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    • 4. 发明授权
    • Method of removing photoresist film
    • 去除光刻胶膜的方法
    • US06517999B1
    • 2003-02-11
    • US09614258
    • 2000-07-12
    • Izumi OyaSeiji NodaMakoto MiyamotoMasaki KuzumotoMasashi OhmoriTatsuo Kataoka
    • Izumi OyaSeiji NodaMakoto MiyamotoMasaki KuzumotoMasashi OhmoriTatsuo Kataoka
    • G03F742
    • H01L21/67075G03F7/42G03F7/422G03F7/423G03F7/428
    • A method of removing photoresist film with high efficiency of removal and friendliness with the environment while reducing the material consumption and the cost for the ventilation facility, and an apparatus used for the method are provided. Particularly the present invention provides a method of removing a photoresist film provided on a surface of a substrate, comprising steps of in a sealed system, disposing the substrate surface having the photoresist film to contact with a photoresist film removing solution, making ozone exist in gas phase and/or solution phase in the vicinity of the liquid surface of the photoresist film removing solution, and changing a relative position between the surface of the substrate and the liquid surface of the solution to decompose or remove the photoresist film from the substarate, characterized in that the relative position is changed continuously or intermittently within a range between a position where a bottom edge of the substrate is present above the liquid surface of the solution, and another position where a top edge of the substrate is present below the liquid surface of the solution. The present invention also provides an apparatus used for the method.
    • 提供了一种去除光致抗蚀剂膜的方法,同时降低了通风设备的材料消耗和成本,同时具有高度的去除效率和环境友好性,并且提供了用于该方法的设备。 特别地,本发明提供一种除去设置在基板表面上的光致抗蚀剂膜的方法,包括以下步骤:在密封系统中,设置具有光致抗蚀剂膜的基板表面与光致抗蚀剂膜去除溶液接触,使臭氧存在于气体中 相位和/或溶液相位在光致抗蚀剂膜去除溶液的液面附近,并且改变基板的表面和溶液的液面之间的相对位置,以从底层分解或去除光致抗蚀剂膜,其特征在于 因为相对位置在溶液的液面之上存在基板的底部边缘的位置与基板的上边缘的另一位置之间的范围内连续地或间歇地变化, 解决方案。 本发明还提供了一种用于该方法的装置。
    • 5. 发明授权
    • Apparatus for removing photoresist film
    • 去除光刻胶膜的设备
    • US07965372B2
    • 2011-06-21
    • US10134508
    • 2002-04-30
    • Seiji NodaMasaki KuzumotoIzumi OyaMakoto Miyamoto
    • Seiji NodaMasaki KuzumotoIzumi OyaMakoto Miyamoto
    • G03B27/32G03B27/52
    • G03F7/427G03F7/42
    • A photoresist film removing apparatus includes a reacting chamber, an ozonizer producing a gas supplied to the reacting chamber, and an exhaust system that exhausts the gas from the reacting chamber. A source of a photoresist film-remover is located opposite a stage carrying a substrate covered with photoresist. Photoresist film-remover and the gas are supplied to the substrate through apertures. An electric field may be generated between the source of the photoresist film-remover and the substrate. Alternatively, a centrally located feed tube supplies only one of the gas and the photoresist film-remover through a single aperture and a reservoir discharges the other through apertures. The reservoir surrounds and is sealed to the feed tube. The apparatus may include a container holding a liquid photoresist film-remover and a mixture of the gas and remover is supplied from outside the reacting chamber to the substrate.
    • 光致抗蚀剂膜去除装置包括反应室,产生供应到反应室的气体的臭氧发生器和从反应室排出气体的排气系统。 光致抗蚀剂膜去除剂的来源位于载有被光致抗蚀剂覆盖的基底的阶段上。 光致抗蚀剂去除剂和气体通过孔提供给基材。 可以在光致抗蚀剂去膜剂的源和基板之间产生电场。 或者,位于中心的进料管仅通过单个孔提供气体和光致抗蚀剂膜去除剂中的一个,并且储存器通过孔排出另一个。 储存器周围并密封到进料管。 该装置可以包括容纳液体光致抗蚀剂膜去除剂的容器,并且将气体和去除剂的混合物从反应室外部供应到基底。