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    • 3. 发明申请
    • STORAGE APPARATUS AND VOLUME RESTORATION METHOD
    • 存储装置和容量恢复方法
    • US20090254721A1
    • 2009-10-08
    • US11968277
    • 2008-01-02
    • Hidenori SUZUKIShunji KAWAMURA
    • Hidenori SUZUKIShunji KAWAMURA
    • G06F12/16G06F12/00
    • G06F11/1469G06F11/1471G06F11/1666G06F11/201G06F11/2089G06F2201/84
    • A storage apparatus conducts, in a protection period, data protection processing for protecting, in a third logical volume, data stored in a first logical volume by using backup data stored in a second logical volume, and suspends the data protection processing in a no-protection period, during which backup relative to the second logical volume is suspended, in the protection period. Then, upon receiving an external order for restoring the first logical volume to its state as of at a time not in the no-protection period within the protection period, the storage apparatus restores the first logical volume to its state as of at a time of the order by using the data backed up in the second logical volume and the data protected in the third logical volume.
    • 存储装置在保护期间进行数据保护处理,用于通过使用存储在第二逻辑卷中的备份数据在第三逻辑卷中保护存储在第一逻辑卷中的数据,并将数据保护处理暂停在第二逻辑卷中, 保护期间,在保护期间,相对于第二逻辑卷的备份被暂停。 然后,存储装置在接收到用于将第一逻辑卷恢复到其在保护期间内不处于非保护期间的状态的外部命令时,将第一逻辑卷恢复到其当前状态 通过使用在第二逻辑卷中备份的数据和第三逻辑卷中保护的数据的顺序。
    • 4. 发明申请
    • METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
    • 制造半导体器件的方法
    • US20100055879A1
    • 2010-03-04
    • US12480077
    • 2009-06-08
    • Yuichi HARANOHidenori SUZUKI
    • Yuichi HARANOHidenori SUZUKI
    • H01L21/326
    • H01L21/6831
    • A wafer is mounted on the top surface of the stage having an electrostatic chuck function, and the wafer at 50° C. or more is cooled to a temperature lower than 50° C. In this step, the voltage to be applied to the internal electrode provided in the stage is raised stepwise to gradually increase the contact area between the back surface of the wafer and the top surface of the stage. Finally, a chuck voltage is applied to the internal electrode, so that the entire back surface of the wafer is uniformly attracted to the top surface of the stage. This reduces damage occurring in the top surface of the stage due to rubbing between the back surface of the wafer and the top surface of the stage.
    • 将晶片安装在具有静电卡盘功能的平台的顶表面上,并且将在50℃或更高的晶片冷却至低于50℃的温度。在该步骤中,施加到内部的电压 设置在台架中的电极逐步升高以逐渐增加晶片的背表面和台的顶表面之间的接触面积。 最后,向内部电极施加卡盘电压,使得晶片的整个背面被均匀地吸引到台的顶面。 这减少了由于在晶片的后表面和台的顶表面之间的摩擦而在台的顶表面中发生的损坏。