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1. 发明授权

US4632806A Copper alloy having high resistance to oxidation for use in leads on semiconductor devices 失效
标题翻译：具有高抗氧化性的铜合金用于半导体器件的引线
公开(公告)号：US4632806A
公开(公告)日：1986-12-30
申请号：US682374
申请日：1984-12-17
申请人： Masaki Morikawa , Hideaki Yoshida , Kunio Kishida
发明人： Masaki Morikawa , Hideaki Yoshida , Kunio Kishida
IPC分类号： C22C9/00 , B32B15/01 , C22C9/04 , C22C9/05 , H01L23/50 , C22C9/02 , C22C9/06
CPC分类号： C22C9/04 , B32B15/01 , C22C9/05 , H01L2924/0002 , Y10S428/929 , Y10T428/12903
摘要： A Cu alloy having high resistance to oxidation for use in leads on semiconductor devices is disclosed. The alloy consists essentially of 7-15 wt % Mn, 10-30 wt % Zn, 0.2-10 wt % Ni, 0.1-3 wt % Al, with the balance being Cu and incidental impurities. Also disclosed is a Cu alloy clad material wherein the substrate is made of Cu or Cu alloy having high electrical conductivity and good heat dissipation, and the cladding or partial cladding is composed of the Cu alloy having the composition specified above.
摘要翻译：公开了一种在半导体器件引线中使用的具有高抗氧化性的Cu合金。该合金基本上由7-15重量％的Mn，10-30重量％的Zn，0.2-10重量％的Ni，0.1-3重量％的Al组成，余量为Cu和杂质。还公开了一种Cu合金包覆材料，其中基体由具有高导电性和良好散热性的Cu或Cu合金制成，并且包层或部分包层由具有上述组成的Cu合金构成。

2. 发明授权

US4525434A Copper alloy having high resistance to oxidation for use in leads on semiconductor devices and clad material containing said alloy 失效
标题翻译：具有高抗氧化性的铜合金，用于半导体器件引线和包含所述合金的复合材料
公开(公告)号：US4525434A
公开(公告)日：1985-06-25
申请号：US529593
申请日：1983-09-06
申请人： Masaki Morikawa , Hideaki Yoshida , Kunio Kishida
发明人： Masaki Morikawa , Hideaki Yoshida , Kunio Kishida
IPC分类号： C22C9/00 , B32B15/01 , C22C9/04 , C22C9/05 , H01L23/50 , C23C5/00
CPC分类号： C22C9/04 , B32B15/01 , C22C9/05 , H01L2924/0002 , Y10S428/929 , Y10T428/12903
摘要： A Cu alloy having high resistance to oxidation for use in leads on semiconductor devices is disclosed. The alloy consists essentially of 7-15 wt % Mn, 10-30 wt % Zn, 0.2-10 wt % Ni, 0.1-3 wt % Al, with the balance being Cu and incidental impurities. Also disclosed in a Cu alloy clad material wherein the substrate is made of Cu or Cu alloy having high electrical conductivity and good heat dissipation, and the cladding or partial cladding is composed of the Cu alloy having the composition specified above.
摘要翻译：公开了一种在半导体器件引线中使用的具有高抗氧化性的Cu合金。该合金基本上由7-15重量％的Mn，10-30重量％的Zn，0.2-10重量％的Ni，0.1-3重量％的Al组成，余量为Cu和杂质。还公开在Cu合金包覆材料中，其中基底由具有高导电性和良好散热性的Cu或Cu合金制成，并且包层或部分包层由具有上述组成的Cu合金构成。

3. 发明授权

US4416853A Cu-Ag base alloy brazing filler material 失效
标题翻译： Cu-Ag基合金钎料
公开(公告)号：US4416853A
公开(公告)日：1983-11-22
申请号：US373498
申请日：1982-04-16
申请人： Masaki Morikawa , Hideaki Yoshida , Kunio Kishida , Chuji Tanaka
发明人： Masaki Morikawa , Hideaki Yoshida , Kunio Kishida , Chuji Tanaka
IPC分类号： B23K35/30 , C22C9/00
CPC分类号： B23K35/302
摘要： A Cu-Ag alloy brazing filler material with low Ag content that exhibits excellent brazability and has a low vapor pressure is disclosed. The filler material comprises 5 to 35% by weight of Ag, 2.5 to 13% by weight of Si, with the balance being Cu and incidental impurities. The properties of the filler material can be improved further by addition of at least one element selected from the group consisting of Sn, In, Fe, Ni, Co, B and Li.
摘要翻译： PCT No.PCT / JP81 / 00189 Sec。 371日期：1982年4月16日 102（e）日期1982年4月16日PCT申请日1981年8月25日PCT公布。第WO82 / 00790号公报 1982年3月18日公开了一种具有优异的钎焊性和低蒸气压的低Ag含量的Cu-Ag合金钎焊料。填充材料包含5至35重量％的Ag，2.5至13重量％的Si，余量为Cu和附带的杂质。通过添加选自Sn，In，Fe，Ni，Co，B和Li中的至少一种元素，可以进一步提高填充材料的性能。

4. 发明授权

US4411864A Cu-Ag-Si Base alloy brazing filler material 失效
标题翻译： Cu-Ag-Si基合金钎焊料
公开(公告)号：US4411864A
公开(公告)日：1983-10-25
申请号：US406236
申请日：1982-07-30
申请人： Masaki Morikawa , Hideaki Yoshida , Kunio Kishida , Chuji Tanaka
发明人： Masaki Morikawa , Hideaki Yoshida , Kunio Kishida , Chuji Tanaka
IPC分类号： C22C5/06 , B23K35/30 , C22C5/08 , C22C9/00 , C22C30/02
CPC分类号： B23K35/302
摘要： A Cu-Ag alloy brazing material that exhibits excellent cold workability, brazability and has a low vapor pressure is disclosed. The filler material comprises more than 35 to 50% by weight of Ag, 2.2 to 6% by weight of Si, with the balance being Cu and incidental impurities. The properties of the filler material can be improved further by addition of at least one element selected from the group consisting of Sn, In, Fe, Ni, Co, B and Li.
摘要翻译： PCT No.PCT / JP81 / 00338 Sec。 371日期1982年7月30日 102（e）1982年7月30日PCT PCT 1991年11月18日PCT公布。出版物WO82 / 02013 日期：1982年6月24日。公开了一种表现出优异的冷加工性，钎焊性和低蒸气压的Cu-Ag合金钎焊材料。填料含有35〜50重量％的Ag，2.2〜6重量％的Si，余量为Cu和杂质。通过添加选自Sn，In，Fe，Ni，Co，B和Li中的至少一种元素，可以进一步提高填充材料的性能。

5. 发明授权

US5282946A Platinum-cobalt alloy sputtering target and method for manufacturing same 失效
标题翻译：铂 - 钴合金溅射靶及其制造方法
公开(公告)号：US5282946A
公开(公告)日：1994-02-01
申请号：US903748
申请日：1992-06-25
申请人： Makoto Kinoshita , Jun Tamura , Masaki Morikawa , Kunio Kishida , Toshinori Ishii , Akifumi Mishima
发明人： Makoto Kinoshita , Jun Tamura , Masaki Morikawa , Kunio Kishida , Toshinori Ishii , Akifumi Mishima
IPC分类号： C22C5/04 , C22C19/07 , C23C14/34
CPC分类号： C22C19/07 , C22C5/04 , C23C14/3414
摘要： A sputtering target of platinum-cobalt alloy is disclosed which contains 10 to 55% by weight of platinum; 1 to 15% by weight of a first additional element selected from the group consisting of nickel and tantalum; no more than 1.5% by weight of a second additional element selected from the group consisting of boron, titanium, lanthanum, cerium, neodymium, beryllium, calcium, zirconium, and silicon; no more than 20% by weight of chromium; and balance cobalt. A method for manufacturing the sputtering target is also disclosed. In the method, a platinum-cobalt alloy containing specific ingredients in predetermined amounts is first prepared. Then, the platinum-cobalt alloy is subjected to hot plastic working with a thickness reduction of no less than 30%. Subsequently, the alloy thus hot worked is subjected to a cold plastic working with a thickness reduction of no less than 5% at a temperature less than the recrystallization temperature of the alloy.
摘要翻译：公开了一种铂 - 钴合金的溅射靶，其包含10至55重量％的铂; 1至15重量％的选自镍和钽的第一附加元素; 不超过1.5重量％的选自硼，钛，镧，铈，钕，铍，钙，锆和硅的第二附加元素; 不超过20％的铬; 并平衡钴。还公开了溅射靶的制造方法。在该方法中，首先制备含有预定量的特定成分的铂 - 钴合金。然后，铂 - 钴合金经受热塑性加工，其厚度减小不小于30％。随后，将这样热加工的合金在小于合金的再结晶温度的温度下进行厚度降低不小于5％的冷塑性加工。

6. 发明授权

US4717436A Wire for bonding a semiconductor device 失效
标题翻译：用于接合半导体器件的线
公开(公告)号：US4717436A
公开(公告)日：1988-01-05
申请号：US36249
申请日：1987-04-09
申请人： Naoyuki Hosoda , Masaki Morikawa , Naoki Uchiyama , Hideaki Yoshida , Toshiaki Ono
发明人： Naoyuki Hosoda , Masaki Morikawa , Naoki Uchiyama , Hideaki Yoshida , Toshiaki Ono
IPC分类号： C22C9/00 , C30B13/00 , H01B1/02 , H01L21/48 , H01L23/49
CPC分类号： H01L24/43 , C22C9/00 , C30B13/00 , C30B29/02 , H01B1/026 , H01L24/45 , H01L2224/05624 , H01L2224/43 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48624 , H01L2924/00011 , H01L2924/01005 , H01L2924/0101 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01022 , H01L2924/01023 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01037 , H01L2924/01039 , H01L2924/0104 , H01L2924/01041 , H01L2924/01047 , H01L2924/0105 , H01L2924/01052 , H01L2924/01055 , H01L2924/01057 , H01L2924/01058 , H01L2924/01059 , H01L2924/0106 , H01L2924/01063 , H01L2924/01064 , H01L2924/01065 , H01L2924/01066 , H01L2924/01067 , H01L2924/01068 , H01L2924/0107 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/01105 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/20752 , Y10T428/12431
摘要： The present invention eliminates the problems associated with the use of oxygen-free copper and other high-purity copper materials as bonding wires. In accordance with one aspect of the present invention, at least one rare earth element, or at least one element selected from the group consisting of Mg, Ca, Ti, Zr, Hf, Li, Na, K, Rb and Cs, or the combination of at least one rare earth element and at least one elemented selected from the above-specified group is incorporated in high-purity copper as a refining component in an amount of 0.1-100 ppm on a weight basis, and the high-purity copper is subsequently refined by zone melting. The very fine wire drawn from the so refined high-purity copper has the advantage that it can be employed in high-speed ball bonding of a semiconductor chip with a minimum chance of damaging the bonding pad on the chip by the ball forming at the tip of the wire.In accordance with another aspect of the present invention, 0.5-3 ppm of a rare earth element and/or Y is further incorporated as an alloying component in the zone-refined high-purity copper.
摘要翻译：本发明消除了与使用无氧铜和其它高纯度铜材料作为接合线相关的问题。根据本发明的一个方面，至少一种稀土元素或选自Mg，Ca，Ti，Zr，Hf，Li，Na，K，Rb和Cs中的至少一种元素，或将至少一种稀土元素和至少一种选自上述特定基团的元素的组合作为精制组分以重量计以0.1-100ppm的量加入到高纯度铜中，并且将高纯度铜随后通过区域熔化进行精制。从精细化的高纯度铜制成的极细金属丝具有以下优点：可以将半导体芯片的高速球焊接在最小的可能性上，通过在尖端处的球形成损坏芯片上的焊盘的电线。根据本发明的另一方面，在区域精制的高纯度铜中进一步掺入0.5-3ppm的稀土元素和/或Y作为合金成分。

7. 发明授权

US4676827A Wire for bonding a semiconductor device and process for producing the same 失效
标题翻译：用于接合半导体器件的电线及其制造方法
公开(公告)号：US4676827A
公开(公告)日：1987-06-30
申请号：US844350
申请日：1986-03-26
申请人： Naoyuki Hosoda , Masaki Morikawa , Naoki Uchiyama , Hideaki Yoshida , Toshiaki Ono
发明人： Naoyuki Hosoda , Masaki Morikawa , Naoki Uchiyama , Hideaki Yoshida , Toshiaki Ono
IPC分类号： C22C9/00 , C30B13/00 , H01B1/02 , H01L21/48 , H01L23/49 , C22B9/00
CPC分类号： H01L24/43 , C22C9/00 , C30B13/00 , C30B29/02 , H01B1/026 , H01L24/45 , H01L2224/05624 , H01L2224/43 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48624 , H01L2924/00011 , H01L2924/01005 , H01L2924/0101 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01022 , H01L2924/01023 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01037 , H01L2924/01039 , H01L2924/0104 , H01L2924/01041 , H01L2924/01047 , H01L2924/0105 , H01L2924/01052 , H01L2924/01055 , H01L2924/01057 , H01L2924/01058 , H01L2924/01059 , H01L2924/0106 , H01L2924/01063 , H01L2924/01064 , H01L2924/01065 , H01L2924/01066 , H01L2924/01067 , H01L2924/01068 , H01L2924/0107 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/01105 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/20752 , Y10T428/12431
摘要： The present invention eliminates the problems associated with the use of oxygen-free copper and other high-purity copper materials as bonding wires. At least one rare earth element, or at least one element selected from the group consisting of Mg, Ca, Ti, Zr, Hf, Li, Na, K, Rb and Cs, or the combination of at least one rare earth element and at least one elemented selected from the above-specified group is incorporated in high-purity copper as a refining component in an amount of 0.1-100 ppm on a weight basis, and the high-purity copper is subsequently refined by zone melting. The very fine wire drawn from the so refined high-purity copper has the advantage that it can be employed in high-speed ball bonding of a semiconductor chip with a minimum chance of damaging the bonding pad on the chip by the ball forming at the tip of the wire.
摘要翻译：本发明消除了与使用无氧铜和其它高纯度铜材料作为接合线相关的问题。至少一种稀土元素或选自Mg，Ca，Ti，Zr，Hf，Li，Na，K，Rb和Cs中的至少一种元素，或至少一种稀土元素和从上述规定组中选择的至少一种元素作为精制成分以0.1〜100ppm的重量配合在高纯度铜中，高纯度铜随后通过区域熔融进行精制。从精细化的高纯度铜制成的极细金属丝具有以下优点：可以将半导体芯片的高速球接合用于通过在尖端处的球形成而损坏芯片上的焊盘的最小机会的电线。

8. 发明授权

US08887374B2 Method of manufacturing fused silica crucible 有权
标题翻译：制造石英坩埚的方法
公开(公告)号：US08887374B2
公开(公告)日：2014-11-18
申请号：US13112580
申请日：2011-05-20
申请人： Takeshi Fujita , Masaki Morikawa
发明人： Takeshi Fujita , Masaki Morikawa
IPC分类号： H01S4/00 , C03B19/09 , H05B7/085 , C04B41/91 , C04B35/52 , C04B41/00 , C04B41/53
CPC分类号： C03B19/095 , C04B35/52 , C04B41/009 , C04B41/53 , C04B41/91 , C04B2235/72 , H05B7/085 , Y10T29/49002 , Y10T29/49117 , Y10T29/49204 , Y10T29/49206
摘要： Method of manufacturing a fused silica crucible, including manufacturing a plurality of carbon electrodes for melting a vitreous silica object to be melted by arc discharge by rubbing the surface of a carbon electrode of the electrodes with a vitreous silica of the same type as the vitreous silica object to be melted, by at least one of: inserting a front end of the carbon electrode into a storage tank storing powdered vitreous silica, by at least one of rotating and reciprocating in an axial direction the storage tank and the carbon electrode relative to each other; rubbing the surface of the carbon electrode by ejecting powdered vitreous silica from a nozzle onto the surface of the electrode; rubbing the surface of the electrode with a vitreous silica grinder; and rubbing the surface of the electrode against a rotating surface of a portion of a fused vitreous silica crucible.
摘要翻译：石英玻璃坩埚的制造方法，其特征在于，使用与所述玻璃状二氧化硅相同类型的玻璃状二氧化硅摩擦所述电极的碳电极的表面，制造多个用于熔融氧化硅玻璃物体的电弧放电熔化的碳电极通过以下至少一种方式，通过以下至少一种方式：通过沿着轴向方向旋转和往复运动的方式将碳电极的前端插入储存粉状玻璃状二氧化硅的储存罐中，至少一个相对于每个存储罐和碳电极其他; 通过将粉末状二氧化硅从喷嘴喷射到电极的表面上来摩擦碳电极的表面; 用石英砂磨机摩擦电极表面; 并且将电极的表面相对于熔融玻璃状石英坩埚的一部分的旋转表面摩擦。

9. 发明授权

US08105514B2 Mold for producing silica crucible 有权
标题翻译：用于生产硅胶坩埚的模具
公开(公告)号：US08105514B2
公开(公告)日：2012-01-31
申请号：US12688501
申请日：2010-01-15
申请人： Takuma Yoshioka , Masaki Morikawa
发明人： Takuma Yoshioka , Masaki Morikawa
IPC分类号： C30B13/06 , B29C39/08
CPC分类号： C30B15/10 , C03B19/095
摘要： In a mold for use in the production of a silica crucible, a mold cover corresponding to a small-diameter thinned portion of an upper part of the silica crucible is detachably disposed on a mold substrate corresponding to a main body of the silica crucible, and the mold cover has a barrier function against arc heating, and an inner diameter of the mold cover is smaller than that of the mold substrate but larger than that of the silica crucible.
摘要翻译：在二氧化硅坩埚的制造用模具中，对应于二氧化硅坩埚上部的小直径变薄部分的模具盖可拆卸地设置在对应于二氧化硅坩埚主体的模具基板上，模具盖具有防止电弧加热的阻碍功能，并且模具盖的内径小于模具基板的内径，但是大于二氧化硅坩埚的内径。

10. 发明申请

US20100178375A1 MOLD FOR PRODUCING SILICA CRUCIBLE 有权
标题翻译：生产二氧化硅可塑性的模具
公开(公告)号：US20100178375A1
公开(公告)日：2010-07-15
申请号：US12688555
申请日：2010-01-15
申请人： Takuma Yoshioka , Masaki Morikawa
发明人： Takuma Yoshioka , Masaki Morikawa
IPC分类号： B28B1/34
CPC分类号： C03B19/095 , C30B15/10 , C30B35/002
摘要： There is provided a mold for use in the production of a silica crucible by heat-fusing silica or quartz powder attached onto an inner wall of a rotating mold, wherein an inner side of an upper opening portion of the mold corresponding to an upper part of the silica crucible is ground to obtain a step portion and a ring-shaped heat insulating barrier member having an inner diameter smaller than that of the mold is disposed on the step portion through a hollow disk-shaped support member having an inner diameter equal to or somewhat larger than that of the heat insulating barrier member.
摘要翻译：提供了一种用于通过将附着在旋转模具的内壁上的二氧化硅或石英粉末进行热熔融来生产二氧化硅坩埚的模具，其中模具的上部开口部分的内侧对应于研磨二氧化硅坩埚以获得台阶部分，并且具有小于模具内径的内径的环形绝热阻挡构件通过中空圆盘状支撑构件设置在台阶部分上，该中空圆盘状支撑构件的内径等于或等于略大于绝热阻挡构件的尺寸。

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