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    • 1. 发明申请
    • Method for producing a nanostructure based on interconnected nanowires, nanostructure and use as thermoelectric converter
    • 基于互连的纳米线,纳米结构和用作热电转换器的纳米结构的制造方法
    • US20080142066A1
    • 2008-06-19
    • US11826293
    • 2007-07-13
    • Marc PlissonnierFrederic GaillardRaphael SalotJean-Antoine Gruss
    • Marc PlissonnierFrederic GaillardRaphael SalotJean-Antoine Gruss
    • H01L21/44H01L35/00
    • H01L35/34H01L35/32Y10S977/89Y10T428/2971
    • Method for producing a nanostructure based on interconnected nanowires, nanostructure and use as thermoelectric converter The nanostructure comprises two arrays of nanowires made from respectively n-doped and p-doped semi-conducting material. The nanowires of the first array, for example of n type, are formed for example by VLS growth. A droplet of electrically conducting material that acted as catalyst during the growth step remains on the tip of each nanowire of the first array at the end of growth. A nanowire of the second array is then formed around each nanowire of the first array by covering a layer of electrically insulating material formed around each nanowire of the first array, and the associated droplet, with a layer of p-type semi-conducting material. A droplet thus automatically connects a nanowire of the first array with a single coaxial nanowire of the second array. This type of nanostructure can be used in particular to form a thermoelectric converter.
    • 用于制备基于互连纳米线,纳米结构并用作热电转换器的纳米结构的方法纳米结构包括由分别掺杂n型掺杂和p掺杂半导体材料制成的两个纳米线阵列。 第一阵列的纳米线,例如n型,例如通过VLS生长形成。 在生长步骤中用作催化剂的导电材料液滴在生长结束时保留在第一阵列的每个纳米线的尖端上。 然后通过用一层p型半导体材料覆盖形成在第一阵列的每个纳米线周围的电绝缘材料层和相关联的液滴,形成在第一阵列的每个纳米线周围的第二阵列的纳米线。 因此,液滴自动地将第一阵列的纳米线与第二阵列的单个同轴纳米线连接。 这种类型的纳米结构可以特别用于形成热电转换器。
    • 2. 发明授权
    • Method for producing a nanostructure based on interconnected nanowires, nanostructure and use as thermoelectric converter
    • 基于互连的纳米线,纳米结构和用作热电转换器的纳米结构的制造方法
    • US07868243B2
    • 2011-01-11
    • US11826293
    • 2007-07-13
    • Marc PlissonnierFrederic GaillardRaphael SalotJean-Antoine Gruss
    • Marc PlissonnierFrederic GaillardRaphael SalotJean-Antoine Gruss
    • H01L35/00H01L21/44
    • H01L35/34H01L35/32Y10S977/89Y10T428/2971
    • Method for producing a nanostructure based on interconnected nanowires, nanostructure and use as thermoelectric converter The nanostructure comprises two arrays of nanowires made from respectively n-doped and p-doped semi-conducting material. The nanowires of the first array, for example of n type, are formed for example by VLS growth. A droplet of electrically conducting material that acted as catalyst during the growth step remains on the tip of each nanowire of the first array at the end of growth. A nanowire of the second array is then formed around each nanowire of the first array by covering a layer of electrically insulating material formed around each nanowire of the first array, and the associated droplet, with a layer of p-type semi-conducting material. A droplet thus automatically connects a nanowire of the first array with a single coaxial nanowire of the second array. This type of nanostructure can be used in particular to form a thermoelectric converter.
    • 用于制备基于互连纳米线,纳米结构并用作热电转换器的纳米结构的方法纳米结构包括由分别掺杂n型掺杂和p掺杂半导体材料制成的两个纳米线阵列。 第一阵列的纳米线,例如n型,例如通过VLS生长形成。 在生长步骤中用作催化剂的导电材料液滴在生长结束时保留在第一阵列的每个纳米线的尖端上。 然后通过用一层p型半导体材料覆盖形成在第一阵列的每个纳米线周围的电绝缘材料层和相关联的液滴,形成在第一阵列的每个纳米线周围的第二阵列的纳米线。 因此,液滴自动地将第一阵列的纳米线与第二阵列的单个同轴纳米线连接。 这种类型的纳米结构可以特别用于形成热电转换器。