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    • 7. 发明授权
    • Polariscope stress measurement tool and method of use
    • Polariscope应力测量工具及使用方法
    • US08537342B2
    • 2013-09-17
    • US13571481
    • 2012-08-10
    • Steven DanylukFang Li
    • Steven DanylukFang Li
    • G01B11/16G01J4/00
    • G01B11/168G01L1/241G01L5/0047
    • The present invention provides a tool for and method of using an infrared transmission technique to extract the full stress components of the in-plane residual stresses in thin, multi crystalline silicon wafers including in situ measurement of residual stress for large cast wafers. The shear difference method is used to obtain full stress components by integrating the shear stress map from the boundaries. System ambiguity at the boundaries is resolved completely by introducing a new analytical function. A new anisotropic stress optic law is provided, and stress optic coefficients are calibrated for different crystal grain orientations and stress orientations.
    • 本发明提供了一种使用红外透射技术提取薄多晶硅晶片中的平面内残余应力的全应力分量的工具和方法,包括原位测量大型晶圆的残余应力。 剪切差法用于通过从边界积分剪切应力图来获得全应力分量。 通过引入新的分析功能,完全解决了边界的系统模糊。 提供了新的各向异性应力光学定律,并且针对不同的晶粒取向和应力取向校准了应力光学系数。