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1. 发明授权

US07940203B2 Electromagnetic wave absorption board to be used in wireless LAN 失效
标题翻译：电磁波吸收板用于无线局域网
公开(公告)号：US07940203B2
公开(公告)日：2011-05-10
申请号：US12298129
申请日：2007-04-27
申请人： Masaaki Katano , Tadashi Onishi , Yoshinori Shirai , Tetsuji Hattori
发明人： Masaaki Katano , Tadashi Onishi , Yoshinori Shirai , Tetsuji Hattori
IPC分类号： H01Q17/00 , H05K9/00 , G01S13/00
CPC分类号： H05K9/0005 , C03C17/36 , C03C17/3618 , C03C17/3649 , C03C17/3676 , C03C17/3681 , E06B3/66 , E06B5/18
摘要： In a double glazing where a pair of transparent glass sheets are arranged at an interval by having a spacer at the circumferential end portion and where a hollow layer sealed between the pair of glass sheets is formed, there is provided an electromagnetic absorption board used for wireless LAN, which is characterized in that the thickness of the glass sheet is in a range of 2.5-20 mm, that the thickness of the hollow layer is in a range of 2.5-15 mm, that at least one glass sheet of the pair of glass sheets is formed with a resistive film having a surface resistance (surface resistivity) in a range of 20Ω/□ to 2 kΩ/□, and that the resistive film is formed on a glass sheet side on the hollow layer side.
摘要翻译：在双层玻璃中，通过在周向端部具有间隔件并且形成密封在一对玻璃板之间的中空层，间隔布置一对透明玻璃板，设置有用于无线的电磁吸收板 LAN，其特征在于，所述玻璃板的厚度在2.5〜20mm的范围内，所述中空层的厚度在2.5〜15mm的范围内，所述一对玻璃板形成有表面电阻（表面电阻率）在20Ω·□〜2KΩ/□范围内的电阻膜，电阻膜形成在中空层侧的玻璃板侧。

2. 发明申请

US20090096659A1 ELECTROMAGNETIC WAVE ABSORPTION BOARD TO BE USED IN WIRELESS LAN 失效
标题翻译：电磁波吸收板用于无线局域网
公开(公告)号：US20090096659A1
公开(公告)日：2009-04-16
申请号：US12298129
申请日：2007-04-27
申请人： Masaaki Katano , Tadashi Onishi , Yoshinori Shirai , Tetsuji Hattori
发明人： Masaaki Katano , Tadashi Onishi , Yoshinori Shirai , Tetsuji Hattori
IPC分类号： H01Q17/00
CPC分类号： H05K9/0005 , C03C17/36 , C03C17/3618 , C03C17/3649 , C03C17/3676 , C03C17/3681 , E06B3/66 , E06B5/18
摘要： In a double glazing where a pair of transparent glass sheets are arranged at an interval by having a spacer at the circumferential end portion and where a hollow layer sealed between the pair of glass sheets is formed, there is provided an electromagnetic absorption board used for wireless LAN, which is characterized in that the thickness of the glass sheet is in a range of 2.5-20 mm, that the thickness of the hollow layer is in a range of 2.5-15 mm, that at least one glass sheet of the pair of glass sheets is formed with a resistive film having a surface resistance (surface resistivity) in a range of 20-2KΩ/□, and that the resistive film is formed on a glass sheet side on the hollow layer side.
摘要翻译：在双层玻璃中，通过在周向端部具有间隔件并且形成密封在一对玻璃板之间的中空层，间隔布置一对透明玻璃板，设置有用于无线的电磁吸收板 LAN，其特征在于，所述玻璃板的厚度在2.5〜20mm的范围内，所述中空层的厚度在2.5〜15mm的范围内，所述一对玻璃板形成有表面电阻（表面电阻率）在20-2KΩ/□范围内的电阻膜，并且电阻膜形成在中空的玻璃板侧上层侧。

3. 发明授权

US08911569B2 Sputtering target and method for producing same 有权
公开(公告)号：US08911569B2
公开(公告)日：2014-12-16
申请号：US13579223
申请日：2011-03-08
申请人： Shoubin Zhang , Masahiro Shoji , Yoshinori Shirai
发明人： Shoubin Zhang , Masahiro Shoji , Yoshinori Shirai
IPC分类号： C22C9/00 , C23C14/14 , C22C1/10 , C22C32/00 , C23C14/34 , C23C14/35 , H01L31/032 , B22F3/14
摘要： [Problems to be Solved]To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same.[Means to Solve the Problems]The sputtering target is provided wherein 20 to 40 at % of Ga, 0.05 to 2 at % of Na, and 0.025 to 1.0 at % of S are contained and a remaining portion has a component composition consisting of Cu and unavoidable impurities. Also, a method for producing the sputtering target includes the step of hot pressing a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder in a vacuum atmosphere or an inert gas atmosphere or sintering a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder by hot isostatic pressing.

4. 发明授权

US5637411A Magneto-optical recording medium and process for producing the same 失效
标题翻译：磁光记录介质及其制造方法
公开(公告)号：US5637411A
公开(公告)日：1997-06-10
申请号：US227673
申请日：1994-04-14
申请人： Katsusuke Shimazaki , Satoru Ohnuki , Masatoshi Hashimoto , Yoshinori Shirai , Norio Ohta , Hideo Fujiwara , Masafumi Yoshihiro , Yukinori Yamada , Eiji Koyama , Hitoshi Furusho
发明人： Katsusuke Shimazaki , Satoru Ohnuki , Masatoshi Hashimoto , Yoshinori Shirai , Norio Ohta , Hideo Fujiwara , Masafumi Yoshihiro , Yukinori Yamada , Eiji Koyama , Hitoshi Furusho
IPC分类号： G11B7/26 , G11B11/105 , G11B5/66
CPC分类号： G11B11/10591 , G11B11/10584 , G11B11/10586 , G11B11/10589 , G11B7/26 , Y10S428/90 , Y10T428/12771 , Y10T428/12931
摘要： Disclosed is a magneto-optical recording medium which comprises a transparent substrate and, provided on the substrate, a magneto-optical recording film comprising a perpendicular magnetic film based on rare earth metal-transition metal and an auxiliary magnetic film having spontaneous magnetization which exerts, between itself and the magneto-optical recording film, an exchange coupling force and wherein the auxiliary magnetic film is a magnetic film which readily rotates its magnetization direction toward the external magnetic field in the neighborhood of the Curie temperature of the magneto-optical recording film and has a squareness ratio of not more than 1 in the neighborhood of the Curie temperature. Also disclosed is a process for producing the magneto-optical recording medium.
摘要翻译：公开了一种磁光记录介质，其包括透明基板，并且在基板上设置包括基于稀土金属 - 过渡金属的垂直磁性膜和具有自发磁化的辅助磁膜的磁光记录膜，介于其自身与磁光记录膜之间的交换耦合力，并且其中辅助磁膜是在磁光记录膜的居里温度附近容易地将其磁化方向旋转到外部磁场的磁性膜，在居里温度附近具有不大于1的矩形比。还公开了一种用于制造磁光记录介质的方法。

5. 发明授权

US5598399A Magneto-optical recording medium having multiple magnetic layers for magneto-optical recording medium 失效
标题翻译：具有用于磁光记录介质的多个磁性层的磁光记录介质
公开(公告)号：US5598399A
公开(公告)日：1997-01-28
申请号：US518889
申请日：1995-08-24
申请人： Noriyuki Ogihara , Yoshinori Shirai , Takehiko Yorozu
发明人： Noriyuki Ogihara , Yoshinori Shirai , Takehiko Yorozu
IPC分类号： G11B11/10 , G11B11/105 , G11B7/24 , G11B11/00
CPC分类号： G11B11/10508 , G11B11/10591
摘要： A magneto-optic recording medium comprises on a substrate the first dielectric substance layer, a magneto-optic recording layer, the second dielectric substance layer and a reflective layer. The magneto-optic recording layer has, in the range of the Curie temperature Tc to (Tc-50) .degree.C., a value of a product of a saturated magnetization Ms and a coercive force Hc of not more than 4.times.10.sup.4 erg/cm.sup.3. The magneto-optic recording medium can be recorded at a magnetic field as low as 100 (Oe) with an excellent C/N.
摘要翻译：磁光记录介质在衬底上包括第一电介质层，磁光记录层，第二电介质层和反射层。磁光记录层在居里温度Tc至（Tc-50）℃的范围内具有饱和磁化强度Ms和矫顽力Hc的乘积的值不大于4×10 4 erg / cm 3。磁光记录介质可以以低至100（Oe）的磁场记录，具有优异的C / N。

6. 发明授权

US08968491B2 Sputtering target and method for producing same 有权
标题翻译：溅射靶材及其制造方法
公开(公告)号：US08968491B2
公开(公告)日：2015-03-03
申请号：US13579223
申请日：2011-03-08
申请人： Shoubin Zhang , Masahiro Shoji , Yoshinori Shirai
发明人： Shoubin Zhang , Masahiro Shoji , Yoshinori Shirai
IPC分类号： C22C9/00 , C23C14/14 , C22C1/10 , C22C32/00 , C23C14/34 , C23C14/35 , H01L31/032 , B22F3/14
CPC分类号： C23C14/14 , B22F2003/145 , C22C1/10 , C22C9/00 , C22C32/0089 , C23C14/3407 , C23C14/3414 , C23C14/35 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： [Problems to be Solved]To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same.[Means to Solve the Problems]The sputtering target is provided wherein 20 to 40 at % of Ga, 0.05 to 2 at % of Na, and 0.025 to 1.0 at % of S are contained and a remaining portion has a component composition consisting of Cu and unavoidable impurities. Also, a method for producing the sputtering target includes the step of hot pressing a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder in a vacuum atmosphere or an inert gas atmosphere or sintering a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder by hot isostatic pressing.
摘要翻译： [待解决的问题]提供能够形成通过溅射法有利地添加有Na的Cu-Ga膜的溅射靶及其制造方法。 [解决问题的方法]提供溅射靶，其中Ga为20〜40at％，Na为0.05〜2at％，S为0.025〜1.0at％，剩余部分为Cu 和不可避免的杂质。此外，溅射靶的制造方法包括在真空气氛中热压Na2S粉末和Cu-Ga合金粉末的混合粉末或Na 2 S粉末，Cu-Ga合金粉末和纯Cu粉末的混合粉末的步骤，或惰性气体气氛，或通过热等静压法烧结Na 2 S粉末和Cu-Ga合金粉末的混合粉末或Na 2 S粉末，Cu-Ga合金粉末和纯Cu粉末的混合粉末。

7. 发明申请

US20100270146A1 METHOD FOR MANUFACTURING CO-BASE SINTERED ALLOY SPUTTERING TARGET FOR FORMATION OF MAGNETIC RECORDING FILM WHICH IS LESS LIKELY TO GENERATE PARTRICLES, AND CO-BASE SINTERED ALLOY SPUTTERING TARGET FOR FORMATION OF MAGNETIC RECORDING FILM 审中-公开
标题翻译：制造用于形成磁性记录膜的CO基烧结合金溅射靶的方法，用于形成磁性记录膜，用于形成磁记录膜的CO基底烧结合金溅射靶
公开(公告)号：US20100270146A1
公开(公告)日：2010-10-28
申请号：US12294691
申请日：2007-03-30
申请人： Sohei Nonaka , Yoshinori Shirai , Yukiya Sugiuchi
发明人： Sohei Nonaka , Yoshinori Shirai , Yukiya Sugiuchi
IPC分类号： C23C14/34 , B22F3/12 , B22F3/15
CPC分类号： C23C14/3414 , B22F3/15 , C22C19/07 , C22C32/0026 , C22C2202/02
摘要： A method for manufacturing a Co-base sintered alloy sputtering target for the formation of a magnetic recording film including providing a Cr—Co alloy powder consisting of 50 to 70 atomic % of Cr and remaining Co, a Pt powder, a non-magnetic oxide powder, and a Co powder, blending and mixing the powders together so as to give the chemical composition consisting of 2 to 15 mol % of a non-magnetic oxide, 3 to 20 mol % of Cr, and 5 to 30 mol % of Pt and a remainder containing Co, and sintering the mixture under pressure. Or alternatively providing a Pt—Cr binary alloy powder consisting of 10 to 90 atomic % of Pt and remaining Cr, a Pt powder, a non-magnetic oxide powder, and a Co powder, blending and mixing the powders so as to give the chemical composition above, and then sintering the mixture under pressure.
摘要翻译：一种制造用于形成磁记录膜的Co基烧结合金溅射靶的方法，包括提供由50〜70原子％的Cr和剩余的Co组成的Cr-Co合金粉末，Pt粉末，非磁性氧化物粉末和Co粉末，将粉末共混并混合，得到由2〜15摩尔％的非磁性氧化物，3〜20摩尔％的Cr和5〜30摩尔％的Pt组成的化学组成和含有Co的剩余物，并在压力下烧结混合物。或者提供由10〜90原子％的Pt和残留的Cr，Pt粉末，非磁性氧化物粉末和Co粉末组成的Pt-Cr二元合金粉末，将粉末混合并混合，得到化学组合物，然后在压力下烧结混合物。

8. 发明授权

US5783320A Magneto-optical recording medium and process for producing the same 失效
标题翻译：磁光记录介质及其制造方法
公开(公告)号：US5783320A
公开(公告)日：1998-07-21
申请号：US781711
申请日：1997-01-10
申请人： Katsusuke Shimazaki , Satoru Ohnuki , Masatoshi Hashimoto , Yoshinori Shirai , Norio Ohta , Hideo Fujiwara , Masafumi Yoshihiro , Yukinori Yamada , Eiji Koyama , Hitoshi Furusho
发明人： Katsusuke Shimazaki , Satoru Ohnuki , Masatoshi Hashimoto , Yoshinori Shirai , Norio Ohta , Hideo Fujiwara , Masafumi Yoshihiro , Yukinori Yamada , Eiji Koyama , Hitoshi Furusho
IPC分类号： G11B7/26 , G11B11/105 , G11B5/66
CPC分类号： G11B11/10591 , G11B11/10584 , G11B11/10586 , G11B11/10589 , G11B7/26 , Y10S428/90 , Y10T428/12771 , Y10T428/12931
摘要： Disclosed is a magneto-optical recording medium which comprises a transparent substrate and, provided on the substrate, a magneto-optical recording film comprising a perpendicular magnetic film based on rare earth metal-transition metal and an auxiliary magnetic film having spontaneous magnetization which exerts, between itself and the magneto-optical recording film, an exchange coupling force on each other and in which the auxiliary magnetic film used is a magnetic film which readily rotates its magnetization direction toward the external magnetic field in the neighborhood of the Curie temperature of the magneto-optical recording film and has a squareness ratio of not more than 1 in the neighborhood of the Curie temperature, and a process for producing the magneto-optical recording medium.
摘要翻译：公开了一种磁光记录介质，其包括透明基板，并且在基板上设置包括基于稀土金属 - 过渡金属的垂直磁性膜和具有自发磁化的辅助磁膜的磁光记录膜，在它们自身和磁光记录膜之间，彼此之间的交换耦合力，并且其中使用的辅助磁膜是磁性薄膜，其容易地使其磁化方向在磁光的居里温度附近的外部磁场旋转 - 光学记录膜，并且在居里温度附近具有不大于1的矩形比率，以及用于制造磁光记录介质的工艺。

9. 发明授权

US08795489B2 Sputtering target and method for producing the same 有权
标题翻译：溅射靶材及其制造方法
公开(公告)号：US08795489B2
公开(公告)日：2014-08-05
申请号：US13262540
申请日：2010-11-04
申请人： Shoubin Zhang , Yoshinori Shirai
发明人： Shoubin Zhang , Yoshinori Shirai
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , C22C1/0425 , C22C9/00 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： [Problems]To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same.[Means for Solving the Problems]The sputtering target is provided wherein 20 to 40 at % of Ga and 0.05 to 1 at % of Na are contained as metal components except fluorine (F) of the sputtering target, a remaining portion has a component composition consisting of Cu and unavoidable impurities, and Na is contained in the state of a NaF compound. Also, a method for producing the sputtering target includes the steps of forming a molded article consisting of a mixed powder of NaF powder and Cu—Ga powder or a mixed powder of NaF powder, Cu—Ga powder, and Cu powder; and sintering the molded article in a vacuum atmosphere, an inert gas atmosphere, or a reducing atmosphere.
摘要翻译： [问题]提供能够形成通过溅射法有利地添加Na的Cu-Ga膜的溅射靶及其制造方法。 [解决问题的方法]提供溅射靶，其中，作为溅射靶的氟（F）以外的金属成分，作为金属成分含有Ga的20〜40at％的Na和0.05〜1at％的Na，剩余部分具有成分组成由Cu和不可避免的杂质组成，Na含有NaF化合物的状态。此外，溅射靶的制造方法包括以下步骤：形成由NaF粉末和Cu-Ga粉末的混合粉末或NaF粉末，Cu-Ga粉末和Cu粉末的混合粉末组成的模制品; 并在真空气氛，惰性气体气氛或还原气氛中烧结成型制品。

10. 发明申请

US20130001078A1 SPUTTERING TARGET AND METHOD FOR PRODUCING SAME 有权
标题翻译：喷射目标及其生产方法
公开(公告)号：US20130001078A1
公开(公告)日：2013-01-03
申请号：US13579223
申请日：2011-03-08
申请人： Shoubin Zhang , Masahiro Shoji , Yoshinori Shirai
发明人： Shoubin Zhang , Masahiro Shoji , Yoshinori Shirai
IPC分类号： C23C14/14 , B22F3/14 , B22F3/15
CPC分类号： C23C14/14 , B22F2003/145 , C22C1/10 , C22C9/00 , C22C32/0089 , C23C14/3407 , C23C14/3414 , C23C14/35 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： [Problems to be Solved]To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same.[Means to Solve the Problems]The sputtering target is provided wherein 20 to 40 at % of Ga, 0.05 to 2 at % of Na, and 0.025 to 1.0 at % of S are contained and a remaining portion has a component composition consisting of Cu and unavoidable impurities. Also, a method for producing the sputtering target includes the step of hot pressing a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder in a vacuum atmosphere or an inert gas atmosphere or sintering a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder by hot isostatic pressing.
摘要翻译： [待解决的问题]提供能够形成通过溅射法有利地添加有Na的Cu-Ga膜的溅射靶及其制造方法。 [解决问题的方法]提供溅射靶，其中Ga为20〜40at％，Na为0.05〜2at％，S为0.025〜1.0at％，剩余部分为Cu 和不可避免的杂质。此外，溅射靶的制造方法包括在真空气氛中热压Na2S粉末和Cu-Ga合金粉末的混合粉末或Na 2 S粉末，Cu-Ga合金粉末和纯Cu粉末的混合粉末的步骤，或惰性气体气氛，或通过热等静压法烧结Na 2 S粉末和Cu-Ga合金粉末的混合粉末或Na 2 S粉末，Cu-Ga合金粉末和纯Cu粉末的混合粉末。

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