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1. 发明申请

US20060128043A1 Method of mounting light emitting element 有权
公开(公告)号：US20060128043A1
公开(公告)日：2006-06-15
申请号：US11348210
申请日：2006-02-06
申请人： Masafumi Ozawa , Hiroshi Yoshida , Takashi Kobayashi
发明人： Masafumi Ozawa , Hiroshi Yoshida , Takashi Kobayashi
IPC分类号： H01L21/00
CPC分类号： H01L21/681 , G02B6/4221 , H01S5/02252
摘要： The present invention provides a method of mounting a light emitting element, in which a light emission point can be positioned at high accuracy with respect to the mounting member. A semiconductor laser element is placed on a matching stage. Next, a position and an azimuth of a laser stripe of the semiconductor laser element is observed, and linear displacement in X and Y directions of the semiconductor laser element from a reference line and a reference point on the matching stage, and angular displacement in an azimuth (θ) within an X-Y plane are measured. In accordance with a measured result, a control signal is sent to a driving mechanism of the feeding collet to drive the feeding collet, and the position of the semiconductor laser element is adjusted on the matching stage. After the adjustment, the semiconductor laser element is fed to and placed on a mounting surface of a heat sink H.

2. 发明授权

US06998279B2 Method of mounting light emitting element 有权
公开(公告)号：US06998279B2
公开(公告)日：2006-02-14
申请号：US10225733
申请日：2002-08-22
申请人： Masafumi Ozawa , Hiroshi Yoshida , Takashi Kobayashi
发明人： Masafumi Ozawa , Hiroshi Yoshida , Takashi Kobayashi
IPC分类号： H01L21/00 , H01L29/26
CPC分类号： H01L21/681 , G02B6/4221 , H01S5/02252
摘要： The present invention provides a method of mounting a light emitting element, in which a light emission point can be positioned at high accuracy with respect to the mounting member. A semiconductor laser element is placed on a matching stage. Next, a position and an azimuth of a laser stripe of the semiconductor laser element is observed, and linear displacement in X and Y directions of the semiconductor laser element from a reference line and a reference point on the matching stage, and angular displacement in an azimuth (θ) within an X-Y plane are measured. In accordance with a measured result, a control signal is sent to a driving mechanism of the feeding collet to drive the feeding collet, and the position of the semiconductor laser element is adjusted on the matching stage. After the adjustment, the semiconductor laser element is fed to and placed on a mounting surface of a heat sink H.

3. 发明授权

US07264980B2 Method of mounting light emitting element 有权
标题翻译：发光元件的安装方法
公开(公告)号：US07264980B2
公开(公告)日：2007-09-04
申请号：US11348210
申请日：2006-02-06
申请人： Masafumi Ozawa , Hiroshi Yoshida , Takashi Kobayashi
发明人： Masafumi Ozawa , Hiroshi Yoshida , Takashi Kobayashi
IPC分类号： H01L21/00 , H01L29/26
CPC分类号： H01L21/681 , G02B6/4221 , H01S5/02252
摘要： The present invention provides a method of mounting a light emitting element, in which a light emission point can be positioned at high accuracy with respect to the mounting member. A semiconductor laser element is placed on a matching stage. Next, a position and an azimuth of a laser stripe of the semiconductor laser element is observed, and linear displacement in X and Y directions of the semiconductor laser element from a reference line and a reference point on the matching stage, and angular displacement in an azimuth (θ) within an X-Y plane are measured. In accordance with a measured result, a control signal is sent to a driving mechanism of the feeding collet to drive the feeding collet, and the position of the semiconductor laser element is adjusted on the matching stage. After the adjustment, the semiconductor laser element is fed to and placed on a mounting surface of a heat sink H.
摘要翻译：本发明提供了一种安装发光元件的方法，其中发光点可以相对于安装构件以高精度定位。将半导体激光元件放置在匹配台上。接下来，观察半导体激光元件的激光条的位置和方位角，并且从参考线和匹配台上的参考点在半导体激光元件的X和Y方向上的线性位移以及匹配台中的角位移测量XY平面内的方位角（θ）。根据测量结果，将控制信号发送到馈送夹头的驱动机构以驱动馈送夹头，并且在匹配台上调整半导体激光元件的位置。在调整之后，半导体激光元件被馈送到放置在散热器H的安装表面上并被放置在散热器H的安装表面上。

4. 发明授权

US06853042B2 Hybrid optical element and photodetector device 失效
标题翻译：混合光学元件和光电检测器
公开(公告)号：US06853042B2
公开(公告)日：2005-02-08
申请号：US10416720
申请日：2002-09-19
申请人： Hiroshi Yoshida , Tadashi Taniguchi , Masafumi Ozawa
发明人： Hiroshi Yoshida , Tadashi Taniguchi , Masafumi Ozawa
IPC分类号： G11B7/1369 , G11B7/22 , H01L31/12 , H01L31/0232
CPC分类号： H01L31/12 , G11B7/123 , G11B7/13 , G11B7/135 , G11B7/22
摘要： The present invention concerns a hybrid optical element including at least one optical element (2) attached to one surface of a substrate (1), a semiconductor laser (3) and a photodetector (4) attached to the other surface of the substrate (1) and an intermediate member (relay substrate) (5) interposed between the substrate (1) and the photodetector (4). The intermediate member (5) has a through hole (6) through which a light flux incident on the photodetector (4) is allowed to pass and a part with a conductivity by which a terminals of the photodetector (4) are connected to a conductor pattern on the substrate (1).
摘要翻译：本发明涉及一种混合光学元件，其包括附着到基板（1）的一个表面的至少一个光学元件（2），附接到基板（1）的另一个表面的半导体激光器（3）和光电检测器（4））和介于基板（1）和光电检测器（4）之间的中间部件（中继基板）（5）。中间构件（5）具有通孔（6），入射到光电检测器（4）上的光束通过该通孔，并且具有导电性的部分，光电检测器（4）的端子连接到导体图案（1）。

5. 发明授权

US06777792B2 Semiconductor device and package with high heat radiation effect 失效
标题翻译：半导体器件和封装具有高散热效果
公开(公告)号：US06777792B2
公开(公告)日：2004-08-17
申请号：US10191571
申请日：2002-07-09
申请人： Hiroshi Yoshida , Tsuyoshi Tojo , Masafumi Ozawa
发明人： Hiroshi Yoshida , Tsuyoshi Tojo , Masafumi Ozawa
IPC分类号： H05K712
CPC分类号： H01S5/02212 , B82Y20/00 , H01L2224/48091 , H01S5/0207 , H01S5/0224 , H01S5/02252 , H01S5/02272 , H01S5/02469 , H01S5/32341 , H01S5/34313 , H01S5/34333 , H01S5/4031 , H01S2304/12 , H01L2924/00014
摘要： A conductive mounting board provided in a package has a recessed portion and a projecting portion, and an insulating mounting board is disposed on the recessed portion. The insulating mounting board is disposed on the recessed portion. The insulating mounting board has an insulating board on the surface of which a wiring portion is disposed. A semiconductor laser, constituted by stacked semiconductor layers each being made from a compound semiconductor composed of a group III based nitride, is disposed on the insulating mounting board and the conductive mounting board. An n-side electrode of the semiconductor laser is in contact with the insulating mounting board and a p-side electrode thereof is in contact with the conductive mounting board. Heat generated in the semiconductor laser is radiated via the conductive mounting board, and short-circuit between the n-side electrode and the p-side electrode is prevented by the insulating mounting board. In an alternative semiconductor device, the p-side electrode of the semiconductor element is fixed to the conductive mounting board and the n-side electrode thereof projects from the conductive mounting board.
摘要翻译：设置在封装体中的导电性安装板具有凹部和突出部，绝缘安装基板设置在凹部上。绝缘安装板设置在凹部上。绝缘安装板在其表面上设置有布线部分的绝缘板。由绝缘安装基板和导电性安装基板配置由层叠半导体层构成的半导体激光器，其由由III族氮化物构成的化合物半导体构成。半导体激光器的n侧电极与绝缘安装基板接触，其p侧电极与导电性安装基板接触。在半导体激光器中产生的热量经由导电性安装基板而被照射，并且通过绝缘安装基板来防止n侧电极与p侧电极之间的短路。在替代的半导体器件中，半导体元件的p侧电极固定到导电安装板，并且其n侧电极从导电安装板突出。

6. 发明授权

US06479889B1 Semiconductor device package, and fabrication method thereof 失效
标题翻译：半导体器件封装及其制造方法
公开(公告)号：US06479889B1
公开(公告)日：2002-11-12
申请号：US09385955
申请日：1999-08-30
申请人： Hiroshi Yoshida , Tsuyoshi Tojo , Masafumi Ozawa
发明人： Hiroshi Yoshida , Tsuyoshi Tojo , Masafumi Ozawa
IPC分类号： H05K712
CPC分类号： H01S5/02212 , B82Y20/00 , H01L2224/48091 , H01S5/0207 , H01S5/0224 , H01S5/02252 , H01S5/02272 , H01S5/02469 , H01S5/32341 , H01S5/34313 , H01S5/34333 , H01S5/4031 , H01S2304/12 , H01L2924/00014
摘要： A conductive mounting board provided in a package has a recessed portion and a projecting portion, and an insulating mounting board is disposed on the recessed portion. The insulating mounting board is disposed on the recessed portion. The insulating mounting board has an insulating board on the surface of which a wiring portion is disposed. A semiconductor laser, constituted by stacked semiconductor layers each being made from a compound semiconductor composed of a group III based nitride, is disposed on the insulating mounting board and the conductive mounting board. An n-side electrode of the semiconductor laser is in contact with the insulating mounting board and a p-side electrode thereof is in contact with the conductive mounting board. Heat generated in the semiconductor laser is radiated via the conductive mounting board, and short-circuit between the n-side electrode and the p-side electrode is prevented by the insulating mounting board. In an alternative semiconductor device, the p-side electrode of the semiconductor element is fixed to the conductive mounting board and the n-side electrode thereof projects from the conductive mounting board.
摘要翻译：设置在封装体中的导电性安装板具有凹部和突出部，绝缘安装基板设置在凹部上。绝缘安装板设置在凹部上。绝缘安装板在其表面上设置有布线部分的绝缘板。由绝缘安装基板和导电性安装基板配置由层叠半导体层构成的半导体激光器，其由由III族氮化物构成的化合物半导体构成。半导体激光器的n侧电极与绝缘安装板接触，其p侧电极与导电性安装基板接触。在半导体激光器中产生的热量经由导电性安装基板而被照射，并且通过绝缘安装基板来防止n侧电极与p侧电极之间的短路。在替代的半导体器件中，半导体元件的p侧电极固定到导电安装板，并且其n侧电极从导电安装板突出。

7. 发明授权

US06323059B1 Method of fabricating a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06323059B1
公开(公告)日：2001-11-27
申请号：US09550209
申请日：2000-04-17
申请人： Hiroshi Yoshida , Tsuyoshi Tojo , Masafumi Ozawa
发明人： Hiroshi Yoshida , Tsuyoshi Tojo , Masafumi Ozawa
IPC分类号： H01L2148
CPC分类号： H01S5/02212 , B82Y20/00 , H01L2224/48091 , H01S5/0207 , H01S5/0224 , H01S5/02252 , H01S5/02272 , H01S5/02469 , H01S5/32341 , H01S5/34313 , H01S5/34333 , H01S5/4031 , H01S2304/12 , H01L2924/00014
摘要： A conductive mounting board provided in a package has recessed portion and a projecting portion, and an insulating mounting board is disposed on the recessed portion. The insulating mounting board is disposed on the recessed portion. The insulating mounting board has an insulating board on the surface of which a wiring portion is disposed. A semiconductor laser, constituted by stacked semiconductor layers each being made from a compound semiconductor composed of a group III based nitride, is disposed on the insulating mounting board and the conductive mounting board. An n-side electrode of the semiconductor laser is in contact with the insulating mounting board and a p-side electrode thereof is in contact with the conductive mounting board.
摘要翻译：设置在封装体中的导电性安装板具有凹部和突出部，绝缘安装基板设置在凹部上。绝缘安装板设置在凹部上。绝缘安装板在其表面上设置有布线部分的绝缘板。由绝缘安装基板和导电性安装基板配置由层叠半导体层构成的半导体激光器，其由由III族氮化物构成的复合半导体构成。半导体激光器的n侧电极与绝缘安装基板接触，其p侧电极与导电性安装基板接触。

8. 发明授权

US06761303B2 Semiconductor light-emitting device and method of manufacturing the same and mounting plate 有权
标题翻译：半导体发光器件及其制造方法和安装板
公开(公告)号：US06761303B2
公开(公告)日：2004-07-13
申请号：US10217498
申请日：2002-08-14
申请人： Masafumi Ozawa
发明人： Masafumi Ozawa
IPC分类号： B23K3102
CPC分类号： H01L33/40 , H01L33/38 , H01L33/60 , H01L33/62 , H01L2224/06102 , H01L2224/48091 , H01L2933/0016 , H01S5/02212 , H01S5/0224 , H01S5/02272 , H01L2924/00014
摘要： To offer a semiconductor light-emitting device capable of preventing a short circuit failure caused by adhesion of the solder, change of a beam shape, and decrease of a beam output. A semiconductor laser device 1 is manufactured by overlaying a laser chip having a p-side electrode and a n-side electrode in a crystalline substrate and a mounting plate having a first solder film and a second solder film in a supporting body. The laser chip has a level difference A such that the p-side electrode is projected beyond the n-side electrode. The mounting plate has a level difference B such that the first solder film is projected beyond the second solder film. The level difference B of the mounting plate is determined as higher than the level difference A of the laser chip. Therefor, when the mounting plate is overlaid to the laser chip, first, the n-side electrode contacts with the second solder film, and then, the p-side electrode contacts the first solder film. Accordingly, even if the solder is squeezed out in the vicinity of the n-side electrode, the solder is hardly squeezed out in the vicinity of the p-side electrode. The pn junction part is generally positioned in the vicinity of the p-side electrode, which controls the solder to adhesion to the pn junction part.
摘要翻译：提供能够防止焊料粘附引起的短路故障的半导体发光装置，光束形状的变化和光束输出的减少。半导体激光装置1通过将具有p侧电极和n侧电极的激光芯片重叠在结晶基板中，以及在支撑体中具有第一焊料膜和第二焊料膜的安装板来制造。激光芯片具有电平差A，使得p侧电极突出超过n侧电极。安装板具有水平差B，使得第一焊料膜突出超过第二焊料膜。安装板的电平差B被确定为高于激光芯片的电平差A。因此，当安装板与激光芯片重叠时，首先，n侧电极与第二焊料膜接触，然后p侧电极与第一焊料膜接触。因此，即使焊料在n侧电极附近被挤出，在p侧电极附近难以挤出焊料。 pn接合部通常位于p侧电极附近，该p侧接合部控制焊料与pn接合部的粘附。

9. 发明授权

US06720581B2 Mounting plate for a laser chip in a semiconductor laser device 失效
标题翻译：半导体激光器件中激光芯片的安装板
公开(公告)号：US06720581B2
公开(公告)日：2004-04-13
申请号：US10259408
申请日：2002-09-30
申请人： Masafumi Ozawa
发明人： Masafumi Ozawa
IPC分类号： H01L2715
CPC分类号： H01S5/02212 , H01L2224/48091 , H01S5/0224 , H01S5/02272 , H01L2924/00014
摘要： A method of manufacturing a semiconductor laser device includes the steps of: providing a laser chip, in which a semiconductor layer is formed on a substrate, a supporting plate which supports the laser chip, a mounting plate, a first solder film positioned between the laser chip and the mounting plate and a second solder film positioned between the mounting plate and the supporting plate to form a stacked laser chip structure; applying heat to the stacked laser chip structure sufficient to melt the first solder film and the second solder film; and, applying pressure to the stacked laser chip structure during the heating step to cause simultaneous adhering of the laser chip, the mounting plate and the supporting plate to each other.
摘要翻译：一种制造半导体激光器件的方法包括以下步骤：提供其中在衬底上形成半导体层的激光芯片，支撑激光芯片的支撑板，安装板，位于激光器之间的第一焊料膜芯片和安装板以及位于安装板和支撑板之间的第二焊料膜，以形成堆叠的激光芯片结构; 对堆叠的激光芯片结构施加热量以足以熔化第一焊料膜和第二焊料膜; 并且在加热步骤期间对堆叠的激光芯片结构施加压力，以使激光芯片，安装板和支撑板彼此同时粘附。

10. 发明授权

US06474531B2 Semiconductor light-emitting device and method of manufacturing the same and mounting plate 有权
公开(公告)号：US06474531B2
公开(公告)日：2002-11-05
申请号：US09729213
申请日：2000-12-05
申请人： Masafumi Ozawa
发明人： Masafumi Ozawa
IPC分类号： B23K3112
CPC分类号： H01L33/40 , H01L33/38 , H01L33/60 , H01L33/62 , H01L2224/06102 , H01L2224/48091 , H01L2933/0016 , H01S5/02212 , H01S5/0224 , H01S5/02272 , H01L2924/00014
摘要： To offer a semiconductor light-emitting device capable of preventing a short circuit failure caused by adhesion of the solder, change of a beam shape, and decrease of a beam output. A semiconductor laser device 1 is manufactured by overlaying a laser tip having a p-side electrode and a n-side electrode in a crystalline substrate and a mounting plate having a first solder film and a second solder film in a supporting body. The laser tip has a level difference A such that the p-side electrode is projected beyond the n-side electrode. The mounting plate has a level difference B such that the first solder film is projected beyond the second solder film. The level difference B of the mounting plate is determined as higher than the level difference A of the laser tip. Therefore, when the mounting plate is overlaid to the laser tip, first, the n-side electrode contacts with the second solder film, and then, the p-side electrode contacts the first solder film. Accordingly, even if the solder is squeezed out in the vicinity of the n-side electrode, the solder is hardly squeezed out in the vicinity of the p-side electrode. The pn junction part is generally positioned in the vicinity of the p-side electrode, which controls the solder to adhesion to the pn junction part.

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