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    • 4. 发明申请
    • SUPERCRITICAL DRYING METHOD AND SUPERCRITICAL DRYING SYSTEM
    • 超临界干燥方法和超临界干燥系统
    • US20120048304A1
    • 2012-03-01
    • US13029776
    • 2011-02-17
    • Yukiko KITAJIMAHiroshi TOMITAHidekazu HAYASHIHisashi OKUCHIYohei SATO
    • Yukiko KITAJIMAHiroshi TOMITAHidekazu HAYASHIHisashi OKUCHIYohei SATO
    • B08B3/00
    • H01L21/67034H01L21/02101
    • According to an embodiment, a supercritical drying method includes: introducing a semiconductor substrate of which a surface is wet with a supercritical displacement solvent into a chamber; supplying a first supercritical fluid being based on first carbon dioxide to the chamber; supplying a second supercritical fluid which is based on second carbon dioxide to the chamber, after the supplying of the first supercritical fluid; and lowering an inside pressure of the chamber to gasify the second supercritical fluid and to discharge the gasified second supercritical fluid from the chamber. The first carbon dioxide is generated by recovering and recycling the carbon dioxide discharged from the chamber. The second carbon dioxide contains no supercritical displacement solvent or contains the supercritical displacement solvent in a concentration lower than that in the first carbon dioxide.
    • 根据一个实施方案,超临界干燥方法包括:将超临界位移溶剂表面被湿润的半导体衬底引入腔室; 将基于第一二氧化碳的第一超临界流体供应到所述室; 在供应第一超临界流体之后,向腔室供应基于第二二氧化碳的第二超临界流体; 并且降低所述室的内部压力以使所述第二超临界流体气化并从所述室排出所述气化的第二超临界流体。 第一种二氧化碳是通过回收和循环从室排出的二氧化碳产生的。 第二种二氧化碳不含超临界置换溶剂,或含有浓度低于第一种二氧化碳浓度的超临界置换溶剂。