专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4194972A Method for breaking an oil-in-water emulsion 失效
标题翻译：破坏水包油乳液的方法
公开(公告)号：US4194972A
公开(公告)日：1980-03-25
申请号：US821009
申请日：1977-08-01
申请人： Marvin H. Weintraub , Matthew A. Dzieciuch , Roy L. Gealer
发明人： Marvin H. Weintraub , Matthew A. Dzieciuch , Roy L. Gealer
IPC分类号： B01D17/06 , C02F1/463 , C02B1/20 , C02C5/04
CPC分类号： C02F1/463 , B01D17/06
摘要： A method is disclosed for breaking an oil-in-water emulsion. Briefly, the method of this invention includes the following general steps. A porous ferrous ion producing anode is established. A supply of the oil-in-water emulsion is located on one side of the anode and a fixed volume of the emulsion is flowed through a fixed cross sectional area of the anode per unit of time. Less than a passivating current is flowed through each unit area of the anode per unit of time thereby dissolving into the emulsion ferrous ion in sufficient quantity to break the emulsion. The flowing of the fixed volume of the emulsion through the electrode per unit of time and the dissolving of sufficient quantity of ferrous ions results in a homogeneous dispersion of the ferrous ions in the fixed volume of the emulsion. There is an in situ generation of hydroxyl ion at the cathode and tiny air bubbles are introduced near the electrodes to oxidize the ferrous ions to ferric ions. The ferric ions are then permitted time to break the emulsion and remove the oil therefrom. This oil floats to the top surface in a froth and is removed.
摘要翻译：公开了一种破坏水包油乳液的方法。简而言之，本发明的方法包括以下一般步骤。建立了产生多孔亚铁离子的阳极。水包油乳液的供应位于阳极的一侧，并且固体体积的乳液在单位时间内流过阳极的固定横截面积。每单位时间内，不到钝化电流流过阳极的每个单位面积，从而以足够的量溶解到乳液亚铁离子中以破坏乳液。每单位时间内固定体积的乳液通过电极的流动和足够量的亚铁离子的溶解导致亚铁离子在乳液的固定体积中的均匀分散。在阴极处有原位生成羟基离子，在电极附近引入微小的气泡，以将亚铁离子氧化成铁离子。然后允许铁离子破裂乳液并从中除去油的时间。这种油漂浮在顶部的表面，并被除去。

2. 发明授权

US4458095A Use of zinc and copper (I) salts to reduce sulfur and nitrogen impurities during the pyrolysis of plastic and rubber waste to hydrocarbons 失效
标题翻译：在将塑料和橡胶废物热解成烃时，使用锌和铜（I）盐来减少硫和氮杂质
公开(公告)号：US4458095A
公开(公告)日：1984-07-03
申请号：US429369
申请日：1982-09-30
申请人： Robert C. Wingfield, Jr. , Jacob Braslaw , Roy L. Gealer
发明人： Robert C. Wingfield, Jr. , Jacob Braslaw , Roy L. Gealer
IPC分类号： C10G1/02 , C10G1/10 , C07C7/00 , C07C7/16
CPC分类号： C10G1/10 , C10G1/02
摘要： An improvement in a process for the pyrolytic conversion of rubber and plastic waste to hydrocarbon products which results in reduced levels of nitrogen and sulfur impurities in these products. The improvement comprises pyrolyzing the waste in the presence of at least about 1 weight percent of salts, based on the weight of the waste, preferably chloride or carbonate salts, of zinc or copper (I).This invention was made under contract with or subcontract thereunder of the Department of Energy Contract #DE-AC02-78-ER10049.
摘要翻译：橡胶和塑料废物热解转化为烃产品的方法的改进，导致这些产品中氮和硫杂质含量降低。该改进包括在至少约1重量％的盐的存在下，基于废物，优选氯化物或碳酸盐的锌或铜（I）的重量来热解废物。本发明是根据能源合同部门DE-AC02-78-ER10049的合同或分包合同进行的。

3. 发明授权

US4515659A Pyrolytic conversion of plastic and rubber waste to hydrocarbons with basic salt catalysts 失效
标题翻译：使用碱性盐催化剂将塑料和橡胶废物的热解转化为烃类
公开(公告)号：US4515659A
公开(公告)日：1985-05-07
申请号：US429586
申请日：1982-09-30
申请人： Robert C. Wingfield, Jr. , Jacob Braslaw , Roy L. Gealer
发明人： Robert C. Wingfield, Jr. , Jacob Braslaw , Roy L. Gealer
IPC分类号： C10B53/00 , C10B53/07 , C10B57/04 , C10B57/12
CPC分类号： C10B53/07 , Y02P20/143
摘要： The invention relates to a process for improving the pyrolytic conversion of waste selected from rubber and plastic to low molecular weight olefinic materials by employing basis salt catalysts in the waste mixture. The salts comprise alkali or alkaline earth compounds, particularly sodium carbonate, in an amount of greater than about 1 weight percent based on the waste feed.
摘要翻译：本发明涉及一种通过在废料混合物中使用基础盐催化剂来改善选自橡胶和塑料至低分子量烯烃材料的废物的热解转化的方法。所述盐包括碱金属或碱土金属化合物，特别是碳酸钠，其量大于约1重量％，基于废料。

4. 发明授权

US4765865A Silicon etch rate enhancement 失效
标题翻译：硅蚀刻速率增强
公开(公告)号：US4765865A
公开(公告)日：1988-08-23
申请号：US45658
申请日：1987-05-04
申请人： Roy L. Gealer , Hans K. Karsten
发明人： Roy L. Gealer , Hans K. Karsten
IPC分类号： H01L21/306 , H01L21/3063 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/3063 , H01L21/30608 , Y10T428/12528 , Y10T428/24331
摘要： This invention is directed to a method for increasing the etch rate of a single crystal silicon wafer in an anisotropic etching solution. This method comprises applying a mask material to a portion of one face of the wafer and a metal coating to substantially the entire surface of an opposite face of the wafer which renders the electrode potential of the masked, metal coated single crystal silicon wafer more anodic than that of a masked, single crystal silicon wafer alone, and exposing the coated wafer to a suitable anisotropic etching solution. This method may further comprise applying an external anodic voltage to the masked, metal coated single crystal silicon wafer, which voltage is less than that which causes the electrode potential of the masked, metal coated single crystal silicon wafer to exceed the passivation potential of the masked, single crystal silicon wafer.
摘要翻译：本发明涉及一种用于提高各向异性蚀刻溶液中单晶硅晶片的蚀刻速率的方法。该方法包括将掩模材料施加到晶片的一个面的一部分上，并将金属涂层施加到晶片的相对表面的基本上整个表面，使得被掩蔽的金属涂覆的单晶硅晶片的电极电位比阳极更加阳极，单独的掩模的单晶硅晶片，并将涂覆的晶片暴露于合适的各向异性蚀刻溶液。该方法可以进一步包括将外部阳极电压施加到被掩蔽的金属涂覆的单晶硅晶片，该电压小于使被掩蔽的金属涂覆的单晶硅晶片的电极电位超过被掩蔽的金属涂覆的单晶硅晶片的钝化电位，单晶硅晶片。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式