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    • 2. 发明授权
    • Measuring device using image and measurement method using image
    • 使用图像的测量装置和使用图像的测量方法
    • US07542080B2
    • 2009-06-02
    • US11288301
    • 2005-11-29
    • Masahiro KatoTakeshi Kato
    • Masahiro KatoTakeshi Kato
    • H04N9/68
    • A63F13/213A63F13/10A63F13/65A63F13/833A63F2300/1012A63F2300/1087A63F2300/8029G06T7/246G06T2207/10016G06T2207/30196
    • The present invention is intended to measure a three-dimensional position of a tracking object snapped by a camera. The invention is based upon a measuring device using an image provided with an image data input part for inputting an image of a tracking object snapped by a camera and a tracking part for calculating a position of the tracking object and the tracking part moves a frame for extracting image data based upon the image, extracts image data included in the frame from the image in each moved position, counts the number of pixels having a hue feature based upon the extracted image data, determines the position of the frame in which the counted number of pixels is maximum for every hue feature and calculates the position of the tracking object based upon the determined position of the frame.
    • 本发明旨在测量由相机拍摄的跟踪对象的三维位置。 本发明基于一种使用图像数据输入部分的图像的测量装置,该图像数据输入部分用于输入由相机拍摄的跟踪对象的图像和用于计算跟踪对象的位置的跟踪部分,并且跟踪部分移动用于 基于图像提取图像数据,从每个移动位置的图像中提取包括在帧中的图像数据,基于提取的图像数据对具有色调特征的像素数进行计数,确定其中计数的数目的帧的位置 的像素对于每个色相特征是最大的,并且基于所确定的帧的位置来计算跟踪对象的位置。
    • 9. 发明授权
    • Method for producing bonded wafer
    • 接合晶片的制造方法
    • US08691665B2
    • 2014-04-08
    • US13514414
    • 2010-11-18
    • Satoshi OkaHiroji AgaMasahiro KatoNobuhiko Noto
    • Satoshi OkaHiroji AgaMasahiro KatoNobuhiko Noto
    • H01L21/30H01L21/46H01L21/00
    • H01L21/3247H01L21/302H01L21/3065H01L21/76254
    • The present invention is directed to a method for producing a bonded wafer, the method in which heat treatment for flattening the surface of a thin film is performed on a bonded wafer made by the ion implantation delamination method in an atmosphere containing hydrogen or hydrogen chloride, wherein the surface of a susceptor on which the bonded wafer is to be placed, the susceptor used at the time of flattening heat treatment, is coated with a silicon film in advance. As a result, a method for producing a bonded wafer is provided, the method by which a bonded wafer having a thin film with good film thickness uniformity can be obtained even when heat treatment for flattening the surface of a thin film of a bonded wafer after delamination is performed in the ion implantation delamination method.
    • 本发明涉及一种接合晶片的制造方法,其特征在于,在含有氢或氯化氢的气氛中,对由离子注入脱层法制成的接合晶片进行使薄膜表面平坦化的热处理, 其中预先在其上放置接合晶片的基座的表面,在平坦化热处理时使用的基座被涂覆有硅膜。 结果,提供了一种接合晶片的制造方法,即使在将粘合晶片的薄膜的表面平坦化的热处理后,也可以获得具有良好的膜厚均匀性的薄膜的接合晶片的方法 在离子注入分层方法中进行分层。