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    • 10. 发明申请
    • Integrated microelectromechanical wavelength selective switch and method of making same
    • 集成微机电波长选择开关及其制作方法
    • US20070081761A1
    • 2007-04-12
    • US11244778
    • 2005-10-06
    • Christopher DoerrDan Marom
    • Christopher DoerrDan Marom
    • G02B6/34G02B6/26G02B6/42C03B37/022
    • G02B6/12019G02B6/12014G02B6/12033G02B6/3518G02B6/356
    • A fully integrated microelectromechanical (MEMS) 1×K wavelength selective switch (WSS) includes an array of N solid-immersion micromirrors (SIMs) and a K+1 dispersion waveguide arrays that are integrally fabricated together. In one embodiment, the WSS is fabricated in Silicon. In another embodiment, the N actuators of the SIMs are etched in the Silicon layer of a Silicon-on Insulator (SOI) wafer. Thereafter, a Silica layer is deposited on the Silicon layer and the K+1 waveguide arrays and the mirrors for the N SIMs are etched in that Silica layer. In yet another embodiment, the K+1 dispersion waveguide arrays, except for a small portion of the common confocal coupler, are fabricated using a material selected from a group including Silica, sol-gel, polymers, that is deposited on a first wafer selected from a group including Silicon, Saphire, or other glass insulator material and the remaining portion of the common confocal coupler and the N SIMs are fabricated in a Silicon wafer, and the first wafer and Silicon wafer are then butt-coupled together.
    • 完全集成的微机电(MEMS)1xK波长选择开关(WSS)包括N个固体浸没微镜(SIM)阵列和一体制造在一起的K + 1分散波导阵列。 在一个实施例中,WSS在硅中制造。 在另一个实施例中,SIM的N个致动器在硅上绝缘体(SOI)晶片的硅层中被蚀刻。 此后,在硅层上沉积二氧化硅层,并且在该二氧化硅层中蚀刻K + 1波导阵列和N SIM反射镜。 在另一个实施例中,使用选自包括二氧化硅,溶胶 - 凝胶,聚合物在内的材料制造除常规共焦耦合器的一小部分之外的K + 1分散波导阵列,其沉积在所选择的第一晶片上 来自包括硅,Saphire或其它玻璃绝缘体材料的组,并且在硅晶片中制造公共共焦耦合器和N SIM的剩余部分,然后将第一晶片和硅晶片对接在一起。