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1. 发明申请

US20080319709A1 DIMENSION MEASURING APPARATUS AND DIMENSION MEASURING METHOD FOR SEMICONDUCTOR DEVICE 有权
标题翻译：尺寸测量装置和半导体器件的尺寸测量方法
公开(公告)号：US20080319709A1
公开(公告)日：2008-12-25
申请号：US12128364
申请日：2008-05-28
申请人： Masaru KURIHARA , Masaru Izawa , Junichi Tanaka
发明人： Masaru KURIHARA , Masaru Izawa , Junichi Tanaka
IPC分类号： G01B21/00
CPC分类号： H01L22/12 , H01J2237/2813
摘要： A dimension of a specific part of a semiconductor device is measured with high accuracy and at a high speed.The invention provides a dimension measuring apparatus used for measuring a dimension of a semiconductor device having a first pattern of repeated structure and a second pattern that is linear and formed on the first pattern to extend over the repeated structure. The dimension measuring apparatus comprises: a shape information acquisition means, which acquires information on a shape of the first pattern; a width value acquisition means, which acquires a width value of each portion of the second pattern on a basis of an observation result of the second pattern by a microscope; an analytic area setting means, which sets a plurality of analytic areas on the second pattern such that the analytic areas are adapted for the first pattern's shape acquired by the shape information acquisition means; and a dimension determining means, which extracts, for each of the set analytic areas, width values of portions included in the analytic area in question out of width values acquired by the width value acquisition means, and uses the extracted width values to determine a dimension of the second pattern at portions overlapping the first pattern.
摘要翻译：半导体器件的特定部分的尺寸以高精度和高速度被测量。本发明提供了一种用于测量具有重复结构的第一图案的半导体器件的尺寸的尺寸测量装置，以及线性形成在第一图案上以在重复结构上延伸的第二图案。尺寸测量装置包括：形状信息获取装置，其获取关于第一图案的形状的信息; 宽度值获取装置，其基于通过显微镜的第二图案的观察结果获取第二图案的每个部分的宽度值; 分析区域设置装置，其在第二图案上设置多个分析区域，使得分析区域适于由形状信息获取装置获取的第一图案的形状; 以及维度确定装置，其针对每个所设定的分析区域提取由所述宽度值获取装置获取的宽度值中包含在所述分析区域中的部分的宽度值，并且使用所提取的宽度值来确定尺寸在与第一图案重叠的部分处的第二图案。

2. 发明申请

US20090299512A1 SEMICONDUCTOR MANUFACTURING SYSTEM AND METHOD 审中-公开
标题翻译：半导体制造系统和方法
公开(公告)号：US20090299512A1
公开(公告)日：2009-12-03
申请号：US12469716
申请日：2009-05-21
申请人： Junichi TANAKA , Masaru KURIHARA , Masaru IZAWA , Hiromasa ARAI , Yoichi NAKAHARA , Takahiro MARUYAMA , Nobuo FUJIWARA
发明人： Junichi TANAKA , Masaru KURIHARA , Masaru IZAWA , Hiromasa ARAI , Yoichi NAKAHARA , Takahiro MARUYAMA , Nobuo FUJIWARA
IPC分类号： G05B13/04 , G06F17/00 , G06N5/04
CPC分类号： G05B17/02
摘要： In the manufacturing system and the manufacturing method of a semiconductor device using a plasma treatment apparatus, a plasma treatment condition is controlled so that a desired shape is obtained after the plasma processing by using a processing shape prediction model for calculating the shape after the plasma processing from the inspection data of a wafer to be treated prior to the treatment and a response surface model for calculating the processing shape depending on a plasma treatment condition. In this configuration, the processing shape prediction model has an adjustable prediction model coefficient, and this prediction model coefficient is automatically calibrated.
摘要翻译：在使用等离子体处理装置的半导体装置的制造系统和制造方法中，通过使用等离子体处理后的形状计算处理形状预测模型等离子体处理后，控制等离子体处理条件，从而获得期望的形状从处理前的待处理晶片的检查数据和根据等离子体处理条件计算处理形状的响应面模型。在该配置中，处理形状预测模型具有可调节的预测模型系数，并且该预测模型系数被自动校准。

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