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1. 发明申请

US20050035359A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SUBSTRATE, AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：半导体器件和半导体衬底及其制造方法
公开(公告)号：US20050035359A1
公开(公告)日：2005-02-17
申请号：US10711698
申请日：2004-09-30
申请人： Masahiro ISHIDA , Shinji NAKAMURA , Kenji ORITA , Osamu IMAFUJI , Masaaki YURI
发明人： Masahiro ISHIDA , Shinji NAKAMURA , Kenji ORITA , Osamu IMAFUJI , Masaaki YURI
IPC分类号： H01L21/205 , H01L21/20 , H01L21/338 , H01L29/04 , H01L29/20 , H01L29/205 , H01L29/812 , H01L29/861 , H01L33/00 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/16 , H01L33/22 , H01L33/32 , H01S5/223 , H01S5/323 , H01S5/343
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L29/045 , H01L29/2003 , H01L33/007 , H01L33/0079
摘要： A substrate includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor layered structure grown over the crystalline substrate; and an active region provided at a portion in the semiconductor layer structure above the crystal plane.
摘要翻译：基板包括：晶体基板，其包括主表面和设置在主表面内的晶面，以具有不同于主表面的表面取向的表面取向; 在晶体衬底上生长的半导体层状结构; 以及设置在半导体层结构中在晶面之上的部分的有源区。

2. 发明申请

US20080105950A1 SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING THE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND PATTERN FORMING METHOD 审中-公开
标题翻译：半导体基板，制造半导体基板的方法，半导体器件和图案形成方法
公开(公告)号：US20080105950A1
公开(公告)日：2008-05-08
申请号：US11970582
申请日：2008-01-08
申请人： Masahiro ISHIDA , Masahiro OGAWA , Masaya MANNOH , Masaaki YURI
发明人： Masahiro ISHIDA , Masahiro OGAWA , Masaya MANNOH , Masaaki YURI
IPC分类号： H01L29/20
CPC分类号： H01L21/02389 , G03F7/091 , H01L21/0242 , H01L21/0245 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L33/005 , H01L33/007 , H01L33/20 , H01L33/22 , H01S5/0207 , H01S5/22 , H01S5/2219 , H01S5/32341
摘要： A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer.
摘要翻译：半导体衬底包括以III族氮化物为主要成分的半导体层。在半导体层的另一平面或内部设置用于散射入射在半导体层的一个平面上的入射光束的散射部分。

3. 发明申请

US20080008220A1 SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20080008220A1
公开(公告)日：2008-01-10
申请号：US11850603
申请日：2007-09-05
申请人： Tetsuzo UEDA , Masaaki YURI
发明人： Tetsuzo UEDA , Masaaki YURI
IPC分类号： H01S5/20
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0208 , H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/2231 , H01S5/3214 , H01S2304/12 , Y10S438/973 , Y10S438/977
摘要： It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, a n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped-GaN guide layer 6, a p-type AlGaN electron overflow suppression layer 7, a p-type GaN guide layer 8, a SiO2 blocking layer 9, an Ni/ITO cladding layer electrode 10 as a transparent electrode, a Ti/Au pad electrode 11, and a Ti/Al/Ni/Au electrode 12. The SiO2 blocking layer 9 is formed above the InGaN multiple quantum well active layer 5 so as to have an opening. The Ni/ITO cladding layer electrode 10 is formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer.
摘要翻译：本发明的目的是提供一种具有高产量的半导体激光器件，其中在外延生长层中产生的夹克被抑制，并且其制造方法，半导体激光器件包括GaN衬底1，型GaN层2，n型AlGaN包覆层3，n型GaN引导层4，InGaN多量子阱有源层5，未掺杂GaN引导层6，p型AlGaN电子溢出抑制层7 p型GaN引导层8，SiO 2阻挡层9，作为透明电极的Ni / ITO包层电极10，Ti / Au焊盘电极11和Ti / Al / Ni / Au电极12.SiO 2阻挡层9形成在InGaN多量子阱有源层5上方以具有开口。 Ni / ITO包层电极10形成在开口内部，对于来自InGaN多量子阱有源层的光是透明的，并且用作覆层。

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