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1. 发明申请

US20110165755A1 Semiconductor Component Arrangement Comprising a Trench Transistor 有权
标题翻译：包括沟槽晶体管的半导体元件布置
公开(公告)号：US20110165755A1
公开(公告)日：2011-07-07
申请号：US12987847
申请日：2011-01-10
申请人： Markus Zundel , Franz Hirler , Norbert Krischke
发明人： Markus Zundel , Franz Hirler , Norbert Krischke
IPC分类号： H01L21/28
CPC分类号： H01L29/7827 , H01L21/743 , H01L27/0733 , H01L28/40 , H01L29/0696 , H01L29/0878 , H01L29/407 , H01L29/41766 , H01L29/66734 , H01L29/7803 , H01L29/7804 , H01L29/7809 , H01L29/7813 , H01L29/7816 , H01L29/945
摘要： Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least an gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps.
摘要翻译：公开了一种用于制造半导体元件布置的半导体元件布置和方法。该方法包括产生沟槽晶体管结构，其中至少一个沟槽设置在半导体本体中，并且至少一个栅电极设置在至少一个沟槽中。电极结构设置在至少一个另外的沟槽中并且包括至少一个电极。晶体管结构的至少一个沟槽和至少一个另外的沟槽通过公共工艺步骤产生。此外，电极结构的至少一个电极和栅电极通过常规的工艺步骤制造。

2. 发明申请

US20070190739A1 Semiconductor having optimized insulation structure and process for producing the semiconductor 有权
标题翻译：半导体具有优化的绝缘结构和制造半导体的工艺
公开(公告)号：US20070190739A1
公开(公告)日：2007-08-16
申请号：US11392363
申请日：2006-03-29
申请人： Markus Zundel , Norbert Krischke
发明人： Markus Zundel , Norbert Krischke
IPC分类号： H01L21/76 , H01L21/26
CPC分类号： H01L21/76243 , H01L29/42384 , H01L29/66787 , H01L29/78696
摘要： A semiconductor having an optimized insulation structure which is simple and inexpensive to produce and can be made smaller than LOCOS insulation structures is disclosed. An implantation mask on a surface of a semiconductor substrate is used to implant elements into the semiconductor substrate, which elements, on thermal activation, form an insulation region together with the further elements of the semiconductor substrate. The thermal activation is effected by means of laser irradiation, during which the semiconductor substrate is briefly melted and then recrystallizes during the subsequent cooling, so that the implanted elements form the insulation region together with the further elements of the semiconductor substrate.
摘要翻译：公开了具有优化的绝缘结构的半导体，该绝缘结构简单且便宜并且可以制造成小于LOCOS绝缘结构。在半导体衬底的表面上的注入掩模用于将元件注入到半导体衬底中，这些元件在热激活时与半导体衬底的其它元件一起形成绝缘区域。热激活通过激光照射来实现，在此期间半导体衬底被短暂熔化，然后在随后的冷却期间再结晶，使得注入的元件与半导体衬底的其它元件一起形成绝缘区域。

3. 发明申请

US20060071700A1 Semiconductor device with temperature sensor 有权
标题翻译：具有温度传感器的半导体器件
公开(公告)号：US20060071700A1
公开(公告)日：2006-04-06
申请号：US11240853
申请日：2005-09-30
申请人： Thorsten Meyer , Norbert Krischke , Markus Zundel
发明人： Thorsten Meyer , Norbert Krischke , Markus Zundel
IPC分类号： H01L35/00
CPC分类号： H01L23/34 , G01K7/01 , H01L27/0705 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device is disclosed. In one embodiment the semiconductor device includes a semiconductor body of which is integrated a temperature sensor for measuring the temperature prevailing in the semiconductor body. The temperature sensor has a MOS transistor and a bipolar transistor. The MOS transistor is integrated into the semiconductor body nd configured such that the substhreshold current intensity of the MOS transistor is proportional to the temperature to be measured. The subthreshold current of the MOS transistor is amplified by the bipolar transistor.
摘要翻译：公开了一种半导体器件。在一个实施例中，半导体器件包括半导体本体，其集成有用于测量半导体主体中的温度的温度传感器。温度传感器具有MOS晶体管和双极晶体管。 MOS晶体管被集成到半导体主体nd中，其被配置为使得MOS晶体管的阈值电流强度与要测量的温度成比例。 MOS晶体管的亚阈值电流由双极晶体管放大。

4. 发明授权

US08779506B2 Semiconductor component arrangement comprising a trench transistor 有权
标题翻译：半导体元件布置包括沟槽晶体管
公开(公告)号：US08779506B2
公开(公告)日：2014-07-15
申请号：US12987852
申请日：2011-01-10
申请人： Markus Zundel , Franz Hirler , Norbert Krischke
发明人： Markus Zundel , Franz Hirler , Norbert Krischke
IPC分类号： H01L27/06
CPC分类号： H01L27/0733 , H01L21/02233 , H01L21/02255 , H01L21/32105 , H01L21/743 , H01L21/823437 , H01L27/0629 , H01L28/40 , H01L28/60 , H01L29/0696 , H01L29/0865 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/66704 , H01L29/66712 , H01L29/66734 , H01L29/7803 , H01L29/7804 , H01L29/7809 , H01L29/7811 , H01L29/7813 , H01L29/7816 , H01L29/7823 , H01L29/7825 , H01L29/945
摘要： Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least an gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps.
摘要翻译：公开了一种用于制造半导体元件布置的半导体元件布置和方法。该方法包括产生沟槽晶体管结构，其中至少一个沟槽设置在半导体本体中，并且至少一个栅电极设置在至少一个沟槽中。电极结构设置在至少一个另外的沟槽中并且包括至少一个电极。晶体管结构的至少一个沟槽和至少一个另外的沟槽通过公共工艺步骤产生。此外，电极结构的至少一个电极和栅电极通过常规的工艺步骤制造。

5. 发明申请

US20110089528A1 SEMICONDUCTOR HAVING OPTIMIZED INSULATION STRUCTURE AND PROCESS FOR PRODUCING THE SEMICONDUCTOR 有权
标题翻译：具有优化绝缘结构的半导体和生产半导体的工艺
公开(公告)号：US20110089528A1
公开(公告)日：2011-04-21
申请号：US12977351
申请日：2010-12-23
申请人： Markus Zundel , Norbert Krischke
发明人： Markus Zundel , Norbert Krischke
IPC分类号： H01L23/58
CPC分类号： H01L21/76243 , H01L29/42384 , H01L29/66787 , H01L29/78696
摘要： A semiconductor having an optimized insulation structure which is simple and inexpensive to produce and can be made smaller than LOCOS insulation structures is disclosed. An implantation mask on a surface of a semiconductor substrate is used to implant elements into the semiconductor substrate, which elements, on thermal activation, form an insulation region together with the further elements of the semiconductor substrate. The thermal activation is effected by means of laser irradiation, during which the semiconductor substrate is briefly melted and then recrystallizes during the subsequent cooling, so that the implanted elements form the insulation region together with the further elements of the semiconductor substrate.
摘要翻译：公开了具有优化的绝缘结构的半导体，该绝缘结构简单且便宜并且可以制造成小于LOCOS绝缘结构。在半导体衬底的表面上的注入掩模用于将元件注入到半导体衬底中，这些元件在热激活时与半导体衬底的其它元件一起形成绝缘区域。热激活通过激光照射来实现，在此期间半导体衬底被短暂熔化，然后在随后的冷却期间再结晶，使得注入的元件与半导体衬底的其它元件一起形成绝缘区域。

6. 发明申请

US20060071276A1 Field effect trench transistor 有权
标题翻译：场效应沟槽晶体管
公开(公告)号：US20060071276A1
公开(公告)日：2006-04-06
申请号：US11230705
申请日：2005-09-20
申请人： Markus Zundel , Norbert Krischke , Thorsten Meyer
发明人： Markus Zundel , Norbert Krischke , Thorsten Meyer
IPC分类号： H01L23/62
CPC分类号： H01L29/7808 , H01L27/0255 , H01L29/0696 , H01L29/7813 , H01L29/866
摘要： One embodiment of the invention relates to a field effect trench transistor with a multiplicity of transistor cells that are arranged like an array and whose gate electrodes are arranged in active trenches formed in a semiconductor body. Inactive trenches are arranged in the array of the transistor cells, there being no gate electrodes situated in said inactive trenches, and a series of polysilicon diodes are integrated in one or more of the inactive trenches which diodes, for protection against damage to the gate oxide through ESD pulses, are contact-connected to a source metallization at one of their ends and to a gate metallization at their other end, and/or alternatively or additionally one or more polysilicon zener diodes connected in series is or are integrated in the inactive trench or trenches and contact-connected to the gate metallization by one of its or their ends and to drain potential by its or their other end.
摘要翻译：本发明的一个实施例涉及具有多个晶体管单元的场效应沟槽晶体管，其排列成阵列并且其栅电极被布置在形成于半导体本体中的有源沟槽中。在晶体管单元的阵列中布置非活性沟槽，不存在位于所述非活性沟槽中的栅电极，并且一系列多晶硅二极管集成在一个或多个非活性沟槽中，这些二极管用于防止对栅极氧化物的损伤通过ESD脉冲，在它们的一端处的源极金属化和其另一端的栅极金属化接触连接，和/或可选地或另外地一个或多个串联连接的多晶硅齐纳二极管被集成在非活性沟槽中或沟槽，并且通过其端点之一与栅极金属化接触连接，并通过其或其另一端漏极电位。

7. 发明申请

US20050258464A1 Field effect power transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US20050258464A1
公开(公告)日：2005-11-24
申请号：US11118609
申请日：2005-04-29
申请人： Markus Zundel , Norbert Krischke
发明人： Markus Zundel , Norbert Krischke
IPC分类号： H01L27/02 , H01L27/108 , H01L29/06 , H01L29/78
CPC分类号： H01L29/7815 , H01L27/0211 , H01L29/0696 , H01L29/7803 , H01L29/7804 , H01L29/7813
摘要： A power transistor is disclosed. In one embodiment, the power transistor has a cell array including a semiconductor body having a plurality of transistor cells with gate electrodes and with body and source electrode regions and at least one temperature sensing device integrated in the semiconductor body. The temperature sensing device is formed in a selected sense zone within the cell array, and the transistor cells lying in at least one zone of the cell array that is directly adjacent to the sense zone have an increased W/L ratio of their channel width (W) to their channel length (L) compared with the other transistor cells of the cell array.
摘要翻译：公开了功率晶体管。在一个实施例中，功率晶体管具有包括半导体本体的单元阵列，半导体本体具有多个具有栅电极的晶体管单元，并具有主体和源极电极区域以及集成在半导体本体中的至少一个温度感测器件。温度感测装置形成在电池阵列内的选定的感测区域中，并且位于与感测区域直接相邻的电池阵列的至少一个区域中的晶体管单元具有增加其沟道宽度的W / L比（ W）与其单元阵列的其它晶体管单元相比其沟道长度（L）。

8. 发明授权

US08120135B2 Transistor 有权
标题翻译：晶体管
公开(公告)号：US08120135B2
公开(公告)日：2012-02-21
申请号：US12704034
申请日：2010-02-11
申请人： Norbert Krischke , Nicola Vannucci , Sven Lanzerstorfer , Thomas Ostermann , Mathias Racki , Markus Zundel
发明人： Norbert Krischke , Nicola Vannucci , Sven Lanzerstorfer , Thomas Ostermann , Mathias Racki , Markus Zundel
IPC分类号： H01L29/76
CPC分类号： H01L29/7811 , H01L27/0207 , H01L29/0642 , H01L29/0653 , H01L29/0696 , H01L29/407 , H01L29/42368 , H01L29/7803 , H01L29/7813 , H01L29/7821
摘要： A transistor has a cell array with two or more transistor cells, a temperature sensor, which is integrated in the cell array or is adjacent to the cell array, and an isolation structure. The isolation structure isolates the temperature sensor from the cell array, and has an isolation trench, which is arranged between the cell array and the temperature sensor. The distance between the temperature sensor and the active transistor cell that is closest to the temperature sensor corresponds approximately to the pitch between active transistor cells within the cell array.
摘要翻译：晶体管具有具有两个或多个晶体管单元的单元阵列，集成在单元阵列中或与单元阵列相邻的温度传感器和隔离结构。隔离结构将温度传感器与电池阵列隔离，并且具有隔离沟槽，其布置在电池阵列和温度传感器之间。最靠近温度传感器的温度传感器和有源晶体管单元之间的距离大致对应于单元阵列内的有源晶体管单元之间的间距。

9. 发明申请

US20100207206A1 TRANSISTOR 有权
标题翻译：晶体管
公开(公告)号：US20100207206A1
公开(公告)日：2010-08-19
申请号：US12704034
申请日：2010-02-11
申请人： Norbert Krischke , Nicola Vannucci , Sven Lanzerstorfer , Thomas Ostermann , Mathias Racki , Markus Zundel
发明人： Norbert Krischke , Nicola Vannucci , Sven Lanzerstorfer , Thomas Ostermann , Mathias Racki , Markus Zundel
IPC分类号： H01L29/78
CPC分类号： H01L29/7811 , H01L27/0207 , H01L29/0642 , H01L29/0653 , H01L29/0696 , H01L29/407 , H01L29/42368 , H01L29/7803 , H01L29/7813 , H01L29/7821
摘要： A transistor has a cell array with two or more transistor cells, a temperature sensor, which is integrated in the cell array or is adjacent to the cell array, and an isolation structure. The isolation structure isolates the temperature sensor from the cell array, and has an isolation trench, which is arranged between the cell array and the temperature sensor. The distance between the temperature sensor and the active transistor cell that is closest to the temperature sensor corresponds approximately to the pitch between active transistor cells within the cell array.
摘要翻译：晶体管具有具有两个或多个晶体管单元的单元阵列，集成在单元阵列中或与单元阵列相邻的温度传感器和隔离结构。隔离结构将温度传感器与电池阵列隔离，并且具有隔离沟槽，其布置在电池阵列和温度传感器之间。最靠近温度传感器的温度传感器和有源晶体管单元之间的距离大致对应于单元阵列内的有源晶体管单元之间的间距。

10. 发明申请

US20070215920A1 Semiconductor component arrangement comprising a trench transistor 有权
标题翻译：半导体元件布置包括沟槽晶体管
公开(公告)号：US20070215920A1
公开(公告)日：2007-09-20
申请号：US11715275
申请日：2007-03-07
申请人： Markus Zundel , Franz Hirler , Norbert Krischke
发明人： Markus Zundel , Franz Hirler , Norbert Krischke
IPC分类号： H01L29/76
CPC分类号： H01L29/7816 , H01L21/743 , H01L27/0733 , H01L28/40 , H01L29/0696 , H01L29/407 , H01L29/41766 , H01L29/66734 , H01L29/7803 , H01L29/7804 , H01L29/7809 , H01L29/7813 , H01L29/945
摘要： Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least a gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises an at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps.
摘要翻译：公开了一种用于制造半导体元件布置的半导体元件布置和方法。该方法包括产生沟槽晶体管结构，其中至少一个沟槽设置在半导体本体中，并且至少一个栅电极设置在该至少一个沟槽中。电极结构设置在至少一个另外的沟槽中，并且包括至少一个电极。晶体管结构的至少一个沟槽和至少一个另外的沟槽通过公共工艺步骤产生。此外，电极结构的至少一个电极和栅电极通过常规的工艺步骤制造。

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