会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Semiconductor integrated circuit, drive circuit, and plasma display apparatus
    • 半导体集成电路,驱动电路和等离子体显示装置
    • US07511441B2
    • 2009-03-31
    • US11089000
    • 2005-03-24
    • Makoto OnozawaTomokatsu KishiYoshinori OkadaMasatoshi Hira
    • Makoto OnozawaTomokatsu KishiYoshinori OkadaMasatoshi Hira
    • H02P6/06
    • G09G3/2965G09G3/299G09G2300/0408G09G2310/0267G09G2310/0289G09G2320/041G09G2330/024
    • A semiconductor integrated circuit capable of reducing the influence of the difference in ambient temperature etc. and realizing a stable phase adjustment circuit has been disclosed. The semiconductor integrated circuit comprises a delay time adjustment circuit for delaying the rising edge or the falling edge of an input signal and changing the amount of delay, a comparison circuit for comparing an output signal from the delay time adjustment circuit with a predetermined voltage, a high-level shift circuit for shifting an output signal from the comparison circuit into a signal on the basis of an output reference voltage, and an output amplifier circuit for amplifying an output signal from the high-level shift circuit and outputting a signal for driving the semiconductor device, wherein the delay time adjustment circuit, the comparison circuit, the high-level shift circuit, and the output amplifier circuit are formed on a single chip.
    • 已经公开了能够降低环境温度差等的影响并实现稳定的相位调整电路的半导体集成电路。 半导体集成电路包括用于延迟输入信号的上升沿或下降沿并改变延迟量的延迟时间调整电路,用于将来自延迟时间调整电路的输出信号与预定电压进行比较的比较电路, 高电平移位电路,用于基于输出参考电压将来自比较电路的输出信号转换为信号;以及输出放大器电路,用于放大来自高电平移位电路的输出信号,并输出驱动信号的信号 半导体器件,其中延迟时间调节电路,比较电路,高电平移位电路和输出放大器电路形成在单个芯片上。
    • 7. 发明申请
    • Plasma display device
    • 等离子显示装置
    • US20070075931A1
    • 2007-04-05
    • US11525949
    • 2006-09-25
    • Makoto OnozawaYasunobu HashimotoTomokatsu KishiMasayuki Shibata
    • Makoto OnozawaYasunobu HashimotoTomokatsu KishiMasayuki Shibata
    • G09G3/28
    • H01J11/12G09G3/2965H01J11/38
    • A plasma display device is provided which has a first substrate and a second substrate; a first electrode and a second electrode formed on the first substrate to perform sustain discharge on the first substrate; a third electrode formed on the second substrate to perform address discharge between the second electrode and the third electrode; a dielectric layer formed of a silicon oxide film in a manner to cover the first and second electrodes on the first substrate; and a discharge gas existing between the first and second substrates and having a Xe concentration within 10%±2.5%. The dielectric layer has a thickness within 10 μm±2.5 μm. The first to third electrodes constitute one pixel, and display of 1920×1080 pixels is possible.
    • 提供了具有第一基板和第二基板的等离子体显示装置; 第一电极和第二电极,形成在第一基板上,以在第一基板上进行维持放电; 形成在所述第二基板上以在所述第二电极和所述第三电极之间执行寻址放电的第三电极; 以覆盖第一基板上的第一和第二电极的方式由氧化硅膜形成的电介质层; 以及存在于第一和第二基板之间并且Xe浓度在10%±2.5%内的放电气体。 电介质层的厚度在10um±2.5μm之内。 第一至第三电极构成一个像素,并且1920×1080像素的显示是可能的。