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1. 发明授权

US08299473B1 Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors 有权
标题翻译：使用非极性或半极性含镓材料和透明荧光体的极化白光装置
公开(公告)号：US08299473B1
公开(公告)日：2012-10-30
申请号：US12754886
申请日：2010-04-06
申请人： Mark P. D'Evelyn , Rajat Sharma , Eric M. Hall , Daniel F. Feezell
发明人： Mark P. D'Evelyn , Rajat Sharma , Eric M. Hall , Daniel F. Feezell
IPC分类号： H01L27/15 , H01L33/00
CPC分类号： H01L33/50 , H01L33/16 , H01L33/32 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/505 , H01L33/507 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.
摘要翻译：发光器件包括具有覆盖表面区域的表面区域和发光二极管的衬底。发光二极管制造在含有半极性或非极性GaN的衬底上并且发射第一波长的电磁辐射。二极管包括以电子波函数和空穴波函数为特征的量子阱区域。电子波函数和空穴波函数在量子阱区域的预定空间区域内基本上重叠。该器件具有覆盖发光二极管的透明磷光体。磷光体被基本上极化的发射激发以发射第二波长的电磁辐射。

2. 发明授权

US09531164B2 Optical device structure using GaN substrates for laser applications 有权
标题翻译：用于激光应用的GaN衬底的光学器件结构
公开(公告)号：US09531164B2
公开(公告)日：2016-12-27
申请号：US12759273
申请日：2010-04-13
申请人： James W. Raring , Daniel F. Feezell , Nicholas J. Pfister , Rajat Sharma
发明人： James W. Raring , Daniel F. Feezell , Nicholas J. Pfister , Rajat Sharma
IPC分类号： H01S5/02 , H01S5/22 , H01L21/02 , H01S5/028 , H01S5/20 , H01S5/32 , H01S5/323
CPC分类号： H01S5/2201 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/2009 , H01S5/3202 , H01S5/32341
摘要： An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −2 degrees to about 2 degrees towards (000-1) and less than about 0.5 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. A first cleaved c-face facet is provided on one end of the laser stripe region, and a second cleaved c-face facet is provided on the other end of the laser stripe region.
摘要翻译：光学器件包括具有m面非极性晶体表面区域的氮化镓衬底构件，其特征在于朝向（000-1）约-2度至约2度且朝向（11-20）小于约0.5度。该器件还具有覆盖在m面非极性晶体取向表面区域的一部分上的激光条纹区域。在激光条区域的一端设置第一切割的c面刻面，在激光条纹区域的另一端设置第二切割的c面刻面。

3. 发明授权

US08634442B1 Optical device structure using GaN substrates for laser applications 有权
标题翻译：用于激光应用的GaN衬底的光学器件结构
公开(公告)号：US08634442B1
公开(公告)日：2014-01-21
申请号：US12868441
申请日：2010-08-25
申请人： James W. Raring , Daniel F. Feezell , Nicholas J. Pfister , Rajat Sharma , Mathew C. Schmidt , Christiane Poblenz , Yu-Chia Chang
发明人： James W. Raring , Daniel F. Feezell , Nicholas J. Pfister , Rajat Sharma , Mathew C. Schmidt , Christiane Poblenz , Yu-Chia Chang
IPC分类号： H01S5/00
CPC分类号： H01S5/2201 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/2009 , H01S5/3202 , H01S5/34333
摘要： An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.
摘要翻译：光学器件包括具有m面非极性晶体表面区域的氮化镓衬底构件，其特征在于朝向（000-1）约为-1度且朝向（11-20）小于约+/- 0.3度。该器件还具有覆盖在m面非极性晶体取向表面区域的一部分上的激光条纹区域。在优选实施例中，激光条纹区域的特征在于基本上平行于c方向的空腔取向，激光条纹区域具有第一端和第二端。该装置包括被设置在激光条区域的第一端上的第一切割的c面小面。该装置还具有暴露于激光条区域的第二端上的第二切割的c面刻面。

4. 发明授权

US08252662B1 Method and structure for manufacture of light emitting diode devices using bulk GaN 有权
标题翻译：使用体GaN制造发光二极管器件的方法和结构
公开(公告)号：US08252662B1
公开(公告)日：2012-08-28
申请号：US12749476
申请日：2010-03-29
申请人： Christiane Poblenz , Mathew C. Schmidt , Daniel F. Feezell , James W. Raring , Rajat Sharma
发明人： Christiane Poblenz , Mathew C. Schmidt , Daniel F. Feezell , James W. Raring , Rajat Sharma
IPC分类号： H01L21/30
CPC分类号： H01L33/007 , H01L33/0079 , H01L33/0095
摘要： A method for manufacturing a plurality light emitting diodes includes providing a gallium nitride containing bulk crystalline substrate material configured in a non-polar or semi-polar crystallographic orientation, forming an etch stop layer, forming an n-type layer overlying the etch stop layer, forming an active region, a p-type layer, and forming a metallization. The method includes removing a thickness of material from the backside of the bulk gallium nitride containing substrate material. A plurality of individual LED devices are formed from at least a sandwich structure comprising portions of the metallization layer, the p-type layer, active layer, and the n-type layer. The LED devices are joined to a carrier structure. The method also includes subjecting the gallium nitride containing bulk crystalline substrate material to at least one etching process to selectively remove crystalline material underlying the etch stop layer, wherein the etch stop layer is exposed, and the etch stop layer remains substantially intact.
摘要翻译：一种用于制造多个发光二极管的方法，包括提供以非极性或半极性结晶取向配置的含氮化镓的体结晶衬底材料，形成蚀刻停止层，形成覆盖在蚀刻停止层上的n型层，形成有源区，p型层，形成金属化。该方法包括从块状含氮化镓的衬底材料的背面去除材料的厚度。至少由金属化层，p型层，有源层和n型层的部分的夹层结构形成多个单独的LED器件。 LED装置连接到载体结构。该方法还包括使含氮化镓的块状结晶衬底材料进行至少一个蚀刻工艺以选择性地去除蚀刻停止层下方的结晶材料，其中蚀刻停止层被暴露，并且蚀刻停止层基本保持不变。

5. 发明申请

US20100316075A1 Optical Device Structure Using GaN Substrates for Laser Applications 有权
标题翻译：用于激光应用的GaN衬底的光器件结构
公开(公告)号：US20100316075A1
公开(公告)日：2010-12-16
申请号：US12759273
申请日：2010-04-13
申请人： James W. Raring , Daniel F. Feezell , Nicholas J. Pfister , Rajat Sharma
发明人： James W. Raring , Daniel F. Feezell , Nicholas J. Pfister , Rajat Sharma
IPC分类号： H01S5/10 , H01S5/00 , H01L21/30
CPC分类号： H01S5/2201 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/2009 , H01S5/3202 , H01S5/32341
摘要： An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −2 degrees to about 2 degrees towards (000-1) and less than about 0.5 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. A first cleaved c-face facet is provided on one end of the laser stripe region, and a second cleaved c-face facet is provided on the other end of the laser stripe region.
摘要翻译：光学器件包括具有m面非极性晶体表面区域的氮化镓衬底构件，其特征在于朝向（000-1）约-2度至约2度且朝向（11-20）小于约0.5度。该器件还具有覆盖在m面非极性晶体取向表面区域的一部分上的激光条纹区域。在激光条区域的一端设置第一切割的c面刻面，在激光条纹区域的另一端设置第二切割的c面刻面。

6. 发明申请

US20120313076A1 LOW DROOP LIGHT EMITTING DIODE STRUCTURE ON GALLIUM NITRIDE SEMIPOLAR SUBSTRATES 有权
标题翻译：氮化镓半导体基板上的低驱动发光二极管结构
公开(公告)号：US20120313076A1
公开(公告)日：2012-12-13
申请号：US13493430
申请日：2012-06-11
申请人： Shuji Nakamura , Steven P. DenBaars , Shinichi Tanaka , Daniel F. Feezell , Yuji Zhao , Chih-Chien Pan
发明人： Shuji Nakamura , Steven P. DenBaars , Shinichi Tanaka , Daniel F. Feezell , Yuji Zhao , Chih-Chien Pan
IPC分类号： H01L33/04 , H01L33/32
CPC分类号： H01L33/06 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L33/0062 , H01L33/0075 , H01L33/16 , H01L33/32
摘要： A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.
摘要翻译：通过金属有机化学气相沉积（MOCVD）在氮化镓（GaN）半极性衬底上生长的（Al，Ga，In）N薄膜的发光二极管结构，其呈现减小的下垂。该器件结构包括两个或多个周期的量子阱（QW）有源区，位于QW有源区下面的n型超晶格层（n-SL）以及QW有源区以上的p型超晶格层（p-SL）地区。本发明还包括制造这种装置的方法。

7. 发明授权

US09040327B2 Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes 有权
标题翻译： Al（x）Ga（1-x）不含氮包覆的非极性III族氮化物基激光二极管和发光二极管
公开(公告)号：US09040327B2
公开(公告)日：2015-05-26
申请号：US13495231
申请日：2012-06-13
申请人： Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/00 , H01L29/06 , H01L33/32 , B82Y20/00 , H01L33/16 , H01L33/02 , H01L33/06 , H01S5/32 , H01S5/343
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/16 , H01S5/3211 , H01S5/34333
摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
摘要翻译：一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。

8. 发明申请

US20110180781A1 Highly Polarized White Light Source By Combining Blue LED on Semipolar or Nonpolar GaN with Yellow LED on Semipolar or Nonpolar GaN 审中-公开
标题翻译：通过将半极性或非极性GaN上的蓝色LED与黄色LED结合在半极性或非极性GaN上的高度偏振的白光源
公开(公告)号：US20110180781A1
公开(公告)日：2011-07-28
申请号：US12995946
申请日：2009-06-09
申请人： James W. Raring , Daniel F. Feezell
发明人： James W. Raring , Daniel F. Feezell
IPC分类号： H01L33/06 , H01L33/08
CPC分类号： H01L33/08 , H01L27/156 , H01L33/16 , H01L33/32
摘要： A packaged light emitting device. The device has a substrate member comprising a surface region. The device also has two or more light emitting diode devices overlying the surface region. Each of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The two or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission.
摘要翻译：封装的发光器件。该装置具有包括表面区域的基底构件。该器件还具有覆盖在表面区域上的两个或更多个发光二极管器件。每个发光二极管器件制造在含有半极性或非极性GaN的衬底上。两个或更多个发光二极管器件制造在半极性或非极性的含GaN衬底上发射基本上极化的发射。

9. 发明申请

US20100006873A1 HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN 审中-公开
标题翻译：通过在半双极或非绝缘GaN上的双极半导体或非绝缘GaN上结合蓝色LED的高分辨率白光源
公开(公告)号：US20100006873A1
公开(公告)日：2010-01-14
申请号：US12481543
申请日：2009-06-09
申请人： James W. Raring , Daniel F. Feezell
发明人： James W. Raring , Daniel F. Feezell
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L33/16 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A packaged light emitting device. The device has a substrate member comprising a surface region. The device also has two or more light emitting diode devices overlying the surface region. Each of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The two or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission.
摘要翻译：封装的发光器件。该装置具有包括表面区域的基底构件。该器件还具有覆盖在表面区域上的两个或更多个发光二极管器件。每个发光二极管器件制造在含有半极性或非极性GaN的衬底上。两个或更多个发光二极管器件制造在半极性或非极性的含GaN衬底上发射基本上极化的发射。

10. 发明申请

US20090309127A1 SELECTIVE AREA EPITAXY GROWTH METHOD AND STRUCTURE 审中-公开
标题翻译：选择区外延生长方法和结构
公开(公告)号：US20090309127A1
公开(公告)日：2009-12-17
申请号：US12482440
申请日：2009-06-10
申请人： JAMES W. RARING , Daniel F. Feezell , SHUJI NAKAMURA
发明人： JAMES W. RARING , Daniel F. Feezell , SHUJI NAKAMURA
IPC分类号： H01L33/00 , H01L29/12 , C30B25/02
CPC分类号： H01L33/0079 , B82Y10/00 , C30B25/02 , C30B25/04 , C30B29/403 , H01L29/122 , H01L29/2003 , H01L33/06 , H01L33/08 , H01L33/16
摘要： A gallium containing crystalline material. The material comprises a bulk semi-polar gallium indium containing crystalline material having a thickness of about 20 nanometers to about 1000 nanometers. The material includes a spatial width dimension of no greater than about 10 microns characterizing the thickness of the bulk semi-polar gallium indium containing crystalline material. The material includes a photoluminescent characteristic of the crystalline material having a first wavelength, which is at least five nanometers greater than a second wavelength, which is derived from an indium gallium containing crystalline material grown on a growth region of greater than about 15 microns.
摘要翻译：含镓的结晶材料。该材料包括厚度为约20纳米至约1000纳米的体积半极性镓铟结晶材料。该材料包括不大于约10微米的空间宽度尺寸，其表征本体半极性镓铟结晶材料的厚度。该材料包括具有第一波长的结晶材料的光致发光特性，该第一波长比在比在大于约15微米的生长区域上生长的含铟镓结晶材料得到的第二波长大至少五纳米。

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