a simulation step of obtaining, based on the surface shape information and shape information of the mask stage, height information at the plurality of measurement points by simulating the state where the transparent substrate is set in the exposure apparatus, a flatness calculation step of calculating, based on the height information obtained through the simulation, a flatness of the transparent substrate when it is set in the exposure apparatus, a judging step of judging whether or not the calculated flatness satisfies a specification, and a thin film forming step of forming a thin film as serving as a mask pattern, on the main surface of the transparent substrate whose flatness satisfies the specification.

8. 发明申请

US20100173232A1 MASK BLANK PROVIDING SYSTEM, MASK BLANK PROVIDING METHOD, MASK BLANK TRANSPARENT SUBSTRATE MANUFACTURING METHOD, MASK BLANK MANUFACTURING METHOD, AND MASK MANUFACTURING METHOD 有权
标题翻译： MASK BLANK提供系统，MASK BLANK提供方法，MASK BLANK透明基板制造方法，MASK BLANK制造方法和MASK制造方法
公开(公告)号：US20100173232A1
公开(公告)日：2010-07-08
申请号：US12725032
申请日：2010-03-16
申请人： Osamu SUZUKI , Hiroyuki AKAGAWA , Masaru TANABE , Atsushi KAWAGUCHI , Naozumi ISHIBASHI
发明人： Osamu SUZUKI , Hiroyuki AKAGAWA , Masaru TANABE , Atsushi KAWAGUCHI , Naozumi ISHIBASHI
IPC分类号： G03F1/00
CPC分类号： G03F1/60 , G03F1/50 , Y10T428/31616
摘要： A mask blank manufacturing department manufactures a mask blank by forming a thin film to be a mask pattern on a mask blank transparent substrate. When providing the mask blank to a mask manufacturing department, the mask blank manufacturing department provides optical characteristic information (transmittance variation) of the mask blank transparent substrate and optical characteristic information (transmittance variation and/or phase difference variation) of the mask blank to the mask manufacturing department. The optical characteristic information of the mask blank transparent substrate is provided to the mask blank manufacturing department from a materials processing department that manufactures mask blank transparent substrates.
摘要翻译：掩模制造部门通过在掩模板透明基板上形成作为掩模图案的薄膜来制造掩模坯料。当掩模制造部门提供掩模坯料时，掩模制造部门提供掩模毛坯透明基板的光学特性信息（透射率变化）和掩模毛坯的光学特性信息（透射率变化和/或相位差变化）面具制造部门。掩模坯料透明基板的光学特性信息由制造掩模板透明基板的材料加工部门提供给掩模坯料制造部。

9. 发明申请

US20100124711A1 PHOTOMASK BLANK, PHOTOMASK BLANK MANUFACTURING METHOD, AND PHOTOMASK MANUFACTURING METHOD 失效
标题翻译： PHOTOMASK BLANK，PHOTOMASK BLANK制造方法和光电制造方法
公开(公告)号：US20100124711A1
公开(公告)日：2010-05-20
申请号：US12620805
申请日：2009-11-18
申请人： Masaru TANABE
发明人： Masaru TANABE
IPC分类号： G03F1/00
CPC分类号： G03F1/32
摘要： A photomask blank manufacturing method that forms, on a light-transmissive substrate, a thin film for forming a transfer pattern, thereby producing a thin-film coated substrate and then presses the thin-film coated substrate. The pressing is carried out, for example, by a cold isostatic pressing method in a range of 1000 to 10000 atmospheric pressure.
摘要翻译：一种在透光性基板上形成用于形成转印图案的薄膜的光掩模坯料制造方法，由此制造薄膜涂布基板，然后压制薄膜涂覆的基板。例如通过在1000〜10000大气压的范围内的冷等静压法进行压制。

10. 发明申请

US20100035164A1 MASK BLANK SUBSTRATE, MASK BLANK, EXPOSURE MASK, MASK BLANK SUBSTRATE MANUFACTURING METHOD, AND SEMICONDUCTOR MANUFACTURING METHOD 有权
标题翻译：掩模空白基板，掩模布，曝光掩模，掩模基板制造方法和半导体制造方法
公开(公告)号：US20100035164A1
公开(公告)日：2010-02-11
申请号：US12540405
申请日：2009-08-13
申请人： Masaru TANABE , Atsushi Kawaguchi , Hiroyuki Akagawa , Akihiro Kawahara
发明人： Masaru TANABE , Atsushi Kawaguchi , Hiroyuki Akagawa , Akihiro Kawahara
IPC分类号： G03F7/20 , G03F1/00
CPC分类号： G03F1/60 , G03F1/50 , Y10T428/31616
摘要： In a mask blank substrate to be chucked by a mask stage of an exposure system, the flatness of a rectangular flatness measurement area excluding an area of 2 mm inward from an outer peripheral end surface on a main surface of the mask blank substrate on its side to be chucked by the mask stage is 0.6 μm or less, and at least three of four corner portions of the flatness measurement area each have a shape that rises toward the outer peripheral side.
摘要翻译：在通过曝光系统的掩模台夹持的掩模基板中，除了掩模基板的主面的外周端面外侧的2mm外侧的矩形平坦度测量区域的平坦度被掩模台夹持的面积为0.6μm以下，平坦度测量区域的四个角部中的至少三个分别具有朝向外周侧上升的形状。

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