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    • 2. 发明授权
    • Programmable impedance matching circuit and method
    • 可编程阻抗匹配电路及方法
    • US07145413B2
    • 2006-12-05
    • US10250177
    • 2003-06-10
    • Louis L. HsuJoseph NatonioDaniel W. StoraskaWilliam F. Washburn
    • Louis L. HsuJoseph NatonioDaniel W. StoraskaWilliam F. Washburn
    • H03H7/38
    • H03H7/38
    • As disclosed herein, a microelectronic circuit and method are provided for improving signal integrity at a transmission line. The circuit includes a programmably adjustable impedance matching circuit which is coupled to a transmission line which includes a programmably adjustable inductive element. The programmably adjustable impedance matching circuit is desirably provided on the same chip as a receiver or transmitter to which the transmission line is coupled, or alternatively, on an element packaged together with the chip that includes the receiver or transmitter. The impedance of the programmably adjustable impedance matching circuit is adjustable in response to control input to improve signal integrity at the transmission line.
    • 如本文所公开的,提供微电子电路和方法来改善传输线处的信号完整性。 该电路包括可编程调节的阻抗匹配电路,其耦合到包括可编程调节的电感元件的传输线。 可编程可调节阻抗匹配电路理想地设置在与传输线耦合的接收器或发射器相同的芯片上,或者替代地在与包括接收器或发射器的芯片一起封装的元件上。 可编程可调阻抗匹配电路的阻抗可以响应于控制输入而调节,以改善传输线处的信号完整性。
    • 3. 发明授权
    • Programmable peaking receiver and method
    • 可编程峰值接收机和方法
    • US06937054B2
    • 2005-08-30
    • US10250043
    • 2003-05-30
    • Louis L. HsuKarl D. SelanderMichael A. SornaWilliam F. WashburnHuihao H. XuSteven J. Zier
    • Louis L. HsuKarl D. SelanderMichael A. SornaWilliam F. WashburnHuihao H. XuSteven J. Zier
    • H04L25/02H03K19/003
    • H04L25/0272H04L25/0278H04L25/0294H04L25/03885
    • Methods and structures are disclosed herein for programmably adjusting a peaking function of a differential signal receiver. The disclosed method includes inputting a pair of differential signals to a pair of input transistors coupled to conduct currents differentially between a pair of load impedances and a pair of tail transistors. The impedance of an adjustable shunt impedance element between the tail transistors of the receiver is varied by programming signal input, such that higher current is conducted over a peaking range of frequencies. In a disclosed structural embodiment, an integrated circuit is provided having a programmable peaking receiver. The programmable peaking receiver includes a pair of input transistors coupled to conduct differentially according to a pair of differential inputs applied to the pair of input transistors. Each of the input transistors produces an output in accordance with the differential input applied thereto. The programmable peaking receiver also includes a pair of tail transistors, coupled to draw current from the input transistors, and a programmably adjustable impedance element coupled between current-conducting nodes of the tail transistors. The impedance of the programmably adjustable impedance element is thereby adjustable in response to programming signal input to adjust a peaking function of the programmable peaking receiver.
    • 本文公开了可编程地调节差分信号接收器的峰值功能的方法和结构。 所公开的方法包括将一对差分信号输入到耦合以在一对负载阻抗和一对尾部晶体管之间差分地传导电流的一对输入晶体管。 接收器的尾部晶体管之间的可调节分流阻抗元件的阻抗由编程信号输入变化,使得在峰值范围的频率上进行更高的电流。 在公开的结构实施例中,提供了具有可编程峰值接收器的集成电路。 可编程峰值接收器包括一对输入晶体管,其被耦合以根据施加到该对输入晶体管的一对差分输入进行差分导通。 每个输入晶体管根据施加到其上的差分输入产生输出。 可编程峰值接收器还包括耦合以从输入晶体管抽取电流的一对尾部晶体管,以及耦合在尾部晶体管的导电节点之间的可编程可调阻抗元件。 可编程可调阻抗元件的阻抗因此可响应于编程信号输入而调节,以调节可编程峰值接收器的峰值功能。
    • 4. 发明授权
    • Air channel interconnects for 3-D integration
    • 空气通道互连用于3-D集成
    • US08198174B2
    • 2012-06-12
    • US12536176
    • 2009-08-05
    • Louis L. HsuBrian L. JiFei LiuConal E. Murray
    • Louis L. HsuBrian L. JiFei LiuConal E. Murray
    • H01L21/44
    • H01L23/467H01L21/76898H01L23/481H01L25/0657H01L25/50H01L2225/06513H01L2225/06541H01L2225/06589H01L2924/0002H01L2924/00
    • A three-dimensional (3D) chip stack structure and method of fabricating the structure thereof are provided. The 3D chip stack structure includes a plurality of vertically stacked chips which are interconnected and bonded together, wherein each of the vertically stacked chips include one or more IC device strata. The 3D chip stack structure further includes an air channel interconnect network embedded within the chip stack structure, and wherein the air channel interconnect network is formed in between at least two wafers bonded to each other of the vertically stacked wafers and in between at least two bonded wafers of the vertically stacked wafers at a bonding interface thereof. In addition, the 3D chip stack structure further includes one or more openings in a peripheral region of the chip stack structure that lead into and out of the air channel interconnect network, so that air can flow into and out of the air channel interconnect network through the one or more openings to remove heat from the chip stack structure.
    • 提供三维(3D)芯片堆叠结构及其结构的制造方法。 3D芯片堆叠结构包括互连并结合在一起的多个垂直堆叠的芯片,其中每个垂直堆叠的芯片包括一个或多个IC器件层。 3D芯片堆叠结构还包括嵌入在芯片堆叠结构内的空气通道互连网络,并且其中空气通道互连网络形成在至少两个晶片之间,所述至少两个晶片彼此接合在垂直堆叠的晶片之间,并且在至少两个结合 在其接合界面处的垂直堆叠的晶片的晶片。 此外,3D芯片堆叠结构还包括在芯片堆叠结构的外围区域中的一个或多个开口,其引入和流出空气通道互连网络,使得空气可以流入和流出空气通道互连网络,通过 一个或多个开口以从芯片堆叠结构移除热量。
    • 7. 发明授权
    • Content addressable memory having reduced power consumption
    • 内容可寻址存储器具有降低的功耗
    • US07216284B2
    • 2007-05-08
    • US10145018
    • 2002-05-15
    • Louis L. HsuBrian L. JiLi-Kong Wang
    • Louis L. HsuBrian L. JiLi-Kong Wang
    • G11C29/00
    • G11C15/04G11C15/043
    • A content addressable memory (CAM). A data portion of the CAM array includes word data storage. Each word line includes CAM cells (dynamic or static) in the data portion and a common word match line. An error correction (e.g., parity) portion of the CAM array contains error correction cells for each word line. Error correction cells at each word line are connected to an error correction match line. A match on an error correction match line enables precharging a corresponding data match line. Only data on word lines with a corresponding match on an error correction match line are included in a data compare. Precharge power is required only for a fraction (inversely exponentially proportional to the bit length of error correction employed) of the full array.
    • 内容可寻址存储器(CAM)。 CAM阵列的数据部分包括字数据存储。 每个字线包括数据部分中的CAM单元(动态或静态)和公共字匹配线。 CAM阵列的纠错(例如,奇偶校验)部分包含每个字线的纠错单元。 每个字线处的误差校正单元连接到纠错匹配线。 纠错匹配线上的匹配可以对相应的数据匹配线进行预充电。 在数据比较中仅包括在纠错匹配行上具有对应匹配的字线上的数据。 预充电功率只需要一个分数(与所使用的误差校正的位长度成反比成正比)的整数组。
    • 8. 发明授权
    • Global planarization of wafer scale package with precision die thickness control
    • 具有精密模具厚度控制的晶圆级封装的全局平面化
    • US07005319B1
    • 2006-02-28
    • US10993941
    • 2004-11-19
    • Howard Hao ChenLouis L. HsuBrian L. Ji
    • Howard Hao ChenLouis L. HsuBrian L. Ji
    • H01L21/44H01L21/48H01L21/50
    • H01L25/50H01L21/6835H01L23/13H01L23/5389H01L24/24H01L24/29H01L24/82H01L24/83H01L25/0655H01L25/16H01L2221/6835H01L2224/24227H01L2224/83192H01L2224/8385H01L2924/01005H01L2924/01006H01L2924/01023H01L2924/01032H01L2924/01033H01L2924/01043H01L2924/07802H01L2924/14H01L2924/15153H01L2924/1517H01L2924/19041H01L2924/19042Y10S438/977
    • In accordance with the present invention, a method for producing at least two different chips with a controlled total chip thickness such that when these chips are placed into a corresponding pocket of a plurality of pockets located in a wafer chip carrier wherein each of the plurality of pockets have a total pocket depth (Tdp) at least substantially equal to one another, a substantially planarized top surface of said wafer chip carrier is achieved. The method comprises forming at least a first chip on a first dummy carrier and at least a second chip different from the first chip on a separate second dummy carrier using partial wafer bonding and partial wafer dicing. The method further includes using a chip thickness control mechanism in conjunction with said partial wafer bonding and partial wafer dicing in forming the at least a first chip and at least second chip different from the first chip, such that the at least first chip and the at least second different chip formed from each carrier each have a final total chip thickness (FTC) which is substantially equal to one another, and an FTC which is substantially equal to a total pocket depth (Tdp) of each of the uniform pockets of said wafer chip carrier, minus the final thickness of an attaching material (FTG) used within said each respective pocket.
    • 根据本发明,一种用于制造具有受控总芯片厚度的至少两个不同芯片的方法,使得当这些芯片被放置在位于晶片芯片载体中的多个凹穴的相应凹穴中时,其中多个 口袋具有至少基本上彼此相等的总口袋深度(Tdp),实现了所述晶片芯片载体的基本平坦化的顶表面。 该方法包括使用部分晶片接合和部分晶片切割,在第一虚设载体上形成至少第一芯片和至少第二芯片,该第一芯片与第一芯片不同于分开的第二虚设载体。 该方法还包括在形成至少第一芯片和与第一芯片不同的至少第二芯片的同时,使用芯片厚度控制机构与所述部分晶片结合和部分晶片切割相结合,使得至少第一芯片和在 从每个载体形成的最小的第二不同的芯片各自具有彼此基本相等的最终的总芯片厚度(FTC),以及基本上等于所述晶片的每个均匀袋的总袋深度(Tdp)的FTC 芯片载体减去在每个相应的口袋内使用的附着材料(FTG)的最终厚度。
    • 9. 发明授权
    • Method and system for optimizing transmission and reception power levels in a communication system
    • 用于优化通信系统中的发射和接收功率电平的方法和系统
    • US06980824B2
    • 2005-12-27
    • US10249546
    • 2003-04-17
    • Louis L. HsuBrian L. JiKarl D. SelanderMichael A. Sorna
    • Louis L. HsuBrian L. JiKarl D. SelanderMichael A. Sorna
    • H04B7/005H04B7/00
    • H04W52/20
    • A method and system are disclosed herein for determining optimum power level settings for a transmitter and receiver pair of a communication system having a plurality of transmitter and receiver pairs, as determined with respect to bit error rate. In the method disclosed herein, the power levels of a transmitter and a receiver pair coupled to communicate over a duplex communication link are set to initial values. The bit error rate is then determined over the link. Then, the power level of the transmitter, the receiver, or both, is altered, incrementally, and the effect upon the bit error rate is determined. When an improvement appears in the bit error rate at an altered power level, the power level of the transmitter, the receiver or both, are set to the altered power level at which the improvement is found. The steps of incrementally altering power levels, determining the bit error rate, and establishing new power level settings when there is an improvement are repeated until power levels are determined at which the bit error rate is optimized.
    • 本文公开了一种用于确定具有多个发射机和接收机对的通信系统的发射机和接收机对的最佳功率电平设置的方法和系统,如针对误码率确定的。 在本文公开的方法中,耦合到通过双工通信链路进行通信的发射机和接收机对的功率电平被设置为初始值。 然后通过链路确定误码率。 然后,发送器,接收器或两者的功率电平被改变,递增地,并且确定对误码率的影响。 当在改变的功率电平上出现比特错误率的改进时,发射机,接收机或两者的功率电平被设置为发现改进的改变的功率电平。 重复改变功率级别,确定误码率和建立新的功率电平设置的步骤,直到确定位误码率被优化的功率电平为止。