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1. 发明授权

US06610822B2 Purification process 失效
公开(公告)号：US06610822B2
公开(公告)日：2003-08-26
申请号：US09920497
申请日：2001-08-01
申请人： Martin A. Chandler , Kent E. Goklen , Steven S. Lee , David J. Roush
发明人： Martin A. Chandler , Kent E. Goklen , Steven S. Lee , David J. Roush
IPC分类号： C07K114
CPC分类号： C07K7/56
摘要： There is disclosed a process for purifying a natural product using a two-phase, multi-solvent system followed by vacuum concentration and back extraction. The method allows for the removal of impurities by controlling the polarity balance of a two-phase system by manipulating the proportions of the four solvents and subsequently the relative distribution of the product versus the impurities.

2. 发明授权

US06943413B2 BI-CMOS integrated circuit 失效
标题翻译： BI-CMOS集成电路
公开(公告)号：US06943413B2
公开(公告)日：2005-09-13
申请号：US10428592
申请日：2003-05-01
申请人： Steven S. Lee
发明人： Steven S. Lee
IPC分类号： H01L21/8249 , H01L29/76
CPC分类号： H01L21/8249
摘要： The invention concerns a BI-CMOS process, in which Field-Effect Transistors (FETs) and Bipolar Junction Transistors (BJTs) are manufactured on a common substrate. In several processing steps, FET structures are formed simultaneously with BJT structures. For example, in one step, polysilicon gate electrodes for the FETs and polysilicon emitters for the BJTs are formed simultaneously. In another aspect of the invention, a polysilicon layer is used to reduce channeling which would otherwise occur during an implant step.
摘要翻译：本发明涉及一种BI-CMOS工艺，其中在公共衬底上制造场效应晶体管（FET）和双极结晶体管（BJT）。在几个处理步骤中，与BJT结构同时形成FET结构。例如，在一个步骤中，同时形成用于BJT的用于FET的多晶硅栅电极和多晶硅发射极。在本发明的另一方面，多晶硅层用于减少否则在植入步骤期间会发生的沟道化。

3. 发明授权

US5904535A Method of fabricating a bipolar integrated structure 失效
标题翻译：制造双极一体化结构的方法
公开(公告)号：US5904535A
公开(公告)日：1999-05-18
申请号：US748969
申请日：1996-11-13
申请人： Steven S. Lee
发明人： Steven S. Lee
IPC分类号： H01L21/8249 , H01L21/84 , H01L27/12 , H01L21/331
CPC分类号： H01L21/84 , H01L21/8249 , H01L27/1203
摘要： A process for fabricating a bipolar transistor on a silicon-on-insulator substrate which includes etching a bipolar transistor area into the substrate, wherein the bipolar transistor area has substantially vertical sidewalls and a bottom, and forming a buried collector in bottom of the bipolar transistor area. Polysilicon sidewalls are formed adjacent to the vertical sidewalls in the bipolar transistor area, wherein the polysilicon sidewalls are connected to the buried collector. The polysilicon sidewalls are oxidized to form a layer of oxidized polysilicon. Oxide sidewalls are formed on the oxidized polysilicon sidewalls, and epitaxial silicon is formed to fill the bipolar transistor area. A base and an emitter are formed for the bipolar transistor, within the epitaxial barrier.
摘要翻译：一种用于在绝缘体上硅衬底上制造双极晶体管的工艺，其包括将双极晶体管区域蚀刻到衬底中，其中双极晶体管区域具有基本垂直的侧壁和底部，并且在双极晶体管的底部形成掩埋集电极区。多晶硅侧壁形成在双极晶体管区域中与垂直侧壁相邻，其中多晶硅侧壁连接到埋地集电器。多晶硅侧壁被氧化以形成氧化多晶硅层。在氧化的多晶硅侧壁上形成氧化物侧壁，并且形成外延硅以填充双极晶体管区域。在外延阻挡层内为双极晶体管形成基极和发射极。

4. 发明授权

US5672905A Semiconductor fuse and method 失效
标题翻译：半导体保险丝和方法
公开(公告)号：US5672905A
公开(公告)日：1997-09-30
申请号：US935306
申请日：1992-08-26
申请人： Steven S. Lee , Gayle W. Miller
发明人： Steven S. Lee , Gayle W. Miller
IPC分类号： H01L21/768 , H01L23/525 , H01L29/00
CPC分类号： H01L21/76888 , H01L23/5256 , H01L2924/0002
摘要： A semiconductor fuse and method for fabricating the same An insulating layer is provided and a trench formed therein. A fusible link is then formed across the insulating layer and trench and conformal therewith. The link has a break region of minimum thickness and width at an intersection of a sidewall and bottom surface of the trench.
摘要翻译：半导体熔丝及其制造方法设置有绝缘层，并形成有沟槽。然后在绝缘层和沟槽之间形成可熔连接并与其保持共形。连接件在沟槽的侧壁和底面的交点处具有最小厚度和宽度的断裂区域。

5. 发明授权

US5581861A Method for making a solid-state ink jet print head 失效
标题翻译：制造固态喷墨打印头的方法
公开(公告)号：US5581861A
公开(公告)日：1996-12-10
申请号：US460485
申请日：1995-06-02
申请人： Steven S. Lee , Gayle W. Miller
发明人： Steven S. Lee , Gayle W. Miller
IPC分类号： B41J2/045 , B41J2/055 , B41J2/16 , H01L41/22
CPC分类号： B41J2/1629 , B41J2/161 , B41J2/1623 , B41J2/1631 , B41J2/1634 , B41J2/1639 , B41J2/1642 , B41J2002/14387 , Y10T29/42 , Y10T29/49401
摘要： An ink-jet print head comprises an ink drive unit formed on a first substrate and an ink reservoir unit formed on a second substrate. The ink drive unit includes a thin film piezoelectric transducer formed on one side of the substrate. The reservoir unit includes an etched cavity in the substrate for forming an ink reservoir, the cavity having an aperture in the base extending through the substrate to form an ink nozzle. The ink drive and ink reservoir units are bonded together with the piezoelectric transducer within the ink reservoir. Activating the transducer expels ink from the reservoir via the ink nozzle.
摘要翻译：喷墨打印头包括形成在第一基板上的墨驱动单元和形成在第二基板上的墨存储单元。墨驱动单元包括形成在基板一侧的薄膜压电换能器。储存器单元包括用于形成油墨储存器的衬底中的蚀刻腔，该空腔在基体中具有延伸穿过衬底的孔以形成油墨喷嘴。墨水驱动器和墨水储存器单元与墨水储存器内的压电换能器结合在一起。激活传感器通过墨水喷嘴从储存器排出墨水。

6. 发明授权

US5332957A Battery module and charger 失效
标题翻译：电池模块和充电器
公开(公告)号：US5332957A
公开(公告)日：1994-07-26
申请号：US937569
申请日：1992-08-31
申请人： Steven S. Lee
发明人： Steven S. Lee
IPC分类号： H02J7/00 , H02J1/00
CPC分类号： H02J7/0006
摘要： A battery module (200) includes a preselected one (105) of a plurality of discrete electrodes (102-105) that is either electrically uncoupled, or is coupled in a fashion that is redundant with respect to one of the other electrodes (102-104). A battery module constructed in this fashion is compatible with both a microprocessor controlled rapid charger (400) and a trickle charger (500) constructed from simple discrete circuitry.
摘要翻译：电池模块（200）包括多个分立电极（102-105）中的预选的一个（105），所述多个分立电极（102-105）电解脱耦合，或者以相对于其它电极（102- 104）。以这种方式构造的电池模块与由简单的离散电路构成的微处理器控制的快速充电器（400）和涓流充电器（500）兼容。

7. 发明授权

US5534860A Multiple key array 失效
标题翻译：多重键阵列
公开(公告)号：US5534860A
公开(公告)日：1996-07-09
申请号：US236797
申请日：1994-05-02
申请人： Joseph E. Phillips , John J. Oskorep , Steven S. Lee
发明人： Joseph E. Phillips , John J. Oskorep , Steven S. Lee
IPC分类号： H03M11/20 , H03M11/24
CPC分类号： H03M11/24 , H03M11/20
摘要： An apparatus for and method of scanning a key array (101-116) uses two or three scan lines (134 and 135 or 308, 309, and 310), thereby limiting the need for an excessive number of input/output lines of a processor (136). A separate resistor ladder (301,302, 303) is provided for each dimension of keys, including row, column, and/or matrix. A minimal number of parts is also required to implement the resistor ladder (301,302, 303). A reference conductor (311), a row conductor (312), a column conductor (313), and, if desired, a matrix conductor (314) each run under each key, such that when a different key is depressed, a unique combination of voltages appears at the scan lines (134 and 135 or 308, 309, and 310) for the resistor ladders (301, 302, 303).
摘要翻译：用于扫描键阵列（101-116）的装置和方法使用两条或三条扫描线（134和135或308,309和310），从而限制对处理器的输入/输出线数量过多的需要（136）。为每个尺寸的键提供单独的电阻梯（301,302,303），包括行，列和/或矩阵。实现电阻梯（301,302,303）也需要最少数量的部件。参考导体（311），行导体（312），列导体（313）以及如果需要的话，每个键下的矩阵导体（314），使得当按下不同的键时，独特的组合的电压出现在电阻梯（301,302,303）的扫描线（134和135或308,309和310）处。

8. 发明授权

US5459501A Solid-state ink-jet print head 失效
标题翻译：固态喷墨打印头
公开(公告)号：US5459501A
公开(公告)日：1995-10-17
申请号：US11592
申请日：1993-02-01
申请人： Steven S. Lee , Gayle W. Miller
发明人： Steven S. Lee , Gayle W. Miller
IPC分类号： B41J2/045 , B41J2/055 , B41J2/16
CPC分类号： B41J2/1629 , B41J2/161 , B41J2/1623 , B41J2/1631 , B41J2/1634 , B41J2/1639 , B41J2/1642 , B41J2002/14387 , Y10T29/42 , Y10T29/49401
摘要： An ink-jet print head comprises an ink drive unit formed on a first substrate and an ink reservoir unit formed on a second substrate. The ink drive unit includes a thin film piezoelectric transducer formed on one side of the substrate. The reservoir unit includes an etched cavity in the substrate for forming an ink reservoir, the cavity having an aperture in the base extending through the substrate to form an ink nozzle. The ink drive and ink reservoir units are bonded together with the piezoelectric transducer within the ink reservoir. Activating the transducer expels ink from the reservoir via the ink nozzle.
摘要翻译：喷墨打印头包括形成在第一基板上的墨驱动单元和形成在第二基板上的墨存储单元。墨驱动单元包括形成在基板一侧的薄膜压电换能器。储存器单元包括用于形成油墨储存器的衬底中的蚀刻腔，该空腔在基体中具有延伸穿过衬底的孔以形成油墨喷嘴。墨水驱动器和墨水储存器单元与墨水储存器内的压电换能器结合在一起。激活传感器通过墨水喷嘴从储存器排出墨水。

9. 发明授权

US5443996A Process for forming titanium silicide local interconnect 失效
标题翻译：用于形成硅化钛局部互连的工艺
公开(公告)号：US5443996A
公开(公告)日：1995-08-22
申请号：US522775
申请日：1990-05-14
申请人： Steven S. Lee , Kenneth P. Fuchs , Gayle W. Miller
发明人： Steven S. Lee , Kenneth P. Fuchs , Gayle W. Miller
IPC分类号： H01L21/3205 , H01L21/28 , H01L21/336 , H01L21/768 , H01L23/52 , H01L29/78 , H01L21/44
CPC分类号： H01L21/76895 , H01L2924/0002 , Y10S148/015 , Y10S148/019 , Y10S148/147
摘要： A process for forming a titanium silicide local interconnect between electrodes separated by a dielectric insulator on an integrated circuit. A first layer of titanium is formed on the insulator, and a layer of silicon is formed on the titanium. The silicon layer is masked and etched to form a silicon strip connecting the electrodes, and an overlying second layer of titanium is formed over the silicon strip. The titanium and silicon are heated to form nonsilicidized titanium over a strip of titanium silicide, and the nonsilicidized titanium is removed.
摘要翻译：一种用于在由集成电路上的介质绝缘体隔开的电极之间形成钛硅化物局部互连的工艺。在绝缘体上形成第一层钛，在钛上形成一层硅。掩模和蚀刻硅层以形成连接电极的硅带，并且在硅带上形成覆盖的第二层钛。钛和硅被加热以在硅化钛条上形成非硅化钛，并除去非硅化的钛。

10. 发明授权

US5288666A Process for forming self-aligned titanium silicide by heating in an oxygen rich environment 失效
标题翻译：通过在富氧环境中加热来形成自对准钛硅化物的方法
公开(公告)号：US5288666A
公开(公告)日：1994-02-22
申请号：US496720
申请日：1990-03-21
申请人： Steven S. Lee
发明人： Steven S. Lee
IPC分类号： H01L21/28 , H01L21/285 , H01L21/336 , H01L29/78 , H01L21/44
CPC分类号： H01L29/6659 , H01L21/28518 , Y10S148/141 , Y10S148/147
摘要： A process for producing self-aligned titanium silicide. A silicon substrate is provided, silicon electrode and oxide insulator regions are formed on the substrate, and a titanium layer overlying the electrode and insulator regions is formed. The device is heated in an oxygen rich environment to form titanium silicide overlying the electrode regions and to form titanium oxide overlying the insulator regions and metal silicide.
摘要翻译：一种生产自对准钛硅化物的方法。提供硅衬底，在衬底上形成硅电极和氧化物绝缘体区域，并且形成覆盖电极和绝缘体区域的钛层。该装置在富氧环境中被加热以形成覆盖电极区域的硅化钛，并形成覆盖绝缘体区域和金属硅化物的氧化钛。

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