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1. 发明授权

US4887137A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US4887137A
公开(公告)日：1989-12-12
申请号：US170028
申请日：1988-03-04
申请人： Masahiro Yoneda , Masahiro Hatanaka , Yoshio Kohno , Shinichi Satoh , Hidekazu Oda , Koichi Moriizumi
发明人： Masahiro Yoneda , Masahiro Hatanaka , Yoshio Kohno , Shinichi Satoh , Hidekazu Oda , Koichi Moriizumi
IPC分类号： H01L23/528 , H01L27/108
CPC分类号： H01L27/10829 , H01L23/528 , H01L27/10805 , H01L2924/0002 , Y10S257/911
摘要： A semiconductor memory device comprises four memory cells (4a, 6) arranged in point symmetry on a semiconductor substrate (1), and an insulating layer (10) covering the memory cells and having one contact hole (2) placed in the center of the point symmetry, with the contact hole enabling electrical connection to each of the memory cells.
摘要翻译：半导体存储器件包括在半导体衬底（1）上以点对称布置的四个存储单元（4a，6）和覆盖存储单元的绝缘层（10），并且具有一个接触孔（2）点对称，其中接触孔能够电连接到每个存储单元。

2. 发明授权

US4984199A Semiconductor memory cells having common contact hole 失效
标题翻译：具有公共接触孔的半导体存储单元
公开(公告)号：US4984199A
公开(公告)日：1991-01-08
申请号：US358495
申请日：1989-05-30
申请人： Masahiro Yoneda , Masahiro Hatanaka , Yoshio Kohno , Shinichi Satoh , Hidekazu Oda , Koichi Moriizumi
发明人： Masahiro Yoneda , Masahiro Hatanaka , Yoshio Kohno , Shinichi Satoh , Hidekazu Oda , Koichi Moriizumi
IPC分类号： G11C11/401 , G11C5/02 , G11C11/24 , G11C11/404 , H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： G11C5/02 , G11C11/24 , G11C11/404 , H01L27/10805 , H01L27/10829
摘要： A dynamic type semiconductor device comprises a memory cell array including a plurality of cell groups, each of the cell groups including four adjacent memory cells disposed in a point symmetry fashion, with a single contact hole formed at the center of the point symmetry to be common to the four memory cells, in which the four memory cells and bit lines are connected through the single contact hole.
摘要翻译：动态类型半导体器件包括包括多个单元组的存储单元阵列，每个单元组包括以点对称方式设置的四个相邻的存储单元，其中形成在点对称中心的单个接触孔为共同的其中四个存储单元和位线通过单个接触孔连接到四个存储单元。

3. 发明授权

US08760642B2 Substrate inspection apparatus and mask inspection apparatus 有权
标题翻译：基板检查装置和面罩检查装置
公开(公告)号：US08760642B2
公开(公告)日：2014-06-24
申请号：US13293305
申请日：2011-11-10
申请人： Zenta Hori , Haruhiko Kusunose , Koichi Moriizumi
发明人： Zenta Hori , Haruhiko Kusunose , Koichi Moriizumi
IPC分类号： G01N21/88
CPC分类号： G03F1/84 , G01N21/956 , G01N2021/95615 , G01N2021/95676 , G03F7/7065
摘要： Substrate inspection apparatus, in which the acquisition of the inspection data for a defect and the acquisition of the focus data of the objective lens are performed in parallel, includes an autofocus apparatus for controlling position of the objective lens along its optical axis. The autofocus apparatus includes a focus error detection unit and a focus control signal generation unit for generating a focus control signal for controlling the position of the objective lens for each scan line using a focus data signal composed of an objective position signal or the objective position signal to which a focus error signal is added. When “i” is assumed as a positive integer and “m” is as a natural number, the focus data signal which was acquired during the scanning period of i-th scan line is used to produce the focus control signal used to scan the (i+2m)-th scan line.
摘要翻译：并行地执行对缺陷的检查数据的获取和物镜的聚焦数据的获取的基板检查装置，包括用于控制物镜沿其光轴的位置的自动对焦装置。自动对焦装置包括聚焦误差检测单元和聚焦控制信号产生单元，用于使用由目标位置信号或目标位置信号组成的聚焦数据信号产生用于每个扫描线控制物镜的位置的聚焦控制信号添加了聚焦误差信号。当假设“i”为正整数，“m”为自然数时，在第i条扫描线的扫描周期中获取的聚焦数据信号用于产生用于扫描（ i + 2m）扫描线。

4. 发明授权

US5153441A Electron-beam exposure apparatus 失效
标题翻译：电子束曝光装置
公开(公告)号：US5153441A
公开(公告)日：1992-10-06
申请号：US617018
申请日：1990-11-21
申请人： Koichi Moriizumi
发明人： Koichi Moriizumi
IPC分类号： H01L21/027 , H01J37/09 , H01J37/302
CPC分类号： H01J37/302 , H01J37/09 , H01J2237/0453 , H01J2237/0458 , H01J2237/3175
摘要： An electron-beam exposure apparatus includes a sample stage for holding a sample, an electron gun, a first aperture for shaping an electron beam emitted from the electron gun, an electro-optical device for causing an electron beam formed by the first aperture to be deflected and to be converged on a sample held on the sample stage, a second aperture in which a plurality of block patterns are formed, for shaping an electron beam from an electro-optical device, and a movement device for moving the second aperture in order to cause an electron beam from the electro-optical device to strike a desired block pattern among a plurality of the block patterns.
摘要翻译：电子束曝光装置包括用于保持样品的样品台，电子枪，用于使从电子枪发射的电子束成形的第一孔，用于使由第一孔形成的电子束的电光装置为偏转并被会聚在保持在样品台上的样品上，形成多个块图案的第二孔，用于使来自电光装置的电子束成形，以及用于依次移动第二孔的移动装置使得来自电光装置的电子束在多个块图案之间发生期望的块图案。

5. 发明授权

US5796408A Charged particle beam drawing data production apparatus and charged particle beam drawing system 失效
标题翻译：带电粒子束图数据生产装置和带电粒子束拉制系统
公开(公告)号：US5796408A
公开(公告)日：1998-08-18
申请号：US555074
申请日：1995-11-08
申请人： Kinya Kamiyama , Koichi Moriizumi , Makoto Kanno , Hironobu Taoka
发明人： Kinya Kamiyama , Koichi Moriizumi , Makoto Kanno , Hironobu Taoka
IPC分类号： H01L21/027 , H01J37/302 , G06F15/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J2237/31776
摘要： A system for preventing deterioration of dimensional accuracy by reducing production of micro graphics at the time of production of drawing data to be input to a charged particle beam drawing apparatus. A CPU divides a design layout data into units of graphic data processing area (a step S1) and executes elimination of duplication and tone reversal processes in both X direction and Y direction (steps S2A, S2B) for the respective graphic data processing areas. Moreover, it performs, with reference to a micro graphic dimensional value, the graphic data processing result judging and selecting function in both the X direction and Y direction (a step S3) for the respective graphic data processing areas. Namely, the CPU judges as the micro graphic when the dimension of a basic graphic after the elimination of duplication and tone reversal processes is no larger than the micro graphic dimensional value, compares the two by determining the sum of such micro graphics, for example, in the X, Y directions and selects the graphic data submitted to the elimination of duplication and tone reversal process for the direction with smaller value. The CUP further performs prescribed processing (steps S4, S5) of this graphic data to complete the production of drawing data.
摘要翻译：一种用于通过在生产要输入到带电粒子束描绘装置的绘图数据时减少微图形的生成来防止尺寸精度的劣化的系统。 CPU将设计布局数据分割为图形数据处理区域（步骤S1），并执行各图形数据处理区域的X方向和Y方向上的复制和色调反转处理的消除（步骤S2A，S2B）。另外，在各图形数据处理区域的X方向和Y方向（步骤S3）中，参照微图形维度值执行图形数据处理结果判定选择功能。即，当消除复制和色调反转处理之后的基本图形的尺寸不大于微图形尺寸值时，CPU判断为微图形，通过确定这样的微图形的总和来比较两者，例如，在X，Y方向上选择提取的图形数据，以消除重复和色调反转过程的方向，具有较小的值。 CUP进一步执行该图形数据的规定处理（步骤S4，S5）以完成绘图数据的制作。

6. 发明授权

US5086398A Electron beam exposure method 失效
标题翻译：电子束曝光法
公开(公告)号：US5086398A
公开(公告)日：1992-02-04
申请号：US497915
申请日：1990-03-23
申请人： Koichi Moriizumi
发明人： Koichi Moriizumi
IPC分类号： H01L21/027 , G03F7/20 , H01J37/302
CPC分类号： H01J37/3026 , G03F7/2061 , H01J2237/31769
摘要： An electron beam exposure method incorporating a proximity effect correction for a pattern including large-area drawing patterns and small-area drawing patterns. The method includes dividing each large-area drawing pattern into a plurality of unit patterns and calculating the optimum electron beam exposure for each unit pattern and for each small-area drawing pattern. The calculation includes a proximity effect correction for each unit pattern and each small-area drawing pattern adjacent unit patterns having the same calculated exposures are merged into larger areas and drawing data based on the merged unit patterns, the unit patterns not merged, and the small-area drawing patterns is generated. The pattern is exposed to an electron beam that is controlled in accordance with the drawing data.
摘要翻译：一种电子束曝光方法，包括对包括大面积绘制图案和小面积绘制图案的图案的邻近效应校正。该方法包括将每个大面积绘制图形分成多个单位图形，并计算每个单位图案和每个小面积绘制图案的最佳电子束曝光。该计算包括对于每个单位图案的邻近效应校正，并且具有相同计算曝光的每个小区域绘制图案相邻单元图案被合并到较大区域中，并且基于合并的单位图案绘制数据，未合并的单位图案和小 - 绘制图形生成。该图案暴露于根据图纸数据进行控制的电子束。

7. 发明授权

US06343370B1 Apparatus and process for pattern distortion detection for semiconductor process and semiconductor device manufactured by use of the apparatus or process 有权
标题翻译：用于通过使用该装置或工艺制造的半导体工艺和半导体器件的图案失真检测的装置和工艺
公开(公告)号：US06343370B1
公开(公告)日：2002-01-29
申请号：US09203582
申请日：1998-12-02
申请人： Hironobu Taoka , Koichi Moriizumi
发明人： Hironobu Taoka , Koichi Moriizumi
IPC分类号： G06F1750
CPC分类号： G03F1/36 , G03F7/70433 , G03F7/70441 , G03F7/705
摘要： A finished pattern that will be formed based on a design layout pattern in a semiconductor manufacturing process is predicted, and the outline of the predicted finished pattern is converted into a polygon. On the other hand, test reference patterns are formed based on the design layout pattern. A pattern distortion in the predicted finished pattern is detected by comparing the polygonized predicted finished pattern with the test referencepatterns. In converting the predicted finished pattern into a polygon, the number of apices of the polygon is reduced. Two kinds of test reference patterns are formed: an upper limit test reference pattern obtained by reducing the design layout pattern and defining an allowable upper limit and a lower limit test reference pattern obtained by enlarging the design layout pattern and defining an allowable lower limit.
摘要翻译：预测将在半导体制造工艺中基于设计布图图案形成的成品图案，并将预测的完成图案的轮廓转换为多边形。另一方面，基于设计布局图形形成测试参考图案。通过将多边形预测完成图案与测试参考图案进行比较来检测预测完成图案中的图案失真。在将预测的完成图案转换成多边形时，多边形的顶点的数量减少。形成两种测试参考图案：通过减小设计布局图案并定义通过扩大设计布局图案并定义允许下限而获得的允许上限和下限测试参考图案而获得的上限测试参考图案。

8. 发明授权

US06069971A Pattern comparison inspection system and method employing gray level bit map 失效
标题翻译：模式比较检验系统和采用灰度位图的方法
公开(公告)号：US06069971A
公开(公告)日：2000-05-30
申请号：US866244
申请日：1997-06-02
申请人： Makoto Kanno , Koichi Moriizumi
发明人： Makoto Kanno , Koichi Moriizumi
IPC分类号： H01L21/027 , G03F1/00 , G06F17/50 , H01J37/302 , G06K9/00
CPC分类号： G03F1/20 , G03F1/84 , H01J37/3026 , H01J2237/3175
摘要： A pattern comparison inspection system includes: an occupancy calculating portion for dividing pattern data into pixel regions and calculating a ratio of divided pattern data to a pixel region; a gray level bit map generating portion for generating a gray level bit map based on the ratio of the divided pattern data; and a bit map comparing portion for making a comparison between a gray level bit map for design pattern data and a gray level bit map for pattern data for an electron beam patterning system both generated by the occupancy calculating portion and the gray level bit map generating portion to determine whether the pattern data for an electron beam patterning system matches the design pattern data.
摘要翻译：模式比较检查系统包括：占用计算部分，用于将图案数据分割成像素区域并计算分割图案数据与像素区域的比率; 灰度级位图生成部，用于基于分割图案数据的比率生成灰度位图; 以及位图比较部分，用于在由占用计算部分和灰度位图生成部分生成的用于设计图案数据的灰度位图和用于电子束图案化系统的图案数据的灰度位图之间进行比较以确定电子束图案形成系统的图案数据是否与设计图案数据匹配。

9. 发明授权

US6088520A Method of producing highly precise charged beam drawing data divided into plurality of drawing fields 失效
标题翻译：制造分割成多个绘图场的高精度带电束图的数据的方法
公开(公告)号：US6088520A
公开(公告)日：2000-07-11
申请号：US971132
申请日：1997-11-13
申请人： Hironobu Taoka , Kinya Kamiyama , Koichi Moriizumi
发明人： Hironobu Taoka , Kinya Kamiyama , Koichi Moriizumi
IPC分类号： G03F1/68 , G03F1/70 , G06F17/50 , H01J37/302 , H01L21/027
CPC分类号： H01J37/3026 , H01J2237/31762 , H01J2237/31764
摘要： A method of producing charged beam drawing data includes a basic figure processing step of performing a basic figure processing to design layout data to output basic figure data, a first segmenting step of converting the basic figure data as if segmenting a basic figure over a boundary of a figure processing region in the basic figure data by the boundary, a first searching step of searching a minute figure to draw which satisfies a prescribed size condition among the figures produced by segmenting in said first segmenting step, a restoring step of integrating the minute figure to draw searched by said first searching step and a figure adjacent to the minute figure, and performing a further basic figure processing to restore the figures in said basic figure data, an allocating step of allocating the figures restored by said restoring step to drawing fields, and a step of converting the figures allocated by the allocating step to charged beam drawing data.
摘要翻译：一种产生带电波束绘图数据的方法包括：基本图形处理步骤，执行基本图形处理以设计布局数据以输出基本图形数据;第一分割步骤，转换基本图形数据，如同将基本图形分割为边界上的基本图形基于边界的基本图形数据中的图形处理区域，在所述第一分割步骤中通过分割生成的图形中搜索满足规定尺寸条件的微小图形的第一搜索步骤，通过所述第一搜索步骤绘制搜索和与所述微小图形相邻的图形，以及执行进一步的基本图形处理以恢复所述基本图形数据中的图形;分配步骤，将由所述恢复步骤恢复的图形分配给绘制区域，以及将由分配步骤分配的图形转换为带电波束绘制数据的步骤。

10. 发明授权

US5812412A Charged beam pattern data generating method and a charged beam pattern data generating apparatus 失效
标题翻译：带电波束图案数据生成方法和带电波束图案数据生成装置
公开(公告)号：US5812412A
公开(公告)日：1998-09-22
申请号：US535729
申请日：1995-09-28
申请人： Koichi Moriizumi , Kinya Kamiyama , Makoto Kanno , Hironobu Taoka , Hiroomi Nakao , Kazuhiro Yamazaki
发明人： Koichi Moriizumi , Kinya Kamiyama , Makoto Kanno , Hironobu Taoka , Hiroomi Nakao , Kazuhiro Yamazaki
IPC分类号： H01L21/027 , G06F17/50 , H01J37/302
CPC分类号： H01J37/3026 , H01J2237/30494
摘要： A charged beam pattern data generating method for generating high quality pattern data from the circuit layout design data of a semiconductor device for use by a charged beam drawing apparatus in the production of resist patterns or other semiconductor device manufacturing processes.
摘要翻译：一种带电波束图案数据生成方法，用于从制造抗蚀剂图案或其它半导体器件制造工艺中的带电波束牵引装置的半导体器件的电路布局设计数据生成高质量图案数据。

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