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    • 1. 发明申请
    • MEMS TIME-OF-FLIGHT THERMAL MASS FLOW METER
    • MEMS时间飞行热量流量计
    • US20120216629A1
    • 2012-08-30
    • US13035639
    • 2011-02-25
    • Liji HuangChih-Chang ChenYahong YaoXiaozhong Wu
    • Liji HuangChih-Chang ChenYahong YaoXiaozhong Wu
    • G01F1/708
    • G01F1/7084G01F1/72
    • An apparatus comprising a micromachined (a.k.a. MEMS, Micro Electro Mechanical Systems) silicon flow sensor, a flow channel package, and a driving circuitry, which operates in a working principle of thermal time-of-flight (TOF) to measure gas or liquid flow speed, is disclosed in the present invention. The micromachining technique for fabricating this MEMS time-of-flight silicon thermal flow sensor can greatly reduce the sensor fabrication cost by batch production. This microfabrication process for silicon time-of-flight thermal flow sensors provides merits of small feature size, low power consumption, and high accuracy compared to conventional manufacturing methods. Thermal time-of-flight technology in principle can provide accurate flow speed measurements for gases regardless of its gas compositions. In addition, the present invention further discloses the package design and driving circuitry which is utilized by the correlated working principle.
    • 一种包括微加工(也称为MEMS,微机电系统)硅流量传感器,流动通道封装和驱动电路的装置,其以热时间飞行(TOF)的工作原理工作以测量气体或液体流量 速度,在本发明中公开。 用于制造这种MEMS飞行时间硅热流量传感器的微加工技术可以通过批量生产大大降低传感器制造成本。 与传统的制造方法相比,这种用于硅时间飞行热流传感器的微加工工艺具有小特征尺寸,低功耗和高精度的优点。 原理上,热时间飞行技术可以为气体提供准确的流速测量,无论其气体成分如何。 此外,本发明还公开了通过相关工作原理利用的封装设计和驱动电路。
    • 2. 发明授权
    • MEMS time-of-flight thermal mass flow meter
    • MEMS飞行时间热质量流量计
    • US08794082B2
    • 2014-08-05
    • US13035639
    • 2011-02-25
    • Liji HuangXiaozhong WuYahong YaoChih-Chang Chen
    • Liji HuangXiaozhong WuYahong YaoChih-Chang Chen
    • G01F1/708G01F1/68G01F1/72
    • G01F1/7084G01F1/72
    • An apparatus comprising a micromachined (a.k.a. MEMS, Micro Electro Mechanical Systems) silicon flow sensor, a flow channel package, and a driving circuitry, which operates in a working principle of thermal time-of-flight (TOF) to measure gas or liquid flow speed, is disclosed in the present invention. The micromachining technique for fabricating this MEMS time-of-flight silicon thermal flow sensor can greatly reduce the sensor fabrication cost by batch production. This microfabrication process for silicon time-of-flight thermal flow sensors provides merits of small feature size, low power consumption, and high accuracy compared to conventional manufacturing methods. Thermal time-of-flight technology in principle can provide accurate flow speed measurements for gases regardless of its gas compositions. In addition, the present invention further discloses the package design and driving circuitry which is utilized by the correlated working principle.
    • 一种包括微加工(也称为MEMS,微机电系统)硅流量传感器,流动通道封装和驱动电路的装置,其以热时间飞行(TOF)的工作原理工作以测量气体或液体流量 速度,在本发明中公开。 用于制造这种MEMS飞行时间硅热流量传感器的微加工技术可以通过批量生产大大降低传感器制造成本。 与传统的制造方法相比,这种用于硅时间飞行热流传感器的微加工工艺具有小特征尺寸,低功耗和高精度的优点。 原理上,热时间飞行技术可以为气体提供准确的流速测量,无论其气体成分如何。 此外,本发明还公开了通过相关工作原理利用的封装设计和驱动电路。
    • 4. 发明申请
    • Micromachined thermal mass flow sensors and insertion type flow meters and manufacture methods
    • 微加工热质量流量传感器和插入式流量计及其制造方法
    • US20070017285A1
    • 2007-01-25
    • US11157604
    • 2005-06-21
    • Gaofeng WangChih-Chang ChenYahong YaoLiji Huang
    • Gaofeng WangChih-Chang ChenYahong YaoLiji Huang
    • G01F1/68
    • G01F1/6845
    • An integrated mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or P-type silicon substrate with orientation . This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range. For each sensor, the thermally isolated membrane is formed by a process that includes a step of first depositing dielectric thin-film layers over the substrate and then performing a backside etching process on a bulk silicon with TMAH or KOH or carrying out a dry plasma etch until the bottom dielectric thin-film layer is exposed. Before backside etching the bulk silicon, rectangular openings are formed on the dielectric thin-film layers by applying a plasma etching to separate the area of heater and sensing elements from the rest of the membrane. This mass flow sensor is operated with two sets of circuits, a first circuit for measuring a flow rate in a first range of flow rates and a second circuit for measuring a flow rate in a second range of flow rates, to significantly increase range of flow rate measurements, while maintains a high degree of measurement accuracy.
    • 通过在取向<100>的N型或P型硅衬底上进行微加工工艺的方法制造集成的质量流量传感器。 该质量流量传感器包括中央薄膜加热器和一对薄膜热敏元件,以及用于支撑加热器的热隔离膜和与基板基板接触的传感器。 质量流量传感器布置成集成在相同的硅衬底上以形成一维或二维阵列,以便扩大动态测量范围。 对于每个传感器,热隔离膜通过包括首先在衬底上沉积电介质薄膜层然后用TMAH或KOH对体硅进行背面蚀刻工艺或进行干等离子体蚀刻的步骤来形成 直到底部介电薄膜层暴露。 在背面蚀刻体硅之前,通过施加等离子体蚀刻在电介质薄膜层上形成矩形开口,以将加热器的区域和感测元件与膜的其余部分分开。 该质量流量传感器用两组电路操作,第一电路用于测量第一流量范围内的流量,以及用于测量在第二流量范围内的流量的第二电路,以显着增加流量范围 速率测量,同时保持高度的测量精度。
    • 6. 发明授权
    • Integrated micromachined thermal mass flow sensor and methods of making the same
    • 集成微加工热质量流量传感器及其制造方法
    • US07908096B2
    • 2011-03-15
    • US11864804
    • 2007-09-28
    • Gaofeng WangChih-Chang ChenYahong YaoLiji Huang
    • Gaofeng WangChih-Chang ChenYahong YaoLiji Huang
    • G01F1/00
    • G01F1/6845G01F1/692G01F1/6965G01F1/698
    • An integrated mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or P-type silicon substrate with orientation . This mass flow sensor comprises an upstream thin-film heater, an downstream thin-film heater, and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heaters and the sensors out of contact with the substrate base. This mass flow sensor is operated with three sets of circuits, a first circuit for measuring a flow rate in a first range of flow rates, a second circuit for measuring a flow rate in a second range of flow rates, and a third circuit in a differential configuration for measuring a flow rate in said first range of flow rates or said second range of flow rates, to significantly increase range of flow rate measurements and provide an optional for concentration measurement, while maintains a high degree of measurement accuracy.
    • 通过在取向<100>的N型或P型硅衬底上进行微加工工艺的方法制造集成的质量流量传感器。 该质量流量传感器包括上游薄膜加热器,下游薄膜加热器和一对薄膜热敏元件,以及用于支撑加热器和传感器的热隔离膜与基底不接触。 该质量流量传感器用三组电路操作,第一电路用于测量第一流量范围内的流量,第二电路用于测量在第二流量范围内的流量,以及第三电路 用于测量所述第一流量范围或所述第二流量范围内的流量的差分配置,以显着增加流量测量的范围,并提供可选的浓度测量,同时保持高度的测量精度。
    • 7. 发明授权
    • Micromachined thermal mass flow sensor with self-cleaning capability and methods of making the same
    • 具有自清洁能力的微加工热质量流量传感器及其制造方法
    • US07878056B2
    • 2011-02-01
    • US11960261
    • 2007-12-19
    • Liji HuangChih-Chang ChenYahong YaoGaofeng Wang
    • Liji HuangChih-Chang ChenYahong YaoGaofeng Wang
    • G01F1/68
    • G01F1/6845G01F1/6888G01F15/006
    • The current invention generally relates to Micro Electro Mechanical Systems (MEMS) thermal mass flow sensors for measuring the flow rate of a flowing fluid (gas/liquid) and the methods of manufacturing on single crystal silicon wafers. The said mass flow sensors have self-cleaning capability that is achieved via the modulation of the cavity of which the sensing elements locate on the top of the cavity that is made of a silicon nitride film; alternatively the sensing elements are fabricated on top of a binary silicon nitride/conductive polycrystalline silicon film under which is a porous silicon layer selective formed in a silicon substrate. Using polycrystalline silicon or the sensing elements as electrodes, an acoustic wave can be generated across the porous silicon layer which is also used for the thermal isolation of the sensing elements. The vibration or acoustic energy is effective to remove foreign materials deposited on top surface of the sensing elements that ensure the accuracy and enhance repeatability of the thermal mass flow sensing.
    • 本发明通常涉及用于测量流动流体(气体/液体)的流量的微机电系统(MEMS)热质量流量传感器以及在单晶硅晶片上的制造方法。 所述质量流量传感器具有自清洁能力,其通过其感测元件位于由氮化硅膜制成的空腔顶部上的空腔的调制而实现; 或者,感测元件制造在二元氮化硅/导电多晶硅膜的顶部,在二元氮化硅/导电多晶硅膜的下方是选择性地形成在硅衬底中的多孔硅层。 使用多晶硅或感测元件作为电极,可以跨多孔硅层产生声波,其也用于感测元件的热隔离。 振动或声能有效地去除沉积在感测元件的顶表面上的异物,以确保精确度并增强热质量流量感测的重复性。
    • 8. 发明授权
    • Method of manufacturing a flow rate sensor
    • 制造流量传感器的方法
    • US07765679B2
    • 2010-08-03
    • US11523436
    • 2006-09-19
    • Yahong YaoChih-Chang ChenGafeng WangLiji Huang
    • Yahong YaoChih-Chang ChenGafeng WangLiji Huang
    • H05B3/00
    • G01F1/6845Y10T29/49082Y10T29/49083Y10T29/49117Y10T29/49124Y10T29/49155
    • A mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or lightly doped P-type silicon substrate with orientation . This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range. For each sensor, the thermally isolated membrane is formed by a process that includes a step of first depositing dielectric thin-film layers over the substrate and then performing a backside etching process on a bulk silicon with TMAH or KOH or carrying out a dry plasma etch until the bottom dielectric thin-film layer is exposed. Before backside etching the bulk silicon, rectangular openings are formed on the dielectric thin-film layers by applying a plasma etching to separate the area of heater and sensing elements from the rest of the membrane.
    • 通过在取向<100>的N或轻掺杂P型硅衬底上进行微加工工艺的方法制造质量流量传感器。 该质量流量传感器包括中央薄膜加热器和一对薄膜热敏元件,以及用于支撑加热器的热隔离膜和与基板基板接触的传感器。 质量流量传感器布置成集成在相同的硅衬底上以形成一维或二维阵列,以便扩大动态测量范围。 对于每个传感器,热隔离膜通过包括首先在衬底上沉积电介质薄膜层然后用TMAH或KOH对体硅进行背面蚀刻工艺或进行干等离子体蚀刻的步骤来形成 直到底部介电薄膜层暴露。 在背面蚀刻体硅之前,通过施加等离子体蚀刻在电介质薄膜层上形成矩形开口,以将加热器的区域和感测元件与膜的其余部分分开。
    • 9. 发明申请
    • INTEGRATED MICROMACHINED THERMAL MASS FLOW SENSOR AND METHODS OF MAKING THE SAME
    • 一体化微孔热流量传感器及其制造方法
    • US20090164163A1
    • 2009-06-25
    • US11864804
    • 2007-09-28
    • Gaofeng WangChih-Chang ChenYahong YaoLiji Huang
    • Gaofeng WangChih-Chang ChenYahong YaoLiji Huang
    • G01F25/00G01F1/69
    • G01F1/6845G01F1/692G01F1/6965G01F1/698
    • An integrated mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or P-type silicon substrate with orientation . This mass flow sensor comprises an upstream thin-film heater, an downstream thin-film heater, and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heaters and the sensors out of contact with the substrate base. This mass flow sensor is operated with three sets of circuits, a first circuit for measuring a flow rate in a first range of flow rates, a second circuit for measuring a flow rate in a second range of flow rates, and a third circuit in a differential configuration for measuring a flow rate in said first range of flow rates or said second range of flow rates, to significantly increase range of flow rate measurements and provide an optional for concentration measurement, while maintains a high degree of measurement accuracy.
    • 通过在取向<100>的N型或P型硅衬底上进行微加工工艺的方法制造集成的质量流量传感器。 该质量流量传感器包括上游薄膜加热器,下游薄膜加热器和一对薄膜热敏元件,以及用于支撑加热器和传感器的热隔离膜与基底不接触。 该质量流量传感器用三组电路操作,第一电路用于测量第一流量范围内的流量,第二电路用于测量在第二流量范围内的流量,以及第三电路 用于测量所述第一流量范围或所述第二流量范围内的流量的差分配置,以显着增加流量测量的范围,并提供可选的浓度测量,同时保持高度的测量精度。