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    • 3. 发明申请
    • Integrated RF Front End with Stacked Transistor Switch
    • 集成RF前端与堆叠晶体管开关
    • US20120007679A1
    • 2012-01-12
    • US12903848
    • 2010-10-13
    • Mark L. BurgenerJames S. Cable
    • Mark L. BurgenerJames S. Cable
    • H03F3/21
    • H04B1/48H01L27/0248H01Q23/00H03F1/0205H03F1/56H03F1/565H03F3/19H03F3/21H03F2200/387H03F2200/451H03G3/3042H03G11/00H04B1/0053H04B1/0475H04L27/04
    • A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Stacks of multiple FETs in series to operate as a switching device may be used for implementation of the RF front end, and the method and apparatus of such stacks are claimed as subcombinations. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. A preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits, and a four-way antenna switch to selectably couple a single antenna connection to any one of the four circuits.
    • 一种单片集成电路(IC)及其制造方法,其包括用于便携式通信设备的所有RF前端或收发器元件,包括功率放大器(PA),匹配,耦合和滤波网络以及天线开关 将调节的PA信号耦合到天线。 输出信号传感器至少感测由天线开关切换的信号的电压幅度,并且响应于感测输出的过大值,向PA控制电路发信号以限制PA输出功率。 用作串联用作开关装置的多个FET的堆叠可以用于RF前端的实现,并且这种堆叠的方法和装置被称为子组合。 描述了一种消耗性地终止PA输出信号的不需要的谐波的iClass PA架构。 RF收发器IC的优选实施例包括两个不同的PA电路,两个不同的接收信号放大器电路和四路天线开关,以将单个天线连接可选择地耦合到四个电路中的任一个。
    • 5. 发明授权
    • Integrated RF front end
    • 集成RF前端
    • US07088971B2
    • 2006-08-08
    • US11158597
    • 2005-06-22
    • Mark L. BurgenerJames S. Cable
    • Mark L. BurgenerJames S. Cable
    • H04B1/04
    • H03F3/189H01Q23/00H03F1/223H03F1/565H03F3/2171H03F3/68H03F2200/294H03F2200/372H03F2200/61H03G3/3042H03G11/00H04B1/0475H04B1/48
    • A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Preferred fabrication techniques include stacking multiple FETs to form switching devices. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. A preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits, and a four-way antenna switch to selectably couple a single antenna connection to any one of the four circuits.
    • 一种单片集成电路(IC)及其制造方法,其包括用于便携式通信设备的所有RF前端或收发器元件,包括功率放大器(PA),匹配,耦合和滤波网络以及天线开关 将调节的PA信号耦合到天线。 输出信号传感器至少感测由天线开关切换的信号的电压幅度,并且响应于感测输出的过大值,向PA控制电路发信号以限制PA输出功率。 优选的制造技术包括堆叠多个FET以形成开关器件。 描述了一种消耗性地终止PA输出信号的不需要的谐波的iClass PA架构。 RF收发器IC的优选实施例包括两个不同的PA电路,两个不同的接收信号放大器电路和四路天线开关,以将单个天线连接可选择地耦合到四个电路中的任一个。
    • 7. 发明授权
    • Switch circuit and method of switching radio frequency signals
    • 开关电路及射频信号切换方法
    • US07860499B2
    • 2010-12-28
    • US12315395
    • 2008-12-01
    • Mark L. BurgenerJames S. Cable
    • Mark L. BurgenerJames S. Cable
    • H04B1/28H01L29/76H04M1/00
    • H03K17/6871H01P1/15H03K17/063H03K17/102H03K17/693H03K19/018521H03K19/0944H03K2017/0803H04B1/40
    • An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.
    • 一种用于切换RF信号的RF开关电路和方法,其可以使用诸如硅的公共集成电路材料制造,特别是使用绝缘衬底技术。 RF开关包括切换和分流晶体管组,以将RF输入信号交替地耦合到公共RF节点,每个RF节点由开关控制电压(SW)或其逆(SW)控制,其大约对称地对称。 晶体管组各自包括以“堆叠”串联通道配置连接在一起的一个或多个绝缘栅FET晶体管,这增加了串联连接的晶体管两端的击穿电压并改善了RF开关压缩。 描述了完全集成的RF开关,其包括具有RF开关元件的控制逻辑和负电压发生器。 在一个实施例中,完全集成的RF开关包括振荡器,电荷泵,CMOS逻辑电路,电平移位和分压电路以及RF缓冲电路。
    • 8. 发明授权
    • Switch circuit and method of switching radio frequency signals
    • 开关电路及射频信号切换方法
    • US07123898B2
    • 2006-10-17
    • US10922135
    • 2004-08-18
    • Mark L. BurgenerJames S. Cable
    • Mark L. BurgenerJames S. Cable
    • H04B1/28H01L29/76H04Q7/20H04M1/00
    • H03K17/6871H01P1/15H03K17/063H03K17/102H03K17/693H03K19/018521H03K19/0944H03K2017/0803H04B1/40
    • A novel RF buffer circuit adapted for use with an RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW_). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level shifting, voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.
    • 描述了适用于RF开关电路的新型RF缓冲电路和用于切换RF信号的方法。 RF开关电路采用绝缘体上硅(SOI)技术制造。 RF开关包括用于交替地将RF输入信号耦合到公共RF节点的成对的开关和分流晶体管组。 开关和分流晶体管分组对由开关控制电压(SW)及其反相(SW_)控制。 开关和分流晶体管组包括以“堆叠”或串联配置连接在一起的一个或多个MOSFET晶体管。 晶体管分组器件和相关的栅极电阻器的堆叠增加了串联连接的开关晶体管上的击穿电压,并且操作以改善RF开关压缩。 描述了完全集成的RF开关,其包括与RF开关元件集成在一起的数字控制逻辑和负电压发生器。 在一个实施例中,完全集成的RF开关包括内置振荡器,电荷泵电路,CMOS逻辑电路,电平转换和分压器电路以及RF缓冲电路。 描述了电荷泵,电平转换,分压器和RF缓冲电路的几个实施例。 本发明的RF开关提供插入损耗,开关隔离和开关压缩方面的改进。
    • 9. 发明授权
    • Integrated RF front end with stacked transistor switch
    • 集成RF前端,堆叠晶体管开关
    • US08649754B2
    • 2014-02-11
    • US12903848
    • 2010-10-13
    • Mark L. BurgenerJames S. Cable
    • Mark L. BurgenerJames S. Cable
    • H04B1/28
    • H04B1/48H01L27/0248H01Q23/00H03F1/0205H03F1/56H03F1/565H03F3/19H03F3/21H03F2200/387H03F2200/451H03G3/3042H03G11/00H04B1/0053H04B1/0475H04L27/04
    • A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Stacks of multiple FETs in series to operate as a switching device may be used for implementation of the RF front end, and the method and apparatus of such stacks are claimed as subcombinations. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. A preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits, and a four-way antenna switch to selectably couple a single antenna connection to any one of the four circuits.
    • 一种单片集成电路(IC)及其制造方法,其包括用于便携式通信设备的所有RF前端或收发器元件,包括功率放大器(PA),匹配,耦合和滤波网络以及天线开关 将调节的PA信号耦合到天线。 输出信号传感器至少感测由天线开关切换的信号的电压幅度,并且响应于感测输出的过大值,向PA控制电路发信号以限制PA输出功率。 用作串联用作开关装置的多个FET的堆叠可以用于RF前端的实现,并且这种堆叠的方法和装置被称为子组合。 描述了一种消耗性地终止PA输出信号的不需要的谐波的iClass PA架构。 RF收发器IC的优选实施例包括两个不同的PA电路,两个不同的接收信号放大器电路和四路天线开关,以将单个天线连接可选择地耦合到四个电路中的任一个。