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1. 发明授权

US4319397A Method of producing semiconductor displacement transducer 失效
标题翻译：半导体位移传感器的制造方法
公开(公告)号：US4319397A
公开(公告)日：1982-03-16
申请号：US165985
申请日：1980-07-07
申请人： Masanori Tanabe , Satoshi Shimada , Akio Yasukawa , Hideyuki Nemoto , Motohisa Nishihara , Masatoshi Tsuchiya , Ko Soeno
发明人： Masanori Tanabe , Satoshi Shimada , Akio Yasukawa , Hideyuki Nemoto , Motohisa Nishihara , Masatoshi Tsuchiya , Ko Soeno
IPC分类号： G01D5/16 , H01L29/84 , H01L21/58
CPC分类号： H01L29/84 , Y10T29/49103
摘要： A strain gauge is formed on one main surface of a semiconductor single crystal substrate while an insulating oxide film is formed on the other main surface of the substrate. A metal junction layer including several layers inclusive of eutectic alloy layers is formed on the surface of the insulating oxide film and the thus prepared structure is mounted on a metal strain generator. By heating this assembly to temperatures approximating to the eutectic point of the eutectic alloy layer, the semiconductor substrate and the metal strain generator are joined together.
摘要翻译：在半导体单晶基板的一个主表面上形成应变计，同时在基板的另一个主表面上形成绝缘氧化膜。在绝缘氧化膜的表面上形成包括共晶合金层的数层的金属接合层，将这样制作的结构安装在金属应变发生器上。通过将该组件加热到接近共晶合金层的共晶点的温度，将半导体衬底和金属应变发生器连接在一起。

2. 发明授权

US4166384A Semiconductor transducer 失效
标题翻译：半导体传感器
公开(公告)号：US4166384A
公开(公告)日：1979-09-04
申请号：US940077
申请日：1978-09-06
申请人： Yasumasa Matsuda , Kazuji Yamada , Satoshi Shimada , Motohisa Nishihara , Tomio Yasuda , Masatoshi Tsuchiya , Ko Soeno , Mitsuo Ai , Takeo Nagata , Yoshitaka Matsuoka
发明人： Yasumasa Matsuda , Kazuji Yamada , Satoshi Shimada , Motohisa Nishihara , Tomio Yasuda , Masatoshi Tsuchiya , Ko Soeno , Mitsuo Ai , Takeo Nagata , Yoshitaka Matsuoka
IPC分类号： G01L1/26 , C21D8/00 , C22C38/00 , C22C38/10 , G01D5/16 , G01L1/22 , G01L9/00 , G01L1/04 , G01L1/18
CPC分类号： G01L1/2293 , G01L9/0055
摘要： A semiconductor transducer comprising an improved strain-yielding body yielding a strain in response to the impartation of a force or displacement, and a semiconductor strain gauge bonded to the strain-yielding body. The improved strain-yielding body is made of an iron-nickel-cobalt alloy containing 28.2 to 31.0% by weight of nickel and 15.0 to 19.5% by weight of cobalt. This iron-nickel-cobalt alloy is initially heated up to a temperature above 600.degree. C. for the purpose of standard heat treatment for removing its internal strain. After the standard heat treatment, the iron-nickel-cobalt alloy is subjected to cold working at a working rate of more than and including 60%, and is then subjected to heat treatment at a temperature between 350.degree. C. and 600.degree. C. The heat-treated iron-nickel-cobalt alloy is shaped into the predetermined form of the strain-yielding body.
摘要翻译：一种半导体换能器，其包括响应于施加力或位移而产生应变的改进的应变屈服体以及结合到应变屈服体的半导体应变仪。改进的应变产生体由含有28.2至31.0重量％的镍和15.0至19.5重量％的钴的铁镍钴合金制成。为了去除其内部应变，这种铁镍钴合金最初被加热到高于600℃的温度以进行标准热处理。经过标准热处理后，铁镍钴合金以大于60％的加工速度进行冷加工，然后在350℃〜600℃的温度下进行热处理。热处理的铁镍钴合金被成形为应变产生体的预定形式。

3. 发明授权

US4499774A Semiconductor pressure transducer 失效
标题翻译：半导体压力传感器
公开(公告)号：US4499774A
公开(公告)日：1985-02-19
申请号：US284340
申请日：1981-07-17
申请人： Masatoshi Tsuchiya , Ko Soeno , Tomomasa Yoshida
发明人： Masatoshi Tsuchiya , Ko Soeno , Tomomasa Yoshida
IPC分类号： G01L9/04 , C21D9/00 , C22C38/00 , C22C38/10 , G01L9/00 , H01L29/84 , G01L9/06
CPC分类号： G01L19/147
摘要： A semiconductor pressure transducer comprising a piezoresistive semiconductor diaphragm, a cylindrical stem made of a glass having a thermal expansion coefficient approximating that of the diaphragm and hermetically bonded by anodic bonding to the latter, and a cylindrical holder hermetically bonded by anodic bonding to the cylindrical stem is disclosed. The holder is made of a ferromagnetic alloy material containing Fe, Co and Ni and having a mean thermal expansion coefficient of 35.times.10.sup.-7 /.degree.C. or less within the temperature range between 30.degree. C. and 350.degree. C.
摘要翻译：一种半导体压力传感器，包括压电半导体膜片，由玻璃制成的圆柱形阀杆，其热膨胀系数接近隔膜的热膨胀系数，并通过阳极接合而密封粘合到隔膜上;以及圆柱形保持器，通过阳极接合气密地接合到圆柱形杆被披露。夹持器由含Fe，Co和Ni的铁磁合金材料制成，在30℃至350℃的温度范围内的平均热膨胀系数为35×10 -7 /℃以下。

4. 发明授权

US4236925A Method of producing sintered material having high damping capacity and wearing resistance and resultant products 失效
标题翻译：具有高阻尼能力和耐磨性的烧结材料的制造方法以及所得产品
公开(公告)号：US4236925A
公开(公告)日：1980-12-02
申请号：US932641
申请日：1978-08-10
申请人： Jin Onuke , Masateru Suwa , Ko Soeno , Akio Okayama , Masatoshi Tsuchiya , Hisakiti Onodera
发明人： Jin Onuke , Masateru Suwa , Ko Soeno , Akio Okayama , Masatoshi Tsuchiya , Hisakiti Onodera
IPC分类号： B22F3/14 , B22F3/12 , B22F3/16 , C22C1/04 , C22C9/00 , C22C33/02 , B22F3/00 , B22F5/00
CPC分类号： B22F3/12 , B22F3/16
摘要： A method of producing a sintered material having a high wearing resistance and damping capacity by mixing 5-30 wt. % of a powdery metal selected from the group consisting of lead, magnesium and graphite with the remainder of a powdery metal selected from the group consisting of iron, copper, aluminum, cast iron and alloys thereof, compression-molding the mixture, subjecting the same to plastic treatment and sintering the same by heating to a temperature above a recrystallization point of the matrix metal, and the sintered material thus produced.
摘要翻译：一种通过混合5-30重量％的具有高耐磨性和阻尼能力的烧结材料的制造方法。％的选自铅，镁和石墨的粉末金属，剩余的选自铁，铜，铝，铸铁及其合金的粉末状金属，将该混合物压制成型通过加热到基体金属的再结晶点以上的温度和由此制造的烧结材料进行塑性处理和烧结。

5. 发明授权

US4500904A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4500904A
公开(公告)日：1985-02-19
申请号：US544119
申请日：1983-10-20
申请人： Jin Onuki , Ko Soeno , Keiichi Morita , Hisakithi Onodera
发明人： Jin Onuki , Ko Soeno , Keiichi Morita , Hisakithi Onodera
IPC分类号： H01L21/52 , H01L21/58 , H01L21/60 , H01L23/051 , H01L23/492 , H01L23/48
CPC分类号： H01L24/83 , H01L23/051 , H01L23/4924 , H01L23/4928 , H01L24/33 , H01L2224/291 , H01L2224/29111 , H01L2224/29124 , H01L2224/2919 , H01L2224/83191 , H01L2224/83801 , H01L2224/8385 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10157 , H01L2924/12036 , H01L2924/1301 , H01L2924/15763 , H01L2924/3025
摘要： A solder joint between a semiconductor substrate and an electrode is disclosed in which that principal surface of the semiconductor substrate where an n-type semiconductor layer is exposed is bonded to the electrode with brazing solder, and the brazing solder includes aluminum solder provided on the side of the semiconductor substrate and copper solder provided on the side of the electrode. Since solid phase adhesion can be achieved between aluminum and copper even at temperatures below an eutectic temperature of 548.degree. C., the semiconductor substrate can be soldered to the electrode at the low temperatures.
摘要翻译：公开了半导体衬底和电极之间的焊接接头，其中露出n型半导体层的半导体衬底的主表面用钎焊焊接到电极上，并且钎焊焊料包括设置在侧面上的铝焊料的半导体衬底和设置在电极侧的铜焊料。由于即使在低于共晶温度548℃的温度下也可以在铝和铜之间实现固相粘合，所以半导体衬底可以在低温下焊接到电极上。

6. 发明授权

US4486245A Method of producing nickel base alloy structure with NiAl coating 失效
标题翻译：用NiAl涂层生产镍基合金结构的方法
公开(公告)号：US4486245A
公开(公告)日：1984-12-04
申请号：US258558
申请日：1981-04-29
申请人： Mitsuo Chigasaki , Kiyoshi Otaka , Akira Okayama , Kenichi Onisawa , Ko Soeno
发明人： Mitsuo Chigasaki , Kiyoshi Otaka , Akira Okayama , Kenichi Onisawa , Ko Soeno
IPC分类号： C23C10/48 , C23C10/60 , F01D5/28 , C22F1/10
CPC分类号： F01D5/288 , C23C10/48 , C23C10/60
摘要： A structure comprising a main body formed of a nickel base alloy, and a NiAl coating applied to the main body, wherein the NiAl coating includes a nickel rich NiAl layer and an aluminum rich NiAl layer and the thickness ratio of the nickel rich NiAl layer to the whole NiAl coating is in a range between 20 and 40%. A method of applying an aluminum coating to a nickel base alloy comprising the steps of forming an aluminide layer of Ni.sub.2 Al.sub.3 on the surface portion of the nickel base alloy by the diffusion and penetration of aluminum, and subjecting the alumide layer to heat treatment to change the aluminide layer to a monoaluminide layer and making the thickness ratio of a nickel rich NiAl layer to the whole monoaluminide layer be in the range between 20 and 40%.
摘要翻译：包括由镍基合金形成的主体和施加到主体的NiAl涂层的结构，其中所述NiAl涂层包括富镍的NiAl层和富铝的NiAl层，并且所述富镍的NiAl层的厚度比与整个NiAl涂层在20至40％的范围内。一种将铝涂层施加到镍基合金的方法，包括以下步骤：通过铝的扩散和渗透在镍基合金的表面部分上形成Ni2Al3的铝化物层，并对铝硅酸盐层进行热处理以改变使铝化物层与单卤化物层成膜，并使富镍的NiAl层与整个单铝化物层的厚度比在20至40％的范围内。

7. 发明授权

US4114243A Process for producing cathode for cathode ray tube of directly heating type 失效
标题翻译：直接加热式阴极射线管阴极生产工艺
公开(公告)号：US4114243A
公开(公告)日：1978-09-19
申请号：US775618
申请日：1977-03-08
申请人： Ko Soeno , Toshio Doi , Tomio Iizuka , Hiroshi Sakamoto , Hisashi Ando , Tetsuo Oyama , Akira Misumi
发明人： Ko Soeno , Toshio Doi , Tomio Iizuka , Hiroshi Sakamoto , Hisashi Ando , Tetsuo Oyama , Akira Misumi
IPC分类号： H01J1/14 , H01J9/04
CPC分类号： H01J9/04
摘要： In a process for producing a cathode for a cathode ray tube of directly heating type, which comprises shaping a heat-resistant and electro-conductive, flat metal plate, into a cathode substrate body having two leg pieces extended in the same direction and a flat part connected to one end of each leg piece, forming a heat-diffusible metal powder layer having a good affinity to said flat metal plate and on an outer surface of said flat part, heating the powder layer, thereby diffusion bonding the powder layer to the flat part and forming a bonding layer having an uneven surface, to which a thermionic emission layer is to be bonded, and forming the thermionic emission layer on the surface of the bonding layer, the process is characterized by forming on said flat metal plate a metal layer having a good affinity to the flat metal plate, by diffusion bonding, thereby forming a compound plate, and shaping the resulting compound plate into the shape of said cathode substrate body. A cathode having less thermal deformation and a longer life can be produced thereby.Furthermore, the process is characterized by applying a plastic working to the compound plate to a desired thickness and shaping the resulting compound plate into the shape of the cathode substrate body, and a cathode having much less thermal deformation and much longer life can be produced thereby.
摘要翻译：在直接加热型阴极射线管用阴极的制造方法中，包括将耐热导电平板状金属板成形为具有沿相同方向延伸的两个支腿的阴极基板主体，形成与所述平板状金属板和所述平坦部的外表面具有良好亲和性的热扩散性金属粉末层，加热所述粉末层，从而将所述粉末层扩散到并且形成具有不平坦表面的接合层，热电子发射层将被结合到其上，并且在接合层的表面上形成热离子发射层，其特征在于在所述平坦金属板上形成金属通过扩散接合对平板状金属板具有良好的亲和性，从而形成复合板，并将得到的化合物板成形为所述阴极基体的形状。因此可以产生具有较少热变形和较长寿命的阴极。

8. 发明授权

US4220891A Directly heated cathode for electron tube 失效
标题翻译：电子管直接加热阴极
公开(公告)号：US4220891A
公开(公告)日：1980-09-02
申请号：US25582
申请日：1979-03-30
申请人： Hisashi Ando , Ko Soeno , Hiroshi Sakamoto , Testuo Oyama , Takao Kawamura , Hiroshi Fukushima
发明人： Hisashi Ando , Ko Soeno , Hiroshi Sakamoto , Testuo Oyama , Takao Kawamura , Hiroshi Fukushima
IPC分类号： H01J1/14 , H01J1/15 , H01J29/04 , H01J19/06
CPC分类号： H01J1/14
摘要： A directly heated cathode for electron tube having a stable electron emission characteristic and a low cut-off voltage is provided. The cathode comprises a base metal of an alloy consisting essentially of 20-30% by weight of tungsten and a trace amount to 0.25% by weight of zirconium, the balance being nickel, binder dots of metallic nickel powders distributed on a flat part at the front side of the base metal, and a layer of thermoelectron emission oxides laid on the flat part at the front side of the base metal. The layer of thermoelectron emission oxides is in direct contact with the flat part through clearances among the binder dots of the metallic nickel powders.
摘要翻译：提供具有稳定的电子发射特性和低截止电压的用于电子管的直接加热阴极。阴极包括基本上由20-30重量％的钨组成的合金的基体金属和微量的0.25重量％的锆，余量为镍，分布在平坦部分上的金属镍粉末的粘结点贱金属的前侧，以及放置在贱金属前侧的平坦部分上的热电子发射氧化物层。热电子发射氧化物层通过金属镍粉末的粘合剂点之间的间隙与平坦部分直接接触。

9. 发明授权

US4310777A Directly heated cathode for electron tube 失效
标题翻译：电子管直接加热阴极
公开(公告)号：US4310777A
公开(公告)日：1982-01-12
申请号：US110920
申请日：1980-01-10
申请人： Hiroshi Fukushima , Ko Soeno , Hisashi Ando , Shigehiko Yamamoto , Toshiyuki Aida
发明人： Hiroshi Fukushima , Ko Soeno , Hisashi Ando , Shigehiko Yamamoto , Toshiyuki Aida
IPC分类号： H01J1/14 , H01J1/15 , H01J1/18
CPC分类号： H01J1/18
摘要： A directly heated cathode for an electron tube comprising a base plate made of an alloy containing 20 to 30% by weight of W, 0.12 to 0.28% by weight of Zr and the remainder being Ni and an electron emissive oxide layer disposed directly on the base plate shows good and stable electron emission properties and when it is installed in a television picture tube, the picture tube shows excellent initial properties.
摘要翻译：一种用于电子管的直接加热阴极，包括由包含20至30重量％的W，0.12至0.28重量％的Zr和余量为Ni的合金制成的基板和直接设置在基底上的电子发射氧化物层板显示出良好且稳定的电子发射特性，并且当其安装在电视显像管中时，显像管显示出优异的初始特性。

10. 发明授权

US4246693A Method of fabricating semiconductor device by bonding together silicon substrate and electrode or the like with aluminum 失效
标题翻译：通过将硅衬底和电极等与铝结合在一起来制造半导体器件的方法
公开(公告)号：US4246693A
公开(公告)日：1981-01-27
申请号：US32018
申请日：1979-04-20
申请人： Jin Onuki , Ko Soeno , Masateru Suwa , Hisakichi Onodera
发明人： Jin Onuki , Ko Soeno , Masateru Suwa , Hisakichi Onodera
IPC分类号： B23K1/00 , H01L21/306 , H01L21/52 , H01L21/60 , H01L29/41 , H01L21/22 , H01L21/28
CPC分类号： H01L24/80 , H01L21/306 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01051 , H01L2924/01072 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , H01L2924/12036 , H01L2924/1301 , Y10S148/018 , Y10S148/02
摘要： There is provided a method of fabricating a semiconductor device wherein in a bonding surface of a silicon substrate of n-type conductivity are formed recesses having each a bonding surface of a higher order plane index than that of the bonding surface of the silicon substrate, and the substrate and electrodes and the like members are bonded together with an aluminum solder so as to decrease a forward voltage drop FVD. After forming the recesses but prior to the bonding with the aluminum solder, phosphor is diffused into a region ranging from the bonding surface to a depth of 20 microns, thereby further decreasing the forward voltage drop FVD. When cooling after the bonding, a temperature gradient is established so that temperature in the silicon substrate is higher than a temperature in the molten aluminum so that the forward voltage drop FVD can be decreased further.
摘要翻译：提供了一种制造半导体器件的方法，其中在n型导电性硅衬底的接合表面中形成具有比硅衬底的接合表面高的平面折射率的接合表面的凹槽，以及基板和电极等部件用铝焊料接合在一起，以便减小正向压降FVD。在形成凹部之后但是在与铝焊料接合之前，磷光体扩散到从接合表面到20微米深度的区域中，从而进一步减小正向压降FVD。在接合后进行冷却时，建立温度梯度，使得硅衬底中的温度高于熔融铝中的温度，从而可以进一步降低正向压降FVD。

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