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2. 发明申请

US20040147136A1 Method for making the gate dielectric layer by oxygen radicals and hydroxyl radicals mixture 审中-公开
标题翻译：通过氧自由基和羟基自由基混合制备栅极电介质层的方法
公开(公告)号：US20040147136A1
公开(公告)日：2004-07-29
申请号：US10352920
申请日：2003-01-29
申请人： Macronix International Co., Ltd.
发明人： Cheng-Shun Chen , Yun-Chi Yang , Shu-Ya Hsu , Wei-Wen Chen , June-Min Yao
IPC分类号： H01L021/336 , H01L021/31 , H01L021/469
CPC分类号： H01L21/28185 , H01L21/0214 , H01L21/02164 , H01L21/022 , H01L21/02249 , H01L21/02255 , H01L21/02323 , H01L21/02337 , H01L21/28202 , H01L21/31662 , H01L29/518
摘要： This invention relates to a method for making the gate dielectric layer, more particularly, to the method for making the interface between the gate dielectric layer and silicon substrate by using oxygen radicals and hydroxyl radicals. In the method, we send the wafers, which has passed through the cleaning process for the silicon substrate, to the chamber at first and then transmit the first reaction gas, which comprises the nitric monoxide and the oxygen or comprises the nitric monoxide and nitrogen, to the chamber to form a silicon nitride layer or a silicon oxynitride layer on the first surface of the silicon substrate to be a gate. Next, we transmit the second reaction gas, which comprises the oxygen and the hydrogen, to the chamber and make the second reaction gas to be dissociated into the oxygen radicals and the hydroxyl radicals. The oxygen radicals enter to the contacting surface between the silicon substrate and the silicon oxynitride layer by diffusing ways and pass through the post anneal process to form an interface on the contacting surface between the gate dielectric layer and the silicon substrate to produce the smaller volume of the semiconductor devices.
摘要翻译：本发明涉及一种用于制造栅极电介质层的方法，更具体地说，涉及通过使用氧自由基和羟基自由基来形成栅介电层和硅衬底之间的界面的方法。在该方法中，首先将已经通过硅衬底的清洁处理的晶片发送到腔室，然后传输包含一氧化氮和氧气或包含一氧化氮和氮气的第一反应气体，以在硅衬底的第一表面上形成氮化硅层或氧氮化硅层作为栅极。接下来，将包含氧和氢的第二反应气体传输到室，并使第二反应气体解离成氧自由基和羟基。氧自由基通过扩散方式进入硅衬底和氮氧化硅层之间的接触表面，并通过后退火工艺以在栅介质层和硅衬底之间的接触表面上形成界面，以产生较小体积的半导体器件。

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