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1. 发明申请

US20120319299A1 Semiconductor Diode and Method for Producing a Semiconductor Diode 有权
标题翻译：半导体二极管及其制造方法
公开(公告)号：US20120319299A1
公开(公告)日：2012-12-20
申请号：US13580646
申请日：2011-02-10
申请人： Tony Albrecht , Markus Maute , Martin Reufer , Heribert Zull
发明人： Tony Albrecht , Markus Maute , Martin Reufer , Heribert Zull
IPC分类号： H01L29/861 , H01L21/329
CPC分类号： H01L33/38 , H01L33/025 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A semiconductor diode has a first semiconductor layer (102) of a first conductivity type and a second semiconductor layer of a second conductivity type having a doping. The second semiconductor layer has a vertical electrical via region (106) which is connected to the first semiconductor layer and in which the doping is modified in such a way that the electrical via region (106) has the first conductivity type. A method for producing such a semiconductor diode is described.
摘要翻译：半导体二极管具有第一导电类型的第一半导体层（102）和具有掺杂的第二导电类型的第二半导体层。第二半导体层具有连接到第一半导体层的垂直电通孔区域（106），并且其中掺杂被修改为使得电通孔区域（106）具有第一导电类型。描述了制造这种半导体二极管的方法。

2. 发明申请

US20140138730A1 Method of Producing a Plurality of Optoelectronic Semiconductor Chips 审中-公开
标题翻译：制造多种光电半导体芯片的方法
公开(公告)号：US20140138730A1
公开(公告)日：2014-05-22
申请号：US14126033
申请日：2012-06-01
申请人： Martin Reufer , Markus Maute , Tony Albrecht
发明人： Martin Reufer , Markus Maute , Tony Albrecht
IPC分类号： H01L33/24 , H01L33/00
CPC分类号： H01L33/24 , H01L33/0062 , H01L33/007 , H01L33/0095 , H01L33/22 , H01L33/32 , H01L33/44
摘要： A method of producing a plurality of optoelectronic semiconductor chips is provided. At least one trench is incorporated into the semiconductor body by means of at least one structuring process. The trench breaks through the active zone in a vertical direction. At least one cleaning process is performed at least on exposed locations of the semiconductor body in the region of the trench. The cleaning process includes at least one plasma cleaning process, and the plasma cleaning process at least reduces a number and/or a spatial expansion of structuring residues at exposed locations of the semiconductor body at least in the region of the trench. At least one passivation layer is applied at least to exposed locations of the semiconductor body in the region of the trench.
摘要翻译：提供了一种制造多个光电子半导体芯片的方法。通过至少一个结构化工艺将至少一个沟槽结合到半导体本体中。沟槽在垂直方向穿过活动区域。至少在沟槽区域中至少在半导体本体的暴露位置上进行至少一次清洁处理。清洁过程包括至少一个等离子体清洁过程，并且等离子体清洁过程至少在沟槽的区域中减少半导体本体的暴露位置处的构造残余物的数量和/或空间扩展。至少一个钝化层至少施加到沟槽区域中的半导体本体的暴露位置。

3. 发明授权

US08772911B2 Semiconductor diode and method for producing a semiconductor diode 有权
标题翻译：半导体二极管及半导体二极管的制造方法
公开(公告)号：US08772911B2
公开(公告)日：2014-07-08
申请号：US13580646
申请日：2011-02-10
申请人： Tony Albrecht , Markus Maute , Martin Reufer , Heribert Zull
发明人： Tony Albrecht , Markus Maute , Martin Reufer , Heribert Zull
IPC分类号： H01L29/06
CPC分类号： H01L33/38 , H01L33/025 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A semiconductor diode has a first semiconductor layer (102) of a first conductivity type and a second semiconductor layer of a second conductivity type having a doping. The second semiconductor layer has a vertical electrical via region (106) which is connected to the first semiconductor layer and in which the doping is modified in such a way that the electrical via region (106) has the first conductivity type. A method for producing such a semiconductor diode is described.
摘要翻译：半导体二极管具有第一导电类型的第一半导体层（102）和具有掺杂的第二导电类型的第二半导体层。第二半导体层具有连接到第一半导体层的垂直电通孔区域（106），并且其中掺杂被修改为使得电通孔区域（106）具有第一导电类型。描述了制造这种半导体二极管的方法。

4. 发明申请

US20120267662A1 LIGHT-EMITTING DIODE CHIP 审中-公开
标题翻译：发光二极管芯片
公开(公告)号：US20120267662A1
公开(公告)日：2012-10-25
申请号：US13388265
申请日：2010-07-13
申请人： Markus Maute , Tony Albrecht , Anna Kasprzak-Zablocka
发明人： Markus Maute , Tony Albrecht , Anna Kasprzak-Zablocka
IPC分类号： H01L33/60
CPC分类号： H01L33/20 , H01L33/405 , H01L33/44 , H01L2933/0025
摘要： A light-emitting diode chip comprises a semiconductor body (1) having a first (1A) and a second region (1B); an active zone (2) within the semiconductor body (1), which active zone, during the operation of the light-emitting diode chip (100), emits electromagnetic radiation through a radiation coupling-out area (11) formed at least in places by a first main area (111) of the semiconductor body (1); at least one trench (3) in the semiconductor body (1) wherein parts of the semiconductor body (1) are removed in the region of the trench, wherein the at least one trench (3) extends at least as far as the active zone (2), the at least one trench (3) completely surrounds the first region (1A) in a lateral direction, and the second region (1B) completely surrounds the at least one trench (3) and the first region (1A) in a lateral direction.
摘要翻译：发光二极管芯片包括具有第一（1A）和第二区域（1B）的半导体本体（1）; 在所述半导体本体（1）内的有源区（2）中，所述有源区在所述发光二极管芯片（100）的操作期间通过至少形成在所述发光二极管芯片（100）上的辐射耦合区域（11）发射电磁辐射，通过半导体本体（1）的第一主区域（111）; 在所述半导体主体（1）中的至少一个沟槽（3），其中所述半导体主体（1）的部分在所述沟槽的区域中被去除，其中所述至少一个沟槽（3）至少延伸到所述有源区（2）中，所述至少一个沟槽（3）在横向方向上完全围绕所述第一区域（1A），并且所述第二区域（1B）完全围绕所述至少一个沟槽（3）和所述第一区域（1A）横向。

5. 发明授权

US08426843B2 Radiation-emitting semiconductor body 有权
标题翻译：辐射发射半导体体
公开(公告)号：US08426843B2
公开(公告)日：2013-04-23
申请号：US12680620
申请日：2008-08-28
申请人： Tony Albrecht , Stefan Bader , Berthold Hahn
发明人： Tony Albrecht , Stefan Bader , Berthold Hahn
IPC分类号： H01L33/30
CPC分类号： H01L33/06 , H01L33/08 , H01L2924/0002 , H01L2924/00
摘要： Described is a radiation-emitting semiconductor body (1) with an active layer (2) for generation of radiation of a first wavelength (λ1) and a reemission layer (3) which comprises a quantum well structure (4) comprising a quantum layer structure (5) and a barrier layer structure (6). The reemission layer is intended for generation of incoherent radiation of a second wavelength (λ2) by absorption of the radiation of the first wavelength in the barrier layer structure.
摘要翻译：描述了具有用于产生第一波长（λ1）和再发射层（3）的辐射的有源层（2）的辐射发射半导体本体（1），其包括量子阱结构（4），其包括量子层结构（5）和阻挡层结构（6）。再发射层旨在通过吸收势垒层结构中的第一波长的辐射来产生第二波长（λ2）的非相干辐射。

6. 发明授权

US07620088B2 Surface emitting-semiconductor laser component featuring emission in a vertical direction 有权
标题翻译：具有垂直方向发射的表面发射半导体激光器元件
公开(公告)号：US07620088B2
公开(公告)日：2009-11-17
申请号：US11597951
申请日：2005-04-29
申请人： Wilhelm Stein , Tony Albrecht , Peter Brick
发明人： Wilhelm Stein , Tony Albrecht , Peter Brick
IPC分类号： H01S5/00 , H01S3/10
CPC分类号： H01S5/18394 , H01S3/109 , H01S5/0215 , H01S5/0217 , H01S5/0425 , H01S5/141 , H01S5/18355 , H01S5/18386 , H01S2301/18
摘要： A surface-emitting semiconductor laser component, in particular an electrically pumped semiconductor laser component, featuring emission in a vertical direction. The component is provided for the generation of laser radiation by means of an external optical resonator (4, 5). The component comprises a semiconductor body with a semiconductor layer sequence (2) having a lateral main direction of extension and an active zone (3) provided for generation of radiation. A radiation-transmissive contact layer (6) is arranged within the resonator and is electrically conductively connected to the semiconductor body.
摘要翻译：表面发射半导体激光器部件，特别是具有在垂直方向上发射的电泵浦半导体激光器部件。该组件被提供用于通过外部光学谐振器（4,5）产生激光辐射。该部件包括具有半导体层序列（2）的半导体本体，该半导体层序列（2）具有横向主要延伸方向，以及提供用于产生辐射的活动区域（3）。辐射透射接触层（6）布置在谐振器内并与半导体本体导电连接。

7. 发明授权

US07408972B2 Optically pumped semiconductor laser device 有权
标题翻译：光泵浦半导体激光器件
公开(公告)号：US07408972B2
公开(公告)日：2008-08-05
申请号：US10579519
申请日：2004-11-09
申请人： Wolfgang Schmid , Peter Brick , Stephan Lutgen , Tony Albrecht , Franz Eberhard
发明人： Wolfgang Schmid , Peter Brick , Stephan Lutgen , Tony Albrecht , Franz Eberhard
IPC分类号： H01S3/091 , H01S3/08
CPC分类号： H01S5/183 , H01H13/705 , H01H13/86 , H01H2209/07 , H01H2223/008 , H01H2223/034 , H01H2239/032 , H01H2239/034 , H01H2239/038 , H01S3/094084 , H01S5/026 , H01S5/041 , H01S5/101 , H01S5/1082 , H01S5/1085 , H01S5/4031 , H01S5/4056
摘要： An optically pumped semiconductor laser device having a surface-emitting vertical emission region (1) and at least one monolithically integrated pump radiation source (2) for optically pumping the vertical emission region (1). The semiconductor laser device is distinguished by the fact that the pump radiation enters the vertical emission region (1) in the form of partial bundles of rays of radiation with different radiation directions so that the pump radiation and the fundamental mode of the vertical emission region (1) have an overlap which is suitable for the excitation of this fundamental mode. This device is based on the fact that the fundamental mode of the vertical emission region (1) is preferably excited when the spatial intensity distribution of the pump radiation matches the profile of the fundamental mode.
摘要翻译：一种具有表面发射垂直发射区域（1）和至少一个用于光学泵浦垂直发射区域（1）的单片集成泵浦辐射源（2）的光泵浦半导体激光器件。半导体激光器件的特征在于泵辐射以不同辐射方向的部分束辐射线的形式进入垂直发射区域（1），使得泵浦辐射和垂直发射区域的基本模式 1）具有适合于该基本模式的激励的重叠。该装置基于以下事实：当泵浦辐射的空间强度分布与基本模式的轮廓匹配时，优选地激发垂直发射区域（1）的基本模式。

8. 发明申请

US20080073655A1 Optoelectronic semiconductor chip 审中-公开
标题翻译：光电半导体芯片
公开(公告)号：US20080073655A1
公开(公告)日：2008-03-27
申请号：US11901666
申请日：2007-09-17
申请人： Tony Albrecht , Georg Bruderl , Volker Harle , Lutz Hoppel , Martin Strassburg
发明人： Tony Albrecht , Georg Bruderl , Volker Harle , Lutz Hoppel , Martin Strassburg
IPC分类号： H01L31/0236 , H01L33/00
CPC分类号： H01L33/24 , H01L21/02389 , H01L21/0254 , H01L21/02658 , H01L31/02363 , H01L33/007 , H01L2924/0002 , H01S5/1231 , Y02E10/50 , H01L2924/00
摘要： An optoelectronic semiconductor chip comprises a growth substrate with a structured growth area (2) having a multiplicity of elevations (4) and depressions (3), and an active layer sequence (5) applied to the growth area (2).
摘要翻译：光电子半导体芯片包括具有多个高度（4）和凹陷（3）的结构化生长区域（2）的生长衬底和应用于生长区域（2）的活性层序列（5）。

9. 发明授权

US07209506B2 Optically pumped semiconductor device and method for producing it 有权
标题翻译：光泵浦半导体器件及其制造方法
公开(公告)号：US07209506B2
公开(公告)日：2007-04-24
申请号：US10903411
申请日：2004-07-30
申请人： Tony Albrecht
发明人： Tony Albrecht
IPC分类号： H01S5/00 , H01S3/14 , H01S3/091 , H01S3/082
CPC分类号： H01S5/141 , H01S5/026 , H01S5/041 , H01S5/18308 , H01S5/2072 , H01S5/4056
摘要： An optically pumped radiation-emitting semiconductor device with a surface-emitting quantum well structure (10), which has at least one quantum layer (11), and an active layer (8) for generating pump radiation (9) for optically pumping the quantum well structure (10), which is arranged parallel to the quantum layer (11). The semiconductor device has at least one emission region (12), in which the quantum well structure (10) is optically pumped, and at least one pump region (13). The quantum well structure (10) and the active pump layer (8) extend over the pump region (13) and over the emission region (12) of the semiconductor device, and the pump radiation (9) is coupled into the emission region (12) in the lateral direction.
摘要翻译：具有表面发射量子阱结构（10）的光泵浦辐射发射半导体器件（10）具有至少一个量子层（11）和用于产生泵浦辐射的有源层（8），用于光学泵浦量子阱结构（10），其平行于量子层（11）排列。半导体器件具有至少一个发光区域（12），其中量子阱结构（10）被光学泵浦，以及至少一个泵浦区域（13）。量子阱结构（10）和有源泵层（8）在泵浦区域（13）上延伸超过半导体器件的发射区域（12），泵浦辐射（9）耦合到发射区域 12）在横向上。

10. 发明授权

US06979842B2 Opto-electronic component with radiation-transmissive electrical contact layer 有权
标题翻译：具有辐射透射电接触层的光电子元件
公开(公告)号：US06979842B2
公开(公告)日：2005-12-27
申请号：US10749433
申请日：2003-12-31
申请人： Wilhelm Stein , Ralph Wirth , Tony Albrecht
发明人： Wilhelm Stein , Ralph Wirth , Tony Albrecht
IPC分类号： H01L33/44 , H01L33/00
CPC分类号： H01L33/44
摘要： An optoelectronic component with an epitaxial semiconductor layer sequence having an active zone that emits electromagnetic radiation, and at least one electrical contact region having at least one radiation-transmissive electrical contact layer, which contains ZnO and is electrically conductively connected to an outer semiconductor layer. The contact layer is provided with watertight material in such a way that it is substantially protected against moisture.
摘要翻译：具有外延半导体层序列的光电子部件具有发射电磁辐射的有源区，以及至少一个具有至少一个辐射透射电接触层的电接触区，该电接触区含有ZnO并与外部半导体层导电连接。接触层以防水材料的方式设置有防水材料。

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