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1. 发明申请

US20120211025A1 PROCESS FOR CLEANING WAFERS 有权
标题翻译：清洗过程
公开(公告)号：US20120211025A1
公开(公告)日：2012-08-23
申请号：US13350007
申请日：2012-01-13
申请人： Soichi KUMON , Takashi SAIO , Shinobu ARATA , Masanori SAITO , Hidehisa NANAI , Yoshinori AKAMATSU
发明人： Soichi KUMON , Takashi SAIO , Shinobu ARATA , Masanori SAITO , Hidehisa NANAI , Yoshinori AKAMATSU
IPC分类号： B08B3/08 , C11D17/00 , C23G1/14 , B08B7/04 , C23G1/02
CPC分类号： H01L21/02057
摘要： A process for cleaning a wafer having an uneven pattern at its surface. The process includes at least the steps of: cleaning the wafer with a cleaning liquid; substituting the cleaning liquid retained in recessed portions of the wafer with a water-repellent liquid chemical after cleaning; and drying the wafer, wherein the cleaning liquid contains 80 mass % or greater of a solvent having a boiling point of 55 to 200° C., and wherein the water-repellent liquid chemical supplied in the substitution step has a temperature of not lower than 40° C. and lower than a boiling point of the water-repellent liquid chemical thereby imparting water repellency at least to surfaces of the recessed portions.
摘要翻译：一种在其表面上清洁具有不均匀图案的晶片的方法。该方法至少包括以下步骤：用清洗液清洗晶片; 在清洁后用拒水液体化学品代替保留在晶片的凹陷部分中的清洁液体; 干燥晶片，其中，所述清洗液含有80质量％以上的沸点为55〜200℃的溶剂，其中，所述取代工序中供给的所述憎水性液体化学物质的温度不低于 40℃以下，并且低于防水液体化学品的沸点，从而至少对凹部的表面赋予防水性。

2. 发明申请

US20120164818A1 Process for Cleaning Wafers 审中-公开
标题翻译：清洗晶圆的工艺
公开(公告)号：US20120164818A1
公开(公告)日：2012-06-28
申请号：US13032308
申请日：2011-02-22
申请人： Soichi KUMON , Takashi SAIO , Shinobu ARATA , Masanori SAITO , Hidehisa NANAI , Yoshinori AKAMATSU
发明人： Soichi KUMON , Takashi SAIO , Shinobu ARATA , Masanori SAITO , Hidehisa NANAI , Yoshinori AKAMATSU
IPC分类号： H01L21/322
CPC分类号： H01L21/02057
摘要： Disclosed is a process for cleaning a wafer having an uneven pattern at its surface. The process includes at least: a step of cleaning the wafer; a step of substituting a cleaning liquid retained in recessed portions of the wafer with a water-repellent liquid chemical after cleaning; and a step of drying the wafer. The process is characterized in that the cleaning liquid has a boiling point of 55 to 200° C., and characterized in that the water-repellent liquid chemical used for the substitution has a temperature of not lower than 40° C. and lower than a boiling point of the water-repellent liquid chemical thereby imparting water repellency at least to surfaces of the recessed portions. With this process, it is possible to provide a cleaning process for improving the cleaning step that tends to induce a pattern collapse.
摘要翻译：公开了一种在其表面上清洁具有不均匀图案的晶片的方法。该方法至少包括：清洁晶片的步骤; 在清洁之后用拒水性液体化学品代替保留在晶片的凹陷部分中的清洁液体的步骤; 以及干燥晶片的步骤。该方法的特征在于清洗液的沸点为55-200℃，其特征在于用于替代的拒水液体化学品的温度不低于40℃，低于所述防水液体化学品的沸点至少赋予所述凹部的表面防水性。通过该处理，可以提供改善倾向于引起图案塌陷的清洁步骤的清洁处理。

3. 发明申请

US20110162680A1 Liquid Chemical for Forming Protecting Film 有权
标题翻译：用于形成保护膜的液体化学品
公开(公告)号：US20110162680A1
公开(公告)日：2011-07-07
申请号：US12912360
申请日：2010-10-26
申请人： Masanori SAITO , Shinobu Arata , Takashi Saio , Soichi Kumon , Hidehisa Nanai , Yoshinori Akamatsu
发明人： Masanori SAITO , Shinobu Arata , Takashi Saio , Soichi Kumon , Hidehisa Nanai , Yoshinori Akamatsu
IPC分类号： B08B3/00 , C07C211/03 , C09D7/12
CPC分类号： H01L21/02068 , C11D1/002 , C11D1/004 , C11D1/04 , C11D1/40 , C11D11/0047 , H01L21/02057 , H01L21/0212 , H01L21/027 , H01L21/306 , H01L21/31127
摘要： Disclosed is a liquid chemical for forming a water-repellent protecting film on a wafer. The liquid chemical is a liquid chemical containing a water-repellent-protecting-film-forming agent for forming the water-repellent protecting film, at the time of cleaning the wafer which has a finely uneven pattern at its surface and contains at least at a part of a surface of a recessed portion of the uneven pattern at least one kind of matter selected from the group consisting of titanium, titanium nitride, tungsten, aluminum, copper, tin, tantalum nitride, ruthenium and silicon, at least on the surface of the recessed portion. The liquid chemical is characterized in that the water-repellent-protecting-film-forming agent is a water-insoluble surfactant. The water-repellent protecting film formed with the liquid chemical is capable of preventing a pattern collapse of the wafer, in a cleaning step.
摘要翻译：公开了一种用于在晶片上形成防水保护膜的液体化学品。液体化学品是含有防水保护膜形成剂的液体化学品，用于形成防水保护膜，在清洁其表面上具有精细不均匀图案的晶片时，至少含有至少一种选自钛，氮化钛，钨，铝，铜，锡，氮化钽，钌和硅的至少一种物质的不平坦图案的凹陷部分的表面的一部分，至少在凹部。液体化学品的特征在于防水保护膜形成剂是水不溶性表面活性剂。在清洁步骤中，用液体化学品形成的防水保护膜能够防止晶片的图案塌陷。

4. 发明申请

US20110132397A1 Silicon Wafer Cleaning Agent 有权
标题翻译：硅晶片清洗剂
公开(公告)号：US20110132397A1
公开(公告)日：2011-06-09
申请号：US12882898
申请日：2010-09-15
申请人： Soichi KUMON , Masanori SAITO , Takashi SAIO , Hidehisa NANAI , Yoshinori AKAMATSU
发明人： Soichi KUMON , Masanori SAITO , Takashi SAIO , Hidehisa NANAI , Yoshinori AKAMATSU
IPC分类号： B08B3/00
CPC分类号： C11D11/0047 , C11D7/30 , C11D7/3209 , C11D11/0064 , C11D11/007 , H01L21/02052
摘要： A silicon wafer cleaning agent includes at least a water-based cleaning liquid, and a water-repellent cleaning liquid for providing water-repellent to an uneven pattern at least at recessed portions during a cleaning process. The water-repellent cleaning liquid is a liquid composed of a water-repellent compound containing a reactive moiety which is chemically bondable to Si in the silicon wafer, and a hydrophobic group, or is a liquid wherein 0.1 mass % or more of the water-repellent compound relative to the total quantity of 100 mass % of the water-repellent cleaning liquid and an organic solvent are mixed and contained therein. A cleaning process wherein a pattern collapse is easily induced can be improved by using the cleaning agent.
摘要翻译：硅晶片清洗剂至少包括一种水基清洗液，以及一种用于在清洁过程中至少在凹陷处向不均匀图案提供防水性的防水清洗液。防水清洗液是由含有与硅晶片中的Si化学结合的反应性部分的疏水性组合物和疏水性基团构成的液体，或其中0.1质量％以上的水溶性化合物，防水化合物相对于防水性清洗液和有机溶剂的总量的100质量％混合并包含在其中。可以通过使用清洁剂来改善容易诱发图案塌陷的清洁方法。

5. 发明申请

US20120272999A1 Liquid Chemical for Forming Water Repellent Protecting Film, and Process for Cleaning Wafers Using the Same 有权
标题翻译：用于防水防水膜的液体化学品，以及使用其的清洗晶片的方法
公开(公告)号：US20120272999A1
公开(公告)日：2012-11-01
申请号：US13458119
申请日：2012-04-27
申请人： Soichi KUMON , Takashi SAIO , Masanori SAITO , Shinobu ARATA
发明人： Soichi KUMON , Takashi SAIO , Masanori SAITO , Shinobu ARATA
IPC分类号： B08B3/08 , C09D5/00
CPC分类号： C09D5/00 , C11D1/004 , C11D1/006 , C11D1/04 , C11D1/342 , C11D1/40 , C11D1/58 , C11D3/2079 , C11D3/28 , C11D3/3427 , C11D3/361 , C11D3/43 , C11D11/0047 , H01L21/02052 , H01L21/02068 , H01L21/02093 , H01L21/02118 , H01L21/02282 , H01L21/321
摘要： A liquid chemical for forming a water repellent protecting film on a wafer having at its surface an uneven pattern and containing at least one kind of element selected from the group consisting of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized by including: a water repellent protecting film forming agent; and water, and characterized in that the water repellent protecting film forming agent is at least one selected from compounds represented by the following general formula [1] and salt compounds thereof and that the concentration of the water relative to the total quantity of a solvent contained in the liquid chemical is not smaller than 50 mass %.
摘要翻译：一种用于在晶片上形成防水保护膜的液体化学品，其表面具有不均匀图案，并且含有选自钛，钨，铝，铜，锡，钽和钌中的至少一种元素。凹凸图案的凹部，防水保护膜至少形成在凹部的表面上。液体化学品的特征在于包括：防水保护膜形成剂; 和水，其特征在于防水保护膜形成剂为选自下列通式[1]表示的化合物及其盐化合物中的至少一种，并且水相对于所含溶剂总量的浓度在液体化学品中不低于50质量％。

6. 发明申请

US20090028203A1 OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：光学半导体器件及其制造方法
公开(公告)号：US20090028203A1
公开(公告)日：2009-01-29
申请号：US12180801
申请日：2008-07-28
申请人： Takeshi SAKASHITA , Masanori SAITO
发明人： Takeshi SAKASHITA , Masanori SAITO
IPC分类号： H01S5/026 , H01L33/00
CPC分类号： H01S5/162 , B82Y20/00 , H01S5/22 , H01S5/34326 , H01S2301/176
摘要： A method for manufacturing a semiconductor device having a compound semiconductor layer that is provided on a substrate and includes a cladding layer of a first conductivity type, an activation layer, a cladding layer of a second conductivity type that is the opposite of the first conductivity type, includes the steps of: forming a diffusion source layer on the compound semiconductor layer; forming a first diffusion region in the compound semiconductor layer by carrying out a first heat treatment, so that the first diffusion region includes a light emitting facet for emitting light from the activation layer; removing the diffusion source layer; forming a first SiN film having a refractive index of 1.9 or higher on the compound semiconductor layer; and turning the first diffusion region into the second diffusion region by carrying out a second heat treatment.
摘要翻译：一种具有化合物半导体层的半导体器件的制造方法，所述半导体器件具有设置在基板上并且包括第一导电类型的包覆层，活化层，与第一导电类型相反的第二导电类型的包覆层包括以下步骤：在化合物半导体层上形成扩散源层; 通过进行第一热处理在所述化合物半导体层中形成第一扩散区域，使得所述第一扩散区域包括用于从所述活化层发射光的发光面; 去除扩散源层; 在化合物半导体层上形成折射率为1.9以上的第一SiN膜; 以及通过进行第二热处理将所述第一扩散区域转入所述第二扩散区域。

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