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1. 发明授权

US06552437B1 Semiconductor device and method of manufacture thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06552437B1
公开(公告)日：2003-04-22
申请号：US09806950
申请日：2001-04-06
申请人： Masachika Masuda , Tamaki Wada , Michiaki Sugiyama , Tomoko Higashino , Takafumi Nishita , Hiroshi Ohno
发明人： Masachika Masuda , Tamaki Wada , Michiaki Sugiyama , Tomoko Higashino , Takafumi Nishita , Hiroshi Ohno
IPC分类号： H01L2940
CPC分类号： H01L24/48 , H01L23/49503 , H01L23/4951 , H01L23/49575 , H01L24/06 , H01L24/32 , H01L24/45 , H01L24/49 , H01L24/78 , H01L24/85 , H01L24/97 , H01L2224/04042 , H01L2224/05554 , H01L2224/06135 , H01L2224/06136 , H01L2224/32014 , H01L2224/32145 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48471 , H01L2224/48599 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/78 , H01L2224/85181 , H01L2224/85203 , H01L2224/85205 , H01L2224/85399 , H01L2224/92247 , H01L2224/95 , H01L2224/97 , H01L2225/06562 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01021 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01058 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2924/12041 , H01L2924/1532 , H01L2924/181 , H01L2224/83 , H01L2224/85 , H01L2924/00 , H01L2224/05599 , H01L2924/01026 , H01L2224/48227 , H01L2924/3512 , H01L2924/00012
摘要： Semiconductor chips (4), (5) are bonded and fixed to each other in a state where the rear surfaces of the respective semiconductor chips are faced to each other so that the other longer latus (4A2) of the semiconductor chip (4) and one longer latus (5A1) of the semiconductor chip (5) may confront the side of leads (10B), and supporting leads (8) are bonded and fixed onto the circuit forming surface (4A) of the semiconductor chip (4) or the circuit forming surface (5A) of the semiconductor chip (5). Owing to such a construction, the structure of a semiconductor device can be thinned. The semiconductor chips (4), (5) are bonded and fixed to each other in a state where the, positions of the respective semiconductor chips are staggered relatively to each other so that the electrodes (6) of the semiconductor chip (4) may lie outside the other longer latus (5A2) of the semiconductor chip (5), and that the electrodes (6) of the semiconductor chip (5) may lie outside the other longer latus (4A2) of the semiconductor chip (4). Owing to such a construction, the available percentage of the products of the semiconductor device can be heightened.
摘要翻译：半导体芯片（4），（5）在各半导体芯片的背面彼此相对的状态下彼此接合固定，使得半导体芯片（4）的另一个较长的凹槽（4A2）和半导体芯片（5）的一个较长的凹槽（5A1）可以面对引线（10B）的侧面，并且支撑引线（8）被接合并固定到半导体芯片（4）的电路形成表面（4A）上或半导体芯片（5）的电路形成表面（5A）。由于这样的结构，半导体器件的结构可以变薄。半导体芯片（4），（5）在各自的半导体芯片的位置相对于每个半导体芯片交错的状态下彼此接合并固定使得半导体芯片（4）的电极（6）可以位于半导体芯片（5）的另一个较长的凹槽（5A2）之外，并且半导体芯片（5）的电极（6）可以位于外部半导体芯片（4）的另一个较长的凹槽（4A2）。由于这样的结构，可以提高半导体器件的产品的可用百分比。

2. 发明授权

US06750080B2 Semiconductor device and process for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06750080B2
公开(公告)日：2004-06-15
申请号：US10372136
申请日：2003-02-25
申请人： Masachika Masuda , Tamaki Wada , Michiaki Sugiyama , Tomoko Higashino , Takafumi Nishita , Hiroshi Ohno
发明人： Masachika Masuda , Tamaki Wada , Michiaki Sugiyama , Tomoko Higashino , Takafumi Nishita , Hiroshi Ohno
IPC分类号： H01L2144
CPC分类号： H01L24/48 , H01L23/49503 , H01L23/4951 , H01L23/49575 , H01L24/06 , H01L24/32 , H01L24/45 , H01L24/49 , H01L24/78 , H01L24/85 , H01L24/97 , H01L2224/04042 , H01L2224/05554 , H01L2224/06135 , H01L2224/06136 , H01L2224/32014 , H01L2224/32145 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48471 , H01L2224/48599 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/78 , H01L2224/85181 , H01L2224/85203 , H01L2224/85205 , H01L2224/85399 , H01L2224/92247 , H01L2224/95 , H01L2224/97 , H01L2225/06562 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01021 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01058 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2924/12041 , H01L2924/1532 , H01L2924/181 , H01L2224/83 , H01L2224/85 , H01L2924/00 , H01L2224/05599 , H01L2924/01026 , H01L2224/48227 , H01L2924/3512 , H01L2924/00012
摘要： Two semiconductor chips are bonded to each other with the rear surfaces of the respective semiconductor chips faced to each other, so that two longer sides of the semiconductor chips may confront the side of leads, and supporting leads are bonded and fixed onto the circuit forming surface of one of the semiconductor chips. The semiconductor chips are further bonded to each other in a state where the positions of the respective semiconductor chips are staggered relative to each other so that electrodes of one semiconductor chip may lie outside the other longer side of the other semiconductor chip, and that electrodes of the second semiconductor chip may lie outside the other longer side of the first semiconductor chip.
摘要翻译：两个半导体芯片彼此接合，各半导体芯片的后表面彼此面对，使得半导体芯片的两个较长的侧面可以面对引线的侧面，并且支撑引线被接合并固定到电路形成表面的其中一个半导体芯片。半导体芯片在各半导体芯片的位置相对于彼此交错的状态下进一步接合，使得一个半导体芯片的电极可以位于另一半导体芯片的另一个较长侧的外侧，并且，第二半导体芯片可以位于第一半导体芯片的另一长边的外侧。

3. 发明授权

US08980919B2 Combination of a carbostyril and carnitine 有权
标题翻译：卡托品和肉碱的组合
公开(公告)号：US08980919B2
公开(公告)日：2015-03-17
申请号：US12922414
申请日：2009-03-13
申请人： Takao Urabe , Yuji Ueno , Kensuke Orito , Hiroshi Ohno
发明人： Takao Urabe , Yuji Ueno , Kensuke Orito , Hiroshi Ohno
IPC分类号： A61K31/4704 , A61K31/205 , A61K31/4709
CPC分类号： A61K31/4709 , A61K31/205 , A61K31/4704 , A61K2300/00
摘要： The present invention relates to a medicament for treating occlusive and/or ischemic vascular disorder comprising a carbostyril derivative and carnitine.
摘要翻译：本发明涉及用于治疗闭塞性和/或缺血性血管疾病的药物，其包含喹诺酮衍生物和肉毒碱。

4. 发明授权

US08889375B2 Hypoglycemic effect enhancer 有权
标题翻译：降血糖作用增强剂
公开(公告)号：US08889375B2
公开(公告)日：2014-11-18
申请号：US13258064
申请日：2010-03-25
申请人： Yasuhiro Isa , Masaki Shimakawa , Hiroshi Ohno , Hideki Yamamura
发明人： Yasuhiro Isa , Masaki Shimakawa , Hiroshi Ohno , Hideki Yamamura
IPC分类号： C12N15/09 , A23L2/02 , A61K35/74 , A61K45/06 , A61K31/133 , C07C215/44 , A23L1/03 , C07D211/46 , A23L1/30 , A61K31/702 , A61K31/445
CPC分类号： A61K31/133 , A23L2/02 , A23L29/065 , A23L33/135 , A23V2002/00 , A23Y2240/33 , A23Y2300/00 , A23Y2300/25 , A61K31/445 , A61K31/702 , A61K35/742 , A61K35/744 , A61K35/747 , A61K45/06 , C07C215/44 , C07D211/46 , A61K2300/00 , A23V2200/3204 , A23V2200/3262 , A23V2200/328
摘要： A hypoglycemic effect enhancer for enhancing the activity of an α-glucosidase inhibitor, the enhancer comprising at least one kind of bacteria selected from the group consisting of bifidobacteria, lactic acid bacteria, saccharifying bacteria, and butyric acid bacteria.
摘要翻译：一种用于增强α-葡萄糖苷酶抑制剂活性的降血糖作用增强剂，所述增强剂包含选自双歧杆菌，乳酸菌，糖化细菌和丁酸菌中的至少一种细菌。

5. 发明授权

US08491116B2 Glasses for image viewing 有权
标题翻译：用于图像查看的眼镜
公开(公告)号：US08491116B2
公开(公告)日：2013-07-23
申请号：US13528133
申请日：2012-06-20
申请人： Hiroshi Ohno , Tatsuya Sakata , Masamichi Okada , Nobuyuki Hara , Naoto Shimizu
发明人： Hiroshi Ohno , Tatsuya Sakata , Masamichi Okada , Nobuyuki Hara , Naoto Shimizu
IPC分类号： G02C7/12
CPC分类号： G02B27/0176 , G02B2027/0178 , G02C5/2263 , G02C2200/18
摘要： Glasses of present invention includes a frame portion which includes an opening through which an image displayed on a displaying device is viewed with bilateral eyes, a temple portion configured to be capable of being opened and closed against the frame portion and which includes spring material capable of being inelastically deformed, a movable portion arranged at one of the temple portion and the frame portion and which contacts to the other of the temple portion and the frame portion when the temple portion is opened to the maximum while the contacting position is movable, and a contacting portion which is arranged at the other of the temple portion and the frame portion and which contacts to the movable portion when the temple portion is opened to the maximum and varies the maximum open amount of the temple portion corresponding to movement of the movable portion.
摘要翻译：本发明的眼镜包括框架部分，其包括用双眼来观看显示装置上显示的图像的开口，被配置为能够相对于框架部分打开和关闭的镜腿部分，并且包括能够当所述镜腿部在所述接触位置是可移动的时将所述镜腿部分最大打开时，所述可移动部分布置在所述镜腿部分和所述框架部分中的一个处，并且与所述镜腿部分和所述框架部分中的另一个接触，接触部分，其布置在所述镜腿部分和所述框架部分中的另一个处，并且当所述镜腿部分最大打开时改变与所述可动部分的移动相对应的所述镜腿部分的最大打开量。

6. 发明授权

US08225354B2 Merging electronic program guide information 有权
标题翻译：合并电子节目指南信息
公开(公告)号：US08225354B2
公开(公告)日：2012-07-17
申请号：US12101758
申请日：2008-04-11
申请人： Colin Lee Acton , Cory Jon Cirrincione , Michael S. Hayton , Shawn Pickett , Renaud Bordelet , Paul Irwin , Hans Peter Hess , Hiroshi Ohno , Frederic Azera
发明人： Colin Lee Acton , Cory Jon Cirrincione , Michael S. Hayton , Shawn Pickett , Renaud Bordelet , Paul Irwin , Hans Peter Hess , Hiroshi Ohno , Frederic Azera
IPC分类号： G06F3/00 , G06F13/00 , H04N5/445
CPC分类号： H04N5/44543 , H04N5/50 , H04N21/4143 , H04N21/4263 , H04N21/4345 , H04N21/4622 , H04N21/482
摘要： Techniques are disclosed herein for merging EPG data associated with a variety of program sources. In one aspect, EPG data is accessed for different program sources and rules are selected that define how entries in the EPG data are to be merged. The rules may be selected based on whether the EPG data was collected in-band or out-of-band. In addition, the merging rules can be dependent on the program source, which allows the flexibility of applying different rules to different program sources. The EPG data from the different program sources is merged into a single EPG based on the selected rules.
摘要翻译：本文公开了用于合并与各种程序源相关联的EPG数据的技术。在一个方面，为不同的程序源访问EPG数据，并且选择定义如何合并EPG数据中的条目的规则。可以基于EPG数据是在带内还是带外收集来选择规则。此外，合并规则可以依赖于程序源，这样可以灵活地将不同的规则应用于不同的程序源。来自不同程序源的EPG数据基于所选择的规则合并到单个EPG中。

7. 发明申请

US20120034611A1 METHOD FOR DETECTING PRESUMED IGA NEPHROPATHY AND METHOD FOR SCREENING IGA NEPHROPATHY PATIENTS 失效
标题翻译：检测IGA神经病变的方法及筛选IGA神经病患者的方法
公开(公告)号：US20120034611A1
公开(公告)日：2012-02-09
申请号：US13148344
申请日：2010-02-10
申请人： Yasuyuki Nagasawa , Kenichiro Ito , Yoshitaka Isaka , Shinji Fukuda , Hiroshi Ohno
发明人： Yasuyuki Nagasawa , Kenichiro Ito , Yoshitaka Isaka , Shinji Fukuda , Hiroshi Ohno
IPC分类号： C12Q1/68 , C07K16/12 , G01N33/569
CPC分类号： C12Q1/689 , C12Q1/04 , G01N33/6893 , G01N2800/347 , Y02A50/451
摘要： Based on detection of Treponema bacteria or Campylobacter bacteria present in a sample derived from the tonsil of a subject who has a positive result on at least one of a urinary protein test and a urinary occult blood test, or of a patient diagnosed with possible IgA nephropathy, presumed IgA nephropathy can be detected with a high accuracy, in a simple and quick manner without physical burden on subjects. Also, an IgA nephropathy patient for whom tonsillectomy is effective in therapy of IgA nephropathy can be selected with a high accuracy, in a simple and quick manner without physical burden on subjects.
摘要翻译：基于检测来源于受试者的扁桃体的样品中的梅毒螺旋体细菌或弯曲杆菌细菌，其在至少一种尿蛋白测试和尿液潜血试验中具有阳性结果，或者被诊断患有可能的IgA肾病的患者推测IgA肾病可以以高精度，简单快速的方式检测，无需对受试者造成身体负担。此外，扁桃体切除术有效治疗IgA肾病的IgA肾病患者可以以高精度，简单快速的方式选择，无需对受试者造成身体负担。

8. 发明授权

US07997068B2 Sulfur purge control device for an internal combustion engine 有权
标题翻译：用于内燃机的硫吹扫控制装置
公开(公告)号：US07997068B2
公开(公告)日：2011-08-16
申请号：US12044582
申请日：2008-03-07
申请人： Tomoko Morita , Norio Suzuki , Hiroshi Ohno
发明人： Tomoko Morita , Norio Suzuki , Hiroshi Ohno
IPC分类号： F01N3/00
CPC分类号： F02D41/028 , F01N3/035 , F01N3/0885 , F01N13/009 , F01N13/0097 , F01N2560/025 , F01N2560/026 , F01N2560/06 , F01N2560/14 , F02D41/0275 , F02D41/1439 , F02D41/1441 , F02D41/1445 , F02D2200/0806 , F02D2200/0818 , Y02T10/20
摘要： In a control device for an internal combustion engine provided with a NOx catalytic converter in an exhaust passage thereof, the progress of an undesired substance removal process is computed from the consumption of the reducing agent contained in the exhaust gas in the NOx catalytic converter. The undesired substance may include sulfur contents and NOx captured in the NOx catalytic converter. This computation may be based on the air fuel ratio of the exhaust gas upstream of the NOx catalytic converter and the estimated consumption of the reducing agent contained in the exhaust gas or on the difference between the air fuel ratios of the exhaust gas upstream and downstream of the NOx catalytic converter. In either case, the accuracy can be improved by taking into account the space velocity of the exhaust gas.
摘要翻译：在用于其排气通道中具有NOx催化转化器的内燃机的控制装置中，根据NOx催化转化器中的排气中所含的还原剂的消耗量计算出不需要的物质去除过程的进展。不期望的物质可以包括在NOx催化转化器中捕获的硫含量和NOx。该计算可以基于NOx催化转化器上游的废气的空燃比和废气中包含的还原剂的估计消耗量，或者废气上游和下游的排气的空燃比 NOx催化转化器。在这两种情况下，通过考虑废气的空间速度可以提高精度。

9. 发明授权

US07924897B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07924897B2
公开(公告)日：2011-04-12
申请号：US11889818
申请日：2007-08-16
申请人： Hiroshi Ohno
发明人： Hiroshi Ohno
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0201 , H01S5/0202 , H01S5/22
摘要： A semiconductor laser device includes a chip obtained from a substrate and a semiconductor multi-layer formed on the substrate. The semiconductor multi-layer is formed from a plurality of semiconductor layers of a semiconductor material having a hexagonal structure, and includes a stripe-shaped wave guide portion. The chip includes two chip end facets that extend in a direction crossing an extending direction of the wave guide portion. Each of regions on both sides of the wave guide portion in at least one of the chip end facets has a notch portion formed by notching a part of the chip, and the notch portion exposes a first wall surface connecting to the chip end facet and a second wall surface connecting to the chip side facet. An angle between an extending direction of the first wall surface in at least one of the two notch portions and an extending direction of the cleavage facet is in a range of about 10 degrees to about 40 degrees.
摘要翻译：半导体激光器件包括从衬底获得的芯片和形成在衬底上的半导体多层。半导体多层由具有六边形结构的半导体材料的多个半导体层形成，并且包括条形波导部。芯片包括沿与波导部分的延伸方向交叉的方向延伸的两个芯片端面。在至少一个芯片端面中的波导部分的两侧上的每个区域具有通过切割芯片的一部分而形成的切口部分，并且切口部分暴露连接到芯片端面的第一壁表面和第二壁面连接到芯片侧面。两个切口部分中的至少一个中的第一壁表面的延伸方向与解理面的延伸方向之间的角度在约10度至约40度的范围内。

10. 发明申请

US20110058584A1 SEMICONDUCTOR LASER DEVICE AND FABRICATION METHOD FOR THE SAME 审中-公开
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20110058584A1
公开(公告)日：2011-03-10
申请号：US12312150
申请日：2008-11-12
申请人： Hiroshi Ohno , Yoshiaki Hasegawa , Katsumi Sugiura
发明人： Hiroshi Ohno , Yoshiaki Hasegawa , Katsumi Sugiura
IPC分类号： H01S5/22 , H01L21/30
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/028 , H01S5/0287 , H01S5/0425 , H01S5/2022 , H01S5/34333 , H01S2301/18
摘要： A semiconductor laser device includes a semiconductor multilayer structure 12 having a stripe-shaped ridge waveguide portion 12a extending in a direction intersecting a cavity end face. A dielectric layer 16 is formed on the semiconductor multilayer structure 12 to cover at least part of both side faces of the ridge waveguide portion 12a. Light absorption layers 17 are formed on both sides of the ridge waveguide portion 12a on the semiconductor multilayer structure 12 so as to be spaced from the ridge waveguide portion 12a and the cavity end face.
摘要翻译：半导体激光器件包括半导体多层结构12，其具有在与腔体端面相交的方向上延伸的条形脊状波导部分12a。在半导体多层结构体12上形成电介质层16，以覆盖脊状波导部分12a的两个侧面的至少一部分。在半导体多层结构体12的脊状波导部12a的两侧形成有光吸收层17，与脊部波导部12a和腔侧端面间隔开。

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