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1. 发明授权

US06636541B1 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US06636541B1
公开(公告)日：2003-10-21
申请号：US09516835
申请日：2000-03-02
申请人： Hisashi Nakayama , Masahiro Kito , Masato Ishino , Yasushi Matsui
发明人： Hisashi Nakayama , Masahiro Kito , Masato Ishino , Yasushi Matsui
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/3403 , H01S5/3409 , H01S5/3415
摘要： A semiconductor laser device includes a substrate, a p-type cladding layer and a n-type cladding layer provided on the substrate, and an active layer provided between the p-type cladding layer and the n-type cladding layer, having at least two barrier layers and at least two well layers, the barrier layers and the well layers being disposed alternately. Band offsets in a conduction band between the barrier layers and the well layers are provided so as to increase from the n-type cladding layer aide toward the p-type cladding layer side.
摘要翻译：半导体激光装置包括基板，设置在基板上的p型覆层和n型覆层，以及设置在p型覆层和n型覆层之间的有源层，具有至少两个阻挡层和至少两个阱层，阻挡层和阱层交替布置。阻挡层和阱层之间的导带中的带偏移被设置为从n型包覆层向p型包覆层侧增加。

2. 发明授权

US5339325A Strained multiple quantum well semiconductor laser and a method for producing the same 失效
标题翻译：应变多量子阱半导体激光器及其制造方法
公开(公告)号：US5339325A
公开(公告)日：1994-08-16
申请号：US101933
申请日：1993-08-04
申请人： Masahiro Kito , Yasushi Matsui
发明人： Masahiro Kito , Yasushi Matsui
IPC分类号： H01S5/00 , H01S5/042 , H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/34313 , H01S5/2275 , H01S5/3403 , H01S5/3406 , H01S5/3407 , H01S5/34306 , Y10S438/938
摘要： A strained multiple quantum well semiconductor laser including a semiconductor substrate, a multiple quantum well active layer including a plurality quantum well layers and a plurality of barrier layers, and a multilayer structure including the above multiple quantum well active layer is provided. Each barrier layer is interposed between two of the multiple quantum well active layers. The multilayer structure is formed upon the semiconductor substrate. Herein, at least one of the plurality of barrier layers is thicker than the other barrier layers, thereby serving as a layer absorbing strain which is stored in the barrier layers due to a difference between the lattice constant of semiconductor substrate and the lattice constant each quantum well layer.
摘要翻译：提供了包括半导体衬底的应变量子阱半导体激光器，包括多个量子阱层和多个势垒层的多量子阱活性层以及包括上述多量子阱活性层的多层结构。每个阻挡层插入在多个量子阱活性层中的两个之间。多层结构形成在半导体衬底上。这里，多个阻挡层中的至少一个比其他阻挡层厚，从而由于半导体衬底的晶格常数和每个量子之间的晶格常数之间的差异而被用作存储在势垒层中的层吸收应变井层。

3. 发明授权

US6151351A Distributed feedback semiconductor laser and method for producing the same 失效
标题翻译：分布式反馈半导体激光器及其制造方法
公开(公告)号：US6151351A
公开(公告)日：2000-11-21
申请号：US534959
申请日：1995-09-28
申请人： Masahiro Kito , Masato Ishino , Nobuyuki Otsuka , Yasushi Matsui , Shinji Nakamura
发明人： Masahiro Kito , Masato Ishino , Nobuyuki Otsuka , Yasushi Matsui , Shinji Nakamura
IPC分类号： H01L21/205 , H01S5/026 , H01S5/0625 , H01S5/12 , H01S5/125 , H01S5/20 , H01S5/227 , H01S5/323 , H01S5/343 , H01S3/085 , H01S3/19
CPC分类号： B82Y20/00 , H01L21/02392 , H01L21/0243 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02513 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01S5/0265 , H01S5/12 , H01S5/1228 , H01S5/125 , H01S5/06256 , H01S5/1231 , H01S5/2077 , H01S5/2081 , H01S5/2272 , H01S5/2275 , H01S5/32391 , H01S5/34306 , H01S5/3434 , H01S5/34373
摘要： In a distributed feedback semiconductor laser includes an InP substrate and a multiple layer structure formed on a main surface of the InP substrate, the multiple layer structure includes at least an active layer for emitting laser light and a periodical structure for distributed feedback of the laser light, and the periodical structure includes a plurality of semiconductor regions each having a triangular cross section in a direction perpendicular to the main surface of the InP substrate and parallel to a cavity length of the distributed feedback semiconductor laser, the triangular cross section projecting toward the InP substrate.
摘要翻译：在分布式反馈半导体激光器中包括InP衬底和形成在InP衬底的主表面上的多层结构，该多层结构至少包括用于发射激光的有源层和用于激光的分布反馈的周期性结构并且周期性结构包括多个半导体区域，每个半导体区域在垂直于InP衬底的主表面的方向上具有三角形横截面并且平行于分布式反馈半导体激光器的腔长度，三角形横截面朝向InP 基质。

4. 发明授权

US6107112A Distributed feedback semiconductor laser and method for producing the same 失效
公开(公告)号：US6107112A
公开(公告)日：2000-08-22
申请号：US414756
申请日：1999-10-07
申请人： Masahiro Kito , Masato Ishino , Nobuyuki Otsuka , Yasushi Matsui , Shinji Nakamura
发明人： Masahiro Kito , Masato Ishino , Nobuyuki Otsuka , Yasushi Matsui , Shinji Nakamura
IPC分类号： H01L21/205 , H01S5/026 , H01S5/0625 , H01S5/12 , H01S5/125 , H01S5/20 , H01S5/227 , H01S5/323 , H01S5/343 , H01L21/00
CPC分类号： B82Y20/00 , H01L21/02392 , H01L21/0243 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02513 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01S5/0265 , H01S5/12 , H01S5/1228 , H01S5/125 , H01S5/06256 , H01S5/1231 , H01S5/2077 , H01S5/2081 , H01S5/2272 , H01S5/2275 , H01S5/32391 , H01S5/34306 , H01S5/3434 , H01S5/34373
摘要： In a distributed feedback semiconductor laser includes an InP substrate and a multiple layer structure formed on a main surface of the InP substrate, the multiple layer structure includes at least an active layer for emitting laser light and a periodical structure for distributed feedback of the laser light, and the periodical structure includes a plurality of semiconductor regions each having a triangular cross section in a direction perpendicular to the main surface of the InP substrate and parallel to a cavity length of the distributed feedback semiconductor laser, the triangular cross section projecting toward the InP substrate.

5. 发明授权

US5652762A Semiconductor laser device and method for fabricating the same and strained quantum well crystal and method for fabricating the same 失效
标题翻译：半导体激光器件及其制造方法及应变量子阱晶体及其制造方法
公开(公告)号：US5652762A
公开(公告)日：1997-07-29
申请号：US520021
申请日：1995-08-28
申请人： Nobuyuki Otsuka , Masahiro Kito , Masato Ishino , Yasushi Matsui
发明人： Nobuyuki Otsuka , Masahiro Kito , Masato Ishino , Yasushi Matsui
IPC分类号： H01L33/00 , H01L33/06 , H01S5/32 , H01S5/34 , H01S5/343 , H01S3/19 , H01L29/06
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/0062 , H01L33/06 , H01S5/32 , H01S5/3207 , H01S5/3403 , H01S5/34306 , H01S5/34313 , H01S5/3434
摘要： The semiconductor laser device of the invention includes: a strained quantum well structure including a well layer and a barrier layer, and a semiconductor substrate for supporting the strained quantum well structure. In the semiconductor laser device, at least one of the well layer and the barrier layer is composed of a mixed crystal where an atomic ordering is generated.
摘要翻译：本发明的半导体激光器件包括：包括阱层和阻挡层的应变量子阱结构，以及用于支撑应变量子阱结构的半导体衬底。在半导体激光器件中，阱层和阻挡层中的至少一个由产生原子排列的混晶构成。

6. 发明授权

US5319657A Semiconductor laser of modulation doping quantum well structure with stopper against dopant dispersion and manufacturing method thereof 失效
标题翻译：具有阻止掺杂剂分散的阻塞的调制掺杂量子阱结构的半导体激光器及其制造方法
公开(公告)号：US5319657A
公开(公告)日：1994-06-07
申请号：US957786
申请日：1992-10-08
申请人： Nobuyuki Otsuka , Masahiro Kito , Masato Ishino , Yasushi Matsui
发明人： Nobuyuki Otsuka , Masahiro Kito , Masato Ishino , Yasushi Matsui
IPC分类号： H01S5/30 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/305 , H01S5/34 , H01S5/3054 , H01S5/309 , H01S5/3403 , H01S5/3407 , H01S5/34306 , H01S5/34313
摘要： The semiconductor laser comprises a Sn doped InP substrate 1, n-InGaAsP wave guide layer 2, 5 nm thick InGaAs well layer 3, 3.5 nm thick undoped InGaAsP layer 4, 3 nm thick p-InGaAsP modulation doping layer 5, 3.5 nm thick undoped InGaAsP layer 6, a modulation doping quantum well layer 7 with ten wells, a 90 nm thick p-InGaAsP layer 8, a p-InP clad layer 9 (Zn=7.times.10.sup.17 cm.sup.-3), p-n-p current block layer 10, and a mesa-shaped active layer region 11. An Au/sn n-electrode 12 and if Au/Zn p-electrode 13 are formed by vapor deposition to complete the laser structure.
摘要翻译：半导体激光器包括Sn掺杂的InP衬底1，n-InGaAsP波导层2，5nm厚的InGaAs阱层3,3.5nm厚的未掺杂InGaAsP层4,3nm厚的p-InGaAsP调制掺杂层5，3.5nm厚的未掺杂 InGaAsP层6，具有10个阱的调制掺杂量子阱层7，90nm厚的p-InGaAsP层8，p-InP包覆层9（Zn = 7×10 17 cm -3），pnp电流阻挡层10和台面形Au / Sn电极12，如果通过气相沉积形成Au / Zn p电极13以完成激光结构。

7. 发明授权

US06865205B2 Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US06865205B2
公开(公告)日：2005-03-08
申请号：US10145145
申请日：2002-05-15
申请人： Masahiro Kito
发明人： Masahiro Kito
IPC分类号： H01S5/062 , H01S5/10 , H01S5/20 , H01S5/227 , H01S5/30
CPC分类号： H01S5/227 , H01S5/06226 , H01S5/1064 , H01S5/2077
摘要： A semiconductor laser includes a substrate; and a multilayered film formed on the substrate and including an active layer. The multilayered film includes a stripe structure that extends in a longitudinal direction of a resonator and has a tapered portion in which a width of a stripe changes in a tapered manner; and a first side face and a second side face that sandwich the stripe structure. At least one side face of the first side face and the second side face is inclined with respect to a principal surface of the substrate.
摘要翻译：半导体激光器包括基板; 以及形成在所述基板上并且包括有源层的多层膜。多层膜包括沿谐振器的纵向方向延伸的条纹结构，并且具有条纹宽度以锥形变化的锥形部分; 以及夹着条纹结构的第一侧面和第二侧面。第一侧面和第二侧面的至少一个侧面相对于基板的主表面倾斜。

8. 发明授权

US5954165A Disc rotor 失效
标题翻译：圆盘转子
公开(公告)号：US5954165A
公开(公告)日：1999-09-21
申请号：US841383
申请日：1997-04-30
申请人： Masahiro Kito , Norihiro Akita , Masahiko Abe
发明人： Masahiro Kito , Norihiro Akita , Masahiko Abe
IPC分类号： F16D65/00 , F16D65/12
CPC分类号： F16D65/0006 , F16D65/125 , F16D65/128
摘要： A disc rotor formed of flaky graphite cast iron in which the natural frequency of the disc rotor is set by the graphite length in the flaky graphite cast iron structure.For preventing resonant vibrations ascribable to the self-excited vibrations of the component parts of disc brakes, such as pads, the natural frequency of the disc rotor are shifted from the frequency of excited vibrations of the component parts of disc brakes, such as pads.
摘要翻译：由片状石墨铸铁形成的圆盘转子，其中盘形转子的固有频率由片状石墨铸铁结构中的石墨长度设定。为了防止归因于盘式制动器（例如垫）的部件的自激振动的共振振动，盘式转子的固有频率从盘式制动器（例如垫）的组成部分的激发振动的频率偏移。

9. 发明授权

US4798242A Heat exchanger for recovering heat from exhaust gases 失效
标题翻译：用于从废气中回收热量的换热器
公开(公告)号：US4798242A
公开(公告)日：1989-01-17
申请号：US868530
申请日：1986-05-30
申请人： Masahiro Kito , Katsuhiro Mori , Takashi Mitsumoto
发明人： Masahiro Kito , Katsuhiro Mori , Takashi Mitsumoto
IPC分类号： F28F27/02 , F27D17/00 , F28F13/00 , F28F19/00
CPC分类号： F28F27/02 , Y10S165/101 , Y10S165/921
摘要： A heat exchanger for recovering heat from exhaust gases which includes a plurality of separately divided portions, a fluid passage mechanism for a fluid disposed within each of the portions, a bypass mechanism for the fluid for bypassing each of the portions and a valve mechanism for selectively operating the fluid passage mechanism or the bypass mechanism. The plurality of portions may constitute at least two chambers separately provided in the heat exchanger or at least two parts independently provided ion the heat exchanger. In addition, discharge means for discharging the fluid in the plurality of portions is provided.
摘要翻译：一种用于从废气中回收热量的热交换器，该热交换器包括多个单独分开的部分，用于设置在每个部分内的流体的流体通道机构，用于旁路每个部分的流体的旁路机构和用于选择性地操作流体通道机构或旁路机构。多个部分可以构成分开设置在热交换器中的至少两个室，或至少两个独立地设置在热交换器上的部分。此外，提供了用于排出多个部分中的流体的排出装置。

10. 发明授权

US4179980A Hydraulic brake booster 失效
标题翻译：液压制动助力器
公开(公告)号：US4179980A
公开(公告)日：1979-12-25
申请号：US782436
申请日：1977-03-29
申请人： Masahiro Kito , Yoshiharu Adachi
发明人： Masahiro Kito , Yoshiharu Adachi
IPC分类号： B60T13/14 , B60T13/16
CPC分类号： B60T13/144 , B60T13/163 , Y10T137/86509
摘要： A hydraulic brake booster adapted to vehicles having a manually operable control valve to control pressure increase in the booster for attaining the available braking fluid pressure in the brake wheel cylinders of the vehicles. In the booster is employed a control device to hold off a reaction force on the pedal to actuate the booster so that a properly controlled brake feel is transmitted to the vehicle operator at an initial stage of actuation of the booster. An earlier pressure rise is attained in the wheel cylinders within an otherwise vainly consumed period of time as a timelag and accordingly a safe and reliable braking operation is performed.
摘要翻译：一种液压制动助力器，其适用于具有手动操作的控制阀的车辆，以控制助力器中的压力增加，以获得车辆的制动轮缸中的可用的制动液压。在助力器中采用控制装置来阻止踏板上的反作用力来致动助力器，使得在助力器的起动阶段将适当控制的制动感觉传递给车辆驾驶员。在作为时间标记的否则虚拟消耗的时间段内，在轮缸中获得较早的压力上升，因此执行安全可靠的制动操作。

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