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1. 发明申请

US20150151344A1 METHOD FOR MANUFACTURING CURVED HOLLOW PIPE 有权
公开(公告)号：US20150151344A1
公开(公告)日：2015-06-04
申请号：US14374293
申请日：2012-01-26
申请人： Masaki Ueno , Yuji Suenaga
发明人： Masaki Ueno , Yuji Suenaga
IPC分类号： B21C37/15 , B21K7/12 , B21D5/00
CPC分类号： B21D22/025 , B21C37/15 , B21D5/00 , B21D5/015 , B21D53/88 , B21K7/12
摘要： [Problem] A method for manufacturing a bent hollow pipe is provided, in which even when a three-dimensionally bent pipe is formed, a gap, an uneven thickness, and the like would not occur at contact portions at the ends of both of the flange portions when press work is finished, and thus a pipe having the high quality contact portions can be formed.[Solution] In a method for manufacturing a bent hollow pipe, a material W, which is to be processed and which is a flat plate extending a first plane formed by a first direction and a second direction perpendicular to the first direction, is pressed in a stepwise manner using a plurality of forming dies from a third direction perpendicular to the first plane, so that two sides of a second plane formed by the second direction and the third direction of the material W are brought into contact with each other, and the bent hollow pipe is made to be bent and extend in a three dimensional manner that is bent in the first plane and in the second plane. The method includes a step in which a push out portion 13 is formed that is pushed out onto the material W in the third direction and that is bent and extends within a third plane formed by the first direction and the third direction in a press work, and extension portions 15 are formed to extend away from each other at both sides which sandwich the push out portion 13 of the material W, and flange portions 16 are formed that are bent, in a direction opposite to a push out direction of the push out portion 13, at ends of the extension portions 15, a step in which while bending is maintained between the extension portions 15 and the flange portions 16, a bent portions 17 between the push out portion 13 and the extension portions 15 are bent in the opposite directions, so that the both of the flange portions 16 are formed in a direction in which the both of the flange portions 16 face each other, a step in which the both of the flange portions 16 of a three-dimensionally bent portion P that is bent in the first plane and in the second plane are bent and brought closer to each other as compared with both of the flange portions 16 in a portion other than the three-dimensionally bent portion P, and a step of bringing ends of the flange portions 16 into contact with each other.

2. 发明授权

US09421594B2 Method for manufacturing curved hollow pipe 有权
公开(公告)号：US09421594B2
公开(公告)日：2016-08-23
申请号：US14374293
申请日：2012-01-26
申请人： Masaki Ueno , Yuji Suenaga
发明人： Masaki Ueno , Yuji Suenaga
IPC分类号： B21C37/15 , B21D5/01 , B21D5/00 , B21K7/12 , B21D53/88
CPC分类号： B21D22/025 , B21C37/15 , B21D5/00 , B21D5/015 , B21D53/88 , B21K7/12
摘要： [Problem] A method for manufacturing a bent hollow pipe is provided, in which even when a three-dimensionally bent pipe is formed, a gap, an uneven thickness, and the like would not occur at contact portions at the ends of both of the flange portions when press work is finished, and thus a pipe having the high quality contact portions can be formed.[Solution] In a method for manufacturing a bent hollow pipe, a material W, which is to be processed and which is a flat plate extending a first plane formed by a first direction and a second direction perpendicular to the first direction, is pressed in a stepwise manner using a plurality of forming dies from a third direction perpendicular to the first plane, so that two sides of a second plane formed by the second direction and the third direction of the material W are brought into contact with each other, and the bent hollow pipe is made to be bent and extend in a three dimensional manner that is bent in the first plane and in the second plane. The method includes a step in which a push out portion 13 is formed that is pushed out onto the material W in the third direction and that is bent and extends within a third plane formed by the first direction and the third direction in a press work, and extension portions 15 are formed to extend away from each other at both sides which sandwich the push out portion 13 of the material W, and flange portions 16 are formed that are bent, in a direction opposite to a push out direction of the push out portion 13, at ends of the extension portions 15, a step in which while bending is maintained between the extension portions 15 and the flange portions 16, a bent portions 17 between the push out portion 13 and the extension portions 15 are bent in the opposite directions, so that the both of the flange portions 16 are formed in a direction in which the both of the flange portions 16 face each other, a step in which the both of the flange portions 16 of a three-dimensionally bent portion P that is bent in the first plane and in the second plane are bent and brought closer to each other as compared with both of the flange portions 16 in a portion other than the three-dimensionally bent portion P, and a step of bringing ends of the flange portions 16 into contact with each other.

3. 发明授权

US08927962B2 Group III nitride semiconductor optical device 有权
标题翻译： III族氮化物半导体光学器件
公开(公告)号：US08927962B2
公开(公告)日：2015-01-06
申请号：US13055690
申请日：2010-02-26
申请人： Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Katsushi Akita , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
发明人： Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Katsushi Akita , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
IPC分类号： H01L29/66 , H01L33/32 , H01S5/343 , B82Y20/00 , H01L33/16 , H01S5/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01L33/325 , H01S5/3202
摘要： A group III nitride semiconductor optical device 11a has a group III nitride semiconductor substrate 13 having a main surface 13a forming a finite angle with a reference plane Sc orthogonal to a reference axis Cx extending in a c-axis direction of the group III nitride semiconductor and an active layer 17 of a quantum-well structure, disposed on the main surface 13a of the group III nitride semiconductor substrate 13, including a well layer 28 made of a group III nitride semiconductor and a plurality of barrier layers 29 made of a group III nitride semiconductor. The main surface 13a exhibits semipolarity. The active layer 17 has an oxygen content of at least 1×1017 cm−3 but not exceeding 8×1017 cm−3. The plurality of barrier layers 29 contain an n-type impurity other than oxygen by at least 1×1017 cm−3 but not exceeding 1×1019 cm−3 in an upper near-interface area 29u in contact with a lower interface 28Sd of the well layer 28 on the group III nitride semiconductor substrate side.
摘要翻译： III族氮化物半导体光学元件11a具有III族氮化物半导体衬底13，该III族氮化物半导体衬底13具有与在III族氮化物半导体的c轴方向上延伸的参考轴Cx正交的参考平面Sc形成有限角度的主表面13a; 设置在III族氮化物半导体衬底13的主表面13a上的量子阱结构的有源层17，包括由III族氮化物半导体制成的阱层28和由III族组成的多个势垒层29 氮化物半导体。主表面13a具有半极性。活性层17的氧含量至少为1×1017cm-3，但不超过8×1017cm-3。多个势垒层29在上接近界面区域29u中含有除氧之外的至少1×1017cm-3但不超过1×1019cm-3的n型杂质，该上接近界面区29u与下界面28Sd接触 III族氮化物半导体衬底侧的阱层28。

4. 发明申请

US20140110758A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20140110758A1
公开(公告)日：2014-04-24
申请号：US14124600
申请日：2011-06-08
申请人： Yu Saitoh , Masaya Okada , Masaki Ueno , Makoto Kiyama
发明人： Yu Saitoh , Masaya Okada , Masaki Ueno , Makoto Kiyama
IPC分类号： H01L29/778 , H01L29/66
CPC分类号： H01L29/66431 , H01L29/0623 , H01L29/0692 , H01L29/2003 , H01L29/4236 , H01L29/42364 , H01L29/66462 , H01L29/7787 , H01L29/7788 , H01L29/7789 , H01L29/8128
摘要： The semiconductor device is formed in the form of a GaN-based stacked layer including an n-type drift layer 4, a p-type layer 6, and an n-type top layer 8. The semiconductor device includes a regrown layer 27 formed so as to cover a portion of the GaN-based stacked layer that is exposed to an opening 28, the regrown layer 27 including a channel. The channel is two-dimensional electron gas formed at an interface between the electron drift layer and the electron supply layer. When the electron drift layer 22 is assumed to have a thickness of d, the p-type layer 6 has a thickness in the range of d to 10d, and a graded p-type impurity layer 7 whose concentration decreases from a p-type impurity concentration in the p-type layer is formed so as to extend from a (p-type layer/n-type top layer) interface to the inside of the n-type top layer.
摘要翻译：半导体器件形成为包括n型漂移层4，p型层6和n型顶层8的GaN基叠层的形式。半导体器件包括如下形成的再生长层27 为了覆盖暴露于开口28的GaN基叠层的一部分，再生长层27包括沟道。通道是在电子漂移层和电子供给层之间的界面处形成的二维电子气。当假定电子漂移层22的厚度为d时，p型层6的厚度在d至10d的范围内，并且p型杂质层7的浓度从p型杂质降低从（p型层/ n型顶层）界面向n型顶层的内部形成p型层的浓度。

5. 发明申请

US20140008886A1 ARM COMPONENT FOR VEHICLES AND ITS MANUFACTURING METHOD 有权
标题翻译：车辆部件及其制造方法
公开(公告)号：US20140008886A1
公开(公告)日：2014-01-09
申请号：US14004854
申请日：2012-03-14
申请人： Masaki Ueno , Hitoshi Kunihara
发明人： Masaki Ueno , Hitoshi Kunihara
IPC分类号： B60G7/00
CPC分类号： B60G7/001 , B60G2206/11 , B60G2206/722 , F16C7/08 , F16C2326/05 , Y10T29/49622
摘要： Disclosed herein is a suspension arm component for vehicles with sufficient strength or rigidity to withstand repetitive compressive and tensile forces, and a method for manufacturing such a component by pressing or hemming process alone, without recourse to any welding process, forming quickly and simply, a process with advantages in terms of material yield and cost. The suspension arm component for vehicles includes first flange pieces as well as second flange pieces, and a pair of half members, each having a hat-like shaped cross-section perpendicular to its axis, are joined together to protrude the first flange part and the second flange part from an expanded part, where both the first flange part and the second flange part extend linearly along the axis of the main body part. The main body part presents a rectangular shape in its side view.
摘要翻译：本文公开了一种用于具有足够的强度或刚度以抵抗重复的压缩和拉伸力的车辆的悬架臂部件，以及用于通过单独的压制或折边加工来制造这种部件的方法，而不需要任何焊接工艺，快速且简单地形成在材料产量和成本方面具有优势。用于车辆的悬挂臂部件包括第一凸缘部件和第二凸缘部件，并且每个具有与其轴线垂直的帽状截面的一对半部件接合在一起以使第一凸缘部分和第二凸缘部分从膨胀部分开始，其中第一凸缘部分和第二凸缘部分都沿着主体部分的轴线线性地延伸。主体部分的侧视图呈现矩形。

6. 发明申请

US20130168739A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130168739A1
公开(公告)日：2013-07-04
申请号：US13824248
申请日：2011-07-06
申请人： Makoto Kiyama , Yu Saitoh , Masaya Okada , Masaki Ueno , Seiji Yaegashi , Kazutaka Inoue , Mitsunori Yokoyama
发明人： Makoto Kiyama , Yu Saitoh , Masaya Okada , Masaki Ueno , Seiji Yaegashi , Kazutaka Inoue , Mitsunori Yokoyama
IPC分类号： H01L29/778 , H01L29/66
CPC分类号： H01L29/778 , H01L29/2003 , H01L29/4236 , H01L29/66431 , H01L29/66462 , H01L29/7788 , H01L29/7789
摘要： A vertical semiconductor device in which pinch-off characteristics and breakdown voltage characteristics can be stably improved by fixing the electric potential of a p-type GaN barrier layer with certainty is provided. The semiconductor device includes a GaN-based stacked layer having an opening, a regrown layer including a channel located so as to cover a wall surface of the opening, an n+-type source layer that is in ohmic contact with the source electrode, a p-type GaN barrier layer, and a p+-type GaN-based supplementary layer located between the p-type GaN barrier layer and the n+-type source layer. The p+-type GaN-based supplementary layer and the n+-type source layer form a tunnel junction to fix the electric potential of the p-type GaN barrier layer at a source potential.
摘要翻译：提供了通过确定地固定p型GaN势垒层的电位可以稳定地提高夹断特性和击穿电压特性的垂直半导体器件。半导体器件包括具有开口的GaN基层叠层，包含覆盖开口壁面的沟道的再生长层，与源电极欧姆接触的n +型源极，p 位于p型GaN势垒层和n +型源极层之间的p +型GaN基辅助层。 p +型GaN基辅助层和n +型源极层形成隧道结，以将p型GaN阻挡层的电位固定在源极电位。

7. 发明授权

US08420419B2 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 有权
标题翻译： III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法
公开(公告)号：US08420419B2
公开(公告)日：2013-04-16
申请号：US13404310
申请日：2012-02-24
申请人： Shimpei Takagi , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
发明人： Shimpei Takagi , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
IPC分类号： H01L21/00
CPC分类号： H01S5/1085 , B82Y20/00 , H01L33/0045 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/0208 , H01S5/2201 , H01S5/3202 , H01S5/3404 , H01S5/34333
摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate product, where the substrate product has a laser structure, the laser structure includes a semiconductor region and a substrate of a hexagonal III-nitride semiconductor, the substrate has a semipolar primary surface, and the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product to form a scribed mark, the scribed mark extending in a direction of an a-axis of the hexagonal III-nitride semiconductor; and after forming the scribed mark, carrying out breakup of the substrate product by press against a second region of the substrate product while supporting a first region of the substrate product but not supporting the second region thereof, to form another substrate product and a laser bar.
摘要翻译：一种制造III族氮化物半导体激光器件的方法包括：制备衬底产品，其中衬底产品具有激光结构，激光结构包括半导体区域和六边形III族氮化物半导体的衬底，该衬底具有半极性主表面，并且半导体区域形成在半极性主表面上; 划定基板产品的第一表面以形成划刻标记，所述划线标记沿所述六边形III族氮化物半导体的a轴方向延伸; 并且在形成划线之后，在支撑基板产品的第一区域但不支撑其第二区域的同时通过压靠基板产品的第二区域将基板产品分解，形成另一基板产品和激光条。

8. 发明申请

US20130003769A1 GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER DEVICE 有权
标题翻译：基于氮化镓的半导体激光器件，以及用于制造基于氮化镓的半导体激光器件的方法
公开(公告)号：US20130003769A1
公开(公告)日：2013-01-03
申请号：US13431043
申请日：2012-03-27
申请人： Tetsuya Kumano , Masaki Ueno , Takashi Kyono , Yohei Enya , Katsunori Yanashima , Kunihiko Tasai , Hiroshi Nakajima
发明人： Tetsuya Kumano , Masaki Ueno , Takashi Kyono , Yohei Enya , Katsunori Yanashima , Kunihiko Tasai , Hiroshi Nakajima
IPC分类号： H01S5/34 , H01L21/18
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/3063 , H01S5/3202 , H01S2304/04
摘要： A gallium nitride-based semiconductor laser device with reduced threshold current. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer, an n-side light guide layer, an active layer, a p-side light guide layer, and a p-type cladding layer. The n-side light guide layer and the p-side light guide layer both contain indium. Each of indium compositions of the n-side light guide layer and the p-side light guide layer is not less than 2% and not more than 6%. A film thickness of the n-type cladding layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the n-type cladding layer and a film thickness of the p-type cladding layer 23.
摘要翻译：具有降低的阈值电流的氮化镓基半导体激光器件。氮化镓系半导体激光装置具备n型包覆层，n侧导光层，有源层，p侧导光层和p型覆层。 n侧导光层和p侧导光层均含有铟。 n侧导光层和p侧导光层的铟成分中的每一种不小于2％且不大于6％。 n型包覆层的膜厚在n层包层的膜厚的合计的65％以上且85％以下，p型包层的膜厚第23层。

9. 发明申请

US20120299010A1 GROUP-III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR DEVICE 失效
标题翻译： III族氮化物半导体器件，外延衬底以及制备III族氮化物半导体器件的方法
公开(公告)号：US20120299010A1
公开(公告)日：2012-11-29
申请号：US13484776
申请日：2012-05-31
申请人： Yohei ENYA , Yusuke Yoshizumi , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
发明人： Yohei ENYA , Yusuke Yoshizumi , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
IPC分类号： H01L33/32
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/3202 , H01S5/34333 , H01S2302/00
摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle with respect to a c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes GaN-based semiconductor layers. The reference axis is inclined at a first angle from the c-axis of the III-nitride semiconductor toward a first crystal axis, either the m-axis or a-axis. The reference axis is inclined at a second angle from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.
摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，其具有沿与第一参考平面垂直的第一参考平面延伸的第一表面，所述第一参考平面垂直于相对于III族氮化物的c轴以预定角度倾斜的参考轴半导体和设置在支撑基体的主表面上的外延半导体区域。外延半导体区域包括GaN基半导体层。基准轴从III族氮化物半导体的c轴朝向第一晶轴倾斜第一角度，即m轴或a轴。基准轴从III族氮化物半导体的c轴向第二晶轴倾斜第二角度，m轴和a轴的另一方倾斜。外延半导体区域的最外表面的形态包括多个凹坑。坑的坑密度不大于5×104cm-2。

10. 发明授权

US08174035B2 Nitride-based semiconductor light emitting device 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US08174035B2
公开(公告)日：2012-05-08
申请号：US12836090
申请日：2010-07-14
申请人： Takamichi Sumitomo , Masaki Ueno , Takashi Kyono , Yohei Enya , Yusuke Yoshizumi
发明人： Takamichi Sumitomo , Masaki Ueno , Takashi Kyono , Yohei Enya , Yusuke Yoshizumi
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , B82Y20/00 , H01L33/0075 , H01L33/14 , H01L33/32 , H01L33/40 , H01S5/0421 , H01S5/3202 , H01S5/343 , H01S5/34333
摘要： An object is to provide a nitride-based semiconductor light emitting device capable of preventing a Schottky barrier from being formed at an interface between a contact layer and an electrode. LD 1 is provided as a nitride-based semiconductor light emitting device provided with a GaN substrate 3, a hexagonal GaN-based semiconductor region 5 provided on a primary surface S1 of the GaN substrate 3 and including a light emitting layer 11, and a p-electrode 21 provided on the GaN-based semiconductor region 5 and comprised of metal. The GaN-based semiconductor region 5 includes a contact layer 17 involving strain, the contact layer 17 is in contact with the p-electrode, the primary surface S1 extends along a reference plane S5 inclined at a predetermined inclination angle θ from a plane perpendicular to the c-axis direction of the GaN substrate 3, and the inclination angle θ is either in the range of more than 40° and less than 90° or in the range of not less than 150° and less than 180°. The GaN-based semiconductor region 5 is lattice-matched with the GaN substrate 3.
摘要翻译：目的是提供一种能够防止在接触层和电极之间的界面处形成肖特基势垒的氮化物系半导体发光元件。提供LD1作为氮化物系半导体发光器件，其具备设置在GaN衬底3的主表面S1上且包括发光层11的GaN衬底3，六方晶系GaN基半导体区域5和p - 电极21，其设置在GaN基半导体区域5上并且由金属构成。 GaN基半导体区域5包括涉及应变的接触层17，接触层17与p电极接触，主表面S1沿着以预定倾斜角度倾斜的参考平面S5延伸; 从垂直于GaN衬底3的c轴方向的平面以及倾斜角度; 在大于40°且小于90°的范围内或在不小于150°且小于180°的范围内。 GaN基半导体区域5与GaN衬底3晶格匹配。

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