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    • 1. 发明授权
    • Charging of a hole-free thin film phase plate
    • 充电无孔薄膜相位板
    • US08785850B2
    • 2014-07-22
    • US12930749
    • 2011-01-15
    • Marek MalacMarco BeleggiaMasahiro KawasakiRay Egerton
    • Marek MalacMarco BeleggiaMasahiro KawasakiRay Egerton
    • H01J37/295B82Y35/00
    • H01J37/26H01J37/04H01J2237/2614
    • New methods for phase contrast imaging in transmission electron microscopy use the imaging electron beam itself to prepare a hole-free thin film for use as an effective phase plate, in some cases eliminating the need for ex-situ fabrication of a hole and reducing requirements for the precision of the ZPP hardware. The electron optical properties of the ZPP hardware are modified primarily in two ways: by boring a hole using the electron beam; and/or by modifying the electro-optical properties by charging induced by the primary beam. Furthermore a method where the sample is focused by a lens downstream from the ZPP hardware is disclosed. A method for transferring a back focal plane of the objective lens to a selected area aperture plane and any plane conjugated with the back focal plane of the objective lens is also provided.
    • 透射电子显微镜中相位成像的新方法使用成像电子束本身来制备无孔薄膜,用作有效的相位板,在某些情况下消除了对孔的非原位制造的需要,并减少了对 ZPP硬件的精度。 ZPP硬件的电子光学特性主要通过两种方式进行修改:通过使用电子束钻孔; 和/或通过由主光束引起的充电来改变电光特性。 此外,公开了一种通过ZPP硬件下游的透镜来聚焦样品的方法。 还提供了将物镜的后焦平面转移到选定的区域孔径平面和与物镜的后焦平面共轭的任何平面的方法。
    • 2. 发明申请
    • Phase contrast imaging and preparing a tem therefor
    • 相位对比成像和准备
    • US20110174971A1
    • 2011-07-21
    • US12930749
    • 2011-01-15
    • Marek MalacMarco BeleggiaMasahiro KawasakiRay Egerton
    • Marek MalacMarco BeleggiaMasahiro KawasakiRay Egerton
    • H01J37/26
    • H01J37/26H01J37/04H01J2237/2614
    • New methods for phase contrast imaging in transmission electron microscopy use the imaging electron beam itself to prepare a hole-free thin film for use as an effective phase plate, in some cases eliminating the need for ex-situ fabrication of a hole and reducing requirements for the precision of the ZPP hardware. The electron optical properties of the ZPP hardware are modified primarily in two ways: by boring a hole using the electron beam; and/or by modifying the electro-optical properties by charging induced by the primary beam. Furthermore a method where the sample is focused by a lens downstream from the ZPP hardware is disclosed. A method for transferring a back focal plane of the objective lens to a selected area aperture plane and any plane conjugated with the back focal plane of the objective lens is also provided.
    • 透射电子显微镜中相位成像的新方法使用成像电子束本身制备无孔薄膜,用作有效的相位板,在某些情况下消除了对孔的非原位制造的需要,并减少了对 ZPP硬件的精度。 ZPP硬件的电子光学特性主要通过两种方式进行修改:通过使用电子束钻孔; 和/或通过由主光束引起的充电来改变电光特性。 此外,公开了一种通过ZPP硬件下游的透镜来聚焦样品的方法。 还提供了将物镜的后焦平面转移到选定的区域孔径平面和与物镜的后焦平面共轭的任何平面的方法。
    • 8. 发明授权
    • Semiconductor device and manufacturing method thereof
    • 半导体装置及其制造方法
    • US07081641B2
    • 2006-07-25
    • US10786097
    • 2004-02-26
    • Masahiro KawasakiShuji ImazekiMasahiko Ando
    • Masahiro KawasakiShuji ImazekiMasahiko Ando
    • H01L29/08
    • H01L51/0545H01L51/0021H01L51/0037H01L51/0052H01L51/0516
    • An object of the present invention is to provide a semiconductor device such as a display device, ID tag, sensor or the like at low cost by using a bottom contact type organic TFT as a switching element. In the present invention, the semiconductor layer of the bottom contact type organic TFT is formed of a polycrystalline material, and the taper width of each of the source and drain electrodes of the TFT in the direction of the channel length is smaller than the average particle size of semiconductor crystals grown on the source and drain electrodes. Alternatively, the side on the channel side of each of the source and drain electrodes of the bottom contact type organic TFT is formed so as to be convex upward with respect to the substrate surface. Alternatively, an organic compound layer different from the semiconductor layer of the bottom contact type organic TFT is made present between each of the source and drain electrodes of the bottom contact type organic TFT and said semiconductor layer, in a thickness of not more than 10 Å and not less than 1 Å.
    • 本发明的目的是通过使用底接触型有机TFT作为开关元件,以低成本提供诸如显示装置,ID标签,传感器等的半导体器件。 在本发明中,底部接触型有机TFT的半导体层由多晶材料形成,TFT的源极和漏极的沟道长度方向的锥形宽度小于平均粒子 在源极和漏极上生长的半导体晶体的尺寸。 或者,底接触型有机TFT的源电极和漏电极的沟道侧的一侧形成为相对于衬底表面向上凸起。 或者,在底接触型有机TFT和所述半导体层的每个源电极和漏电极之间存在不同于底接触型有机TFT的半导体层的有机化合物层,其厚度不大于 并且不小于1。