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1. 发明申请

US20130010535A1 NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY, AND METHOD FOR OPERATING NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT 有权
公开(公告)号：US20130010535A1
公开(公告)日：2013-01-10
申请号：US13619223
申请日：2012-09-14
申请人： Masao SHINGU , Jun FUJIKI , Naoki YASUDA , Koichi MURAOKA
发明人： Masao SHINGU , Jun FUJIKI , Naoki YASUDA , Koichi MURAOKA
IPC分类号： H01L29/792 , G11C11/40
CPC分类号： H01L29/7883 , G11C11/40 , G11C16/0408 , G11C16/0466 , G11C16/10 , G11C16/12 , G11C16/14 , G11C16/26 , H01L21/28282 , H01L27/11521 , H01L27/11556 , H01L27/11582 , H01L29/4234 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/788 , H01L29/792
摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film.

2. 发明申请

US20120025297A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20120025297A1
公开(公告)日：2012-02-02
申请号：US13204412
申请日：2011-08-05
申请人： Akira TAKASHIMA , Masao SHINGU , Koichi MURAOKA
发明人： Akira TAKASHIMA , Masao SHINGU , Koichi MURAOKA
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L21/28282 , H01L21/02145 , H01L21/02156 , H01L21/02161 , H01L21/28273 , H01L27/11521 , H01L27/11568 , H01L29/4234 , H01L29/513
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a source region and a drain region provided on a surface area of a semiconductor region, a tunnel insulating film provided on a channel between the source region and the drain region, a charge storage layer provided on the tunnel insulating film, a first dielectric film provided on the charge storage layer and containing lanthanum aluminum silicon oxide or oxynitride, a second dielectric film provided on the first dielectric film and containing oxide or oxynitride containing at least one of hafnium (Hf), zirconium (Zr), titanium (Ti), and a rare earth metal, and a control gate electrode provided on the second dielectric film.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括设置在半导体区域的表面区域上的源极区域和漏极区域，设置在源极区域和漏极区域之间的沟道上的隧道绝缘膜，设置有电荷存储层在隧道绝缘膜上，设置在电荷存储层上并含有镧铝氧化物或氧氮化物的第一电介质膜，设置在第一电介质膜上并含有氧化物或氮氧化物的第二电介质膜，其含有铪（Hf），锆（Zr），钛（Ti）和稀土金属，以及设置在第二电介质膜上的控制栅电极。

3. 发明申请

US20070132004A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20070132004A1
公开(公告)日：2007-06-14
申请号：US11548914
申请日：2006-10-12
申请人： Naoki YASUDA , Yukie NISHIKAWA , Koichi MURAOKA
发明人： Naoki YASUDA , Yukie NISHIKAWA , Koichi MURAOKA
IPC分类号： H01L29/788
CPC分类号： H01L29/42324 , H01L21/28273 , H01L21/28282 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/4234 , H01L29/513 , H01L29/7881 , H01L29/792
摘要： A nonvolatile semiconductor memory device according to an example of the present invention includes source/drain diffusion layers, a first insulation film on a channel between the source/drain diffusion layers, a floating gate electrode on the first insulation film and composed of first electrically conductive layers, a second insulation film on the floating gate electrode, and a control gate electrode on the second insulation film. In the case where one first electrically conductive layer excluding a top layer is defined as a reference layer among first electrically conductive layers, a work function of the reference layer is 4.0 eV or more and work functions of the reference layer and of the first electrically conductive layers above the reference layer gradually increase as the layers are proximal to the second insulation film.
摘要翻译：根据本发明实施例的非易失性半导体存储器件包括源极/漏极扩散层，源极/漏极扩散层之间的沟道上的第一绝缘膜，第一绝缘膜上的浮置栅电极和由第一导电层，在浮栅电极上的第二绝缘膜，以及在第二绝缘膜上的控制栅电极。在除了顶层之外的一个第一导电层被定义为第一导电层中的参考层的情况下，参考层的功函数为4.0eV或更大，并且参考层和第一导电层的功函数随着层靠近第二绝缘膜，参考层之上的层逐渐增加。

4. 发明申请

US20120319077A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US20120319077A1
公开(公告)日：2012-12-20
申请号：US13560557
申请日：2012-07-27
申请人： Naoki YASUDA , Daisuke MATSUSHITA , Koichi MURAOKA
发明人： Naoki YASUDA , Daisuke MATSUSHITA , Koichi MURAOKA
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , H01L27/1021 , H01L27/2418 , H01L27/2481
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a plurality of first interconnections arranged parallel, a plurality of second interconnections arranged parallel to intersect the first interconnections, and memory cell portions respectively arranged at intersecting portions between the first and second interconnections and each configured by laminating a variable-resistance element and a diode element. The diode element has a laminated structure having a first insulating film, a conductive fine grain layer and a second insulating film. The physical film thickness of the second insulating film is greater than the first insulating film and the dielectric constant of the second insulating film is greater than the first insulating film.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括平行布置的多个第一互连，并行布置成与第一互连相交的多个第二互连，以及分别布置在第一和第二互连之间的相交部分处的每个配置的存储单元部分通过层叠可变电阻元件和二极管元件。二极管元件具有具有第一绝缘膜，导电细晶粒层和第二绝缘膜的层叠结构。第二绝缘膜的物理膜厚度大于第一绝缘膜，并且第二绝缘膜的介电常数大于第一绝缘膜。

5. 发明申请

US20110284944A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：非挥发性半导体存储器件及其制造方法
公开(公告)号：US20110284944A1
公开(公告)日：2011-11-24
申请号：US13194099
申请日：2011-07-29
申请人： Yasushi NAKASAKI , Koichi MURAOKA , Naoki YASUDA , Shoko KIKUCHI
发明人： Yasushi NAKASAKI , Koichi MURAOKA , Naoki YASUDA , Shoko KIKUCHI
IPC分类号： H01L29/788 , H01L29/792
CPC分类号： H01L29/792 , H01L21/28273 , H01L21/28282 , H01L29/42332 , H01L29/42348 , H01L29/513 , H01L29/7881
摘要： A MONOS type non-volatile semiconductor memory device which is capable of electrically writing, erasing, reading and retaining data, the memory device including source/drain regions, a first gate insulating layer, a first charge trapping layer formed on the first gate insulating layer, a second gate insulating layer formed on the first charge trapping layer, and a controlling electrode formed on the second gate insulating layer. The first charge trapping layer includes an insulating film containing Al and O as major elements and having a defect pair formed of a complex of an interstitial O atom and a tetravalent cationic atom substituting for an Al atom, the insulating film also having electron unoccupied levels within the range of 2 eV-6 eV as measured from the valence band maximum of Al2O3.
摘要翻译：一种能够电写入，擦除，读取和保留数据的MONOS型非易失性半导体存储器件，所述存储器件包括源极/漏极区，第一栅极绝缘层，形成在第一栅极绝缘层上的第一电荷俘获层形成在第一电荷俘获层上的第二栅极绝缘层，以及形成在第二栅极绝缘层上的控制电极。第一电荷俘获层包括含有Al和O作为主要元素并且具有由间隙O原子和四价阳离子原子的复合物形成的缺陷对的绝缘膜，代替Al原子，绝缘膜还具有电子未占有的含量从Al2O3的价带最大值测量的2eV-6eV的范围。

6. 发明申请

US20110210303A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20110210303A1
公开(公告)日：2011-09-01
申请号：US13038771
申请日：2011-03-02
申请人： Koichi MURAOKA , Hiroyuki Nagashima
发明人： Koichi MURAOKA , Hiroyuki Nagashima
IPC分类号： H01L47/00
CPC分类号： G11C13/003 , G11C13/0004 , G11C13/0007 , G11C13/0014 , G11C2213/31 , G11C2213/32 , G11C2213/56 , G11C2213/71 , G11C2213/76 , H01L27/101 , H01L27/2418 , H01L27/2463
摘要： According to one embodiment, there is provided a nonvolatile semiconductor memory device including a first interconnection layer, memory cell modules each of which is formed by laminating a non-ohmic element layer with an MIM structure having an insulating film sandwiched between metal films and a variable resistance element layer, and a second interconnection layer formed on the memory cell modules, the insulating film of the non-ohmic element layer includes plural layers whose electron barriers and dielectric constants are different, or contains impurity atoms that form defect levels in the insulating film or contains semiconductor or metal dots. The nonvolatile semiconductor memory device using non-ohmic elements and variable resistance elements in which memory cells can be miniaturized and formed at low temperatures is realized by utilizing the above structures.
摘要翻译：根据一个实施例，提供了一种非易失性半导体存储器件，其包括第一互连层，存储单元模块，每个存储单元模块通过层叠具有MIM结构的非欧姆元件层而形成，所述MIM结构具有夹在金属膜之间的绝缘膜和可变电阻元件层和形成在存储单元模块上的第二互连层，非欧姆元件层的绝缘膜包括其电子势垒和介电常数不同的多个层，或包含在绝缘膜中形成缺陷水平的杂质原子或包含半导体或金属点。通过利用上述结构，实现了使用非欧姆元件和可变电阻元件的非易失性半导体存储器件，其中存储单元可以在低温下小型化并形成。

7. 发明申请

US20090166710A1 NONVOLATILE SEMICONDUCTOR MEMORY 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US20090166710A1
公开(公告)日：2009-07-02
申请号：US12189400
申请日：2008-08-11
申请人： Tatsuo SHIMIZU , Koichi MURAOKA
发明人： Tatsuo SHIMIZU , Koichi MURAOKA
IPC分类号： H01L29/00
CPC分类号： H01L29/792 , H01L21/28273 , H01L21/28282 , H01L29/513 , H01L29/517
摘要： A nonvolatile semiconductor memory device includes: a semiconductor substrate; and a memory cell. The memory cell includes: a source region and a drain region formed at a distance from each other on the semiconductor substrate; a tunnel insulating film formed on a channel region of the semiconductor substrate, the channel region being located between the source region and the drain region; a charge storage film formed on the tunnel insulating film; a charge block film formed on the charge storage film; and a control electrode that is formed on the charge block film. The control electrode includes a Hf oxide film or a Zr oxide film having at least one element selected from the first group consisting of V, Cr, Mn, and Tc added thereto, and having at least one element selected from the second group consisting of F, H, and Ta added thereto.
摘要翻译：非易失性半导体存储器件包括：半导体衬底; 和存储单元。存储单元包括：在半导体衬底上形成为彼此间隔一定距离的源极区域和漏极区域; 隧道绝缘膜，形成在所述半导体衬底的沟道区上，所述沟道区位于所述源极区和所述漏极区之间; 形成在隧道绝缘膜上的电荷存储膜; 形成在电荷存储膜上的电荷阻挡膜; 以及形成在电荷阻挡膜上的控制电极。控制电极包括Hf氧化物膜或Zr氧化物膜，其具有从添加有V，Cr，Mn和Tc的第一组中选择的至少一种元素，并且具有至少一种选自F ，H和Ta。

8. 发明申请

US20090236654A1 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20090236654A1
公开(公告)日：2009-09-24
申请号：US12339993
申请日：2008-12-19
申请人： Takamitsu ISHIHARA , Koichi MURAOKA
发明人： Takamitsu ISHIHARA , Koichi MURAOKA
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/7887 , H01L21/28273 , H01L21/28282 , H01L27/11521 , H01L29/42324 , H01L29/4234 , H01L29/512 , H01L29/7881 , H01L29/792
摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor storage device including: a semiconductor substrate; a source region and a drain region that are formed in the semiconductor substrate so as to be separated from each other and so as to define a channel region therebetween; a tunnel insulating film that is formed on the channel region; an insulative charge storage film that is formed on the tunnel insulating film; a conductive charge storage film that is formed on the insulative charge storage film so as to be shorter than the insulative charge storage film in a channel direction; an interlayer insulating film that is formed on the conductive charge storage film; and a gate electrode that is formed on the interlayer insulating film.
摘要翻译：根据本发明的一个方面，提供了一种非易失性半导体存储装置，包括：半导体衬底; 源极区和漏极区，形成在所述半导体衬底中以便彼此分离并且在其间限定沟道区; 形成在沟道区上的隧道绝缘膜; 形成在隧道绝缘膜上的绝缘电荷存储膜; 导电电荷存储膜，其形成在所述绝缘性电荷存储膜上，以使其比所述绝缘性电荷存储膜在沟道方向短; 形成在导电性电荷存储膜上的层间绝缘膜; 以及形成在层间绝缘膜上的栅电极。

9. 发明申请

US20090057751A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20090057751A1
公开(公告)日：2009-03-05
申请号：US12199036
申请日：2008-08-27
申请人： Keiko ARIYOSHI , Akira TAKASHIMA , Shoko KIKUCHI , Koichi MURAOKA
发明人： Keiko ARIYOSHI , Akira TAKASHIMA , Shoko KIKUCHI , Koichi MURAOKA
IPC分类号： H01L29/788 , H01L29/792
CPC分类号： H01L29/7881 , H01L21/28273 , H01L21/28282 , H01L29/42324 , H01L29/4234 , H01L29/513 , H01L29/517
摘要： A nonvolatile semiconductor memory device according to an example of the present invention includes a semiconductor region, source/drain areas arranged separately in the semiconductor region, a tunnel insulating film arranged on a channel region between the source/drain areas, a floating gate electrode arranged on the tunnel insulating film, an inter-electrode insulating film arranged on the floating gate electrode, and a control gate electrode arranged on the inter-electrode insulating film. The inter-electrode insulating film includes La, Al and Si.
摘要翻译：根据本发明实施例的非易失性半导体存储器件包括半导体区域，在半导体区域中单独布置的源极/漏极区域，布置在源极/漏极区域之间的沟道区域上的隧道绝缘膜，布置成在隧道绝缘膜上，布置在浮栅电极上的电极间绝缘膜和布置在电极间绝缘膜上的控制栅电极。电极间绝缘膜包括La，Al和Si。

10. 发明申请

US20130062686A1 NON-VOLATILE SEMICONDUCTOR MEMORY USING CHARGE-ACCUMULATION INSULATING FILM 有权
标题翻译：使用电荷累积绝缘膜的非挥发性半导体存储器
公开(公告)号：US20130062686A1
公开(公告)日：2013-03-14
申请号：US13665209
申请日：2012-10-31
申请人： Tatsuo SHIMIZU , Koichi MURAOKA
发明人： Tatsuo SHIMIZU , Koichi MURAOKA
IPC分类号： H01L29/792
CPC分类号： H01L29/4234 , H01L27/115 , H01L27/11568 , H01L29/513 , H01L29/66833 , H01L29/792
摘要： There is provided a non-volatile semiconductor memory having a charge accumulation layer of a configuration where a metal oxide with a dielectric constant sufficiently higher than a silicon nitride, e.g., a Ti oxide, a Zr oxide, or a Hf oxide, is used as a base material and an appropriate amount of a high-valence substance whose valence is increased two levels or more (a VI-valence) is added to produce a trap level that enables entrance and exit of electrons with respect to the base material.
摘要翻译：提供了一种具有电荷累积层的非易失性半导体存储器，其中使用具有足够高的氮化硅（例如Ti氧化物，Zr氧化物或Hf氧化物）的介电常数的金属氧化物作为碱性物质和适量的高价物质，其价态增加两个或更多（VI价），以产生能使电子相对于基材进出的陷阱水平。

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