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1. 发明授权

US06495418B2 Method of manufacturing a semiconductor device having a capacitor 失效
标题翻译：制造具有电容器的半导体器件的方法
公开(公告)号：US06495418B2
公开(公告)日：2002-12-17
申请号：US09754120
申请日：2001-01-05
申请人： Masahiro Shimizu , Takashi Miyajima , Toshinori Morihara
发明人： Masahiro Shimizu , Takashi Miyajima , Toshinori Morihara
IPC分类号： H01L218242
CPC分类号： H01L28/91 , H01L21/3212 , H01L27/10814 , H01L27/10852 , H01L28/84 , Y10S438/964
摘要： A method of manufacturing a semiconductor device is provided. A polysilicon film and a rough-surfaced polysilicon film are formed on inter-layer insulating film including side and bottom surfaces of openings formed in inter-layer insulating film. A photoresist is formed on the rough-surfaced polysilicon film. The photoresist, the rough-surfaced polysilicon film and the polysilicon film that are located on the top surface of inter-layer insulating film are removed by the CMP method. The polysilicon film and rough-surfaced polysilicon film are etched in a predetermined atmosphere to make the position of the top end of storage nodes lower than the top surface of inter-layer insulating film.
摘要翻译：提供一种制造半导体器件的方法。在层间绝缘膜上形成多晶硅膜和粗糙表面的多晶硅膜，该层间绝缘膜包括在层间绝缘膜中形成的开口的侧面和底面。在粗糙表面的多晶硅膜上形成光致抗蚀剂。通过CMP方法去除位于层间绝缘膜的顶表面上的光致抗蚀剂，粗糙表面多晶硅膜和多晶硅膜。在预定的气氛中蚀刻多晶硅膜和粗糙表面的多晶硅膜，使存储节点的顶端的位置比层间绝缘膜的上表面低。

2. 发明授权

US06756267B2 Method of manufacturing a semiconductor device including a capacitor with a roughened-surface electrode 失效
标题翻译：制造包括具有粗糙表面电极的电容器的半导体器件的方法
公开(公告)号：US06756267B2
公开(公告)日：2004-06-29
申请号：US10302857
申请日：2002-11-25
申请人： Masahiro Shimizu , Takashi Miyajima , Toshinori Morihara
发明人： Masahiro Shimizu , Takashi Miyajima , Toshinori Morihara
IPC分类号： H01L218242
CPC分类号： H01L28/91 , H01L21/3212 , H01L27/10814 , H01L27/10852 , H01L28/84 , Y10S438/964
摘要： A method of manufacturing a semiconductor device is provided. A polysilicon film and a rough-surfaced polysilicon film are formed on inter-layer insulating film including side and bottom surfaces of openings formed in inter-layer insulating film. A photoresist is formed on the rough-surfaced polysilicon film. The photoresist, the rough-surfaced polysilicon film and the polysilicon film that are located on the top surface of inter-layer insulating film are removed by the CMP method. The polysilicon film and rough-surfaced polysilicon film are etched in a predetermined atmosphere to make the position of the top end of storage nodes lower than the top surface of inter-layer insulating film.
摘要翻译：提供一种制造半导体器件的方法。在层间绝缘膜上形成多晶硅膜和粗糙表面的多晶硅膜，该层间绝缘膜包括在层间绝缘膜中形成的开口的侧面和底面。在粗糙表面的多晶硅膜上形成光致抗蚀剂。通过CMP方法去除位于层间绝缘膜的顶表面上的光致抗蚀剂，粗糙表面多晶硅膜和多晶硅膜。在预定的气氛中蚀刻多晶硅膜和粗糙表面的多晶硅膜，使存储节点的顶端的位置比层间绝缘膜的上表面低。

3. 发明授权

US5914071A Difluoroethylene compounds and liquid crystal compositions containing them 失效
标题翻译：二氟乙烯化合物和含有它们的液晶组合物
公开(公告)号：US5914071A
公开(公告)日：1999-06-22
申请号：US833473
申请日：1997-04-07
申请人： Seiji Shinya , Osamu Yokokouji , Takashi Miyajima , Hidemasa Koh , Katsutoshi Machida
发明人： Seiji Shinya , Osamu Yokokouji , Takashi Miyajima , Hidemasa Koh , Katsutoshi Machida
IPC分类号： C07C17/269 , C07C17/361 , C07C22/00 , C07C22/08 , C07C25/24 , C07C43/225 , C07C69/76 , C07C255/50 , C07D239/26 , C09K19/04 , C09K19/30 , C09K19/34
CPC分类号： C07D239/26 , C07C17/269 , C07C17/361 , C07C22/00 , C07C22/08 , C07C25/24 , C07C255/50 , C07C43/225 , C07C69/76 , C09K19/0403 , C09K19/3048 , C09K19/3059 , C09K19/3066 , C09K19/3068 , C09K19/3444 , C09K19/3458 , C09K2019/0407 , C09K2019/0444 , C09K2019/0459
摘要： A difluoroethylene compound of the following formula (1) having a liquid crystal property is provided:R.sup.1 --(A.sup.1).sub.m --Y.sup.1 --A.sup.2 --CF.dbd.CF--A.sup.3 --Y.sup.2 --(A.sup.4).sub.n --R.sup.2 (1)wherein A.sup.1 --A.sup.4, Y.sup.1, Y.sup.2, R.sup.1, R.sup.2, m and n are as defined herein.
摘要翻译：提供具有液晶性的下式（1）的二氟乙烯化合物：R1-（A1）m-Y1-A2-CF = CF-A3-Y2-（A4）n-R2（1）其中A1-A4 ，Y1，Y2，R1，R2，m和n如本文所定义。

4. 发明授权

US5784803A Oil removing method for a pipe coil 失效
标题翻译：管线排油方法
公开(公告)号：US5784803A
公开(公告)日：1998-07-28
申请号：US755500
申请日：1996-11-22
申请人： Katsumasa Toyoda , Takashi Miyajima , Yoshihiro Umeda
发明人： Katsumasa Toyoda , Takashi Miyajima , Yoshihiro Umeda
IPC分类号： B21C37/30 , B21C43/00 , C21D9/08 , C23G5/00 , F26B7/00
CPC分类号： C23G5/00 , B21C37/30 , B21C43/00 , C21D9/08
摘要： A pipe coil is heated in the furnace of a heat treatment apparatus. The oil adhered to the inside of the pipe is vaporized by this heating. In this state the oil removing gas is fed at one end into the pipe which gas is in the high temperature enough to maintain the vaporizing condition of the oil. The vaporized oil within the pipe is discharged by the feeding of the gas at the other end of the pipe while the oil is in the vaporized state.
摘要翻译：管线圈在热处理装置的炉中被加热。通过该加热使附着在管内部的油气化。在这种状态下，除油气体在一端被供入管中，气体处于足够高的温度以保持油的汽化状态。当油处于汽化状态时，通过管道另一端的气体供给，排出管内的汽化油。

5. 发明授权

US5516949A Difluoroethylene compounds and liquid crystal compositions containing them 失效
标题翻译：二氟乙烯化合物和含有它们的液晶组合物
公开(公告)号：US5516949A
公开(公告)日：1996-05-14
申请号：US29602
申请日：1993-03-11
申请人： Seiji Shinya , Osamu Yokokouji , Takashi Miyajima , Hidemasa Koh , Katsutoshi Machida
发明人： Seiji Shinya , Osamu Yokokouji , Takashi Miyajima , Hidemasa Koh , Katsutoshi Machida
IPC分类号： C07C17/269 , C07C17/361 , C07C22/00 , C07C22/08 , C07C25/24 , C07C43/225 , C07C69/76 , C07C255/50 , C07D239/26 , C09K19/04 , C09K19/30 , C09K19/34 , C07C19/08
CPC分类号： C07D239/26 , C07C17/269 , C07C17/361 , C07C22/00 , C07C22/08 , C07C25/24 , C07C255/50 , C07C43/225 , C07C69/76 , C09K19/0403 , C09K19/3048 , C09K19/3059 , C09K19/3066 , C09K19/3068 , C09K19/3444 , C09K19/3458 , C09K2019/0407 , C09K2019/0444 , C09K2019/0459
摘要： A difluoroethylene compound of the following formula (1):R.sup.1 --(A.sup.1).sub.m --Y.sup.1 --A.sup.2 --CF.dbd.CF--A.sup.3 --Y.sup.2 --(A.sup.4).sub.n --R.sup.2 (1)wherein A.sup.3 is a trans-1,4-cyclohexylene group, and each of A.sup.1, A.sup.2 and A.sup.4, which are independent from one another, is a trans-1,4-cyclohexylene group or a 1,4-phenylene group, wherein each of such cyclic groups is unsubstituted or substituted by one or more halogen atoms or cyano groups, one or more .dbd.CH-- groups constituting rings of such cyclic groups may be substituted by nitrogen atoms, and one or more --CH.sub.2 -- groups constituting rings of such cyclic groups may be substituted by oxygen atoms or sulfur atoms.
摘要翻译：下式（1）的二氟乙烯化合物：R1-（A1）m-Y1-A2-CF = CF-A3-Y2-（A4）n-R2（1）其中A3是反式-1,4-亚环己基基团，彼此独立的A1，A2和A4中的每一个是反-1,4-亚环己基或1,4-亚苯基，其中每个这样的环状基团是未取代的或被一个或多个更多的卤素原子或氰基，构成环状基团的环的一个或多个= CH-基团可以被氮原子取代，并且构成这种环状基团的环的一个或多个-CH 2 - 基可被氧原子或硫原子取代。

6. 发明授权

US06567260B1 Capacitor and semiconductor memory 失效
标题翻译：电容和半导体存储器
公开(公告)号：US06567260B1
公开(公告)日：2003-05-20
申请号：US10134632
申请日：2002-04-30
申请人： Takashi Miyajima
发明人： Takashi Miyajima
IPC分类号： H01G4228
CPC分类号： H01L28/84 , H01L21/31604 , H01L27/10814 , H01L27/10855 , H01L28/91
摘要： In order to reduce a leakage current of a storage node (120), a rough semiconductor film (108) provided in the storage node (120) includes a portion (108a) forming a side face of the storage node (120) and a portion (108b) forming a bottom of the storage node (120). Each of particles contributing to the roughness of the portion (108b) forming the bottom of the storage node (120) has a diameter smaller than a diameter of each of particles contributing to the roughness of the portion (108a) forming the side face of the storage node (120).
摘要翻译：为了减少存储节点（120）的泄漏电流，设置在存储节点（120）中的粗略半导体膜（108）包括形成存储节点（120）的侧面的部分（108a）和存储节点（108b）形成存储节点（120）的底部。有助于形成存储节点（120）的底部的部分（108b）的粗糙度的每个颗粒的直径小于有助于形成所述存储节点（120）的侧面的部分（108a）的粗糙度的每个颗粒的直径存储节点（120）。

7. 发明授权

US06521933B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06521933B2
公开(公告)日：2003-02-18
申请号：US09725852
申请日：2000-11-30
申请人： Takashi Miyajima , Masahiko Takeuchi
发明人： Takashi Miyajima , Masahiko Takeuchi
IPC分类号： H01L27108
CPC分类号： H01L27/10894 , H01L27/10852
摘要： In the drawn-out interconnection structure of the present invention, a storage node (SN) groove extending from a region, and a groove-shape drawn-out electrode is formed on the inner wall of storage node (SN) groove. An extended pad electrode portion extending from groove-shape drawn-out electrode is provided above storage node (SN) groove. Also provided is a contact plug that penetrates through extended pad electrode portion and that connects aluminum interconnection and extended pad electrode portion in a layer above extended pad electrode portion. With this arrangement, the structure of an interconnection drawn from an electrode of a semiconductor device can be obtained which allows the production of a cell transistor TEG capable of performing a reliable and stable measurement of the cell transistor characteristics.
摘要翻译：在本发明的拉出互连结构中，在存储节点（SN）槽的内壁上形成有从区域延伸的存储节点（SN）槽和槽形引出电极。从槽形拉出电极延伸的延伸焊盘电极部分设置在存储节点（SN）槽的上方。还提供一种接触插塞，其穿过延伸的焊盘电极部分并且将铝互连和延伸焊盘电极部分连接在延伸的焊盘电极部分上方的层中。通过这种布置，可以获得从半导体器件的电极拉出的互连结构，其允许制造能够执行电池晶体管特性的可靠和稳定测量的电池晶体管TEG。

8. 发明授权

US08723244B2 Semiconductor device having storage electrode and manufacturing method thereof 有权
标题翻译：具有存储电极的半导体器件及其制造方法
公开(公告)号：US08723244B2
公开(公告)日：2014-05-13
申请号：US12458912
申请日：2009-07-27
申请人： Takashi Miyajima
发明人： Takashi Miyajima
IPC分类号： H01L27/108
CPC分类号： H01L28/60 , H01L21/76804 , H01L21/76895 , H01L23/53257 , H01L27/0688 , H01L27/10817 , H01L27/10852 , H01L27/10855 , H01L28/90 , H01L28/91 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first storage electrode, a second storage electrode, a first landing pad, a capacitive insulating film, and a plate electrode. The second storage electrode is arranged above the first storage electrode. The first landing pad is arranged between a top surface of the first storage electrode and a bottom surface of the second storage electrode. The first landing pad connects the first storage electrode and the second storage electrode. The first landing pad has a first landing surface larger than the bottom surface of the second storage electrode. The second storage electrode is placed on the first landing surface. The capacitive insulating film is laminated on the first and second storage electrodes and on an outer circumferential surface of the first landing pad. The plate electrode contacts the capacitive insulating film.
摘要翻译：半导体器件包括第一存储电极，第二存储电极，第一着陆焊盘，电容绝缘膜和平板电极。第二存储电极设置在第一存储电极的上方。第一着陆垫布置在第一存储电极的顶表面和第二存储电极的底表面之间。第一着陆垫连接第一存储电极和第二存储电极。第一着陆垫具有比第二存储电极的底表面大的第一着陆表面。第二存储电极放置在第一着陆表面上。电容绝缘膜层压在第一和第二存储电极上以及第一着陆焊盘的外周表面上。平板电极接触电容绝缘膜。

9. 发明申请

US20100176486A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100176486A1
公开(公告)日：2010-07-15
申请号：US12654929
申请日：2010-01-08
申请人： Takashi Miyajima , Shigeru Sugioka , Kazushi Komeda , Takashi Miyamura , Kohei Inoue
发明人： Takashi Miyajima , Shigeru Sugioka , Kazushi Komeda , Takashi Miyamura , Kohei Inoue
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L27/10894 , H01L27/0207 , H01L27/10852 , H01L28/91
摘要： A semiconductor device includes a memory cell region and a peripheral circuit region. The memory cell region includes a first region and a second region surrounding the first region. The first region includes a plurality of first electrodes, a plurality of first support portions, and a second support portion. The plurality of first electrodes upwardly extends. The plurality of first support portions upwardly extends along the plurality of first electrodes. Each of the plurality of first support portions mechanically supports corresponding one of the plurality of first electrodes. The second support portion contacts with the plurality of the first support portions. The second support portion connects between each of the plurality of first electrodes.
摘要翻译：半导体器件包括存储单元区域和外围电路区域。存储单元区域包括第一区域和围绕第一区域的第二区域。第一区域包括多个第一电极，多个第一支撑部分和第二支撑部分。多个第一电极向上延伸。多个第一支撑部分沿着多个第一电极向上延伸。多个第一支撑部分中的每一个机械地支撑多个第一电极中的相应的一个。第二支撑部分与多个第一支撑部分接触。第二支撑部分连接在多个第一电极中的每一个之间。

10. 发明申请

US20050009346A1 Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20050009346A1
公开(公告)日：2005-01-13
申请号：US10724224
申请日：2003-12-01
申请人： Takashi Miyajima
发明人： Takashi Miyajima
IPC分类号： H01L21/8242 , H01L21/02 , H01L21/302 , H01L21/3213 , H01L21/461 , H01L27/108
CPC分类号： H01L28/65 , H01L21/32134 , H01L21/32135 , H01L28/90
摘要： Wet etching is performed on a storage electrode (7) made of ruthenium from above using periodic acid or a cerium ammonium nitrate solution. By using that kind of etching liquid, ruthenium as well as oxide films formed on the surface of the storage electrode (7) can be etched, causing the surface of the storage electrode (7) to be entirely etched. As a result, needle projections having been formed on the top surface of the storage electrode (7) are removed, rounding the top ends of the storage electrode (7). Consequently, the thickness of a dielectric film of a DRAM capacitor to be formed on the storage electrode (7) can be easily made uniform, allowing a reduction in leakage current of the capacitor.
摘要翻译：使用高碘酸或硝酸铈铵溶液对上述由钌制成的储存电极（7）进行湿式蚀刻。通过使用这种蚀刻液，可以蚀刻形成在存储电极（7）的表面上的钌以及氧化膜，使得存储电极（7）的表面被完全蚀刻。结果，已经形成在存储电极（7）的顶表面上的针突起被去除，围绕着存储电极（7）的顶端。因此，可以容易地使要形成在存储电极（7）上的DRAM电容器的电介质膜的厚度均匀，从而允许电容器的漏电流减小。

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