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1. 发明授权

US06944199B2 Semiconductor laser with lateral current conduction and method for fabricating the semiconductor laser 有权
标题翻译：具有横向电流传导的半导体激光器和用于制造半导体激光器的方法
公开(公告)号：US06944199B2
公开(公告)日：2005-09-13
申请号：US10460823
申请日：2003-06-12
申请人： Bruno Acklin , Martin Behringer , Karl Ebeling , Christian Hanke , Jörg Heerlein , Lutz Korte , Johann Luft , Karl-Heinz Schlereth , Werner Späth , Zeljko Spika
发明人： Bruno Acklin , Martin Behringer , Karl Ebeling , Christian Hanke , Jörg Heerlein , Lutz Korte , Johann Luft , Karl-Heinz Schlereth , Werner Späth , Zeljko Spika
IPC分类号： H01S5/042 , H01S5/16 , H01S5/227 , H01S5/00
CPC分类号： H01S5/16 , H01S5/0421 , H01S5/168 , H01S5/2275
摘要： A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.
摘要翻译：半导体激光器具有半导体本体，其具有第一和第二主要区域，优选地各自设置有接触区域，以及第一和第二反射镜区域。在主要区域之间形成有源层和载流层。载流层具有至少一个带状电阻区域，其相对于谐振器轴线横向延伸，并且与邻近电阻区域的载流层的区域相比，至少部分区域的电阻率增加。

2. 发明授权

US07271419B2 Laser device having a plurality of emission zones 有权
标题翻译：具有多个发射区的激光装置
公开(公告)号：US07271419B2
公开(公告)日：2007-09-18
申请号：US10926903
申请日：2004-08-27
申请人： Martin Behringer , Johann Luft , Bruno Acklin
发明人： Martin Behringer , Johann Luft , Bruno Acklin
IPC分类号： H01L29/18
CPC分类号： H01S5/405 , H01S5/02272 , H01S5/02288 , H01S5/02423
摘要： A laser device having a semiconductor body (1), which has a plurality of active layers (5, 9) arranged vertically one above the other and serving for generating laser radiation. The active layers are subdivided in the transverse direction into a plurality of emission zones (15) and are electrically connected in series in the vertical direction. The semiconductor body (1) is formed in monolithic integrated fashion, and a cooling element (2) is provided on which the semiconductor body (1) is arranged.
摘要翻译：一种具有半导体本体（1）的激光器件，其具有多个有源层（5,9），所述多个有源层（5,9）垂直地彼此排列并用于产生激光辐射。有源层在横向被细分为多个发射区（15），并在垂直方向串联电连接。半导体本体（1）以单片集成的方式形成，并且设置有半导体本体（1）布置在其上的冷却元件（2）。

3. 发明申请

US20050087735A1 Laser device having a plurality of emission zones 有权
标题翻译：具有多个发射区的激光装置
公开(公告)号：US20050087735A1
公开(公告)日：2005-04-28
申请号：US10926903
申请日：2004-08-27
申请人： Martin Behringer , Johann Luft , Bruno Acklin
发明人： Martin Behringer , Johann Luft , Bruno Acklin
IPC分类号： H01S5/026 , H01L31/072 , H01S5/024 , H01S5/30 , H01S5/34 , H01S5/40
CPC分类号： H01S5/405 , H01S5/02272 , H01S5/02288 , H01S5/02423
摘要： A laser device having a semiconductor body (1), which has a plurality of active layers (5, 9) arranged vertically one above the other and serving for generating laser radiation. The active layers are subdivided in the transverse direction into a plurality of emission zones (15) and are electrically connected in series in the vertical direction. The semiconductor body (1) is formed in monolithic integrated fashion, and a cooling element (2) is provided on which the semiconductor body (1) is arranged.
摘要翻译：一种具有半导体本体（1）的激光器件，其具有多个有源层（5,9），所述多个有源层（5,9）垂直地彼此排列并用于产生激光辐射。有源层在横向被细分为多个发射区（15），并在垂直方向串联电连接。半导体本体（1）以单片集成的方式形成，并且设置有半导体本体（1）布置在其上的冷却元件（2）。

4. 发明申请

US20050089073A1 Stacked semiconductor laser diode 有权
公开(公告)号：US20050089073A1
公开(公告)日：2005-04-28
申请号：US10432187
申请日：2001-11-20
申请人： Martin Behringer , Karl Ebeling , Thomas Knodl , Johann Luft
发明人： Martin Behringer , Karl Ebeling , Thomas Knodl , Johann Luft
IPC分类号： H01S5/32 , H01S5/40 , H01S5/00
CPC分类号： H01S5/4043 , H01S5/3095 , H01S5/3201 , H01S5/4087
摘要： The present invention relates to an arrangement of semiconductor diode lasers stacked on top of one another, which is arranged on a substrate (1). A first diode laser (12) is arranged on the substrate (1), and a second diode laser (13) is arranged on the first diode laser (12). Between the first diode laser (12) and the second diode laser (13) there is a contact layer (6). The contact layer (6) comprises a first conductive layer (18) of a first conduction type and a second conductive layer (20) of a second conduction type and an interlayer (19) which is arranged between the first and second conductive layers (18, 20).

5. 发明授权

US06956881B2 Stacked semiconductor laser diode 有权
标题翻译：叠层半导体激光二极管
公开(公告)号：US06956881B2
公开(公告)日：2005-10-18
申请号：US10432187
申请日：2001-11-20
申请人： Martin Behringer , Karl Ebeling , Thomas Knödl , Johann Luft
发明人： Martin Behringer , Karl Ebeling , Thomas Knödl , Johann Luft
IPC分类号： H01S5/32 , H01S5/40 , H01S3/10 , H01S3/14 , H01S5/00
CPC分类号： H01S5/4043 , H01S5/3095 , H01S5/3201 , H01S5/4087
摘要： The present invention relates to an arrangement of semiconductor diode lasers stacked on top of one another, which is arranged on a substrate (1). A first diode laser (12) is arranged on the substrate (1), and a second diode laser (13) is arranged on the first diode laser (12). Between the first diode laser (12) and the second diode laser (13) there is a contact layer (6). The contact layer (6) comprises a first conductive layer (18) of a first conduction type and a second conductive layer (20) of a second conduction type and an interlayer (19) which is arranged between the first and second conductive layers (18, 20).
摘要翻译：本发明涉及堆叠在彼此之上的半导体二极管激光器的布置，其布置在衬底（1）上。第一二极管激光器（12）布置在衬底（1）上，并且第二二极管激光器（13）布置在第一二极管激光器（12）上。在第一二极管激光器（12）和第二二极管激光器（13）之间存在接触层（6）。接触层（6）包括布置在第一和第二导电层（18）之间的第一导电类型的第一导电层（18）和第二导电类型的第二导电层（20）和中间层（19），20）。

6. 发明授权

US07260129B2 Multipartite laser 有权
标题翻译：多部分激光
公开(公告)号：US07260129B2
公开(公告)日：2007-08-21
申请号：US10774727
申请日：2004-02-09
申请人： Martin Behringer , Franz Eberhard , Johann Luft
发明人： Martin Behringer , Franz Eberhard , Johann Luft
IPC分类号： H01S5/00
CPC分类号： H01S5/1021 , H01S5/14 , H01S5/141 , H01S5/18305 , H01S5/18311 , H01S5/4006 , H01S2301/18
摘要： A device for emission of laser radiation includes at least one semiconductor laser having a resonator and a pumped active zone disposed within the resonator. The zone is subdivided into at least two spatially separated active zones by free-radiation regions without lateral wave guidance. Preferably, the laser is at least two semiconductor lasers disposed in series, a row, or a line, each having an antireflection coating on at least one side. The lasers have outer mirror elements at an end of the lasers disposed in series and the outer mirror elements form the resonator. A laser configuration includes two opposite semiconductor lasers from which a fundamental mode is in each case imaged into the active zone of the opposite semiconductor laser. The laser configuration has an emerging laser beam with little divergence.
摘要翻译：用于发射激光辐射的装置包括至少一个具有谐振器的半导体激光器和设置在谐振器内的泵浦有源区。该区域通过自由辐射区域被细分为至少两个空间分离的有源区域，而没有横向波导。优选地，激光器是至少两个串联布置的半导体激光器，一排或一条线，每个在至少一侧具有抗反射涂层。激光器在激光器的端部具有串联布置的外镜元件，并且外镜元件形成谐振器。激光器配置包括两个相对的半导体激光器，在每个情况下，基本模式被成像到相对的半导体激光器的有源区。激光器配置有一个新兴的激光束，几乎没有发散。

7. 发明授权

US07653111B2 Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof 有权
标题翻译：光学泵浦，表面发射半导体激光器件及其制造方法
公开(公告)号：US07653111B2
公开(公告)日：2010-01-26
申请号：US11249094
申请日：2005-10-12
申请人： Tony Albrecht , Norbert Linder , Johann Luft
发明人： Tony Albrecht , Norbert Linder , Johann Luft
IPC分类号： H01S5/00
CPC分类号： H01S5/18305 , B82Y20/00 , H01S3/1062 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/1017 , H01S5/1071 , H01S5/1075 , H01S5/1082 , H01S5/141 , H01S5/16 , H01S5/183 , H01S5/1835 , H01S5/2022 , H01S5/2214 , H01S5/34313 , H01S5/3432 , H01S5/4031 , H01S5/4056 , H01S2301/166
摘要： The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.
摘要翻译：本发明涉及一种光泵浦表面发射半导体激光器件，其具有至少一个辐射产生量子阱结构和用于光学泵浦量子阱结构的至少一个泵浦辐射源，由此泵浦辐射源包括边缘发射半导体结构体。辐射产生量子阱结构和边缘发射半导体结构在公共衬底上外延生长。利用这种单片制造的半导体激光装置，可以有利地实现发射量子阱结构的非常有效和均匀的光泵浦。还规定了制造本发明的半导体激光器件的方法。

8. 发明申请

US20050008056A1 Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof 有权
公开(公告)号：US20050008056A1
公开(公告)日：2005-01-13
申请号：US10902342
申请日：2004-07-29
申请人： Tony Albrecht , Norbert Linder , Johann Luft
发明人： Tony Albrecht , Norbert Linder , Johann Luft
IPC分类号： H01S5/026 , H01S5/04 , H01S5/10 , H01S5/14 , H01S5/183 , H01S5/34 , H01S5/40 , H01S5/00 , H01S3/091
CPC分类号： H01S5/18305 , B82Y20/00 , H01S3/1062 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/1017 , H01S5/1071 , H01S5/1075 , H01S5/1082 , H01S5/141 , H01S5/16 , H01S5/183 , H01S5/1835 , H01S5/2022 , H01S5/2214 , H01S5/34313 , H01S5/3432 , H01S5/4031 , H01S5/4056 , H01S2301/166
摘要： The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.

9. 发明授权

US08115909B2 Sensor system with a lighting device and a detector device 有权
标题翻译：具有照明装置和检测装置的传感器系统
公开(公告)号：US08115909B2
公开(公告)日：2012-02-14
申请号：US12393147
申请日：2009-02-26
申请人： Martin Rudolf Behringer , Joerg Heerlein , Johann Luft
发明人： Martin Rudolf Behringer , Joerg Heerlein , Johann Luft
IPC分类号： G01C3/08
CPC分类号： G01V8/20 , H01S5/2036 , H01S5/227 , H01S5/3095 , H01S5/4018 , H01S5/4043 , H01S5/4087
摘要： A sensor system with a lighting device and a detector device is specified. The lighting device is provided for emitting laser radiation of a first wavelength and laser radiation of a second wavelength different from the first. The detector device is provided for detecting electromagnetic radiation of the first and the second wavelength.
摘要翻译：具有照明装置和检测装置的传感器系统。照明装置用于发射第一波长的激光辐射和不同于第一波长的第二波长的激光辐射。检测器装置用于检测第一和第二波长的电磁辐射。

10. 发明申请

US20090244515A1 SENSOR SYSTEM WITH A LIGHTING DEVICE AND A DETECTOR DEVICE 有权
标题翻译：具有照明装置的传感器系统和检测器装置
公开(公告)号：US20090244515A1
公开(公告)日：2009-10-01
申请号：US12393147
申请日：2009-02-26
申请人： Martin Rudolf Behringer , Joerg Heerlein , Johann Luft
发明人： Martin Rudolf Behringer , Joerg Heerlein , Johann Luft
IPC分类号： G01C3/08 , H01S5/026 , G01P3/36 , G02F1/01 , H01J43/00
CPC分类号： G01V8/20 , H01S5/2036 , H01S5/227 , H01S5/3095 , H01S5/4018 , H01S5/4043 , H01S5/4087
摘要： A sensor system with a lighting device and a detector device is specified. The lighting device is provided for emitting laser radiation of a first wavelength and laser radiation of a second wavelength different from the first. The detector device is provided for detecting electromagnetic radiation of the first and the second wavelength.
摘要翻译：具有照明装置和检测装置的传感器系统。照明装置用于发射第一波长的激光辐射和不同于第一波长的第二波长的激光辐射。检测器装置用于检测第一和第二波长的电磁辐射。

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