专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07935594B2 Damascene process for carbon memory element with MIIM diode 有权
标题翻译：具有MIIM二极管的碳记忆元件的镶嵌工艺
公开(公告)号：US07935594B2
公开(公告)日：2011-05-03
申请号：US12566486
申请日：2009-09-24
申请人： April Dawn Schricker , Deepak C. Sekar , Andy Fu , Mark Clark
发明人： April Dawn Schricker , Deepak C. Sekar , Andy Fu , Mark Clark
IPC分类号： H01L21/8234
CPC分类号： H01L45/1233 , H01L27/101 , H01L27/1021 , H01L27/2418 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/122 , H01L45/144 , H01L45/149 , H01L45/1683
摘要： Forming a metal-insulator diode and carbon memory element in a single damascene process is disclosed. A trench having a bottom and a sidewall is formed in an insulator. A first diode electrode is formed in the trench during a single damascene process. A first insulating region comprising a first insulating material is formed in the trench during the single damascene process. A second insulating region comprising a second insulating material is formed in the trench during the single damascene process. A second diode electrode is formed in the trench during the single damascene process. The first insulating region and the second insulating region reside between the first diode electrode and the second diode electrode to form a metal-insulator-insulator-metal (MIIM) diode. A region of carbon is formed in the trench during the single damascene process. At least a portion of the carbon is electrically in series with the MIIM diode.
摘要翻译：公开了在单个镶嵌工艺中形成金属绝缘体二极管和碳记忆元件。具有底部和侧壁的沟槽形成在绝缘体中。在单个镶嵌工艺期间，在沟槽中形成第一二极管电极。在单个镶嵌工艺期间，在沟槽中形成包括第一绝缘材料的第一绝缘区域。在单个镶嵌工艺期间，在沟槽中形成包括第二绝缘材料的第二绝缘区域。在单镶嵌工艺期间，在沟槽中形成第二二极管电极。第一绝缘区域和第二绝缘区域位于第一二极管电极和第二二极管电极之间，以形成金属 - 绝缘体 - 绝缘体 - 金属（MIIM）二极管。在单个镶嵌工艺期间，在沟槽中形成碳区域。至少一部分碳与MIIM二极管电串联。

2. 发明申请

US20100081268A1 DAMASCENE PROCESS FOR CARBON MEMORY ELEMENT WITH MIIM DIODE 有权
标题翻译：具有MIIM二极管的碳记忆元件的弥散过程
公开(公告)号：US20100081268A1
公开(公告)日：2010-04-01
申请号：US12566486
申请日：2009-09-24
申请人： April Dawn Schricker , Deepak C. Sekar , Andy Fu , Mark Clark
发明人： April Dawn Schricker , Deepak C. Sekar , Andy Fu , Mark Clark
IPC分类号： H01L21/44
CPC分类号： H01L45/1233 , H01L27/101 , H01L27/1021 , H01L27/2418 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/122 , H01L45/144 , H01L45/149 , H01L45/1683
摘要： Forming a metal-insulator diode and carbon memory element in a single damascene process is disclosed. A trench having a bottom and a sidewall is formed in an insulator. A first diode electrode is formed in the trench during a single damascene process. A first insulating region comprising a first insulating material is formed in the trench during the single damascene process. A second insulating region comprising a second insulating material is formed in the trench during the single damascene process. A second diode electrode is formed in the trench during the single damascene process. The first insulating region and the second insulating region reside between the first diode electrode and the second diode electrode to form a metal-insulator-insulator-metal (MIIM) diode. A region of carbon is formed in the trench during the single damascene process. At least a portion of the carbon is electrically in series with the MIIM diode.
摘要翻译：公开了在单个镶嵌工艺中形成金属绝缘体二极管和碳记忆元件。具有底部和侧壁的沟槽形成在绝缘体中。在单个镶嵌工艺期间，在沟槽中形成第一二极管电极。在单个镶嵌工艺期间，在沟槽中形成包括第一绝缘材料的第一绝缘区域。在单个镶嵌工艺期间，在沟槽中形成包括第二绝缘材料的第二绝缘区域。在单镶嵌工艺期间，在沟槽中形成第二二极管电极。第一绝缘区域和第二绝缘区域位于第一二极管电极和第二二极管电极之间，以形成金属 - 绝缘体 - 绝缘体 - 金属（MIIM）二极管。在单个镶嵌工艺期间，在沟槽中形成碳区域。至少一部分碳与MIIM二极管电串联。

3. 发明授权

US07097788B2 Conducting inks 失效
标题翻译：导电油墨
公开(公告)号：US07097788B2
公开(公告)日：2006-08-29
申请号：US10610363
申请日：2003-06-30
申请人： Ewa Stanislawa Kirkor , April Dawn Schricker , Alexander Scheeline
发明人： Ewa Stanislawa Kirkor , April Dawn Schricker , Alexander Scheeline
IPC分类号： H01B1/24
CPC分类号： B82Y30/00 , B82Y10/00 , C09D11/30 , C09D11/52 , C12Q1/004 , H05K1/095 , H05K3/12 , H05K2201/0281 , H05K2201/0323 , H05K2201/0329 , H05K2203/0271 , H05K2203/105
摘要： A method of increasing conductivity of an ink, comprises orienting particles in the ink. The ink comprises the particles and solvent, and the particles are conductive anisotropic particles.
摘要翻译：提高墨水导电性的方法包括使墨中的颗粒定向。油墨包括颗粒和溶剂，并且颗粒是导电各向异性颗粒。

4. 发明授权

US08623509B2 Thermometric carbon composites 失效
标题翻译：温度碳复合材料
公开(公告)号：US08623509B2
公开(公告)日：2014-01-07
申请号：US11744846
申请日：2007-05-05
申请人： Ewa Stanislawa Kirkor , April Dawn Schricker
发明人： Ewa Stanislawa Kirkor , April Dawn Schricker
IPC分类号： B32B9/00
CPC分类号： C09D5/24 , C09D101/02 , H01B1/24 , Y10T428/30
摘要： A composition of electrically conductive composites for temperature sensing comprises conductive particles. The composite forms from a suspension. The suspension comprises the particles and solvent, and the particles are conductive particles with aspect ratio larger than one. The conductive composite retains a negative temperature coefficient when in contact with certain specific surfaces. The particles within the composite self align.
摘要翻译：用于温度感测的导电复合材料的组合包括导电颗粒。复合物从悬浮液中形成。悬浮液包含颗粒和溶剂，颗粒是长径比大于1的导电颗粒。当与某些特定表面接触时，导电复合材料保持负温度系数。复合材料内的颗粒自对准。

5. 发明申请

US20140345843A1 DYNAMIC THERMAL INTERFACE MATERIAL 审中-公开
标题翻译：动态热界面材料
公开(公告)号：US20140345843A1
公开(公告)日：2014-11-27
申请号：US14236681
申请日：2012-08-03
申请人： Ewa S. Kirkor , April Dawn Schricker , Saion K. Sinha , Alexander Scheeline
发明人： Ewa S. Kirkor , April Dawn Schricker , Saion K. Sinha , Alexander Scheeline
IPC分类号： F28F21/02 , C09K5/14 , H05K7/20
CPC分类号： F28F21/02 , C09K5/14 , F28F23/00 , H01L23/373 , H01L23/433 , H01L2924/0002 , H05K7/2039 , H01L2924/00
摘要： Aspects of the invention provide compositions that include carbon nanotubes dispersed within nanographite particles, and that have useful thermal properties. Certain compositions have high thermal conductivities (e.g., high thermal conductivities at ambient temperature). Certain compositions have a temperature dependent thermal conductivity that reversibly increases with temperature. Certain compositions are useful for heat transfer and can be used as thermal interface material, for example, in the context of computer and/or power generating devices.
摘要翻译：本发明的方面提供了包含分散在纳米尺寸颗粒内并且具有有用的热性质的碳纳米管的组合物。某些组合物具有高导热性（例如在环境温度下的高热导率）。某些组合物具有随温度可逆地升高的温度依赖性热导率。某些组合物可用于热传递，并且可以用作热界面材料，例如在计算机和/或发电装置的上下文中。

6. 发明授权

US07615439B1 Damascene process for carbon memory element with MIIM diode 有权
标题翻译：具有MIIM二极管的碳记忆元件的镶嵌工艺
公开(公告)号：US07615439B1
公开(公告)日：2009-11-10
申请号：US12240758
申请日：2008-09-29
申请人： April Dawn Schricker , Deepak C. Sekar , Andy Fu , Mark Clark
发明人： April Dawn Schricker , Deepak C. Sekar , Andy Fu , Mark Clark
IPC分类号： H01L21/8234
CPC分类号： H01L45/1233 , H01L27/101 , H01L27/1021 , H01L27/2418 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/122 , H01L45/144 , H01L45/149 , H01L45/1683
摘要： Forming a metal-insulator diode and carbon memory element in a single damascene process is disclosed. A trench having a bottom and a sidewall is formed in an insulator. A first diode electrode is formed in the trench during a single damascene process. A first insulating region comprising a first insulating material is formed in the trench during the single damascene process. A second insulating region comprising a second insulating material is formed in the trench during the single damascene process. A second diode electrode is formed in the trench during the single damascene process. The first insulating region and the second insulating region reside between the first diode electrode and the second diode electrode to form a metal-insulator-insulator-metal (MIIM) diode. A region of carbon is formed in the trench during the single damascene process. At least a portion of the carbon is electrically in series with the MIIM diode.
摘要翻译：公开了在单个镶嵌工艺中形成金属绝缘体二极管和碳记忆元件。具有底部和侧壁的沟槽形成在绝缘体中。在单个镶嵌工艺期间，在沟槽中形成第一二极管电极。在单个镶嵌工艺期间，在沟槽中形成包括第一绝缘材料的第一绝缘区域。在单个镶嵌工艺期间，在沟槽中形成包括第二绝缘材料的第二绝缘区域。在单镶嵌工艺期间，在沟槽中形成第二二极管电极。第一绝缘区域和第二绝缘区域位于第一二极管电极和第二二极管电极之间，以形成金属 - 绝缘体 - 绝缘体 - 金属（MIIM）二极管。在单个镶嵌工艺期间，在沟槽中形成碳区域。至少一部分碳与MIIM二极管电串联。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式