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    • 5. 发明申请
    • Wireless softphone headset system with incoming call alert and headset hookswitch control
    • 无线软电话耳机系统带有来电提示和耳机钩开关控制
    • US20070004473A1
    • 2007-01-04
    • US11173362
    • 2005-07-01
    • Mark ClarkWill MorrellSteve EvansIlia Langouev
    • Mark ClarkWill MorrellSteve EvansIlia Langouev
    • H04M1/00
    • H04M1/6066H04M1/2535
    • Systems and methods for wireless audio headsets for use with communication applications such as softphone applications running on processor-based hosts for alerting a user of incoming calls and providing hookswitch control from the wireless headset are disclosed. The system generally includes a headset base for communication with a processor-based host executing a communication-headset application for interfacing between a network and the wireless headset system, and a wireless headset in wireless communication with the headset base. The wireless headset system may be configured to cooperate with the communication-headset application to answer an incoming call in response to a call answering activity and, upon the incoming call being answered, to transmit audio signals between the network and the wireless headset via the communication-headset application and the headset base.
    • 公开了用于无线音频耳机的系统和方法,用于诸如在基于处理器的主机上运行的软电话应用的通信应用,用于向用户通知来话呼叫和从无线耳机提供钩开关控制。 该系统通常包括耳机基座,用于与执行用于在网络和无线耳机系统之间进行接口的通信耳机应用的基于处理器的主机以及与耳机基座无线通信的无线耳机进行通信。 无线耳机系统可以被配置为与通信耳机应用协作以响应于呼叫应答活动来应答来电,并且在来电被应答时,经由通信在网络和无线耳机之间传送音频信号 头戴应用程序和耳机基座。
    • 9. 发明授权
    • Damascene process for carbon memory element with MIIM diode
    • 具有MIIM二极管的碳记忆元件的镶嵌工艺
    • US07935594B2
    • 2011-05-03
    • US12566486
    • 2009-09-24
    • April Dawn SchrickerDeepak C. SekarAndy FuMark Clark
    • April Dawn SchrickerDeepak C. SekarAndy FuMark Clark
    • H01L21/8234
    • H01L45/1233H01L27/101H01L27/1021H01L27/2418H01L27/2481H01L45/04H01L45/06H01L45/122H01L45/144H01L45/149H01L45/1683
    • Forming a metal-insulator diode and carbon memory element in a single damascene process is disclosed. A trench having a bottom and a sidewall is formed in an insulator. A first diode electrode is formed in the trench during a single damascene process. A first insulating region comprising a first insulating material is formed in the trench during the single damascene process. A second insulating region comprising a second insulating material is formed in the trench during the single damascene process. A second diode electrode is formed in the trench during the single damascene process. The first insulating region and the second insulating region reside between the first diode electrode and the second diode electrode to form a metal-insulator-insulator-metal (MIIM) diode. A region of carbon is formed in the trench during the single damascene process. At least a portion of the carbon is electrically in series with the MIIM diode.
    • 公开了在单个镶嵌工艺中形成金属绝缘体二极管和碳记忆元件。 具有底部和侧壁的沟槽形成在绝缘体中。 在单个镶嵌工艺期间,在沟槽中形成第一二极管电极。 在单个镶嵌工艺期间,在沟槽中形成包括第一绝缘材料的第一绝缘区域。 在单个镶嵌工艺期间,在沟槽中形成包括第二绝缘材料的第二绝缘区域。 在单镶嵌工艺期间,在沟槽中形成第二二极管电极。 第一绝缘区域和第二绝缘区域位于第一二极管电极和第二二极管电极之间,以形成金属 - 绝缘体 - 绝缘体 - 金属(MIIM)二极管。 在单个镶嵌工艺期间,在沟槽中形成碳区域。 至少一部分碳与MIIM二极管电串联。