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1. 发明申请

US20100329295A1 LASER DIODE 有权
标题翻译：激光二极管
公开(公告)号：US20100329295A1
公开(公告)日：2010-12-30
申请号：US12797111
申请日：2010-06-09
申请人： Makoto Nakashima , Takahiro Yokoyama , Sachio Karino , Eiji Takase , Yuta Yoshida
发明人： Makoto Nakashima , Takahiro Yokoyama , Sachio Karino , Eiji Takase , Yuta Yoshida
IPC分类号： H01S5/0625
CPC分类号： H01S5/4031 , H01S5/0421 , H01S5/0425 , H01S5/22
摘要： A laser diode includes: a plurality of strip-shaped laser structures arranged in parallel with each other, and including a lower cladding layer, an active layer, and an upper cladding layer in this order; a plurality of strip-shaped upper electrodes singly formed on a top face of the respective laser structures, and being electrically connected to the upper cladding layer; a plurality of wiring layers being at least singly and electrically connected to one of the respective upper electrodes; and a plurality of pad electrodes formed in a region different from that of the plurality of laser structures, and being electrically connected to one of the respective upper electrodes with the wiring layer in between. The respective wiring layers have an end in a region different from a region where the respective wiring layers are contacted with the upper electrode.
摘要翻译：激光二极管包括：多个彼此平行布置的条形激光器结构，并且包括下包层，有源层和上覆层; 多个条形上电极单独地形成在各个激光器结构的顶面上，并且电连接到上包层; 多个布线层至少单独并电连接到各个上电极之一; 以及多个焊盘电极，其形成在与所述多个激光结构的区域不同的区域中，并且其间布线层电连接到各个上电极之一。各个布线层的各个布线层与上部电极接触的区域的端部不同。

2. 发明授权

US08802458B2 Laser diode and method of manufacturing the same 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US08802458B2
公开(公告)日：2014-08-12
申请号：US13348501
申请日：2012-01-11
申请人： Makoto Nakashima , Takahiro Yokoyama , Sachio Karino
发明人： Makoto Nakashima , Takahiro Yokoyama , Sachio Karino
IPC分类号： H01L33/36
CPC分类号： H01S5/4031 , H01S5/02276 , H01S5/0425 , H01S5/22 , H01S2301/14 , H01S2301/176
摘要： A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.
摘要翻译：提供能够独立地驱动每个脊部的激光二极管，并且抑制由于施加到脊部的应力而导致的偏振角的旋转而不降低可靠性及其制造方法。激光二极管包括：三个或更多个带状脊部部分，其间具有彼此平行的带状沟槽，其间依次包括至少下包层，有源层和上包层; 每个脊部的顶面上的上电极，与上包层电连接; 在空气中至少在沟槽上方电连接到上电极的布线层; 以及与脊部和沟槽的区域不同的区域中的焊盘电极，通过布线层与上部电极电连接。

3. 发明授权

US08619829B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US08619829B2
公开(公告)日：2013-12-31
申请号：US12813235
申请日：2010-06-10
申请人： Yuta Yoshida , Sachio Karino , Takahiro Yokoyama , Makoto Nakashima , Eiji Takase
发明人： Yuta Yoshida , Sachio Karino , Takahiro Yokoyama , Makoto Nakashima , Eiji Takase
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , H01S5/02276 , H01S5/0425 , H01S5/2275
摘要： The present invention provides a semiconductor laser device including: a plurality of light emitting sections arranged in strip shapes in parallel; a plurality of first electrodes arranged along top faces of the light emitting sections, respectively; an insulating film covering a whole surface of the plurality of first electrodes, and including contact apertures corresponding to the first electrodes, respectively; a plurality of second electrodes arranged in positions different from those of the plurality of light emitting sections, correspondingly to the first electrodes; a plurality of wiring layers arranged on the insulating layer, and electrically connecting the second electrodes and the corresponding first electrodes through the contact apertures, respectively; and a plurality of window regions arranged for the light emitting sections in the insulating film so as to expose the first electrodes, respectively, and including at least two window regions having areas different from each other.
摘要翻译：本发明提供一种半导体激光装置，包括：多个发光部分，其平行排列成条状; 分别沿着所述发光部的顶面配置的多个第一电极; 覆盖所述多个第一电极的整个表面的绝缘膜，并且分别包括对应于所述第一电极的接触孔; 与所述多个发光部的位置不同的多个第二电极，对应于所述第一电极; 布置在所述绝缘层上的多个布线层，并分别通过所述接触孔与所述第二电极和所述对应的第一电极电连接; 以及多个窗口区域，其布置成用于绝缘膜中的发光部分，以分别暴露第一电极，并且包括至少两个具有彼此不同区域的窗口区域。

4. 发明授权

US08619826B2 Laser diode 有权
标题翻译：激光二极管
公开(公告)号：US08619826B2
公开(公告)日：2013-12-31
申请号：US12797111
申请日：2010-06-09
申请人： Makoto Nakashima , Takahiro Yokoyama , Sachio Karino , Eiji Takase , Yuta Yoshida
发明人： Makoto Nakashima , Takahiro Yokoyama , Sachio Karino , Eiji Takase , Yuta Yoshida
IPC分类号： H01S3/00
CPC分类号： H01S5/4031 , H01S5/0421 , H01S5/0425 , H01S5/22
摘要： A laser diode includes: a plurality of strip-shaped laser structures arranged in parallel with each other, and including a lower cladding layer, an active layer, and an upper cladding layer in this order; a plurality of strip-shaped upper electrodes singly formed on a top face of the respective laser structures, and being electrically connected to the upper cladding layer; a plurality of wiring layers being at least singly and electrically connected to one of the respective upper electrodes; and a plurality of pad electrodes formed in a region different from that of the plurality of laser structures, and being electrically connected to one of the respective upper electrodes with the wiring layer in between. The respective wiring layers have an end in a region different from a region where the respective wiring layers are contacted with the upper electrode.
摘要翻译：激光二极管包括：多个彼此平行布置的条形激光器结构，并且包括下包层，有源层和上覆层; 多个条形上电极单独地形成在各个激光器结构的顶面上，并且电连接到上包层; 多个布线层至少单独并电连接到各个上电极之一; 以及多个焊盘电极，其形成在与所述多个激光结构的区域不同的区域中，并且其间布线层电连接到各个上电极之一。各个布线层的各个布线层与上部电极接触的区域的端部不同。

5. 发明申请

US20120107972A1 LASER DIODE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US20120107972A1
公开(公告)日：2012-05-03
申请号：US13348501
申请日：2012-01-11
申请人： Makoto Nakashima , Takahiro Yokoyama , Sachio Karino
发明人： Makoto Nakashima , Takahiro Yokoyama , Sachio Karino
IPC分类号： H01L33/36
CPC分类号： H01S5/4031 , H01S5/02276 , H01S5/0425 , H01S5/22 , H01S2301/14 , H01S2301/176
摘要： A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.
摘要翻译：提供能够独立地驱动每个脊部的激光二极管，并且抑制由于施加到脊部的应力而导致的偏振角的旋转而不降低可靠性及其制造方法。激光二极管包括：三个或更多个带状脊部部分，其间具有彼此平行的带状沟槽，其间依次包括至少下包层，有源层和上包层; 每个脊部的顶面上的上电极，与上包层电连接; 在空气中至少在沟槽上方电连接到上电极的布线层; 以及与脊部和沟槽的区域不同的区域中的焊盘电极，通过布线层与上部电极电连接。

6. 发明申请

US20110002354A1 SEMICONDUCTOR LASER DEVICE 有权
标题翻译：半导体激光器件
公开(公告)号：US20110002354A1
公开(公告)日：2011-01-06
申请号：US12813235
申请日：2010-06-10
申请人： Yuta Yoshida , Sachio Karino , Takahiro Yokoyama , Makoto Nakashima , Eiji Takase
发明人： Yuta Yoshida , Sachio Karino , Takahiro Yokoyama , Makoto Nakashima , Eiji Takase
IPC分类号： H01S5/026 , H01S5/22
CPC分类号： H01S5/4031 , H01S5/02276 , H01S5/0425 , H01S5/2275
摘要： The present invention provides a semiconductor laser device including: a plurality of light emitting sections arranged in strip shapes in parallel; a plurality of first electrodes arranged along top faces of the light emitting sections, respectively; an insulating film covering a whole surface of the plurality of first electrodes, and including contact apertures corresponding to the first electrodes, respectively; a plurality of second electrodes arranged in positions different from those of the plurality of light emitting sections, correspondingly to the first electrodes; a plurality of wiring layers arranged on the insulating layer, and electrically connecting the second electrodes and the corresponding first electrodes through the contact apertures, respectively; and a plurality of window regions arranged for the light emitting sections in the insulating film so as to expose the first electrodes, respectively, and including at least two window regions having areas different from each other.
摘要翻译：本发明提供一种半导体激光装置，包括：多个发光部分，其平行排列成条状; 分别沿着所述发光部的顶面配置的多个第一电极; 覆盖所述多个第一电极的整个表面的绝缘膜，并且分别包括对应于所述第一电极的接触孔; 与所述多个发光部的位置不同的多个第二电极，对应于所述第一电极; 布置在所述绝缘层上的多个布线层，并分别通过所述接触孔与所述第二电极和所述对应的第一电极电连接; 以及多个窗口区域，其布置成用于绝缘膜中的发光部分，以分别暴露第一电极，并且包括至少两个具有彼此不同区域的窗口区域。

7. 发明授权

US08130804B2 Laser diode and method of manufacturing the same 失效
标题翻译：激光二极管及其制造方法
公开(公告)号：US08130804B2
公开(公告)日：2012-03-06
申请号：US12604853
申请日：2009-10-23
申请人： Makoto Nakashima , Takahiro Yokoyama , Sachio Karino
发明人： Makoto Nakashima , Takahiro Yokoyama , Sachio Karino
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , H01S5/02276 , H01S5/0425 , H01S5/22 , H01S2301/14 , H01S2301/176
摘要： A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.
摘要翻译：提供能够独立地驱动每个脊部的激光二极管，并且抑制由于施加到脊部的应力而导致的偏振角的旋转而不降低可靠性及其制造方法。激光二极管包括：三个或更多个带状脊部部分，其间具有彼此平行的带状沟槽，其间依次包括至少下包层，有源层和上包层; 每个脊部的顶面上的上电极，与上包层电连接; 在空气中至少在沟槽上方电连接到上电极的布线层; 以及与脊部和沟槽的区域不同的区域中的焊盘电极，通过布线层与上部电极电连接。

8. 发明申请

US20100111129A1 LASER DIODE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：激光二极管及其制造方法
公开(公告)号：US20100111129A1
公开(公告)日：2010-05-06
申请号：US12604853
申请日：2009-10-23
申请人： Makoto Nakashima , Takahiro Yokoyama , Sachio Karino
发明人： Makoto Nakashima , Takahiro Yokoyama , Sachio Karino
IPC分类号： H01S5/00 , H01L33/00
CPC分类号： H01S5/4031 , H01S5/02276 , H01S5/0425 , H01S5/22 , H01S2301/14 , H01S2301/176
摘要： A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.
摘要翻译：提供能够独立地驱动每个脊部的激光二极管，并且抑制由于施加到脊部的应力而导致的偏振角的旋转而不降低可靠性及其制造方法。激光二极管包括：三个或更多个带状脊部部分，其间具有彼此平行的带状沟槽，其间依次包括至少下包层，有源层和上包层; 每个脊部的顶面上的上电极，与上包层电连接; 在空气中至少在沟槽上方电连接到上电极的布线层; 以及与脊部和沟槽的区域不同的区域中的焊盘电极，通过布线层与上部电极电连接。

9. 发明申请

US20100043010A1 DATA PROCESSING METHOD, CLUSTER SYSTEM, AND DATA PROCESSING PROGRAM 失效
标题翻译：数据处理方法，集群系统和数据处理程序
公开(公告)号：US20100043010A1
公开(公告)日：2010-02-18
申请号：US12366731
申请日：2009-02-06
申请人： Takahiro Yokoyama , Tsunehiko Baba , Masanori Kawashima , Kazuho Tanaka
发明人： Takahiro Yokoyama , Tsunehiko Baba , Masanori Kawashima , Kazuho Tanaka
IPC分类号： G06F9/46
CPC分类号： G06F13/4022 , G06F11/2038 , G06F11/2041 , G06F11/2048 , G06F11/2097
摘要： Provided is a data processing system which includes: a first computer for receiving a processing request for a task processing, executing the processing, and holding data used therein; and a second computer for holding a duplicate of the data held in the first computer, halting the first computer if the first computer is determined to be halted, and receiving and processing the processing request. The first computer receives at least an update request as the processing request including request identification information to which unique numbers assigned to the individual processing requests in an ascending order are allocated, updates the held data, and transmits the update request including the request identification information to the second computer. The second computer stores a transmitted reference request and the update request as the processing requests, and processes the processing requests in an ascending order of the unique numbers included in the individual processing requests.
摘要翻译：提供一种数据处理系统，其包括：第一计算机，用于接收任务处理的处理请求，执行处理并保存其中使用的数据; 以及第二计算机，用于保存保存在第一计算机中的数据的副本，如果确定第一计算机被停止，则停止第一计算机，并且接收和处理处理请求。第一计算机至少接收到作为处理请求的更新请求，包括分配给按照升序分配给各个处理请求的唯一编号的请求标识信息，更新所保持的数据，并将包括请求标识信息的更新请求发送到第二台电脑。第二计算机将发送的参考请求和更新请求存储为处理请求，并且以包括在各个处理请求中的唯一编号的升序来处理处理请求。

10. 发明申请

US20060054932A1 Semiconductor device, high-frequency amplifier and personal digital assistant 审中-公开
标题翻译：半导体器件，高频放大器和个人数字助理
公开(公告)号：US20060054932A1
公开(公告)日：2006-03-16
申请号：US11224043
申请日：2005-09-13
申请人： Takahiro Yokoyama , Hirotaka Miyamoto
发明人： Takahiro Yokoyama , Hirotaka Miyamoto
IPC分类号： H01L31/109 , H01L29/739
CPC分类号： H03F3/189 , H01L27/0605 , H01L29/1004 , H01L29/41708 , H01L29/7371 , H03F1/30 , H03F2200/372
摘要： A semiconductor device includes a GaAs substrate, a sub-collector layer provided on the GaAs substrate, a collector layer provided on part of the sub-collector layer, a base layer (first semiconductor layer) provided on the collector layer, a second emitter layer (second semiconductor layer) provided on part of the base layer located in an intrinsic base region, and a first emitter layer provided on the second emitter layer.
摘要翻译：半导体器件包括GaAs衬底，设置在GaAs衬底上的子集电极层，设置在子集电极层的一部分上的集电极层，设置在集电极层上的基极层（第一半导体层），第二发射极层（第二半导体层），其设置在位于本征基极区域中的基极层的一部分上，以及设置在第二发射极层上的第一发射极层。

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