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1. 发明申请

US20040179565A1 Semiconductor laser device and laser module using same 有权
标题翻译：半导体激光器件和激光模块使用相同
公开(公告)号：US20040179565A1
公开(公告)日：2004-09-16
申请号：US10802753
申请日：2004-03-18
申请人： MITSUI CHEMICALS INC. , The Furukawa Electric Co., Ltd.
发明人： Atsushi Ohkubo , Satoru Okada , Tsuyoshi Fujimoto , Takeshi Koiso , Kiyofumi Muro , Michio Ohkubo , Yutaka Ohki
IPC分类号： H01S005/00
CPC分类号： B82Y20/00 , H01S5/02208 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/0652 , H01S5/0656 , H01S5/146 , H01S5/34
摘要： A semiconductor laser device emitting a laser beam having stable emitting wavelength and a multimode spectrum is provided. The semiconductor laser device is a Fabry-Perot type semiconductor laser device having a layer structure including an active layer of a quantum well structure, and emitting a laser beam having wavelength stabilized by an action of return light and having a multimode spectrum, wherein each well layer satisfies relation: null/dnull1.3null10null3 nmnull1 where null and d(nm) are an optical confinement factor and a thickness of a well layer, respectively.
摘要翻译：提供了发射具有稳定发射波长和多模光谱的激光束的半导体激光装置。半导体激光器件是具有包括量子阱结构的有源层的层结构的法布里 - 珀罗型半导体激光器件，并且发射具有通过返回光的作用而具有波长稳定并且具有多模光谱的波长的激光束，其中每个阱层满足关系：Gamma / d <= 1.3×10 -3 nm -1，其中Gamma和d（nm）分别是光限制因子和阱层的厚度。

2. 发明申请

US20030052315A1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US20030052315A1
公开(公告)日：2003-03-20
申请号：US10230988
申请日：2002-08-30
申请人： Mitsui Chemicals, Inc.
发明人： Tsuyoshi Fujimoto , Kiyofumi Muro , Takeshi Koiso
IPC分类号： H01L029/06
CPC分类号： H01S5/2231 , H01S5/2077 , H01S5/222
摘要： A real index guided semiconductor laser device includes an optical waveguide layer at least on one side of an active layer that has a band gap energy not less than that of the active layer; a cladding layer on an outer side of the optical waveguide layer that has a band gap energy not less than that of the optical waveguide layer; a refractive index control layer having a striped window, buried in the optical waveguide layer by selective growth; and a semiconductor layer formed in the optical waveguide layer by selective growth prior to the selective growth of the refractive index control layer. In a laminated portion including the semiconductor layer and the refractive index control layer, a change in effective refractive index due to a change in thickness of the semiconductor layer is smaller than that of the refractive index control layer.
摘要翻译：实际的折射率引导半导体激光器件包括：有源层的至少一侧的光波导层，其具有不小于有源层的带隙能量; 在光波导层的外侧具有不小于光波导层的带隙能量的包层; 折射率控制层，其具有通过选择性生长掩埋在所述光波导层中的条纹窗口; 以及通过在折射率控制层的选择性生长之前的选择性生长而形成在光波导层中的半导体层。在包括半导体层和折射率控制层的层叠部分中，由于半导体层的厚度变化引起的有效折射率的变化小于折射率控制层的变化。

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