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1. 发明授权

US07053422B2 Solid-state self-emission display and its production method 失效
标题翻译：固态自发光显示及其制作方法
公开(公告)号：US07053422B2
公开(公告)日：2006-05-30
申请号：US10490660
申请日：2002-09-30
申请人： Masahiko Ando , Toshikazu Shimada , Masatoshi Shiiki , Shunri Oda , Nobuyoshi Koshida
发明人： Masahiko Ando , Toshikazu Shimada , Masatoshi Shiiki , Shunri Oda , Nobuyoshi Koshida
IPC分类号： H01L33/00
CPC分类号： H05B33/145 , H05B33/10 , H05B33/22
摘要： The present invention provides a solid state light-emissive display apparatus of high brightness and efficiency, high reliability, and of thin type, and method of manufacturing the same at low cost.Said apparatus has the luminous thin film made up by laminating or mixing crystal fine particle coated with insulator (5) of nm size and fluorescent fine particles (7) of nm size, and the lower electrode and the transparent upper electrode sandwiching said luminous thin film, wherein the electrons injected from said lower electrode are accelerated in the crystal fine particle coated with insulator layer (6) not being scattered by phonons to become high energy ballistic electrons, and form excitons (13) by colliding excitation of fluorescent fine particles. Since said fluorescent fine particles are of nm size, the exciton concentration is high, and luminescence intensity by extinction of excitons is also high.
摘要翻译：本发明提供一种高亮度，高效率，高可靠性，薄型的固态发光显示装置及其制造方法。所述装置具有通过层叠或混合涂覆有nm尺寸的绝缘体（5）和nm尺寸的荧光细颗粒（7）的结晶微粒组成的发光薄膜，并且下电极和透明上电极夹着所述发光薄膜其特征在于，从所述下部电极注入的电子在不被声子散射的绝缘体层（6）的结晶细小颗粒中被加速，成为高能量的弹道电子，并通过荧光细粒子的激发而形成激子（13）。由于所述荧光细粒子为nm大小，所以激子浓度高，激子的消光发光强度也高。

2. 发明申请

US20060051920A1 Information storage element, manufacturing method thereof, and memory array 失效
标题翻译：信息存储元件，其制造方法和存储器阵列
公开(公告)号：US20060051920A1
公开(公告)日：2006-03-09
申请号：US10535941
申请日：2003-11-28
申请人： Shinya Yamaguchi , Masahiko Ando , Toshikazu Shimada , Natsuki Yokoyama , Shunri Oda , Nobuyoshi Koshida
发明人： Shinya Yamaguchi , Masahiko Ando , Toshikazu Shimada , Natsuki Yokoyama , Shunri Oda , Nobuyoshi Koshida
IPC分类号： H01L21/336
CPC分类号： H01L29/7881 , G11C23/00
摘要： An information memory device capable of reading and writing of information by mechanical operation of a floating gate layer, in which a gate insulation film has a cavity (6), and a floating gate layer (5) having two stable deflection states in the cavity (6), the state stabilized by deflecting toward the channel side of transistor, and the state stabilized by deflecting toward the gate (7) side, writing and reading of information can be made by changing the stable deflection state of the floating gate layer (5) by Coulomb interactive force between the electrons (or positive holes 8) accumulated in the floating gate layer (5) and external electric field, and by reading the channel current change based on the state of the floating gate layer (5).
摘要翻译：一种能够通过机械操作读取和写入信息的信息存储装置，其中栅极绝缘膜具有空腔（6）和在空腔中具有两个稳定偏转状态的浮动栅层（5） 6），通过偏转晶体管的沟道侧稳定状态，并且通过偏向栅极（7）而稳定的状态，可以通过改变浮动栅极层（5）的稳定偏转状态来进行信息的写入和读取）通过积存在浮动栅极层（5）中的电子（或正空穴8）与外部电场之间的库仑相互作用力，并且基于浮动栅极层（5）的状态读取沟道电流变化。

3. 发明授权

US07306990B2 Information storage element, manufacturing method thereof, and memory array 失效
标题翻译：信息存储元件，其制造方法和存储器阵列
公开(公告)号：US07306990B2
公开(公告)日：2007-12-11
申请号：US10535941
申请日：2003-11-28
申请人： Shinya Yamaguchi , Masahiko Ando , Toshikazu Shimada , Natsuki Yokoyama , Shunri Oda , Nobuyoshi Koshida
发明人： Shinya Yamaguchi , Masahiko Ando , Toshikazu Shimada , Natsuki Yokoyama , Shunri Oda , Nobuyoshi Koshida
IPC分类号： H01L21/336 , H01L21/00 , H01L29/788 , H01L21/3205 , H01L21/4763 , H01L29/76
CPC分类号： H01L29/7881 , G11C23/00
摘要： An information memory device capable of reading and writing of information by mechanical operation of a floating gate layer, in which a gate insulation film has a cavity (6), and a floating gate layer (5) having two stable deflection states in the cavity (6), the state stabilized by deflecting toward the channel side of transistor, and the state stabilized by deflecting toward the gate (7) side, writing and reading of information can be made by changing the stable deflection state of the floating gate layer (5) by Coulomb interactive force between the electrons (or positive holes 8) accumulated in the floating gate layer (5) and external electric field, and by reading the channel current change based on the state of the floating gate layer (5).
摘要翻译：一种能够通过机械操作读取和写入信息的信息存储装置，其中栅极绝缘膜具有空腔（6）和在空腔中具有两个稳定偏转状态的浮动栅层（5） 6），通过偏转晶体管的沟道侧稳定状态，并且通过偏向栅极（7）而稳定的状态，可以通过改变浮动栅极层（5）的稳定偏转状态来进行信息的写入和读取）通过积存在浮动栅极层（5）中的电子（或正空穴8）与外部电场之间的库仑相互作用力，并且基于浮动栅极层（5）的状态读取沟道电流变化。

4. 发明授权

US4801468A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US4801468A
公开(公告)日：1989-01-31
申请号：US831704
申请日：1986-02-21
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： C23C16/30 , C23C16/452 , G03G5/082 , H01L21/205 , H01L31/075 , H01L31/20 , B05D3/06
CPC分类号： G03G5/08292 , C23C16/30 , C23C16/452 , H01L21/0237 , H01L21/02422 , H01L21/02425 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L31/075 , H01L31/20 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with discharge energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.
摘要翻译：用于形成沉积膜的方法包括将容纳基材的成膜空间引入其中包含通过分解含有锗和卤素的化合物形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）其与所述活性物质（A）彼此分开反应，然后向其提供放电能量，从而允许物质彼此反应，从而在基底上形成沉积膜。

5. 发明授权

US4717585A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US4717585A
公开(公告)日：1988-01-05
申请号：US826898
申请日：1986-02-06
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： C23C16/22 , C23C16/452 , H01L21/205 , B05D3/06
CPC分类号： H01L21/0245 , C23C16/22 , C23C16/452 , H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, and then allowing both the species to react with each other thereby to form a deposited film on the substrate.
摘要翻译：形成沉积膜的方法包括将含有碳和卤素的化合物分解形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）引入到容纳基材的膜形成空间中其与所述活性物质（A）相互反应，然后允许两种物质彼此反应，从而在基材上形成沉积膜。

6. 发明授权

US4716048A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US4716048A
公开(公告)日：1987-12-29
申请号：US828256
申请日：1986-02-11
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： H01L21/205 , H01L21/469
CPC分类号： H01L21/0237 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately form each other, and then allowing both the species to react with each other thereby to form a deposited film on the substrate.
摘要翻译：用于形成沉积膜的方法包括将容纳基材的成膜空间引入其中包含通过分解含有锗和卤素的化合物形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）其与所述活性物质（A）反应，彼此分开形成，然后允许物质彼此反应，从而在基底上形成沉积膜。

7. 发明授权

US4818563A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US4818563A
公开(公告)日：1989-04-04
申请号：US831413
申请日：1986-02-20
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： C23C16/22 , C30B25/02 , B05D3/06
CPC分类号： C23C16/22 , C30B25/02 , C30B29/08
摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with heat energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.
摘要翻译：用于形成沉积膜的方法包括将容纳基材的成膜空间引入其中包含通过分解含有锗和卤素的化合物形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）其与所述活性物质（A）彼此分开反应，然后向其提供热能，从而允许物质彼此反应，从而在基底上形成沉积膜。

8. 发明授权

US4798167A Apparatus for preparing a photoelectromotive force member having a concentric triplicate conduit for generating active species and precursor 失效
标题翻译：用于制备具有用于产生活性物质和前体的同心三重管道的光电动势部件的装置
公开(公告)号：US4798167A
公开(公告)日：1989-01-17
申请号：US44778
申请日：1987-05-01
申请人： Shunichi Ishihara , Keishi Saito , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Keishi Saito , Shunri Oda , Isamu Shimizu
IPC分类号： H01L31/04 , H01L21/20 , H01L31/075 , H01L31/20 , C23C16/50
CPC分类号： H01L31/202 , H01L31/075 , Y02E10/548 , Y02P70/521 , Y10S148/169
摘要： An apparatus for the preparation of a photoelectric conversion layer for a photoelectromotive force member includes:(a) a film-forming chamber having an inner space in which a substrate holder for a substrate is provided;(b) an exhaust pipe connected to the film-forming chamber and through a main valve to an exhaust pump;(c) a concentric triplicate conduit connected through a nozzle to the film-forming chamber. The concentric triplicate conduit includes:(i) an outer passage for introducing a gaseous raw material and formed by a circumferential wall and an inner wall having a plurality of gas liberation holes;(ii) a middle passage for applying microwave energy to said raw material gas to generate an active species and having a mixing region at the downstream side before the nozzle means, and(iii) a central passage situated horizontally within said middle passage (ii) for introducing a gaseous precursor and for transporting the gaseous precursor toward the film-forming chamber and being open at its end positioned in the mixing region leaving a desired distance to the nozzle means; said middle passage (ii) being formed by the inner wall of the outer passage and a circumferential wall of the central psssage (iii).Also included are:(d) a feed pipe for introducing said raw material to said outer passage (i);(e) a microwave power source for generating said microwave energy; and(f) a feed pipe for introducing said gaseous precursor to said central passage (iii).
摘要翻译：一种用于制备光电动势部件的光电转换层的装置包括：（a）具有内部空间的成膜室，在该内部空间中设置有用于基板的基板保持器; （b）排气管，其连接到成膜室并通过主阀到排气泵; （c）通过喷嘴连接到成膜室的同心三重导管。同心三重管道包括：（i）用于引入气态原料并由圆周壁形成的外部通道和具有多个气体释放孔的内壁; （ii）用于向所述原料气体施加微波能量以产生活性物质并且在喷嘴装置之前的下游侧具有混合区域的中间通道，以及（iii）水平地位于所述中间通道（ii）内的中心通道，用于引入气态前体和用于将气态前驱体输送到成膜室，并且在其位于混合区域的端部处开口，留下到喷嘴装置的期望距离; 所述中间通道（ii）由所述外部通道的内壁和所述中央通道（iii）的周壁形成。还包括：（d）用于将所述原料引入所述外通道（i）的进料管; （e）用于产生所述微波能量的微波功率源; 和（f）用于将所述气态前体引入所述中心通道（iii）的进料管。

9. 发明授权

US4689093A Process for the preparation of photoelectromotive force member 失效
标题翻译：光电动力部件制备工艺
公开(公告)号：US4689093A
公开(公告)日：1987-08-25
申请号：US843304
申请日：1986-03-24
申请人： Shunichi Ishihara , Keishi Saito , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Keishi Saito , Shunri Oda , Isamu Shimizu
IPC分类号： H01L31/04 , H01L21/20 , H01L31/075 , H01L31/20 , H01L21/205 , H01L31/18
CPC分类号： H01L31/202 , H01L31/075 , Y02E10/548 , Y02P70/521 , Y10S148/169
摘要： Process for preparing a photoelectromotive force member by forming a photoelectric conversion layer on a substrate by: (a) generating an active species by the action of microwave energy on a substance in a space leading to a film forming space containing a substrate; (b) generating a precursor by the action of microwave energy on a substance in a space situated within the space for generating the active species; and (c) introducing the resulting active species and precursor into the film forming space to chemically react them and to form the photoelectric conversion layer.
摘要翻译：通过以下步骤在基板上形成光电转换层来制备光电动势部件的方法：（a）通过微波能量作用于通向包含基板的成膜空间的空间中的物质产生活性物质; （b）通过微波能量作用于产生活性物质的空间内的物质的物质产生前体; 和（c）将所得到的活性物质和前体引入成膜空间以使其发生化学反应并形成光电转换层。

10. 发明授权

US4853251A Process for forming deposited film including carbon as a constituent element 失效
标题翻译：用于形成包含碳作为构成元素的沉积膜的工艺
公开(公告)号：US4853251A
公开(公告)日：1989-08-01
申请号：US831411
申请日：1986-02-20
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： C23C16/30 , C23C16/452 , G03G5/043 , G03G5/082 , G03G5/10 , H01L21/205 , H01L31/075 , H01L31/20
CPC分类号： G03G5/08214 , C23C16/30 , C23C16/452 , G03G5/0433 , G03G5/08278 , G03G5/08285 , G03G5/102 , G03G5/104 , H01L21/0237 , H01L21/02422 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/075 , H01L31/20 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521 , Y10S438/931
摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with discharge energy and allowing both the species to react with each other thereby to form a deposited film on the substrate.
摘要翻译：形成沉积膜的方法包括将含有碳和卤素的化合物分解形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）引入到容纳基材的膜形成空间中其与所述活性物质（A）彼此分开反应，然后向其提供放电能量并允许物质彼此反应，从而在基底上形成沉积膜。

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