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1. 发明申请

US20110253672A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20110253672A1
公开(公告)日：2011-10-20
申请号：US12855206
申请日：2010-08-12
申请人： Masami Kamibayashi , Masahito Mori , Hiroyuki Kobayashi , Keizo Suzuki , Naoyuki Kofuji
发明人： Masami Kamibayashi , Masahito Mori , Hiroyuki Kobayashi , Keizo Suzuki , Naoyuki Kofuji
IPC分类号： C23F1/12 , H01L21/306 , C23F1/08
CPC分类号： H01J37/32678 , H01J37/32091 , H01L21/32136
摘要： The present invention is intended to improve the uniformity in a distribution function of incident ion energy inside a wafer surface, and realize uniform plasma processing (etching or the like) inside the wafer surface. In a plasma processing apparatus, a bias application portion of a placement electrode on which a wafer is placed is divided into an inner electrode and an outer electrode at positions near the center of the wafer and the edge thereof. Each of a first bias power and a second bias power to be used to accelerate ions incident on the wafer is bifurcated, and the resultant bias powers are fed to the inner electrode and outer electrode using a power distributor by adjusting the power ratio.
摘要翻译：本发明旨在提高晶片表面内的入射离子能的分布函数的均匀性，并且在晶片表面内实现均匀的等离子体处理（蚀刻等）。在等离子体处理装置中，放置晶片的放置电极的偏置施加部分在晶片的中心和边缘附近的位置被分成内电极和外电极。用于加速入射在晶片上的离子的第一偏置功率和第二偏置功率分别被分叉，并且通过调节功率比，使用功率分配器将所得到的偏置功率馈送到内部电极和外部电极。

2. 发明授权

US08129283B2 Plasma processing method and plasma processing apparatus 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US08129283B2
公开(公告)日：2012-03-06
申请号：US12068889
申请日：2008-02-13
申请人： Masahito Mori , Naoyuki Kofuji , Naoshi Itabashi
发明人： Masahito Mori , Naoyuki Kofuji , Naoshi Itabashi
IPC分类号： H01L21/302
CPC分类号： H01J37/32798 , C23F4/00 , H01J37/32009 , H01J37/32183 , H01J37/32706 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32137 , H01L29/517
摘要： The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.
摘要翻译：本发明提供一种用于蚀刻具有高精度步骤的多层膜结构的等离子体处理装置和干蚀刻方法。等离子体处理装置包括真空反应器107，放置在真空反应器的处理室内的下部电极113，并且具有要在其上表面上安装的晶片112的偏压供给单元118和120，用于向向下电极113形成偏置电位，用于将反应性气体供给到处理室中的气体供给装置111，用于在处理室中提供用于产生等离子体的磁场的电场供给装置101至103，以及控制单元127 用于控制通过高频功率入射在晶片112上的等离子体中的离子能量的分布。

3. 发明申请

US20080190893A1 Plasma processing method and plasma processing apparatus 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20080190893A1
公开(公告)日：2008-08-14
申请号：US12068889
申请日：2008-02-13
申请人： Masahito Mori , Naoyuki Kofuji , Naoshi Itabashi
发明人： Masahito Mori , Naoyuki Kofuji , Naoshi Itabashi
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： H01J37/32798 , C23F4/00 , H01J37/32009 , H01J37/32183 , H01J37/32706 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32137 , H01L29/517
摘要： The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.
摘要翻译：本发明提供一种用于蚀刻具有高精度步骤的多层膜结构的等离子体处理装置和干蚀刻方法。等离子体处理装置包括真空反应器107，放置在真空反应器的处理室内的下部电极113，并且具有要在其上表面上安装的晶片112的偏压供给单元118和120，用于向向下电极113形成偏置电位，用于将反应性气体供给到处理室中的气体供给装置111，用于在处理室中提供用于产生等离子体的磁场的电场供给装置101至103，以及控制单元127 用于控制通过高频功率入射在晶片112上的等离子体中的离子能量的分布。

4. 发明授权

US08546266B2 Plasma processing method and plasma processing apparatus 有权
公开(公告)号：US08546266B2
公开(公告)日：2013-10-01
申请号：US13212909
申请日：2011-08-18
申请人： Masahito Mori , Naoyuki Kofuji , Naoshi Itabashi
发明人： Masahito Mori , Naoyuki Kofuji , Naoshi Itabashi
IPC分类号： H01L21/302
CPC分类号： H01J37/32798 , C23F4/00 , H01J37/32009 , H01J37/32183 , H01J37/32706 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32137 , H01L29/517
摘要： The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.

5. 发明申请

US20070232067A1 Semiconductor Fabrication Method and Etching System 审中-公开
标题翻译：半导体制造方法和蚀刻系统
公开(公告)号：US20070232067A1
公开(公告)日：2007-10-04
申请号：US11692241
申请日：2007-03-28
申请人： Kousa Hirota , Masahito Mori , Naoyuki Kofuji , Naoshi Itabashi , Toshio Masuda
发明人： Kousa Hirota , Masahito Mori , Naoyuki Kofuji , Naoshi Itabashi , Toshio Masuda
IPC分类号： H01L21/302
CPC分类号： H01L21/32139 , H01L21/28123
摘要： The invention provides a semiconductor fabrication method comprising a deposition step for depositing a laminated film on a semiconductor substrate having a region in which a mask pattern is formed sparsely and a region in which the mask pattern is formed densely, a lithography step s1 for forming a mask pattern, a cleaning step S11C for removing deposits in the apparatus, a trimming step S3 for trimming the mask pattern, and dry etching steps S4 and S5 for transferring the mask pattern on the laminated film, wherein a seasoning step S11S followed by a deposition step S2 is introduced either before or after the trimming step S3.
摘要翻译：本发明提供了一种半导体制造方法，包括：沉积步骤，用于在具有稀疏形成掩模图案的区域的半导体衬底上沉积层压膜，以及密集形成掩模图案的区域;用于形成的光刻步骤s1 掩模图案，用于去除设备中的沉积物的清洁步骤S111，用于修整掩模图案的修整步骤S3以及用于将掩模图案转印到层压膜上的干蚀刻步骤S 4和S 5，其中调味在修整步骤S 3之前或之后引入步骤S11A，然后进行沉积步骤S2。

6. 发明申请

US20070056929A1 Plasma etching apparatus and plasma etching method 失效
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20070056929A1
公开(公告)日：2007-03-15
申请号：US11362867
申请日：2006-02-28
申请人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
发明人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
IPC分类号： C23F1/00 , G01L21/30 , H01L21/306 , H01L21/302 , G01R31/00
CPC分类号： H01L21/67069 , H01J37/32449 , H01J37/32935 , H01L21/32137 , H01L21/67248 , H01L21/67253
摘要： A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.
摘要翻译：一种等离子体蚀刻装置，包括：处理室，其中试样经受等离子体处理;试样保持器，用于保持试样;试样架包括用于控制试样至少2个位置的温度的温度控制器，至少两个气体供应用于提供处理气体的源，用于将处理气体引入处理室的至少两个气体入口，用于独立地控制从至少两个气体入口引入的处理气体的组成或流速的调节器和由样品架中的至少两个温度控制器和用于将电磁波发送到处理室中的电磁波供给单元，其中从气体入口引入的处理气体的组成或流速以及用温度控制器控制的温度样品架独立控制。

7. 发明授权

US07396771B2 Plasma etching apparatus and plasma etching method 失效
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US07396771B2
公开(公告)日：2008-07-08
申请号：US11362867
申请日：2006-02-28
申请人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
发明人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/67069 , H01J37/32449 , H01J37/32935 , H01L21/32137 , H01L21/67248 , H01L21/67253
摘要： A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.
摘要翻译：一种等离子体蚀刻装置，包括：处理室，其中试样经受等离子体处理;试样保持器，用于保持试样;试样架包括用于控制试样至少2个位置的温度的温度控制器，至少两个气体供应用于提供处理气体的源，用于将处理气体引入处理室的至少两个气体入口，用于独立地控制从至少两个气体入口引入的处理气体的组成或流速的调节器和由样品架中的至少两个温度控制器和用于将电磁波发送到处理室中的电磁波供给单元，其中从气体入口引入的处理气体的组成或流速以及用温度控制器控制的温度样品架独立控制。

8. 发明申请

US20060096706A1 Dry etching apparatus and a method of manufacturing a semiconductor device 审中-公开
标题翻译：干式蚀刻装置及半导体装置的制造方法
公开(公告)号：US20060096706A1
公开(公告)日：2006-05-11
申请号：US11315316
申请日：2005-12-23
申请人： Naoyuki Kofuji , Masahito Mori , Ken'etsu Yokogawa , Naoshi Itabashi , Kazunori Tsujimoto , Shin'ichi Tachi
发明人： Naoyuki Kofuji , Masahito Mori , Ken'etsu Yokogawa , Naoshi Itabashi , Kazunori Tsujimoto , Shin'ichi Tachi
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/67069 , H01J37/32082 , H01L21/32136 , H01L21/32137
摘要： The processing with a low gate rate of destruction and high anisotropy is achieved in dry etching. Plasma is generated by ECR resonance of electromagnetic wave which arose by supplying Ultra High Frequency electric power in microstripline 4 arranged on the atmosphere side of a dielectric 2, which separates a vacuum inside and an outside and magnetic field. A conducting layer is etched by this plasma, which is stable and uniform plasma.
摘要翻译：在干蚀刻中实现了具有低栅极破坏率和高各向异性的处理。等离子体是通过电磁波的ECR共振产生的，其通过在布置在电介质2的大气层上的微阵列4中提供超高频电力而产生，该电介质2将真空内部和外部以及磁场分离。通过该等离子体蚀刻导电层，其是稳定且均匀的等离子体。

9. 发明授权

US5891252A Plasma processing apparatus 失效
公开(公告)号：US5891252A
公开(公告)日：1999-04-06
申请号：US766818
申请日：1996-12-13
申请人： Ken'etsu Yokogawa , Tetsuo Ono , Kazunori Tsujimoto , Naoshi Itabashi , Masahito Mori , Shinichi Tachi , Keizo Suzuki
发明人： Ken'etsu Yokogawa , Tetsuo Ono , Kazunori Tsujimoto , Naoshi Itabashi , Masahito Mori , Shinichi Tachi , Keizo Suzuki
IPC分类号： C23C16/00 , H01J37/32
CPC分类号： H01J37/3222 , H01J37/32082 , H01J37/32678 , H01J2237/3341
摘要： A plasma processing apparatus in which power consumption is reduced, which can generate uniform plasma in a large range and in which minute processing in high etching selectivity and in high aspect ratio is enabled is disclosed. High density plasma is generated in a vacuum vessel housing a processed sample utilizing an electron cyclotron resonance phenomenon caused by an electromagnetic wave in an ultra-high frequency band and a magnetic field and the surface of the processed sample is etched using this plasma. An electromagnetic wave in an ultra-high frequency band for generating plasma is radiated from a planar conductive plate consisting of graphite or silicon which is arranged opposite to the surface of the processed sample into space inside the vacuum vessel. High density plasma in the low degree of dissociation can be generated by using an electromagnetic wave in an ultra-high frequency band and as a result, the controllability of etching reaction can be enhanced. Further, a radical effective in etching can be increased by reaction between the surface of a planar conductive plate for radiating an electromagnetic wave and plasma.

10. 发明授权

US6033481A Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US6033481A
公开(公告)日：2000-03-07
申请号：US225971
申请日：1999-01-06
申请人： Ken'etsu Yokogawa , Tetsuo Ono , Kazunori Tsujimoto , Naoshi Itabashi , Masahito Mori , Shinichi Tachi , Keizo Suzuki
发明人： Ken'etsu Yokogawa , Tetsuo Ono , Kazunori Tsujimoto , Naoshi Itabashi , Masahito Mori , Shinichi Tachi , Keizo Suzuki
IPC分类号： C23C16/00 , H01J37/32
CPC分类号： H01J37/3222 , H01J37/32082 , H01J37/32678 , H01J2237/3341
摘要： A plasma processing apparatus in which power consumption is reduced, which can generate uniform plasma in a large range and in which minute processing in high etching selectivity and in high aspect ratio is enabled is disclosed. High density plasma is generated in a vacuum vessel housing a processed sample utilizing an electron cyclotron resonance phenomenon caused by an electromagnetic wave in an ultra-high frequency band and a magnetic field and the surface of the processed sample is etched using this plasma. An electromagnetic wave in an ultra-high frequency band for generating plasma is radiated from a planar conductive plate consisting of graphite or silicon which is arranged opposite to the surface of the processed sample into space inside the vacuum vessel. High density plasma in the low degree of dissociation can be generated by using an electromagnetic wave in an ultra-high frequency band and as a result, the controllability of etching reaction can be enhanced. Further, a radical effective in etching can be increased by reaction between the surface of a planar conductive plate for radiating an electromagnetic wave and plasma.
摘要翻译：公开了能够在大范围内产生均匀的等离子体并能够实现高蚀刻选择性和高纵横比的微小加工的功耗降低的等离子体处理装置。利用由超高频带和磁场中的电磁波引起的电子回旋共振现象，在容纳加工样品的真空容器中产生高密度等离子体，并且使用该等离子体蚀刻处理样品的表面。用于产生等离子体的超高频带中的电磁波从由石墨或硅组成的平面导电板辐射，该导电板与被处理样品的表面相对地设置在真空容器内部的空间中。通过在超高频带中使用电磁波可以产生低解离度的高密度等离子体，结果可以提高蚀刻反应的可控性。此外，通过用于辐射电磁波的平面导电板的表面与等离子体之间的反应可以增加蚀刻中有效的自由基。

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