专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130009147A1 METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 有权
标题翻译：用于制造氧化物半导体膜的方法，制造半导体器件的方法和半导体器件
公开(公告)号：US20130009147A1
公开(公告)日：2013-01-10
申请号：US13535523
申请日：2012-06-28
申请人： Masaki KOYAMA , Kosei NEI , Akihisa SHIMOMURA , Suguru HONDO , Toru HASEGAWA
发明人： Masaki KOYAMA , Kosei NEI , Akihisa SHIMOMURA , Suguru HONDO , Toru HASEGAWA
IPC分类号： H01L21/36 , H01L29/12
CPC分类号： H01L21/02565 , H01L21/02422 , H01L21/02488 , H01L21/02554 , H01L21/02631 , H01L21/02686 , H01L29/66969 , H01L29/78603 , H01L29/78606 , H01L29/7869
摘要： In an oxide semiconductor film formed over an insulating surface, an amorphous region remains in the vicinity of the interface with the base, which is thought to cause a variation in the characteristics of a transistor and the like. A base surface or film touching the oxide semiconductor film is formed of a material having a melting point higher than that of a material used for the oxide semiconductor film. Accordingly, a crystalline region is allowed to exist in the vicinity of the interface with the base surface or film touching the oxide semiconductor film. An insulating metal oxide is used for the base surface or film touching the oxide semiconductor film. The metal oxide used here is an aluminum oxide, gallium oxide, or the like that is a material belonging to the same group as the material of the oxide semiconductor film.
摘要翻译：在形成在绝缘表面上的氧化物半导体膜中，非晶区保持在与基极的界面附近，这被认为是导致晶体管等的特性的变化。接触氧化物半导体膜的基底表面或膜由熔点高于用于氧化物半导体膜的材料的熔点形成。因此，与接触氧化物半导体膜的基面或膜的界面附近存在结晶区域。绝缘金属氧化物用于接触氧化物半导体膜的基底表面或膜。这里使用的金属氧化物是与氧化物半导体膜的材料相同的材料的氧化铝，氧化镓等。

2. 发明申请

US20110053384A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造SOI衬底的方法和制造半导体器件的方法
公开(公告)号：US20110053384A1
公开(公告)日：2011-03-03
申请号：US12872222
申请日：2010-08-31
申请人： Masaki KOYAMA , Kosei NEI , Toru HASEGAWA , Junpei MOMO , Eiji HIGA
发明人： Masaki KOYAMA , Kosei NEI , Toru HASEGAWA , Junpei MOMO , Eiji HIGA
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02052 , H01L21/268
摘要： An object is to provide a method for manufacturing an SOI substrate including a semiconductor film with high planarity and high crystallinity. After a single crystal semiconductor film is formed over an insulating film by a separation step, a natural oxide film existing on a surface of the semiconductor film is removed and the semiconductor film is irradiated with first laser light and second laser light under an inert gas atmosphere or a reduced-pressure atmosphere. The number of shots of the first laser light that is emitted to an arbitrary point in the semiconductor film is greater than or equal to 7, preferably greater than or equal to 10 and less than or equal to 100. The number of shots of the second laser light that is emitted to an arbitrary point in the semiconductor film is greater than 0 and less than or equal to 2.
摘要翻译：本发明的目的是提供一种制造包括具有高平坦度和高结晶度的半导体膜的SOI衬底的方法。在通过分离步骤在绝缘膜上形成单晶半导体膜之后，去除存在于半导体膜表面上的自然氧化膜，并在惰性气体气氛下用第一激光和第二激光照射半导体膜或减压气氛。发射到半导体膜中的任意点的第一激光的照射次数大于或等于7，优选大于或等于10并且小于或等于100.第二次的照射次数发射到半导体膜中的任意点的激光大于0且小于或等于2。

3. 发明申请

US20110053347A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110053347A1
公开(公告)日：2011-03-03
申请号：US12872213
申请日：2010-08-31
申请人： Akihisa SHIMOMURA , Masaki KOYAMA , Toru HASEGAWA
发明人： Akihisa SHIMOMURA , Masaki KOYAMA , Toru HASEGAWA
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02686 , H01L21/84
摘要： It is an object to provide a method for manufacturing an SOI substrate in which reduction in yield can be suppressed while impurity diffusion into a semiconductor film is suppressed. A semiconductor substrate provided with an oxide film is formed by thermally oxidizing the surface of the semiconductor substrate. Plasma is generated under an atmosphere of a gas containing nitrogen atoms and plasma nitridation is performed on part of the oxide film, so that a semiconductor substrate in which an insulating film containing nitrogen atoms is formed over the oxide film is obtained. After bonding the insulating film containing nitrogen atoms and a glass substrate to each other, the semiconductor substrate is split, whereby an SOI substrate in which the insulating film containing nitrogen atoms, the oxide film, a thin semiconductor film are stacked in this order is formed.
摘要翻译：本发明的目的是提供一种制造SOI衬底的方法，其中抑制杂质扩散到半导体膜中的产率降低。通过热氧化半导体衬底的表面形成设置有氧化膜的半导体衬底。在含有氮原子的气体的气氛下产生等离子体，在部分氧化膜上进行等离子体氮化，得到在氧化物膜上形成有氮原子的绝缘膜的半导体衬底。在将含有氮原子的绝缘膜和玻璃基板彼此接合之后，半导体衬底被分离，由此形成其中包含氮原子的绝缘膜，氧化物膜，薄半导体膜依次层叠的SOI衬底。

4. 发明申请

US20110092050A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110092050A1
公开(公告)日：2011-04-21
申请号：US12901005
申请日：2010-10-08
申请人： Akihisa SHIMOMURA , Naoki OKUNO , Masaki KOYAMA , Yasuhiro JINBO
发明人： Akihisa SHIMOMURA , Naoki OKUNO , Masaki KOYAMA , Yasuhiro JINBO
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L27/1229 , H01L27/1251 , H01L27/1262 , H01L27/1266 , H01L29/66772
摘要： A first embrittlement layer is formed by doping a first single-crystal semiconductor substrate with a first ion; a second embrittlement layer is formed by doping a second single-crystal semiconductor substrate with a second ion; the first and second single-crystal semiconductor substrates are bonded to each other; the first single-crystal semiconductor film is formed over the second single-crystal semiconductor substrate by a first heat treatment; an insulating substrate is bonded over the first single-crystal semiconductor film; and the first and second single-crystal semiconductor films are formed over the insulating substrate by a second heat treatment. A dose of the first ion is higher than that of the second ion and a temperature of the first heat treatment is lower than that of the second heat treatment.
摘要翻译：通过用第一离子掺杂第一单晶半导体衬底形成第一脆化层; 通过用第二离子掺杂第二单晶半导体衬底形成第二脆化层; 第一和第二单晶半导体衬底彼此接合; 通过第一热处理在第二单晶半导体衬底上形成第一单晶半导体膜; 绝缘基板接合在第一单晶半导体膜上; 并且通过第二热处理在绝缘基板上形成第一和第二单晶半导体膜。第一离子的剂量高于第二离子，第一热处理的温度低于第二热处理的温度。

5. 发明申请

US20100120224A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100120224A1
公开(公告)日：2010-05-13
申请号：US12615613
申请日：2009-11-10
申请人： Akihisa SHIMOMURA , Masaki KOYAMA , Yasuhiro JINBO , Naoki OKUNO
发明人： Akihisa SHIMOMURA , Masaki KOYAMA , Yasuhiro JINBO , Naoki OKUNO
IPC分类号： H01L21/46
CPC分类号： H01L21/84 , H01L21/76254
摘要： An object is to provide a method for manufacturing an SOI substrate including a single crystal silicon film whose plane orientation is (100) and a single crystal silicon film whose plane orientation is (110) with high yield. A first single crystal silicon substrate whose plane orientation is (100) is doped with first ions to form a first embrittlement layer. A second single crystal silicon substrate whose plane orientation is (110) is doped with second ions to selectively form a second embrittlement layer. Only part of the first single crystal silicon substrate is separated along the first embrittlement layer by first heat treatment, thereby forming a first single crystal silicon film. A region of the second single crystal silicon substrate, in which the second embrittlement layer is not formed, is removed. Part of the second single crystal silicon substrate is separated along the second embrittlement layer by second heat treatment, thereby forming a second single crystal silicon film.
摘要翻译：本发明的目的是提供一种制造包括其平面取向为（100）的单晶硅膜和具有高产率的平面取向为（110）的单晶硅膜的SOI衬底的方法。其平面取向为（100）的第一单晶硅衬底被掺杂有第一离子以形成第一脆化层。其平面取向为（110）的第二单晶硅衬底被掺杂有第二离子以选择性地形成第二脆化层。通过第一热处理，仅第一单晶硅衬底的一部分沿着第一脆化层分离，从而形成第一单晶硅膜。除去未形成第二脆性层的第二单晶硅衬底的区域。通过第二热处理沿第二脆化层分离第二单晶硅衬底的一部分，从而形成第二单晶硅膜。

6. 发明申请

US20090230503A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体衬底的方法和半导体器件
公开(公告)号：US20090230503A1
公开(公告)日：2009-09-17
申请号：US12402518
申请日：2009-03-12
申请人： Akihisa SHIMOMURA , Masaki KOYAMA , Motoki NAKASHIMA
发明人： Akihisa SHIMOMURA , Masaki KOYAMA , Motoki NAKASHIMA
IPC分类号： H01L27/12 , H01L21/762 , B32B13/04
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： Methods for manufacturing a semiconductor substrate and a semiconductor device by which a high-performance semiconductor element can be formed are provided. A single crystal semiconductor substrate including an embrittlement layer and a base substrate are bonded to each other with an insulating layer interposed therebetween, and the single crystal semiconductor substrate is separated along the embrittlement layer by heat treatment to fix a single crystal semiconductor layer over the base substrate. Next, a plurality of regions of a monitor substrate are irradiated with laser light under conditions of different energy densities, and carbon concentration distribution and hydrogen concentration distribution in a depth direction of each region of the single crystal semiconductor layer which has been irradiated with the laser light is measured. Optimal irradiation intensity of laser light is irradiation intensity with which a local maximum of the carbon concentration and a shoulder peak of the hydrogen concentration are observed. A single crystal semiconductor layer is irradiated with optimal laser light at energy density detected by using the monitor substrate, whereby a semiconductor substrate is manufactured.
摘要翻译：提供了可以形成高性能半导体元件的半导体衬底和半导体器件的制造方法。将包含脆化层和基底基板的单晶半导体基板通过绝缘层彼此接合，通过热处理将单晶半导体基板沿着脆化层分离，将单晶半导体层固定在基板上基质。接下来，在能量密度不同的条件下，用激光照射监视器基板的多个区域，并且已经照射了激光的单晶半导体层的各区域的深度方向上的碳浓度分布和氢浓度分布测光。激光的最佳照射强度是观察到碳浓度的局部最大值和氢浓度的肩峰值的照射强度。通过使用监视器基板检测到的能量密度的最佳激光照射单晶半导体层，由此制造半导体衬底。

7. 发明申请

US20090111244A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090111244A1
公开(公告)日：2009-04-30
申请号：US12246577
申请日：2008-10-07
申请人： Shunpei YAMAZAKI , Junpei MOMO , Fumito ISAKA , Eiji HIGA , Masaki KOYAMA , Akihisa SHIMOMURA
发明人： Shunpei YAMAZAKI , Junpei MOMO , Fumito ISAKA , Eiji HIGA , Masaki KOYAMA , Akihisa SHIMOMURA
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , B23K26/03 , B23K26/083 , B23K26/12 , B23K26/127 , B23K26/14 , H01L21/268 , H01L21/3247 , H01L21/76254 , H01L27/1214 , H01L27/1218 , H01L29/66772
摘要： A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.
摘要翻译：照射通过激发氢气产生的离子并用离子掺杂装置加速的单晶半导体衬底，从而形成含有大量氢的损伤区域。在单晶半导体衬底和支撑衬底接合之后，单晶半导体衬底被加热以沿着损伤区域分离。当与单晶半导体衬底分离的单晶半导体层被加热时，用激光束照射该单晶半导体层。单晶半导体层通过激光束照射熔融而进行再单晶化，从而回收其结晶性并使单晶半导体层的表面平坦化。

8. 发明申请

US20090137095A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE MANUFACTURING APPARATUS 有权
标题翻译：制造半导体基板和半导体基板制造设备的方法
公开(公告)号：US20090137095A1
公开(公告)日：2009-05-28
申请号：US12275809
申请日：2008-11-21
申请人： Akihisa SHIMOMURA , Masaki KOYAMA , Satohiro OKAMOTO
发明人： Akihisa SHIMOMURA , Masaki KOYAMA , Satohiro OKAMOTO
IPC分类号： H01L21/02 , B29C65/00
CPC分类号： H01L21/76254
摘要： An object is to provide a uniform semiconductor substrate in which defective bonding is reduced. A further object is to manufacture the semiconductor substrate with a high yield. A first substrate and a second substrate are bonded in a reduced-pressure atmosphere by placing the first substrate at a certain region surrounded by an airtight holding mechanism provided over a support to surround the certain region of a surface of the support; placing the second substrate so as to come to be in contact with the airtight holding mechanism to ensure airtightness of a space surrounded by the support, the airtight holding mechanism, and the second substrate; evacuating the space whose airtightness is secured, thereby reducing an pressure in the space; disposing the second substrate in close contact with the first substrate using difference between the pressure in the space and outside atmpspheric pressure; and performing heat treatment.
摘要翻译：目的在于提供一种均匀的半导体衬底，其中不良接合被降低。另一个目的是以高产率制造半导体衬底。第一基板和第二基板通过将第一基板放置在由设置在支撑件上的气密保持机构包围的一定区域上而在减压气氛中接合，以围绕支撑体的表面的特定区域; 将第二基板放置成与气密保持机构接触，以确保由支撑体，气密保持机构和第二基板包围的空间的气密性; 疏散其气密性的空间，从而减小空间中的压力; 使用空间中的压力和外部大气压之间的差异将第二基板设置为与第一基板紧密接触; 并进行热处理。

9. 发明申请

US20110115046A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体衬底的方法和半导体器件
公开(公告)号：US20110115046A1
公开(公告)日：2011-05-19
申请号：US13011179
申请日：2011-01-21
申请人： Akihisa SHIMOMURA , Masaki KOYAMA , Motoki NAKASHIMA
发明人： Akihisa SHIMOMURA , Masaki KOYAMA , Motoki NAKASHIMA
IPC分类号： H01L29/06
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： Methods for manufacturing a semiconductor substrate and a semiconductor device by which a high-performance semiconductor element can be formed are provided. A single crystal semiconductor substrate including an embrittlement layer and a base substrate are bonded to each other with an insulating layer interposed therebetween, and the single crystal semiconductor substrate is separated along the embrittlement layer by heat treatment to fix a single crystal semiconductor layer over the base substrate. Next, a plurality of regions of a monitor substrate are irradiated with laser light under conditions of different energy densities, and carbon concentration distribution and hydrogen concentration distribution in a depth direction of each region of the single crystal semiconductor layer which has been irradiated with the laser light is measured. Optimal irradiation intensity of laser light is irradiation intensity with which a local maximum of the carbon concentration and a shoulder peak of the hydrogen concentration are observed. A single crystal semiconductor layer is irradiated with optimal laser light at energy density detected by using the monitor substrate, whereby a semiconductor substrate is manufactured.
摘要翻译：提供了可以形成高性能半导体元件的半导体衬底和半导体器件的制造方法。将包含脆化层和基底基板的单晶半导体基板通过绝缘层彼此接合，通过热处理将单晶半导体基板沿着脆化层分离，将单晶半导体层固定在基板上基质。接下来，在能量密度不同的条件下，用激光照射监视器基板的多个区域，并且已经照射了激光的单晶半导体层的各区域的深度方向上的碳浓度分布和氢浓度分布测光。激光的最佳照射强度是观察到碳浓度的局部最大值和氢浓度的肩峰值的照射强度。通过使用监视器基板检测到的能量密度的最佳激光照射单晶半导体层，由此制造半导体衬底。

10. 发明申请

US20110030901A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE MANUFACTURING APPARATUS 审中-公开
标题翻译：制造半导体基板和半导体基板制造装置的方法
公开(公告)号：US20110030901A1
公开(公告)日：2011-02-10
申请号：US12903527
申请日：2010-10-13
申请人： Akihisa SHIMOMURA , Masaki KOYAMA , Satohiro OKAMOTO
发明人： Akihisa SHIMOMURA , Masaki KOYAMA , Satohiro OKAMOTO
IPC分类号： B32B37/10
CPC分类号： H01L21/76254
摘要： An object is to provide a uniform semiconductor substrate in which defective bonding is reduced. A further object is to manufacture the semiconductor substrate with a high yield. A first substrate and a second substrate are bonded in a reduced-pressure atmosphere by placing the first substrate at a certain region surrounded by an airtight holding mechanism provided over a support to surround the certain region of a surface of the support; placing the second substrate so as to come to be in contact with the airtight holding mechanism to ensure airtightness of a space surrounded by the support, the airtight holding mechanism, and the second substrate; evacuating the space whose airtightness is secured, thereby reducing an pressure in the space; disposing the second substrate in close contact with the first substrate using difference between the pressure in the space and outside atmospheric pressure; and performing heat treatment.
摘要翻译：目的在于提供一种均匀的半导体衬底，其中不良接合被降低。另一个目的是以高产率制造半导体衬底。第一基板和第二基板通过将第一基板放置在由设置在支撑件上的气密保持机构包围的特定区域上而在减压气氛中接合，以围绕支撑体的表面的特定区域; 将第二基板放置成与气密保持机构接触，以确保由支撑体，气密保持机构和第二基板包围的空间的气密性; 疏散其气密性的空间，从而减小空间中的压力; 使用所述空间中的压力和外部大气压之间的差异将所述第二基板设置为与所述第一基板紧密接触; 并进行热处理。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式