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1. 发明授权

US08654313B2 Exposing method and method of manufacturing semiconductor device 失效
标题翻译：揭示半导体器件制造方法和方法
公开(公告)号：US08654313B2
公开(公告)日：2014-02-18
申请号：US12952835
申请日：2010-11-23
申请人： Masanori Takahashi , Takashi Sato , Satoshi Tanaka , Soichi Inoue , Takamasa Takaki
发明人： Masanori Takahashi , Takashi Sato , Satoshi Tanaka , Soichi Inoue , Takamasa Takaki
IPC分类号： G03B27/32 , G03B27/54 , G03B27/72 , G03B27/52
CPC分类号： G03F7/2016 , G03F7/70408 , H01L21/0274
摘要： According to one embodiment, on a substrate, a resist layer is laminated on an upper side of a pattern formation layer on which a desired pattern is formed. A diffraction pattern that diffracts exposure light irradiated on the substrate is formed further on the upper side than the resist layer. Overall exposure is performed from above the diffraction pattern using a deformed light having illumination light source shape determined according to the desired pattern. Diffracted light diffracted on the diffraction pattern by the exposure is irradiated on the resist layer.
摘要翻译：根据一个实施例，在基板上，在其上形成有所需图案的图案形成层的上侧层压抗蚀剂层。衍射照射在基板上的曝光光的衍射图案进一步形成在抗蚀剂层的上侧。使用具有根据期望图案确定的照明光源形状的变形光从衍射图案上方进行总体曝光。通过曝光在衍射图案上衍射的衍射光被照射在抗蚀剂层上。

2. 发明申请

US20110122390A1 EXPOSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND EXPOSURE APPARATUS 失效
标题翻译：曝光方法，制造半导体器件的方法和曝光装置
公开(公告)号：US20110122390A1
公开(公告)日：2011-05-26
申请号：US12952835
申请日：2010-11-23
申请人： Masanori TAKAHASHI , Takashi Sato , Satoshi Tanaka , Soichi Inoue , Takamasa Takaki
发明人： Masanori TAKAHASHI , Takashi Sato , Satoshi Tanaka , Soichi Inoue , Takamasa Takaki
IPC分类号： G03B27/72 , G03F7/20
CPC分类号： G03F7/2016 , G03F7/70408 , H01L21/0274
摘要： According to one embodiment, on a substrate, a resist layer is laminated on an upper side of a pattern formation layer on which a desired pattern is formed. A diffraction pattern that diffracts exposure light irradiated on the substrate is formed further on the upper side than the resist layer. Overall exposure is performed from above the diffraction pattern using a deformed light having illumination light source shape determined according to the desired pattern. Diffracted light diffracted on the resist layer.
摘要翻译：根据一个实施例，在基板上，在其上形成有所需图案的图案形成层的上侧层压抗蚀剂层。衍射照射在基板上的曝光光的衍射图案进一步形成在抗蚀剂层的上侧。使用具有根据期望图案确定的照明光源形状的变形光从衍射图案上方进行总体曝光。衍射光在抗蚀剂层上衍射。

3. 发明申请

US20070234269A1 Light intensity distribution simulation method and computer program product 失效
标题翻译：光强分布模拟方法和计算机程序产品
公开(公告)号：US20070234269A1
公开(公告)日：2007-10-04
申请号：US11730102
申请日：2007-03-29
申请人： Satoshi Tanaka , Shoji Mimotogi , Takashi Sato , Soichi Inoue
发明人： Satoshi Tanaka , Shoji Mimotogi , Takashi Sato , Soichi Inoue
IPC分类号： G06F17/50
CPC分类号： G06F17/5009
摘要： A light intensity distribution simulation method for predicting an intensity distribution of light on a substrate when photomask including a pattern is irradiated with light in which a shape distribution of an effective light source is defined includes extracting plural point light sources from a shape distribution of the effective light source, entering the light emitted from each of the plural point light sources onto the pattern of the photomask, calculating an effective shape for each of the plural point light sources, the effective shape being a pattern obtained by excluding a part which is not irradiated with the light directly due to a sidewall of a pattern film including the pattern from a design shape of an aperture of the pattern, and calculating a distribution of diffraction light generated in the pattern for each of the plural point light sources by using the effective shape.
摘要翻译：一种光强度分布模拟方法，用于当定义包含图案的光掩模在基板上的光的强度分布时，其中所述光被定义为其中限定有效光源的形状分布的光包括从有效光源的形状分布中提取多个点光源光源，将从多个点光源中的每一个发射的光输入到光掩模的图案上，计算多个点光源中的每一个的有效形状，有效形状是通过排除未照射的部分获得的图案直接由于来自图案的孔的设计形状的图案的图案膜的侧壁而直接导光，并且通过使用有效形状来计算针对每个多个点光源的图案中产生的衍射光的分布。

4. 发明授权

US07596776B2 Light intensity distribution simulation method and computer program product 失效
标题翻译：光强分布模拟方法和计算机程序产品
公开(公告)号：US07596776B2
公开(公告)日：2009-09-29
申请号：US11730102
申请日：2007-03-29
申请人： Satoshi Tanaka , Shoji Mimotogi , Takashi Sato , Soichi Inoue
发明人： Satoshi Tanaka , Shoji Mimotogi , Takashi Sato , Soichi Inoue
IPC分类号： G06F17/50
CPC分类号： G06F17/5009
摘要： A light intensity distribution simulation method for predicting an intensity distribution of light on a substrate when photomask including a pattern is irradiated with light in which a shape distribution of an effective light source is defined includes extracting plural point light sources from a shape distribution of the effective light source, entering the light emitted from each of the plural point light sources onto the pattern of the photomask, calculating an effective shape for each of the plural point light sources, the effective shape being a pattern obtained by excluding a part which is not irradiated with the light directly due to a sidewall of a pattern film including the pattern from a design shape of an aperture of the pattern, and calculating a distribution of diffraction light generated in the pattern for each of the plural point light sources by using the effective shape.
摘要翻译：一种光强度分布模拟方法，用于当定义包含图案的光掩模在基板上的光的强度分布时，其中所述光被定义为其中限定有效光源的形状分布的光包括从有效光源的形状分布中提取多个点光源光源，将从多个点光源中的每一个发射的光输入到光掩模的图案上，计算多个点光源中的每一个的有效形状，有效形状是通过排除未照射的部分获得的图案直接由于来自图案的孔的设计形状的图案的图案膜的侧壁而直接导光，并且通过使用有效形状来计算针对每个多个点光源的图案中产生的衍射光的分布。

5. 发明申请

US20090021711A1 METHOD OF INSPECTING EXPOSURE SYSTEM AND EXPOSURE SYSTEM 审中-公开
标题翻译：检查曝光系统和曝光系统的方法
公开(公告)号：US20090021711A1
公开(公告)日：2009-01-22
申请号：US12173943
申请日：2008-07-16
申请人： Takashi Sato , Soichi Inoue
发明人： Takashi Sato , Soichi Inoue
IPC分类号： G03B27/42 , G01B11/14
CPC分类号： G03F7/706 , G03B27/42 , G03F1/44
摘要： A method of inspecting an exposure system uses a mask pattern including a first and a second mask pattern, the first pattern being formed in a line-and-space of a first pitch, the second pattern being disposed in parallel with the first mask pattern and formed in a line-and-space of a second pitch. The method includes illuminating the mask pattern with inspection light at a first angle with the optical axis of the illumination light from a light source, allowing the first mask pattern to diffract the inspection light to generate first diffraction light, and allowing the second mask pattern to diffract the inspection light to generate second diffraction light. The first angle is to allow the first diffraction light to be diffracted asymmetrically with the optical axis into the projection optical system and the second diffraction light to be diffracted symmetrically with the optical axis into the projection optical system.
摘要翻译：检查曝光系统的方法使用包括第一和第二掩模图案的掩模图案，第一图案形成在第一间距的直线和间隔中，第二图案与第一掩模图案平行设置，形成在第二间距的线和空间中。该方法包括用来自光源的照明光的光轴以第一角度的检查光照亮掩模图案，允许第一掩模图案衍射检查光以产生第一衍射光，并允许第二掩模图案衍射检查光以产生第二衍射光。第一角度是允许第一衍射光被光轴不对称地衍射到投影光学系统中，并且第二衍射光将被光轴对称地衍射到投影光学系统中。

6. 发明授权

US06919153B2 Dose monitoring method and manufacturing method of semiconductor device 失效
标题翻译：半导体器件的剂量监测方法及制造方法
公开(公告)号：US06919153B2
公开(公告)日：2005-07-19
申请号：US10611247
申请日：2003-07-02
申请人： Tadahito Fujisawa , Soichi Inoue , Takashi Sato , Masafumi Asano
发明人： Tadahito Fujisawa , Soichi Inoue , Takashi Sato , Masafumi Asano
IPC分类号： H01L21/027 , G03F7/20 , G03F7/207 , G03C5/00 , G03F9/00
CPC分类号： G03F7/70558
摘要： There is disclosed a dose monitor method comprising illuminating a mask with illumination light, which is disposed in a projection exposure apparatus and in which a dose monitor pattern is formed, passing only a 0th-order diffracted light through a pupil surface of the projection exposure apparatus in diffracted lights of the dose monitor pattern, and transferring a 0th-order diffracted light image of the dose monitor pattern onto a substrate to measure dose, wherein during the illuminating, a center of gravity of the 0th-order diffracted light image passed through the dose monitor pattern on the pupil surface of the projection exposure apparatus is shifted from an optical axis of the projection exposure apparatus.
摘要翻译：公开了一种剂量监测方法，其包括用照射光照射掩模，所述照明光设置在投影曝光装置中，并且其中形成剂量监测器图案，仅使0级衍射光通过投影曝光装置的光瞳表面在剂量监视器图案的衍射光中，并将剂量监视器图案的0级衍射光图像转印到衬底上以测量剂量，其中在照明期间，0级衍射光图像的重心通过投影曝光装置的光瞳表面上的剂量监视器图案从投影曝光装置的光轴移位。

7. 发明授权

US06701512B2 Focus monitoring method, exposure apparatus, and exposure mask 失效
标题翻译：聚焦监测方法，曝光装置和曝光掩模
公开(公告)号：US06701512B2
公开(公告)日：2004-03-02
申请号：US10052527
申请日：2002-01-23
申请人： Takumichi Sutani , Tadahito Fujisawa , Takashi Sato , Takashi Sakamoto , Masafumi Asano , Soichi Inoue
发明人： Takumichi Sutani , Tadahito Fujisawa , Takashi Sato , Takashi Sakamoto , Masafumi Asano , Soichi Inoue
IPC分类号： G06F1750
CPC分类号： G03F7/70641
摘要： According to a focus monitoring method, an exposure mask on which a focus monitor pattern comprising at least two types of pattern groups is formed is prepared. A pattern group A of the at least two pattern groups is illuminated with illumination light while a barycenter of an illumination light source of illumination optics is in an off-axis state. At least a pattern group B of the at least two pattern groups is illuminated with illumination light while the barycenter of the illumination light source is in an on-axis state. A positional deviation between the pattern groups A and B transferred onto a substrate is measured. An effective focus position can be monitored from this positional deviation.
摘要翻译：根据聚焦监视方法，准备形成包括至少两种图案组的聚焦监视器图案的曝光掩模。所述至少两个图案组中的图案组A被照明光照射，而照明光学器件的照明光源的重心处于离轴状态。至少两个图案组中的图案组B至少被照明光照射，同时照明光源的重心处于轴上状态。测量转印到基板上的图案组A和B之间的位置偏差。可以从该位置偏差来监视有效的对焦位置。

8. 发明授权

US06610448B2 Alignment method, overlay deviation inspection method and photomask 有权
标题翻译：对准方法，覆盖偏差检查方法和光掩模
公开(公告)号：US06610448B2
公开(公告)日：2003-08-26
申请号：US09874958
申请日：2001-06-07
申请人： Takashi Sato , Soichi Inoue
发明人： Takashi Sato , Soichi Inoue
IPC分类号： G03F900
CPC分类号： G03F7/70633 , G03F9/7076 , H01L2223/54453
摘要： When an alignment mark and first and second overlay deviation inspection marks as well as a device pattern are successively formed on a wafer using a first photomask and a second photomask, each of the alignment mark and the overlay deviation inspection marks are formed to have a part of the device pattern or marks having sizes and shapes similar to those of the device pattern, whereby these marks receive a deviation error caused by the influence given by the aberration of the light projection optical lens used for performing the pattern transfer and an error in the following processing steps in substantially the same degree as the device pattern, and an amount of the overlay deviation error is measured correctly so as to achieve an alignment of the photomasks in a high accuracy.
摘要翻译：当使用第一光掩模和第二光掩模在晶片上连续地形成对准标记和第一和第二覆盖偏差检查标记以及器件图案时，对准标记和覆盖偏差检查标记中的每一个形成为具有部分的装置图案或具有类似于装置图案的尺寸和形状的标记，由此这些标记接收由用于执行图案转印的光投影光学透镜的像差所产生的影响引起的偏差误差和下面的处理步骤基本上与装置图案相同，并且正确地测量重叠偏差误差的量，以便高精度地实现光掩模的对准。

9. 发明授权

US5707501A Filter manufacturing apparatus 失效
标题翻译：过滤器制造装置
公开(公告)号：US5707501A
公开(公告)日：1998-01-13
申请号：US467600
申请日：1995-06-06
申请人： Soichi Inoue , Tadahito Fujisawa , Shin-ichi Ito , Takashi Sato , Shuichi Tamamushi , Keiji Horioka
发明人： Soichi Inoue , Tadahito Fujisawa , Shin-ichi Ito , Takashi Sato , Shuichi Tamamushi , Keiji Horioka
IPC分类号： G03F7/20 , C23C14/34
CPC分类号： G03F7/70066 , G03F7/70091 , G03F7/701 , G03F7/70125 , G03F7/70241 , G03F7/70333
摘要： A projection exposure apparatus is constituted by a first focusing optical system for focusing light from a mercury-vapor lamp as a light source, a uniforming optical system for uniforming the focused light, a second focusing optical system for focusing the uniformed light and radiating the light onto a reticle mask, and a projection optical system for projecting the light, transmitted through the reticle, onto a wafer. The apparatus is designed to project/expose a predetermined mask pattern, formed on the mask, onto the wafer through the projection optical system. A special stop (i.e., a four-eye filter) is arranged as a secondary source for uniformly illuminating the mask. The special stop serves to set an intensity distribution within the exit plane of the secondary source such that intensities in four regions quadruple-symmetrical about the optical axis of the secondary source and decentered therefrom are higher than intensities in other regions. A translucent pattern is formed as the mask on a light-transmitting substrate. The phase difference between light passing through the translucent film and light passing through the light-transmitting substrate is represented by 180.times.(2n+1).+-.30 (degree) (where n is an integer). In addition, the apparatus includes a halftone mask which allows an amplitude transmittance T of the translucent film and an amplitude transmittance T0 of the light-transmitting substrate to satisfy 0.01.times.T0.ltoreq.T.ltoreq.0.30.times.T0. Furthermore, a projection exposure apparatus is provided, in which a light source and a secondary source is coupled to each other through fibers, and an optical modulator is inserted therebetween so that the spatial distribution of light amounts can be electrically and optically controlled.
摘要翻译：投影曝光装置由用于聚焦来自水银灯的光作为光源的第一聚焦光学系统，用于使聚焦光均匀的均匀的光学系统，用于聚焦均匀的光并照射光的第二聚焦光学系统以及用于将透过该掩模版的光投射到晶片上的投影光学系统。该设备被设计成通过投影光学系统将形成在掩模上的预定掩模图案投影/曝光到晶片上。布置特殊停止（即，四眼滤波器）作为用于均匀照明面罩的次级源。特殊停止用于设定次级源的出射平面内的强度分布，使得围绕次级光源的光轴四倍对称的四个区域的强度高于其他区域的强度。在透光性基板上形成作为掩模的半透明图案。通过透光性膜的光和通过透光性基板的光的相位差由180×（2n + 1）+/- 30（度）（n为整数）表示。此外，该设备包括半透明掩模，其允许透光性膜的振幅透射率T和透光性基板的振幅透过率T0满足0.01×T0≤T≤0.30×T0。此外，提供一种投影曝光装置，其中光源和次级光源通过光纤彼此耦合，并且光学调制器插入其间，使得光量的空间分布可以被电和光学地控制。

10. 发明授权

US5621498A Projection exposure apparatus 失效
标题翻译：投影曝光装置
公开(公告)号：US5621498A
公开(公告)日：1997-04-15
申请号：US411844
申请日：1995-03-28
申请人： Soichi Inoue , Tadahito Fujisawa , Shin-ichi Ito , Takashi Sato , Shuichi Tamamushi , Keiji Horioka
发明人： Soichi Inoue , Tadahito Fujisawa , Shin-ichi Ito , Takashi Sato , Shuichi Tamamushi , Keiji Horioka
IPC分类号： G03F7/20 , G03C5/00
CPC分类号： G03F7/70066 , G03F7/70091 , G03F7/701 , G03F7/70125 , G03F7/70241 , G03F7/70333
摘要： A projection exposure apparatus is constituted by a first focusing optical system for focusing light from a mercury-vapor lamp as a light source, a uniforming optical system for uniforming the focused light, a second focusing optical system for focusing the uniformed light and radiating the light onto a reticle mask, and a projection optical system for projecting the light, transmitted through the reticle, onto a wafer. The apparatus is designed to project/expose a predetermined mask pattern, formed on the mask, onto the wafer through the projection optical system. A special stop (i.e., a four-eye filter) is arranged as a secondary source for uniformly illuminating the mask. The special stop serves to set an intensity distribution within the exit plane of the secondary source such that intensities in four regions quadruple-symmetrical about the optical axis of the secondary source and decentered therefrom are higher than intensities in other regions. A translucent pattern is formed as the mask on a light-transmitting substrate. The phase difference between light passing through the translucent film and light passing through the light-transmitting substrate is represented by 180.times.(2n+1).+-.30 (degrees) (where n is an integer). In addition, the apparatus includes a halftone mask which allows an amplitude transmittance T of the translucent film and an amplitude transmittance T0 of the light-transmitting substrate to satisfy 0.01.times.T0.ltoreq.T.ltoreq.0.30.times.T0. Furthermore a projection exposure apparatus are provided, in which a light source and a secondary source is coupled to each other through fibers, and an optical modulator is inserted therebetween so that the spatial distribution of light amounts can be electrically and optically controlled.
摘要翻译：投影曝光装置由用于聚焦来自水银灯的光作为光源的第一聚焦光学系统，用于使聚焦光均匀的均匀的光学系统，用于聚焦均匀的光并照射光的第二聚焦光学系统以及用于将透过该掩模版的光投射到晶片上的投影光学系统。该设备被设计成通过投影光学系统将形成在掩模上的预定掩模图案投影/曝光到晶片上。布置特殊停止（即，四眼滤波器）作为用于均匀照明面罩的次级源。特殊停止用于设定次级源的出射平面内的强度分布，使得围绕次级光源的光轴四倍对称的四个区域的强度高于其他区域的强度。在透光性基板上形成作为掩模的半透明图案。通过透光性膜的光与通过透光性基板的光的相位差由180×（2n + 1）+/- 30（度）（n为整数）表示。此外，该设备包括半透明掩模，其允许透光性膜的振幅透射率T和透光性基板的振幅透过率T0满足0.01×T0≤T≤0.30×T0。此外，提供了一种投影曝光装置，其中光源和次级光源通过光纤彼此耦合，并且光学调制器插入其间，使得光量的空间分布可以被电和光学地控制。

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