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1. 发明授权

US08634442B1 Optical device structure using GaN substrates for laser applications 有权
标题翻译：用于激光应用的GaN衬底的光学器件结构
公开(公告)号：US08634442B1
公开(公告)日：2014-01-21
申请号：US12868441
申请日：2010-08-25
申请人： James W. Raring , Daniel F. Feezell , Nicholas J. Pfister , Rajat Sharma , Mathew C. Schmidt , Christiane Poblenz , Yu-Chia Chang
发明人： James W. Raring , Daniel F. Feezell , Nicholas J. Pfister , Rajat Sharma , Mathew C. Schmidt , Christiane Poblenz , Yu-Chia Chang
IPC分类号： H01S5/00
CPC分类号： H01S5/2201 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/2009 , H01S5/3202 , H01S5/34333
摘要： An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.
摘要翻译：光学器件包括具有m面非极性晶体表面区域的氮化镓衬底构件，其特征在于朝向（000-1）约为-1度且朝向（11-20）小于约+/- 0.3度。该器件还具有覆盖在m面非极性晶体取向表面区域的一部分上的激光条纹区域。在优选实施例中，激光条纹区域的特征在于基本上平行于c方向的空腔取向，激光条纹区域具有第一端和第二端。该装置包括被设置在激光条区域的第一端上的第一切割的c面小面。该装置还具有暴露于激光条区域的第二端上的第二切割的c面刻面。

2. 发明授权

US08252662B1 Method and structure for manufacture of light emitting diode devices using bulk GaN 有权
标题翻译：使用体GaN制造发光二极管器件的方法和结构
公开(公告)号：US08252662B1
公开(公告)日：2012-08-28
申请号：US12749476
申请日：2010-03-29
申请人： Christiane Poblenz , Mathew C. Schmidt , Daniel F. Feezell , James W. Raring , Rajat Sharma
发明人： Christiane Poblenz , Mathew C. Schmidt , Daniel F. Feezell , James W. Raring , Rajat Sharma
IPC分类号： H01L21/30
CPC分类号： H01L33/007 , H01L33/0079 , H01L33/0095
摘要： A method for manufacturing a plurality light emitting diodes includes providing a gallium nitride containing bulk crystalline substrate material configured in a non-polar or semi-polar crystallographic orientation, forming an etch stop layer, forming an n-type layer overlying the etch stop layer, forming an active region, a p-type layer, and forming a metallization. The method includes removing a thickness of material from the backside of the bulk gallium nitride containing substrate material. A plurality of individual LED devices are formed from at least a sandwich structure comprising portions of the metallization layer, the p-type layer, active layer, and the n-type layer. The LED devices are joined to a carrier structure. The method also includes subjecting the gallium nitride containing bulk crystalline substrate material to at least one etching process to selectively remove crystalline material underlying the etch stop layer, wherein the etch stop layer is exposed, and the etch stop layer remains substantially intact.
摘要翻译：一种用于制造多个发光二极管的方法，包括提供以非极性或半极性结晶取向配置的含氮化镓的体结晶衬底材料，形成蚀刻停止层，形成覆盖在蚀刻停止层上的n型层，形成有源区，p型层，形成金属化。该方法包括从块状含氮化镓的衬底材料的背面去除材料的厚度。至少由金属化层，p型层，有源层和n型层的部分的夹层结构形成多个单独的LED器件。 LED装置连接到载体结构。该方法还包括使含氮化镓的块状结晶衬底材料进行至少一个蚀刻工艺以选择性地去除蚀刻停止层下方的结晶材料，其中蚀刻停止层被暴露，并且蚀刻停止层基本保持不变。

3. 发明授权

US09531164B2 Optical device structure using GaN substrates for laser applications 有权
标题翻译：用于激光应用的GaN衬底的光学器件结构
公开(公告)号：US09531164B2
公开(公告)日：2016-12-27
申请号：US12759273
申请日：2010-04-13
申请人： James W. Raring , Daniel F. Feezell , Nicholas J. Pfister , Rajat Sharma
发明人： James W. Raring , Daniel F. Feezell , Nicholas J. Pfister , Rajat Sharma
IPC分类号： H01S5/02 , H01S5/22 , H01L21/02 , H01S5/028 , H01S5/20 , H01S5/32 , H01S5/323
CPC分类号： H01S5/2201 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/2009 , H01S5/3202 , H01S5/32341
摘要： An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −2 degrees to about 2 degrees towards (000-1) and less than about 0.5 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. A first cleaved c-face facet is provided on one end of the laser stripe region, and a second cleaved c-face facet is provided on the other end of the laser stripe region.
摘要翻译：光学器件包括具有m面非极性晶体表面区域的氮化镓衬底构件，其特征在于朝向（000-1）约-2度至约2度且朝向（11-20）小于约0.5度。该器件还具有覆盖在m面非极性晶体取向表面区域的一部分上的激光条纹区域。在激光条区域的一端设置第一切割的c面刻面，在激光条纹区域的另一端设置第二切割的c面刻面。

4. 发明申请

US20100316075A1 Optical Device Structure Using GaN Substrates for Laser Applications 有权
标题翻译：用于激光应用的GaN衬底的光器件结构
公开(公告)号：US20100316075A1
公开(公告)日：2010-12-16
申请号：US12759273
申请日：2010-04-13
申请人： James W. Raring , Daniel F. Feezell , Nicholas J. Pfister , Rajat Sharma
发明人： James W. Raring , Daniel F. Feezell , Nicholas J. Pfister , Rajat Sharma
IPC分类号： H01S5/10 , H01S5/00 , H01L21/30
CPC分类号： H01S5/2201 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/2009 , H01S5/3202 , H01S5/32341
摘要： An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −2 degrees to about 2 degrees towards (000-1) and less than about 0.5 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. A first cleaved c-face facet is provided on one end of the laser stripe region, and a second cleaved c-face facet is provided on the other end of the laser stripe region.
摘要翻译：光学器件包括具有m面非极性晶体表面区域的氮化镓衬底构件，其特征在于朝向（000-1）约-2度至约2度且朝向（11-20）小于约0.5度。该器件还具有覆盖在m面非极性晶体取向表面区域的一部分上的激光条纹区域。在激光条区域的一端设置第一切割的c面刻面，在激光条纹区域的另一端设置第二切割的c面刻面。

5. 发明申请

US20110180781A1 Highly Polarized White Light Source By Combining Blue LED on Semipolar or Nonpolar GaN with Yellow LED on Semipolar or Nonpolar GaN 审中-公开
标题翻译：通过将半极性或非极性GaN上的蓝色LED与黄色LED结合在半极性或非极性GaN上的高度偏振的白光源
公开(公告)号：US20110180781A1
公开(公告)日：2011-07-28
申请号：US12995946
申请日：2009-06-09
申请人： James W. Raring , Daniel F. Feezell
发明人： James W. Raring , Daniel F. Feezell
IPC分类号： H01L33/06 , H01L33/08
CPC分类号： H01L33/08 , H01L27/156 , H01L33/16 , H01L33/32
摘要： A packaged light emitting device. The device has a substrate member comprising a surface region. The device also has two or more light emitting diode devices overlying the surface region. Each of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The two or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission.
摘要翻译：封装的发光器件。该装置具有包括表面区域的基底构件。该器件还具有覆盖在表面区域上的两个或更多个发光二极管器件。每个发光二极管器件制造在含有半极性或非极性GaN的衬底上。两个或更多个发光二极管器件制造在半极性或非极性的含GaN衬底上发射基本上极化的发射。

6. 发明申请

US20100006873A1 HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN 审中-公开
标题翻译：通过在半双极或非绝缘GaN上的双极半导体或非绝缘GaN上结合蓝色LED的高分辨率白光源
公开(公告)号：US20100006873A1
公开(公告)日：2010-01-14
申请号：US12481543
申请日：2009-06-09
申请人： James W. Raring , Daniel F. Feezell
发明人： James W. Raring , Daniel F. Feezell
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L33/16 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A packaged light emitting device. The device has a substrate member comprising a surface region. The device also has two or more light emitting diode devices overlying the surface region. Each of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The two or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission.
摘要翻译：封装的发光器件。该装置具有包括表面区域的基底构件。该器件还具有覆盖在表面区域上的两个或更多个发光二极管器件。每个发光二极管器件制造在含有半极性或非极性GaN的衬底上。两个或更多个发光二极管器件制造在半极性或非极性的含GaN衬底上发射基本上极化的发射。

7. 发明申请

US20090309127A1 SELECTIVE AREA EPITAXY GROWTH METHOD AND STRUCTURE 审中-公开
标题翻译：选择区外延生长方法和结构
公开(公告)号：US20090309127A1
公开(公告)日：2009-12-17
申请号：US12482440
申请日：2009-06-10
申请人： JAMES W. RARING , Daniel F. Feezell , SHUJI NAKAMURA
发明人： JAMES W. RARING , Daniel F. Feezell , SHUJI NAKAMURA
IPC分类号： H01L33/00 , H01L29/12 , C30B25/02
CPC分类号： H01L33/0079 , B82Y10/00 , C30B25/02 , C30B25/04 , C30B29/403 , H01L29/122 , H01L29/2003 , H01L33/06 , H01L33/08 , H01L33/16
摘要： A gallium containing crystalline material. The material comprises a bulk semi-polar gallium indium containing crystalline material having a thickness of about 20 nanometers to about 1000 nanometers. The material includes a spatial width dimension of no greater than about 10 microns characterizing the thickness of the bulk semi-polar gallium indium containing crystalline material. The material includes a photoluminescent characteristic of the crystalline material having a first wavelength, which is at least five nanometers greater than a second wavelength, which is derived from an indium gallium containing crystalline material grown on a growth region of greater than about 15 microns.
摘要翻译：含镓的结晶材料。该材料包括厚度为约20纳米至约1000纳米的体积半极性镓铟结晶材料。该材料包括不大于约10微米的空间宽度尺寸，其表征本体半极性镓铟结晶材料的厚度。该材料包括具有第一波长的结晶材料的光致发光特性，该第一波长比在比在大于约15微米的生长区域上生长的含铟镓结晶材料得到的第二波长大至少五纳米。

8. 发明授权

US08767787B1 Integrated laser diodes with quality facets on GaN substrates 有权
标题翻译：集成激光二极管，具有GaN衬底上的质量面
公开(公告)号：US08767787B1
公开(公告)日：2014-07-01
申请号：US13546943
申请日：2012-07-11
申请人： James W. Raring , Daniel F. Feezell
发明人： James W. Raring , Daniel F. Feezell
IPC分类号： H01S5/00
CPC分类号： H01S5/101 , B82Y20/00 , H01S5/0202 , H01S5/0206 , H01S5/22 , H01S5/3202 , H01S5/34333 , H01S5/4031 , H01S2301/14 , H01S2301/176 , H01S2304/04
摘要： A laser diode device operable at a one or more wavelength ranges. The device has a first waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the first waveguide has a first gain characteristic and a first direction. In a specific embodiment, the first waveguide has a first end and a second end and a first length defined between the first end and the second end. The device has a second waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the second waveguide has a second gain characteristic and a second direction. In a specific embodiment, the second waveguide has a first end, a second end, and a second length defined between the first end and the second end.
摘要翻译：一种可在一个或多个波长范围下工作的激光二极管装置。该器件具有设置在含镓材料的非极性或半极性晶面上的第一波导。在具体实施例中，第一波导具有第一增益特性和第一方向。在具体实施例中，第一波导具有限定在第一端和第二端之间的第一端和第二端以及第一长度。该器件具有设置在含镓材料的非极性或半极性晶面上的第二波导。在具体实施例中，第二波导具有第二增益特性和第二方向。在具体实施例中，第二波导具有限定在第一端和第二端之间的第一端，第二端和第二长度。

9. 发明授权

US08728842B2 Self-aligned multi-dielectric-layer lift off process for laser diode stripes 有权
标题翻译：用于激光二极管条纹的自对准多介质层剥离工艺
公开(公告)号：US08728842B2
公开(公告)日：2014-05-20
申请号：US13425354
申请日：2012-03-20
申请人： James W. Raring , Daniel F. Feezell , Nick Pfister
发明人： James W. Raring , Daniel F. Feezell , Nick Pfister
IPC分类号： H01L33/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2086 , H01S2301/176 , H01S2304/04 , Y10S438/951 , Y10S438/981
摘要： A method for forming a laser diode structure. The method includes providing a laser diode material having a surface region. A multilayer dielectric mask structure comprising alternating first and second dielectric layers is formed overlying the surface region. The method forms a laser diode structure using the multilayer dielectric mask structure as a mask. The method selectively removes a portion of the first dielectric layer to form one or more undercut regions between the second dielectric layers. A passivation layer overlies the multilayer dielectric mask structure and the undercut region remained intact. The dielectric mask structure is selectively removed, exposing a top surface region of the laser diode structure. A contact structure is formed overlying at least the exposed top surface region.
摘要翻译：一种形成激光二极管结构的方法。该方法包括提供具有表面区域的激光二极管材料。包括交替的第一和第二电介质层的多层电介质掩模结构形成在覆盖表面区域上。该方法使用多层介电掩模结构作为掩模形成激光二极管结构。该方法选择性地去除第一电介质层的一部分以在第二电介质层之间形成一个或多个底切区域。钝化层覆盖多层电介质掩模结构，并且底切区保持完整。选择性地去除电介质掩模结构，暴露激光二极管结构的顶表面区域。形成至少覆盖暴露的顶表面区域的接触结构。

10. 发明申请

US20120178198A1 Self-Aligned Multi-Dielectric-Layer Lift Off Process for Laser Diode Stripes 有权
标题翻译：用于激光二极管条纹的自对准多电介质层剥离工艺
公开(公告)号：US20120178198A1
公开(公告)日：2012-07-12
申请号：US13425354
申请日：2012-03-20
申请人： James W. Raring , Daniel F. Feezell , Nick Pfister
发明人： James W. Raring , Daniel F. Feezell , Nick Pfister
IPC分类号： H01L33/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2086 , H01S2301/176 , H01S2304/04 , Y10S438/951 , Y10S438/981
摘要： A method for forming a laser diode structure. The method includes providing a laser diode material having a surface region. A multilayer dielectric mask structure comprising alternating first and second dielectric layers is formed overlying the surface region. The method forms a laser diode structure using the multilayer dielectric mask structure as a mask. The method selectively removes a portion of the first dielectric layer to form one or more undercut regions between the second dielectric layers. A passivation layer overlies the multilayer dielectric mask structure and the undercut region remained intact. The dielectric mask structure is selectively removed, exposing a top surface region of the laser diode structure. A contact structure is formed overlying at least the exposed top surface region.
摘要翻译：一种形成激光二极管结构的方法。该方法包括提供具有表面区域的激光二极管材料。包括交替的第一和第二电介质层的多层电介质掩模结构形成在覆盖表面区域上。该方法使用多层介电掩模结构作为掩模形成激光二极管结构。该方法选择性地去除第一电介质层的一部分以在第二电介质层之间形成一个或多个底切区域。钝化层覆盖多层电介质掩模结构，并且底切区保持完整。选择性地去除电介质掩模结构，暴露激光二极管结构的顶表面区域。形成至少覆盖暴露的顶表面区域的接触结构。

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