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1. 发明授权

US09101618B2 Method for treating and/or preventing neurodegenerative disease by adiponectin receptor agonist 有权
标题翻译：通过脂联素受体激动剂治疗和/或预防神经变性疾病的方法
公开(公告)号：US09101618B2
公开(公告)日：2015-08-11
申请号：US13590065
申请日：2012-08-20
申请人： Makoto Hashimoto , Kazunari Sekiyama , Yoshiki Takamatsu , Masayo Fujita , Akio Sekigawa
发明人： Makoto Hashimoto , Kazunari Sekiyama , Yoshiki Takamatsu , Masayo Fujita , Akio Sekigawa
IPC分类号： A61P25/28 , A61P25/14 , A61P25/00 , A61K31/4439 , A61K38/22
CPC分类号： A61K31/4439 , A61K38/22
摘要： The present invention was accomplished for the purpose of developing a method for effectively treating and/or preventing synucleinopathies, and is based on a discovery that an adiponectin receptor agonist suppresses α (alpha)-synuclein aggregation, tau phosphorylation and a decrease in proteasomal activity.The method of the present invention for treating and/or preventing neurodegenerative diseases includes a step of administering an effective dose of at least one effective element selected from a group consisting of: adiponectin as an adiponectin receptor agonist; a compound inducing expression of adiponectin; globular adiponectin; and a compound inducing expression of globular adiponectin. The present invention further provides a screening method of the adiponectin receptor agonist for treating and/or preventing neurodegenerative diseases.
摘要翻译：本发明是为了开发有效治疗和/或预防突触核蛋白病的方法而完成的，并且基于脂联素受体激动剂抑制α（α） - 突触核蛋白聚集，tau磷酸化和蛋白酶体活性降低的发现。用于治疗和/或预防神经变性疾病的本发明的方法包括施用有效剂量的至少一种选自脂联素作为脂联素受体激动剂的有效元素的步骤; 诱导脂联素表达的化合物; 球状脂联素; 以及诱导球状脂联素表达的化合物。本发明还提供了用于治疗和/或预防神经变性疾病的脂联素受体激动剂的筛选方法。

2. 发明申请

US20080155715A1 Stress-Responsive Root-Specific Genes 失效
标题翻译：胁迫响应根特异性基因
公开(公告)号：US20080155715A1
公开(公告)日：2008-06-26
申请号：US10515095
申请日：2003-05-20
申请人： Setsuko Komatsu , Tomokazu Koshiba , Shinichiro Sawa , Makoto Hashimoto
发明人： Setsuko Komatsu , Tomokazu Koshiba , Shinichiro Sawa , Makoto Hashimoto
IPC分类号： A01H5/00 , C12N15/29 , C07K14/00 , C07H21/00 , C07K16/00 , C12N15/63
CPC分类号： C12N15/8271 , C07K14/415
摘要： The present inventors succeeded in cloning a rice stress-responsive gene, RSI1. They discovered that stress-responsive plants can be generated by using the isolated gene, or genes functionally equivalent thereto. The present invention is useful in fields such as plant breeding.
摘要翻译：本发明人成功地克隆了水稻胁迫响应基因RSI1。他们发现通过使用分离的基因或与其功能等同的基因可以产生应激反应性植物。本发明在植物育种等领域中是有用的。

3. 发明申请

US20060065139A1 Screen printing apparatus 有权
标题翻译：丝网印刷设备
公开(公告)号：US20060065139A1
公开(公告)日：2006-03-30
申请号：US10514746
申请日：2003-05-29
申请人： Tomoya Katano , Makoto Hashimoto
发明人： Tomoya Katano , Makoto Hashimoto
IPC分类号： B41F15/42
CPC分类号： B41F15/46 , Y10S101/34
摘要： A screen printing apparatus has a housing-like main body that is long sideways. Inside the main body, there are provided a paste-receiving chamber (1); a roller (2) provided along the axis of the main body; a scraper (3) that extends forward and diagonally downward, and, in printing, whose tip slides on the upper face of a screen plate (S) while being in contact with the face; and a guide plate (5) that extends backward and diagonally downward so as to be opposed to the scraper, and, in printing, whose tip ends at a height where a predetermined gap (4) is maintained from the tip to the screen plate upper face. Paste (H) can be filled in opening holes (S′) of the screen plate by fluid pressure of the paste discharged from a discharge opening (6) opened between the scraper and the guide plate. The filling is achieved by moving the main body forward, or in a printing direction, and rotating the roller in one direction. In each printing, a residual (H′) of the paste adhered to the screen plate upper face in the preceding printing is introduced to the discharge opening (6) through the gap (4), so that the residual is mixed to the paste discharged from the discharge opening and can be used for printing.
摘要翻译：丝网印刷装置具有长边的壳体状主体。在主体内部设置有一个膏状容纳室（1）; 沿着主体的轴线设置的辊子（2）; 刮刀（3），其向前和向下延伸并且在打印时其尖端在与所述面部接触的同时在丝网板（S）的上表面上滑动; 以及向后方倾斜向下延伸以与刮刀相对的引导板（5），并且在印刷中，其顶端在从尖端到筛板上保持预定间隙（4）的高度处终止面对。浆料（H）可以通过从刮板和引导板之间打开的排出口（6）排出的浆料的流体压力填充在筛板的孔（S'）中。通过将主体向前或在打印方向上移动并沿一个方向旋转辊来实现填充。在每次印刷中，在先前的印刷中粘贴在筛板上表面上的糊状物的残留物（H'）通过间隙（4）引入排出口（6），使残留物与排出的糊料混合从排放口可以用于印刷。

4. 发明申请

US20060033103A1 Display device, method of production of the same, and projection type display device 有权
公开(公告)号：US20060033103A1
公开(公告)日：2006-02-16
申请号：US11251430
申请日：2005-10-14
申请人： Shingo Makimura , Makoto Hashimoto , Yoshiro Okawa , Tomohiro Wada , Kazunori Kataoka
发明人： Shingo Makimura , Makoto Hashimoto , Yoshiro Okawa , Tomohiro Wada , Kazunori Kataoka
IPC分类号： H01L29/04
CPC分类号： H01L21/02675 , G02F1/13454 , G02F1/1368 , G02F2202/104 , H01L21/02532 , H01L21/0262 , H01L21/2022 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78609 , H01L29/78633 , H01L29/78675
摘要： A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors. This is because a higher speed operation is required for the peripheral transistors than the pixel transistors due to scanning of pixels and sampling of image signals.

5. 发明申请

US20060001024A1 Display device, method of production of the same, and projection type display device 有权
公开(公告)号：US20060001024A1
公开(公告)日：2006-01-05
申请号：US11207347
申请日：2005-08-19
申请人： Shingo Makimura , Makoto Hashimoto , Yoshiro Okawa , Tomohiro Wada , Kazunori Kataoka
发明人： Shingo Makimura , Makoto Hashimoto , Yoshiro Okawa , Tomohiro Wada , Kazunori Kataoka
IPC分类号： H01L29/04
CPC分类号： H01L21/02675 , G02F1/13454 , G02F1/1368 , G02F2202/104 , H01L21/02532 , H01L21/0262 , H01L21/2022 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78609 , H01L29/78633 , H01L29/78675
摘要： A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors. This is because a higher speed operation is required for the peripheral transistors than the pixel transistors due to scanning of pixels and sampling of image signals.

6. 发明申请

US20050213284A1 ELECTRIC DOUBLE LAYER CAPACITOR, ELECTROLYTE BATTERY AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：电双层电容器，电解电池及其制造方法
公开(公告)号：US20050213284A1
公开(公告)日：2005-09-29
申请号：US11084100
申请日：2005-03-21
申请人： Fumio Tatezono , Seiji Omura , Kiyotaka Ito , Tsuyoshi Komatsu , Makoto Hashimoto
发明人： Fumio Tatezono , Seiji Omura , Kiyotaka Ito , Tsuyoshi Komatsu , Makoto Hashimoto
IPC分类号： H01G9/00 , H01G9/10 , H01G11/00 , H01G11/66 , H01G11/70 , H01G11/78 , H01G11/80 , H01G11/82 , H01G11/84 , H01M2/02 , H01M2/08 , H01M10/04 , H01M10/05 , H01M10/0585 , H01M10/34
CPC分类号： H01M10/345 , H01G9/10 , H01G9/155 , H01M2/08 , H01M10/38 , Y02E60/13 , Y10T29/417 , Y10T29/49108
摘要： An electric double layer capacitor is provided with a cell, in which a pair of polarizable electrodes, which are impregnated with an electrolyte, are disposed in opposition on either side of a separator; wherein the polarizable electrodes are provided with collector electrodes, a peripheral portion of the cell is sealed by a sealing member composed of synthetic resin, and the sealing member is formed by abutting two case halves. A manufacturing method for the capacitor includes a process step of providing at least one long slit in the collector electrodes; a step of forming the case halves formed by insert molding on the collector electrodes and filling the slit, the case halves comprising a recess, one side of which extends in the lengthwise direction of the slit and, the cell being fitted into a portion inward from the slit; and a step of joining the case halves by abutting the case halves and applying ultrasonic vibration either in a perpendicular direction or a diagonal direction with respect to the lengthwise direction of the slit.
摘要翻译：电双层电容器设置有电池，其中浸渍有电解质的一对可极化电极相对于隔板的任一侧设置; 其中，所述极化电极设置有集电极，所述电池的周边部分由合成树脂构成的密封构件密封，所述密封构件通过抵靠两个半壳形成。电容器的制造方法包括：在集电极中设置至少一个长狭缝的工序; 通过嵌入成型形成在收集电极上并填充狭缝的壳体半部的步骤，壳体半部包括凹部，其一侧在狭缝的长度方向上延伸，并且电池被嵌入到从狭缝以及通过邻接壳体半部并且相对于狭缝的长度方向在垂直方向或对角线方向上施加超声波振动来连接壳体半部的步骤。

7. 发明授权

US5719050A Animal cell culturing media containing N-acetyl-L-glutamic acid 失效
标题翻译：含有N-乙酰基-L-谷氨酸的动物细胞培养基
公开(公告)号：US5719050A
公开(公告)日：1998-02-17
申请号：US357379
申请日：1994-12-16
申请人： Makoto Hashimoto , Tsutomu Naito
发明人： Makoto Hashimoto , Tsutomu Naito
IPC分类号： C12N5/00 , C12N5/16 , C12P21/08 , C12N5/02 , C12N5/06 , C12N5/08 , C12N5/12
CPC分类号： C12N5/163 , C12N5/0037 , C12N5/005 , C12N2500/30 , C12N2500/32 , C12N2500/38 , C12N2500/46 , C12N2500/90 , C12N2500/95 , C12N2501/999 , Y10S530/808 , Y10S530/809
摘要： The present invention relates to a medium composition for culturing animal cells which is obtained by combining at least one component selected from the group of substances mentioned below with a medium composition comprising inorganic salts, saccharides, vitamins and amino acids; a method for culturing animal cells comprising adding to a medium for the cells as a cell growth promoting substance at least one component selected from the group mentioned below; a method for enhancing the antibody production of antibody-producing cells comprising adding to a medium for the cells at least one component selected from the group mentioned below; a composition for enhancing the antibody production of antibody-producing cells which is obtained by combining at least one antibody production enhancing agent selected from the group mentioned below with a composition comprising inorganic salts, saccharides, vitamins and amino acids; and a method for producing a physiologically active substance comprising culturing animal cells on a medium containing at least one cell growth promoting substance selected from the group mentioned below, and then harvesting the cells grown or the substances produced by the cells. D-penicillamine or salts thereof Acetoacetic acid or salts thereof Biguanides Vitamin K.sub.5 or salts thereof N-acetyl-L-glutamic acid or salts thereof.
摘要翻译：本发明涉及一种用于培养动物细胞的培养基组合物，其通过将选自下述物质的至少一种成分与包含无机盐，糖类，维生素和氨基酸的培养基组合物合并而获得; 培养动物细胞的方法，包括向细胞培养基中添加选自下述的至少一种成分作为细胞生长促进物质; 一种用于增强抗体产生细胞的抗体产生的方法，包括向细胞的培养基中加入至少一种选自下述的组分; 通过将选自下述组中的至少一种抗体产生增强剂与包含无机盐，糖类，维生素和氨基酸的组合物组合而获得的用于增强抗体产生细胞抗体产生的组合物; 以及生产生理活性物质的方法，包括在含有选自下述组中的至少一种细胞生长促进物质的培养基上培养动物细胞，然后收获生长的细胞或由细胞产生的物质。 D-青霉胺或其盐乙酰乙酸或其盐双胍维生素K5或其盐N-乙酰基-L-谷氨酸或其盐。

8. 发明授权

US5395772A SOI type MOS transistor device 失效
标题翻译： SOI型MOS晶体管器件
公开(公告)号：US5395772A
公开(公告)日：1995-03-07
申请号：US213815
申请日：1994-03-17
申请人： Yoshihiro Miyazawa , Makoto Hashimoto
发明人： Yoshihiro Miyazawa , Makoto Hashimoto
IPC分类号： H01L27/12 , H01L21/336 , H01L29/78 , H01L29/786 , H01L21/265 , H01L29/68
CPC分类号： H01L29/66772 , H01L29/78621
摘要： An SOIMOS transistor device which comprises a substrate, an insulating film formed on the substrate, a source and a drain sandwiching a channel region therebetween and formed on the insulating film is described. The channel region has regions in contact with the source and the drain, respectively, and each region has a concentration of an impurity lower than those of the source and the drain, and a gate electrode is formed on the SOI layer. The regions are formed by diffusion of the impurity from the source and the drain in lateral directions, respectively, and extending beneath the gate electrode along the thickness of the source and the drain.
摘要翻译：描述了一种SOIMOS晶体管器件，其包括衬底，形成在衬底上的绝缘膜，夹在其间并形成在绝缘膜上的沟道区域的源极和漏极。沟道区域分别具有与源极和漏极接触的区域，并且每个区域具有比源极和漏极低的杂质浓度，并且在SOI层上形成栅电极。这些区域分别通过源极和漏极的横向扩散杂质形成，并且沿着源极和漏极的厚度在栅电极下方延伸。

9. 发明申请

US20120049055A1 DRUG DETECTION EQUIPMENT 有权
标题翻译：药物检测设备
公开(公告)号：US20120049055A1
公开(公告)日：2012-03-01
申请号：US13214654
申请日：2011-08-22
申请人： Makoto Hashimoto , Takefumi Yokokura , Masuyoshi Yamada , Hiroyuki Inoue , Hidetoshi Morokuma
发明人： Makoto Hashimoto , Takefumi Yokokura , Masuyoshi Yamada , Hiroyuki Inoue , Hidetoshi Morokuma
IPC分类号： H01J49/04 , H01J49/26
CPC分类号： H01J49/04
摘要： The mass spectrometer includes an ion source; a mass spectrometry part; a sample container; a heater for the sample container; a first gas tube connected to the sample container to introduce a gas into the sample container; and a second gas tube connected to the sample container to transfer a headspace gas of the sample container to the ion source, in which the ion source generates ions of the headspace gas and the mass spectrometry part performs mass spectrometry of the ions.Thereby, the mass spectrometer as a drug detection equipment can analyze various drugs in urine rapidly and with high sensitivity.
摘要翻译：质谱仪包括离子源; 质谱部分; 样品容器用于样品容器的加热器; 连接到样品容器以将气体引入样品容器中的第一气体管; 以及连接到样品容器以将样品容器的顶空气体转移到离子源的第二气体管，其中离子源产生顶空气体的离子，并且质谱部分进行离子的质谱分析。因此，作为药物检测装置的质谱仪可以快速，高灵敏度地分析尿液中的各种药物。

10. 发明授权

US07521711B2 Display device, method of production of the same, and projection type display device 有权
标题翻译：显示装置及其制造方法以及投影型显示装置
公开(公告)号：US07521711B2
公开(公告)日：2009-04-21
申请号：US11251430
申请日：2005-10-14
申请人： Shingo Makimura , Makoto Hashimoto , Yoshiro Okawa , Tomohiro Wada , Kazunori Kataoka
发明人： Shingo Makimura , Makoto Hashimoto , Yoshiro Okawa , Tomohiro Wada , Kazunori Kataoka
IPC分类号： H01L29/04
CPC分类号： H01L21/02675 , G02F1/13454 , G02F1/1368 , G02F2202/104 , H01L21/02532 , H01L21/0262 , H01L21/2022 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78609 , H01L29/78633 , H01L29/78675
摘要： A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors. This is because a higher speed operation is required for the peripheral transistors than the pixel transistors due to scanning of pixels and sampling of image signals.
摘要翻译：能够提高像素晶体管的耐光性而不依赖于遮光结构的显示装置及其制造方法，其中形成像素晶体管的有源层的多晶硅膜111的平均晶粒尺寸被控制为相对较小，以便抑制光漏电流。晶粒尺寸越小，晶体缺陷就越大。通过光照射而激发的载体被缺陷水平平滑地捕获，并且抑制了光泄漏电流的增加。另一方面，构成外围晶体管的多晶硅膜111的平均晶粒尺寸被控制成变得相对较大。晶粒尺寸越大，载流子的迁移率越大，外围晶体管的驱动性越高。这是因为由于像素的扫描和图像信号的采样，外围晶体管需要比像素晶体管更高的速度操作。

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