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1. 发明授权

US6159862A Semiconductor processing method and system using C.sub.5 F.sub.8 失效
标题翻译：半导体处理方法和系统采用C5F8
公开(公告)号：US6159862A
公开(公告)日：2000-12-12
申请号：US87848
申请日：1998-06-01
申请人： Masahiro Yamada , Youbun Ito , Kouichiro Inazawa , Abron Toure , Kunihiko Hinata , Hiromi Sakima
发明人： Masahiro Yamada , Youbun Ito , Kouichiro Inazawa , Abron Toure , Kunihiko Hinata , Hiromi Sakima
IPC分类号： H01L21/311 , H01L21/768 , H01L21/30
CPC分类号： H01L21/76802 , H01L21/31116 , H01L21/76804 , H01L21/7681 , H01L21/76897 , Y02C20/30 , Y02P70/605
摘要： A method and system for processing a substrate in the presence of high purity C.sub.5 F.sub.8. When processing oxides and dielectrics in a gas plasma processing system, C.sub.5 F.sub.8 is used in combination with a carrier gas (e.g., Ar) and one or more of CO and O.sub.2. When using a silicon nitride (Si.sub.x N.sub.y) layer as an etch stop, effective etching is performed due to the selectivity of oxides versus silicon nitride. The method is used when etching down to self-aligning contacts and other layers. The method may be practiced with or without using an anti-reflective coating underneath the photoresist layer.
摘要翻译：在高纯度C5F8存在下处理基材的方法和系统。当在气体等离子体处理系统中处理氧化物和电介质时，C5F8与载气（例如Ar）和CO和O 2中的一种或多种组合使用。当使用氮化硅（SixNy）层作为蚀刻停止时，由于氧化物对氮化硅的选择性而进行有效的蚀刻。当蚀刻到自对准触点和其他层时，使用该方法。可以使用或不使用光致抗蚀剂层下方的抗反射涂层来实施该方法。

2. 发明授权

US06602435B1 Etching method 有权
标题翻译：蚀刻方法
公开(公告)号：US06602435B1
公开(公告)日：2003-08-05
申请号：US09582457
申请日：2000-06-26
申请人： Masahiro Yamada , Youbun Ito , Kouichiro Inazawa
发明人： Masahiro Yamada , Youbun Ito , Kouichiro Inazawa
IPC分类号： H01L213065
CPC分类号： H01L21/76802 , H01L21/31116 , H01L21/76804 , Y02P70/605
摘要： A processing gas constituted of C5F8, O2 and Ar achieving a flow rate ratio of 1≦C5F8 flow rate/O2 flow rate≦1.625 is supplied into a processing chamber 102 of an etching apparatus 100 and the atmosphere pressure is set within a range of 45 mTorr˜50 mTorr. High-frequency power is applied to a lower electrode 110 sustained within a temperature range of 20° C.˜40° C. on which a wafer W is mounted to raise the processing gas to plasma, and using the plasma, a contact hole 210 is formed at an SiO2 film 208 on an SiNx film 206 formed at the wafer W. The use of C5F8 and O2 makes it possible to form a contact hole 210 achieving near-perfect verticality at the SiO2 film 208 and also improves the selection ratio of the SiO2 film 208 relative to the SiNx film 206. C5F8, which becomes decomposed over a short period of time when released into the atmosphere, does not induce the greenhouse effect.
摘要翻译：由C5F8，O2和Ar构成的处理气体，将流量比为1 <= C5F8流量/ O2流量<= 1.625而提供到蚀刻装置100的处理室102中，将气氛压力设定在一定范围内 45 mTorr〜50 mTorr。将高频电力施加到在20℃〜40℃的温度范围内保持的下部电极110，在该温度范围内安装有晶片W，以将处理气体升至等离子体，并且使用等离子体，接触孔210 在形成在晶片W上的SiNx膜206上的SiO 2膜208上形成。使用C5F8和O2可以形成接触孔210，其在SiO 2膜208上实现接近完全的垂直度，并且还提高了选择比 SiO 2膜208相对于SiNx膜206.当释放到大气中时，在短时间内分解的C5F8不会引起温室效应。

3. 发明授权

US06465359B2 Etchant for use in a semiconductor processing method and system 失效
标题翻译：用于半导体处理方法和系统的蚀刻剂
公开(公告)号：US06465359B2
公开(公告)日：2002-10-15
申请号：US09398472
申请日：1999-09-17
申请人： Masahiro Yamada , Youbun Ito , Kouichiro Inazawa , Abron Toure , Kunihiko Hinata , Hiromi Sakima
发明人： Masahiro Yamada , Youbun Ito , Kouichiro Inazawa , Abron Toure , Kunihiko Hinata , Hiromi Sakima
IPC分类号： H01L21302
CPC分类号： H01L21/76802 , H01L21/31116 , H01L21/76804 , H01L21/7681 , H01L21/76897 , Y02C20/30 , Y02P70/605
摘要： A method and system for processing a substrate in the presence of high purity C5F8. When processing oxides and dielectrics in a gas plasma processing system, C5F8 is used in combination with a carrier gas (e.g., Ar) and one or more of CO and O2. When using a silicon nitride (SixNy) layer as an etch stop, effective etching is performed due to the selectivity of oxides versus silicon nitride. The method is used when etching down to self-aligning contacts and other layers. The method may be practiced with or without using an anti-reflective coating underneath the photoresist layer.
摘要翻译：在高纯度C5F8存在下处理基材的方法和系统。当在气体等离子体处理系统中处理氧化物和电介质时，C5F8与载气（例如Ar）和CO和O 2中的一种或多种组合使用。当使用氮化硅（SixNy）层作为蚀刻停止时，由于氧化物对氮化硅的选择性而进行有效的蚀刻。当蚀刻到自对准触点和其他层时，使用该方法。可以使用或不使用光致抗蚀剂层下方的抗反射涂层来实施该方法。

4. 发明授权

US06753263B1 Etching method 有权
标题翻译：蚀刻方法
公开(公告)号：US06753263B1
公开(公告)日：2004-06-22
申请号：US09700785
申请日：2001-02-05
申请人： Youbun Ito , Masahiro Yamada , Kouichiro Inazawa
发明人： Youbun Ito , Masahiro Yamada , Kouichiro Inazawa
IPC分类号： H01L21302
CPC分类号： H01L21/31116 , H01J37/32091 , H01J2237/3347 , H01L21/76802 , H01L21/76829
摘要： A lower electrode 106 with the temperature at its mounting surface set at 40° C. is provided inside a processing chamber 104 of an etching apparatus 100. After a wafer W is placed on the lower electrode 106, a processing gas with its gas composition and gas flow rate expressed as C4F8: CH2F2: Ar=7:4:500 (sccm) is induced into the processing chamber 104 while sustaining the pressure of the atmosphere inside the processing chamber 104 at 50 (mTorr). High-frequency power at 1500 (W) with the frequency at 13.56 (MHz) is applied to the lower electrode 106 to generate plasma. With the plasma thus generated, a carbon film is formed at shoulder 207 of an SiNx film layer 206 exposed inside a contact hole 210 and, at the same time, accumulation of carbon at the bottom of the contact hole 210 is prevented, to form a contact hole 210 achieving a high aspect ratio while preventing damage to the SiNx film layer.
摘要翻译：在蚀刻装置100的处理室104的内部设置有其安装面设定为40℃的温度的下部电极106.在将晶片W配置在下部电极106上之后，具有气体成分的处理气体和气体流速表示为C4F8：CH2F2：Ar = 7：4：500（sccm）被引入处理室104，同时在50（mTorr）内保持处理室104内的气氛的压力。将在13.56（MHz）频率的1500（W）的高频功率施加到下电极106以产生等离子体。利用这样产生的等离子体，在暴露在接触孔210内的SiNx膜层206的肩部207处形成碳膜，同时防止了在接触孔210的底部积聚碳，形成接触孔210实现高纵横比，同时防止对SiNx膜层的损伤。

5. 植物专利

USPP31612P2 Mandevilla plant named ‘Sunpa 5223’ 有权
公开(公告)号：USPP31612P2
公开(公告)日：2020-03-31
申请号：US16350643
申请日：2018-12-14
申请人： Tomoya Misato , Masahiro Yamada
发明人： Tomoya Misato , Masahiro Yamada
IPC分类号： A01H5/02 , A01H6/08
摘要： A new and distinct cultivar of Mandevilla plant named ‘Sunpa 5223’, characterized by its climbing plant habit; vigorous growth habit; freely branching habit; early and freely flowering habit; long flowering period; and small bright red-colored flowers.

6. 植物专利

USPP28631P3 Catharanthus plant named ‘Suncatfe 185’ 有权
公开(公告)号：USPP28631P3
公开(公告)日：2017-11-14
申请号：US14999206
申请日：2016-04-11
申请人： Masahiro Yamada
发明人： Masahiro Yamada
IPC分类号： A01H5/02
摘要： A new and distinct cultivar of Catharanthus plant named ‘Suncatfe 185’, characterized by its compact, upright to outwardly spreading and uniformly mounding plant habit; vigorous growth habit; freely basal branching habit; freely flowering habit; long flowering period; relatively small star-shaped pink-colored flowers with a distinct red purple-colored eye zone; and good garden performance.

7. 植物专利

US20170295691P1 Catharanthus plant named 'SUNCATFE 43' 有权
公开(公告)号：US20170295691P1
公开(公告)日：2017-10-12
申请号：US14999207
申请日：2016-04-11
申请人： Masahiro Yamada
发明人： Masahiro Yamada
IPC分类号： A01H5/02
摘要： A new and distinct cultivar of Catharanthus plant named ‘Suncatfe 43’, characterized by its compact, upright to outwardly spreading and uniformly mounding plant habit; vigorous growth habit; freely basal branching habit; freely flowering habit; long flowering period; relatively small star-shaped white-colored flowers; and good garden performance.

8. 植物专利

USPP27477P3 Catharanthus plant named ‘Suncatha 2439’ 有权
标题翻译：长春花植物名为“Suncatha 2439”
公开(公告)号：USPP27477P3
公开(公告)日：2016-12-20
申请号：US14545153
申请日：2015-03-31
申请人： Masahiro Yamada
发明人： Masahiro Yamada
IPC分类号： A01H5/02
CPC分类号： A01H5/02
摘要： A new and distinct cultivar of Catharanthus plant named ‘Suncatha 2439’, characterized by its upright to outwardly spreading and mounding plant habit; vigorous growth habit; freely basal branching habit; freely flowering habit; long flowering period; relatively small dark red purple-colored flowers; and good garden performance.
摘要翻译：一个新的和独特的长春花植物名为“Suncatha 2439”，其特点是直立向外扩散和堆积植物习性; 生长习惯旺盛自由基础分支习惯; 自由开花的习惯; 开花期长相对较小的深红色紫色花朵; 和良好的花园表演。

9. 植物专利

US20160295766P1 Catharanthus plant named 'Suncatha 2439' 有权
标题翻译：长春花植物名为“Suncatha 2439”
公开(公告)号：US20160295766P1
公开(公告)日：2016-10-06
申请号：US14545153
申请日：2015-03-31
申请人： Masahiro Yamada
发明人： Masahiro Yamada
IPC分类号： A01H5/00
CPC分类号： A01H5/02
摘要： A new and distinct cultivar of Catharanthus plant named ‘Suncatha 2439’, characterized by its upright to outwardly spreading and mounding plant habit; vigorous growth habit; freely basal branching habit; freely flowering habit; long flowering period; relatively small dark red purple-colored flowers; and good garden performance.
摘要翻译：一个新的和独特的长春花植物名为“Suncatha 2439”，其特点是直立向外扩散和堆积植物习性; 生长习惯旺盛自由基础分支习惯; 自由开花的习惯; 开花期长相对较小的深红色紫色花朵; 和良好的花园表演。

10. 发明授权

US09110367B2 Stereoscopic imaging apparatus 有权
标题翻译：立体成像装置
公开(公告)号：US09110367B2
公开(公告)日：2015-08-18
申请号：US13287712
申请日：2011-11-02
申请人： Masahiro Yamada , Sunao Aoki
发明人： Masahiro Yamada , Sunao Aoki
IPC分类号： G02B21/22 , G03B35/08 , G02B27/22 , H04N13/02
CPC分类号： G02B23/2415 , A61B1/00188 , A61B1/00193 , G02B21/22 , G02B27/2214 , G03B35/08 , G03B35/10 , H04N13/239
摘要： A stereoscopic imaging apparatus includes: an objective optical system having a function of imaging a subject as a real image or a virtual image; and plural imaging optical systems that image plural subject luminous fluxes output from different paths of the objective optical system again as parallax images using plural independent optical systems, wherein, in the case where a focal length value when the objective optical system images the subject as the real image is positive and the focal length value when the objective optical system images the subject as the virtual image is negative, a focal distance (f) of the objective optical system and a distance (L) from a rear principal point of the objective optical system to a front principal point of the imaging optical system is set to values that satisfy the following equation |f/(L−f)|≦1.
摘要翻译：立体成像装置包括：物镜光学系统，其具有将被摄体成像为实像或虚像; 以及多个成像光学系统，其将从物镜光学系统的不同路径输出的多个被摄体光通量再次用作使用多个独立光学系统的视差图像，其中，在物镜光学系统将被摄体成像为物镜光学系统的焦点距离（f）和物镜光学系统的后方主点的距离（L）在物镜光学系统对被摄体进行图像处理时的焦距值为正，系统到成像光学系统的前主要点被设置为满足以下等式| f /（L-f）|＆nlE; 1的值。

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