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    • 5. 发明授权
    • Optical near-field distribution transfer device
    • 光学近场分布传输装置
    • US07957068B2
    • 2011-06-07
    • US12097999
    • 2006-12-19
    • Satoshi KawataJun-ichi KatoAtsushi Ono
    • Satoshi KawataJun-ichi KatoAtsushi Ono
    • G02B27/10
    • G02B6/1226G01Q60/22G02B5/008
    • Long-distance transfer of a super-resolution near field can be performed with a wavelength condition of high degree of freedom. Not only an image in same size can be merely transferred, but also a magnified image can be transferred. Thus the processing technique of a near-field image is improved. Small rods are erected at predetermined spacing with one another on a two-dimensional plane. At least the exterior surface of each small rod is made of a predetermined material having a dielectric constant ∈m meeting the condition “∈m≦−∈d” where ∈d is the dielectric constant of the surrounding medium. The axes of the small rods can be extended to a predetermined direction with respect to the two-dimensional plane. An optical near-field is incidented to one end of each small rod.
    • 能够以高自由度的波长条件进行超分辨率近场的长距离传送。 不仅可以转移相同尺寸的图像,还可以转移放大图像。 因此,近场图像的处理技术得到改善。 在二维平面上以预定间隔彼此竖立小杆。 每个小杆的至少外表面由具有介电常数∈m的预定材料制成,满足条件“∈m≦̸-εd”,其中∈d是周围介质的介电常数。 小杆的轴线可以相对于二维平面延伸到预定方向。 光学近场被入射到每个小杆的一端。
    • 8. 发明授权
    • Semiconductor device and manufacturing method thereof
    • 半导体装置及其制造方法
    • US07320932B2
    • 2008-01-22
    • US11378650
    • 2006-03-20
    • Shinji YamaguchiTakuro AsazuAtsushi Ono
    • Shinji YamaguchiTakuro AsazuAtsushi Ono
    • H01L21/44H01L23/52
    • H01L23/3107H01L23/3192H01L2924/0002H01L2924/00
    • A semiconductor device of the present invention is furnished with (a) a first protection film, formed on a substrate, having an opening section on an electrode pad, (b) a protrusion electrode, connected on the electrode pad at the opening section, whose peripheral portion is formed to overlap the first protection film, (c) a second protection film, formed to cover at least a gap at a boundary portion of the first protection film and the protrusion electrode, having an opening on a top area of the protrusion electrode except a portion around the boundary portion of the first protection film and the protrusion electrode, and (d) a coating layer formed to cover a surface of the protrusion electrode at the opening of the second protection film. With this arrangement, it is possible to provide a semiconductor device wherein the protrusion electrode is formed with an electroless plating method, capable of preventing the lowering of the adhesion strength of the protrusion electrode to the electrode pad.
    • 本发明的半导体器件具有(a)形成在基板上的第一保护膜,在电极焊盘上具有开口部,(b)突起电极,连接在开口部的电极焊盘上, 周边部形成为与第一保护膜重叠,(c)第二保护膜,形成为覆盖在第一保护膜和突起电极的边界部分的至少间隙,在突起的顶部区域具有开口 电极,除了围绕第一保护膜和突起电极的边界部分的部分,以及(d)形成为覆盖第二保护膜的开口处的突起电极的表面的涂层。 利用这种布置,可以提供一种半导体器件,其中突起电极形成有化学镀方法,能够防止突起电极对电极焊盘的粘合强度的降低。