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1. 发明申请

US20080303379A1 SURFACE ACOUSTIC WAVE DEVICE 审中-公开
标题翻译：表面声波设备
公开(公告)号：US20080303379A1
公开(公告)日：2008-12-11
申请号：US12190618
申请日：2008-08-13
申请人： Yasuharu NAKAI , Kenji NISHIYAMA , Takeshi NAKAO , Masanori KATO , Michio KADOTA
发明人： Yasuharu NAKAI , Kenji NISHIYAMA , Takeshi NAKAO , Masanori KATO , Michio KADOTA
IPC分类号： H01L41/107
CPC分类号： H03H9/02559 , H03H9/0222
摘要： A surface acoustic wave device includes a LiNbO3 substrate having Euler angles (0°±5°, θ, 0°±10°), electrodes that are disposed on the LiNbO3 substrate, are primarily composed of Cu, and include an IDT electrode, a first silicon oxide film having substantially the same thickness as the electrodes and disposed in an area other than an area on which the electrodes including the IDT electrode are disposed, and a second silicon oxide film disposed on the electrodes and the first silicon oxide film, wherein the Euler angle θ and the normalized thickness H of the second silicon oxide film are selected to satisfy the formula 1 or 2: −50×H2−3.5×H+38.275≦{θ}≦10H+35 (wherein H 0.25) Formula 2.
摘要翻译：表面声波装置包括具有欧拉角（0°±5°，θ，0°±10°）的LiNbO 3基板，设置在LiNbO 3基板上的电极主要由Cu组成，并且包括IDT电极，第一氧化硅膜具有与电极基本相同的厚度并且设置在除了包括IDT电极的电极的区域之外的区域中，以及设置在电极和第一氧化硅膜上的第二氧化硅膜，其中选择第二氧化硅膜的欧拉角θ和标准化厚度H以满足公式1或2：<？in-line-formula description =“In-line formula”end =“lead”？> - 50xH2- 3.5xH + 38.275 <=θθ<= 10H + 35（其中H <0.25）式1 <？在线公式描述=“在线公式”end =“tail”？> <？in-line- 公式描述=“在线公式”end =“lead”？> - 50xH2-3.5xH + 38.275 <= {θ} = 37.5（其中H> 0.25）公式2 <？in-line-formula description =“ 一致公式“end =”tail“？>

2. 发明申请

US20100146754A1 ACOUSTIC WAVE DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：声波设备及其制造方法
公开(公告)号：US20100146754A1
公开(公告)日：2010-06-17
申请号：US12706051
申请日：2010-02-16
申请人： Shunsuke KIDO , Takeshi NAKAO , Yasuharu NAKAI , Kenji NISHIYAMA , Michio KADOTA
发明人： Shunsuke KIDO , Takeshi NAKAO , Yasuharu NAKAI , Kenji NISHIYAMA , Michio KADOTA
IPC分类号： H01L41/22
CPC分类号： H03H9/02834 , H03H3/10 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49165
摘要： A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001λ, where the wavelength of an acoustic wave is λ.
摘要翻译：表面声波装置包括压电基板，设置在压电基板上的至少一个叉指式换能器（IDT）电极和用于改善覆盖IDT电极的温度特性的绝缘体层。当将绝缘体层的表面划分为IDT电极所在的第一表面区域和没有IDT电极的第二表面区域时，在第二表面区域的至少一部分中的绝缘体层的表面在距离第一表面区域的至少一部分中的压电衬底的绝缘体层的表面高至少约0.001λ，其中声波的波长为λ。

3. 发明申请

US20100219911A1 ACOUSTIC WAVE DEVICE AND METHOD FOR FABRICATING THE SAME 有权
公开(公告)号：US20100219911A1
公开(公告)日：2010-09-02
申请号：US12781050
申请日：2010-05-17
申请人： Shunsuke KIDO , Takeshi NAKAO , Yasuharu NAKAI , Kenji NISHIYAMA , Michio KADOTA
发明人： Shunsuke KIDO , Takeshi NAKAO , Yasuharu NAKAI , Kenji NISHIYAMA , Michio KADOTA
IPC分类号： H03H9/15
CPC分类号： H03H9/02834 , H03H3/10 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49165
摘要： A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001λ, where the wavelength of an acoustic wave is λ.

4. 发明申请

US20080296999A1 ACOUSTIC WAVE DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：声波设备及其制造方法
公开(公告)号：US20080296999A1
公开(公告)日：2008-12-04
申请号：US12191451
申请日：2008-08-14
申请人： Shunsuke KIDO , Takeshi NAKAO , Yasuharu NAKAI , Kenji NISHIYAMA , Michio KADOTA
发明人： Shunsuke KIDO , Takeshi NAKAO , Yasuharu NAKAI , Kenji NISHIYAMA , Michio KADOTA
IPC分类号： H01L41/04 , H01L41/22
CPC分类号： H03H9/02834 , H03H3/10 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49165
摘要： A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001λ, where the wavelength of an acoustic wave is λ.
摘要翻译：表面声波装置包括压电基板，设置在压电基板上的至少一个叉指式换能器（IDT）电极和用于改善覆盖IDT电极的温度特性的绝缘体层。当将绝缘体层的表面划分为IDT电极所在的第一表面区域和没有IDT电极的第二表面区域时，在第二表面区域的至少一部分中的绝缘体层的表面在比第一表面区域的至少一部分中的压电衬底的绝缘体层的表面高至少约0.001λ，其中声波的波长为λ。

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