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1. 发明申请

US20070079936A1 Bonded multi-layer RF window 审中-公开
标题翻译：保税多层射频窗口
公开(公告)号：US20070079936A1
公开(公告)日：2007-04-12
申请号：US11445559
申请日：2006-06-02
申请人： Maocheng Li , John Holland , Patrick Leahey , Xueyu Qian , Michael Barnes , Jon Clinton , You Wang , Nianci Han
发明人： Maocheng Li , John Holland , Patrick Leahey , Xueyu Qian , Michael Barnes , Jon Clinton , You Wang , Nianci Han
IPC分类号： B31B1/60 , C23F1/00 , C23C16/00
CPC分类号： H01P1/08 , B32B2315/02 , C04B35/63452 , C04B37/003 , C04B37/005 , C04B37/008 , C04B2237/10 , C04B2237/34 , C04B2237/341 , C04B2237/343 , C04B2237/708 , H01J37/32082 , Y10T156/10
摘要： A bonded multi-layer RF window may include an external layer of dielectric material having desired thermal properties, an internal layer of dielectric material exposed to plasma inside a reaction chamber, and an intermediate layer of bonding material between the external layer and the internal layer. Heat produced by the chemical reaction inside the chamber and by the transmission of RF energy through the window may be conducted from the internal layer to the external layer, which may be cooled during a semiconductor wafer manufacturing process. A bonded multi-layer RF window may include cooling conduits for circulating coolant to facilitate cooling of the internal layer; additionally or alternatively, gas distribution conduits and gas injection apertures may be included for delivering one or more process gases into a reaction chamber. A system including a plasma reaction chamber may employ the inventive bonded multi-layer RF window.
摘要翻译：键合的多层RF窗可以包括具有期望的热性质的外部介电材料层，暴露于反应室内的等离子体的介电材料的内部层，以及外层和内层之间的接合材料的中间层。通过室内的化学反应和通过窗口的RF能量传递产生的热量可以从内层传导到外层，其可在半导体晶片制造过程中被冷却。粘合的多层RF窗可以包括用于循环冷却剂以便于冷却内层的冷却管道; 另外或替代地，可以包括气体分配管道和气体注入孔，用于将一个或多个处理气体输送到反应室中。包括等离子体反应室的系统可以采用本发明的结合的多层RF窗口。

2. 发明授权

US06598615B1 Compact independent pressure control and vacuum isolation for a turbomolecular pumped plasma reaction chamber 失效
标题翻译：用于涡轮分子泵浦等离子体反应室的紧凑的独立压力控制和真空隔离
公开(公告)号：US06598615B1
公开(公告)日：2003-07-29
申请号：US09708345
申请日：2000-11-07
申请人： John Holland , Michael Barnes , Steve S. Y. Mak , Patrick Leahey , Jonathan D. Mohn
发明人： John Holland , Michael Barnes , Steve S. Y. Mak , Patrick Leahey , Jonathan D. Mohn
IPC分类号： C23C1650
CPC分类号： H01J37/32834 , Y10T137/0396 , Y10T137/86083 , Y10T137/86163
摘要： A method and apparatus for use in conjunction with a plasma reaction chamber provide both throttling functionality and independent vacuum isolation for a turbomolecular pump. A throttle valve provides for precise reaction chamber pressure regulation, and a gate valve prevents extended exposure of the turbomolecular pump to atmospheric conditions during cleaning or other maintenance operations. The throttle valve and the gate valve may be actuated independently.
摘要翻译：与等离子体反应室一起使用的方法和装置为涡轮分子泵提供节流功能和独立的真空隔离。节流阀提供精确的反应室压力调节，并且闸阀防止在清洁或其他维护操作期间涡轮分子泵在大气条件下的长时间暴露。节流阀和闸阀可独立地致动。

3. 发明授权

US06635578B1 Method of operating a dual chamber reactor with neutral density decoupled from ion density 失效
标题翻译：操作具有从离子密度分离的中性密度的双室反应器的方法
公开(公告)号：US06635578B1
公开(公告)日：2003-10-21
申请号：US09550646
申请日：2000-04-14
申请人： Songlin Xu , John Holland , Xueyu Qian
发明人： Songlin Xu , John Holland , Xueyu Qian
IPC分类号： H01L21302
CPC分类号： H01J37/32009 , H01J37/32321 , H01J37/32422 , H01J37/32871 , H01L21/31116
摘要： A method for operating a plasma reactor having a secondary chamber that is a neutral species source for the main chamber. The method in one embodiment of the invention consists of determining the desired increase in main chamber neutral particle density to be contributed by the secondary chamber for a given main chamber ion density range, and then to maintain the main chamber source power below a level beneath which the secondary chamber is capable of supplying the desired main chamber neutral density contribution.
摘要翻译：一种用于操作具有作为主室的中性物质源的二次室的等离子体反应器的方法。本发明的一个实施方案中的方法包括确定在给定的主室离子密度范围内由二级室贡献的主室中性粒子浓度的期望增加，然后将主室源功率维持在其下面的水平以下次级室能够提供所需的主室中性密度贡献。

4. 发明授权

US06447636B1 Plasma reactor with dynamic RF inductive and capacitive coupling control 失效
标题翻译：具有动态RF感应和电容耦合控制的等离子体电抗器
公开(公告)号：US06447636B1
公开(公告)日：2002-09-10
申请号：US09505578
申请日：2000-02-16
申请人： Xue-Yu Qian , Zhi-Wen Sun , Maocheng Li , John Holland , Arthur H. Sato , Valentin N. Todorov , Patrick L. Leahey , Robert E. Ryan
发明人： Xue-Yu Qian , Zhi-Wen Sun , Maocheng Li , John Holland , Arthur H. Sato , Valentin N. Todorov , Patrick L. Leahey , Robert E. Ryan
IPC分类号： H05H100
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/3299 , H05H1/46
摘要： The invention provides a system and a method for dynamic RF inductive and capacitive coupling control to improve plasma substrate processing, as well as for achieving contamination and defect reduction. A plasma reactor includes a substrate support disposed in a chamber. An RF coil is disposed adjacent the chamber for inductively coupling RF energy into the chamber. An electrode is disposed adjacent the chamber and has a voltage for capacitively coupling energy into the chamber. The electrode is spaced from the substrate support and the RF coil. An electrode adjusting member is coupled with the electrode for dynamically adjusting the voltage in the electrode to vary the capacitive coupling for improved plasma ignition and plasma stability. A Faraday shield may be placed between the RF coil and the plasma process region in the chamber to suppress capacitive coupling of the RF coil. Sensors may be provided to monitor the amounts of inductive coupling and capacitive coupling to provide feedback to a controller which is used to adjust the inductive coupling and capacitive coupling in real time to stabilize the plasma and achieve improved processing.
摘要翻译：本发明提供了用于动态RF感应和电容耦合控制以改善等离子体基板处理以及实现污染和缺陷减少的系统和方法。等离子体反应器包括设置在室中的基板支撑件。射频线圈邻近该腔室设置，用于将射频能量感应耦合到腔室中。电极邻近该腔室设置并且具有用于将能量电容耦合到腔室中的电压。电极与衬底支架和RF线圈间隔开。电极调节构件与电极耦合以动态地调节电极中的电压，以改变电容耦合以改善等离子体点火和等离子体稳定性。法拉第屏蔽可以放置在RF线圈和腔室中的等离子体处理区域之间，以抑制RF线圈的电容耦合。可以提供传感器来监测电感耦合和电容耦合的量以向控制器提供反馈，该控制器用于实时调整电感耦合和电容耦合以稳定等离子体并实现改进的处理。

5. 发明授权

US06727655B2 Method and apparatus to monitor electrical states at a workpiece in a semiconductor processing chamber 失效
标题翻译：监测半导体处理室中工件的电状态的方法和装置
公开(公告)号：US06727655B2
公开(公告)日：2004-04-27
申请号：US10055437
申请日：2001-10-26
申请人： Jon McChesney , Alex Paterson , Valentin N. Todorow , John Holland , Michael Barnes
发明人： Jon McChesney , Alex Paterson , Valentin N. Todorow , John Holland , Michael Barnes
IPC分类号： H01J724
CPC分类号： H01L21/67253 , H01J37/32082 , H01J37/32935 , H01L21/67069
摘要： A method and apparatus is disclosed to monitor and/or control the electrical states at a workpiece disposed in a plasma chamber that is in electrical communication with an RF signal source over a defined signal path. The method includes ascertaining an impedance of the signal path, sensing electrical characteristics of the RF power at the RF signal source and obtaining values of the electrical states at the workpiece. To provide a more accurate model of the electrical states at the workpiece, the modeling includes information concerning the impedance introduced by the signal path. This technique may be employed to provide feedback control of the RF generator, so that the electrical states may be dynamically adjusted be within predefined, or desired, parameters.
摘要翻译：公开了一种监测和/或控制设置在等离子体室中的工件上的电状态的方法和装置，该等离子体腔室通过限定的信号路径与RF信号源电连通。该方法包括确定信号路径的阻抗，感测RF信号源处的RF功率的电特性并获得工件处的电状态的值。为了提供工件上电状态的更准确的模型，建模包括有关由信号路径引入的阻抗的信息。可以采用这种技术来提供RF发生器的反馈控制，使得电状态可以在预定义或期望的参数内被动态调整。

6. 发明授权

US06685798B1 Plasma reactor having a symmetrical parallel conductor coil antenna 有权
标题翻译：具有对称并联导体线圈天线的等离子体反应器
公开(公告)号：US06685798B1
公开(公告)日：2004-02-03
申请号：US09611169
申请日：2000-07-06
申请人： John Holland , Valentin N. Todorow , Michael Barnes
发明人： John Holland , Valentin N. Todorow , Michael Barnes
IPC分类号： H05H100
CPC分类号： H01J37/321
摘要： The invention in one embodiment is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. An RF plasma source power supply is connected across each of the plural conductors.
摘要翻译：在一个实施例中的本发明在用于处理半导体工件的等离子体反应器中实现。反应器包括具有侧壁和天花板的真空室，腔室内的工件支撑基座，并且大致面对天花板，能够将工艺气体供应到室中的气体入口和覆盖在天花板上的螺线管交错的并行导体线圈天线并且包括缠绕在大致垂直于天花板的相应同心螺旋螺线管中的对称轴线的第一多个导体，其具有来自对称轴线的至少几乎均匀的横向位移，每个螺旋螺线管在与另一个螺旋螺线管平行的方向上偏离对称轴。 RF等离子体源电源连接在多个导体中的每一个上。

7. 发明授权

US06462481B1 Plasma reactor having a symmetric parallel conductor coil antenna 有权
公开(公告)号：US06462481B1
公开(公告)日：2002-10-08
申请号：US09611345
申请日：2000-07-06
申请人： John Holland , Valentin N. Todorow , Michael Barnes
发明人： John Holland , Valentin N. Todorow , Michael Barnes
IPC分类号： H01J724
CPC分类号： H01J37/321
摘要： The invention is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. An RF plasma source power supply is connected across each of the plural conductors.

8. 发明授权

US06694915B1 Plasma reactor having a symmetrical parallel conductor coil antenna 有权
标题翻译：具有对称并联导体线圈天线的等离子体反应器
公开(公告)号：US06694915B1
公开(公告)日：2004-02-24
申请号：US09611170
申请日：2000-07-06
申请人： John Holland , Valentin N. Todorow , Michael Barnes
发明人： John Holland , Valentin N. Todorow , Michael Barnes
IPC分类号： C23C16507
CPC分类号： H01J37/321
摘要： The invention in one embodiment is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. A RF plasma source power supply is connected across each of the plural conductors.
摘要翻译：在一个实施例中的本发明在用于处理半导体工件的等离子体反应器中实现。反应器包括具有侧壁和天花板的真空室，腔室内的工件支撑基座，并且大致面对天花板，能够将工艺气体供应到室中的气体入口和覆盖在天花板上的螺线管交错的并行导体线圈天线并且包括缠绕在大致垂直于天花板的相应同心螺旋螺线管中的对称轴线的第一多个导体，其具有来自对称轴线的至少几乎均匀的横向位移，每个螺旋螺线管在与另一个螺旋螺线管平行的方向上偏离对称轴。 RF等离子体源电源连接在多个导体中的每一个上。

9. 发明授权

US06617794B2 Method for controlling etch uniformity 失效
公开(公告)号：US06617794B2
公开(公告)日：2003-09-09
申请号：US10016971
申请日：2001-12-14
申请人： Michael Barnes , John Holland , Valentin Todorov , Mohit Jain , Alexander Paterson
发明人： Michael Barnes , John Holland , Valentin Todorov , Mohit Jain , Alexander Paterson
IPC分类号： H01J724
CPC分类号： H01J37/32174 , H01J37/321
摘要： The present invention generally provides a method for processing a semiconductor substrate, wherein the method includes positioning a substrate in a processing chamber having at least a first and second coils positioned above the substrate and supplying a first electrical current to the first coil. The method further includes supplying a second current to the second coil and regulating a current ratio of electrical current supplied to the first and second coils with a power distribution network in communication with the first and second coils and a single power supply. The method may further include controlling plasma uniformity in a semiconductor processing chamber, wherein the control process includes positioning a first coil above the processing chamber, the first coil being concentrically positioned about a vertical axis of the processing chamber, and positioning a second coil above the processing chamber, the second coil being concentrically positioned about the vertical axis of the processing chamber and radially outward from the first coil. The control process may further include supplying electrical power to the first and second coils with a single power distribution network to selectively regulate a magnetic field intensity generated by the first and second coils above a workpiece in the processing chamber.

10. 发明授权

US5589737A Plasma processor for large workpieces 失效
标题翻译：等离子处理器用于大型工件
公开(公告)号：US5589737A
公开(公告)日：1996-12-31
申请号：US354122
申请日：1994-12-06
申请人： Michael Barnes , Neil Benjamin , John Holland , Richard Beer , Robert Veltrop
发明人： Michael Barnes , Neil Benjamin , John Holland , Richard Beer , Robert Veltrop
IPC分类号： H05H1/46 , C23C16/507 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01J7/24
CPC分类号： H01J37/3222 , H01J37/321 , H01J37/32238
摘要： A plasma processor for large workpieces includes a vacuum chamber having plural individually supported dielectric windows for coupling an r.f. field originating outside of the chamber into the chamber to excite the plasma. A planar coil for inductively deriving the field has plural segments with the same electrical length, each including an element connected in parallel with an element of another segment.
摘要翻译：用于大型工件的等离子体处理器包括具有多个单独支撑的电介质窗口的真空室，用于连接r.f。来自腔室外部的腔室进入腔室以激发等离子体。用于感应地导出场的平面线圈具有多个具有相同电长度的段，每个段具有与另一段的元件并联连接的元件。

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